STGP12NB60K N-CHANNEL 18A - 600V TO-220 SHORT CIRCUIT PROOF PowerMESH™ IGBT TYPE STGP12NB60K ■ ■ ■ ■ ■ ■ ■ VCES 600 V VCE(sat) IC(#) (Max) @25°C @ 100°C < 2.8 V 18 A HIGH INPUT IMPEDANCE LOW ON-LOSSES LOW GATE CHARGE HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT VERY HIGH FREQUENCY OPERATION TYPICAL SHORT CIRCUIT WITHSTAND TIME 10 MICROS DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency applications (up to 50kHz) and short circuit proof in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH FREQUENCY MOTOR CONTROLS ■ SMPS ■ UPS ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STGP12NB60K GP12NB60K TO-220 TUBE December 2003 1/9 STGP12NB60K ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Emitter-Collector Voltage 20 V VGE Gate-Emitter Voltage ± 20 V IC Collector Current (continuous) at TC = 25°C (#) 30 A IC Collector Current (continuous) at TC = 100°C (#) 18 A Collector Current (pulsed) 60 A µs ICM () Tsc PTOT Tstg Tj Short Circuit Withstand 10 Total Dissipation at TC = 25°C 125 W Derating Factor 1.0 W/°C –65 to 150 °C 150 °C Storage Temperature Max. Operating Junction Temperature () Pulse width limited by safe operating area THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.0 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Min. Typ. Max. VBR(CES) Collector-Emitter Breakdown Voltage IC = 250 µA, VGE = 0 ICES Collector cut-off (VGE = 0) VCE = Max Rating, TC = 25 °C VCE = Max Rating, TC = 125 °C 50 100 µA µA IGES Gate-Emitter Leakage Current (VCE = 0) VGE = ± 20V , VCE = 0 ±100 nA Typ. Max. Unit 7 V 2.2 1.7 2.8 V V Typ. Max. Unit 600 Unit V ON (1) Symbol Parameter Test Conditions VGE(th) Gate Threshold Voltage VCE = VGE, IC = 250 µA VCE(sat) Collector-Emitter Saturation Voltage VGE = 15V, IC = 12 A VGE = 15V, IC = 12 A, Tj =125°C Min. 5 DYNAMIC Symbol gfs Test Conditions Min. VCE = 25 V , IC = 12 A VCE = 25V, f = 1 MHz, VGE = 0 5 S 890 110 22 pF pF pF Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 480V, IC = 12 A, VGE = 15V 54 8 31 nC nC nC ICL Latching Current Vclamp = 480 V , VGE =15V, Tj = 125°C , RG = 10 Ω 48 A Short Circuit WITHSTAND Time VCE = 0.5 BVces , VGE = 15 V Tj = 125°C , RG = 10 Ω Twsc 2/9 Parameter Forward Transconductance 10 µs STGP12NB60K ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr (di/dt)on Eon Parameter Test Conditions Rise Time VCC = 480 V, IC = 12 A RG = 10Ω , VGE = 15 V Turn-on Current Slope Turn-on Switching Losses VCC= 480 V, IC = 12 A RG=10Ω VGE = 15 V,Tj = 125°C Turn-on Delay Time Min. Typ. Max. Unit 25 ns 14.5 ns 590 A/µs 180 µJ SWITCHING OFF Symbol tc Parameter Cross-over Time Test Conditions Vcc = 480 V, IC = 12 A, RGE = 10 Ω , VGE = 15 V Min. Typ. Max. Unit 130 ns 25 ns tr(Voff) Off Voltage Rise Time td(off) Delay Time 96 ns Fall Time 100 ns Turn-off Switching Loss 258 µJ Total Switching Loss 410 µJ 310 ns tf Eoff(**) Ets tc Cross-over Time Vcc = 480 V, IC = 12 A, RGE = 10 Ω , VGE = 15 V Tj = 125 °C tr(Voff) Off Voltage Rise Time 80 ns td(off) Delay Time 150 ns Fall Time 220 ns Turn-off Switching Loss 650 µJ Total Switching Loss 830 µJ tf Eoff(**) Ets Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) (#) Calculated according to the iterative formula: T JMAX – T C I C ( T C ) = -------------------------------------------------------------------------------------R THJ – C × VCESAT ( MAX )(T C, I C) 3/9 STGP12NB60K Output Characteristics Transfer Characteristics Transconductance Normalized Collector-Emitter On Voltage vs Temp. Collector-Emitter On Voltage vs Temperature Collector-Emitter On Voltage vs Collector Current 4/9 STGP12NB60K Gate Threshold vs Temperature Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Gate Resistance Total Switching Losses vs Temperature 5/9 STGP12NB60K Total Switching Losses vs Collector Current Thermal Impedance 6/9 Turn-Off SOA STGP12NB60K Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching 7/9 STGP12NB60K TO-220 MECHANICAL DATA DIM. 8/9 mm. MIN. TYP inch MAX. MIN. 4.60 0.173 TYP. MAX. A 4.40 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 L30 28.90 0.645 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STGP12NB60K Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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