STPS41L45CG/CT/CR ® LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF(AV) 2 x 20 A VRRM 45 V Tj (max) 150 °C VF (max) 0.47 V A1 K A2 FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED A2 ■ A1 ■ ■ K A1 I2PAK STPS41L45CR ■ A2 K TO-220AB STPS41L45CT ■ ■ K DESCRIPTION Dual center tab Schottky rectifier suited for 5V output in off line AC/DC power supplies. Packaged in D2PAK, I2PAK and TO-220AB this device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. A2 A1 D2PAK STPS41L45CG ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) Parameter Repetitive peak reverse voltage RMS forward current Average forward current Tc = 130°C δ = 0.5 40 IRRM Peak repetitive reverse current tp=2 µs square F=1kHz PARM Repetitive peak avalanche power tp = 1µs dV/dt * : A Per device tp = 10 ms sinusoidal Storage temperature range 30 20 Surge non repetitive forward current Tj Unit V Per diode IFSM Tstg Value 45 A 220 A 1 A 10000 W - 65 to + 175 °C 150 °C 10000 V/µs Tj = 25°C Maximum operating junction temperature * Critical rate of rise reverse voltage dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a ) July 2003 - Ed : 3A 1/6 STPS41L45CG / STPS41L45CT / STPS41L45CR THERMAL RESISTANCES Symbol Parameter Rth(j-c) Junction to case Rth(c) Coupling Value Unit 1.5 0.8 0.1 °C/W Per diode Total When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Tests Conditions IR * Reverse leakage current Min. Forward voltage drop Max. Unit 1.2 mA 220 mA 0.53 V VR = VRRM Tj = 25°C 110 Tj = 125°C VF * Typ. Tj = 25°C IF = 20 A Tj = 125°C IF = 20 A Tj = 25°C IF = 40 A Tj = 125°C IF = 40 A 0.42 0.47 0.68 0.60 0.66 Pulse test : * tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation : P = 0.28 x IF(AV) + 0.0095 IF2(RMS) Fig. 1: Conduction losses versus average current. Fig. 2: Average forward current versus ambient temperature (δ = 0.5). PF(av)(W) IF(av)(A) 14 δ = 0.1 12 25 δ = 0.5 δ = 0.2 δ = 0.05 Rth(j-a)=Rth(j-c) δ=1 20 10 15 8 6 10 4 Rth(j-a)=50°C/W T 5 T 2 IF(av)(A) δ=tp/T 0 0 2/6 2 4 6 8 10 12 14 16 18 20 22 24 tp δ=tp/T 0 26 28 0 Tamb(°C) tp 25 50 75 100 125 150 STPS41L45CG / STPS41L45CT / STPS41L45CR Fig. 3: Normalized avalanche power derating versus pulse duration. Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(1µs) 1 1.2 PARM(tp) PARM(25°C) 1 0.1 0.8 0.6 0.4 0.01 0.2 Tj(°C) tp(µs) 0.001 0.01 0.1 0 1 10 100 0 1000 Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values). 50 75 100 125 150 Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration. IM(A) Zth(j-c)/Rth(j-c) 220 1.0 200 0.9 180 0.8 160 0.7 δ = 0.5 140 0.6 Tc=25°C 120 0.5 100 Tc=75°C 80 60 40 25 Tc=125°C δ = 0.2 0.3 δ = 0.1 T 0.2 IM 20 0.4 t 0.1 t(s) δ=0.5 Single pulse tp(s) δ=tp/T 0.0 0 1.E-03 1.E-02 1.E-01 1.E+00 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values). 1.E-03 1.E-02 1.E-01 tp 1.E+00 Fig. 8: Junction capacitance versus reverse voltage applied (typical values). IR(mA) C(nF) 1.E+03 10.0 F=1MHz Vosc=30mV Tj=25°C Tj=150°C 1.E+02 Tj=125°C Tj=100°C 1.E+01 Tj=75°C 1.0 1.E+00 Tj=50°C 1.E-01 Tj=25°C VR(V) VR(V) 1.E-02 0.1 0 5 10 15 20 25 30 35 40 45 1 10 100 3/6 STPS41L45CG / STPS41L45CT / STPS41L45CR Fig. 9: Forward voltage drop versus forward current. Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (epoxy printed board FR4, Cu = 35µm) (STPS41L45CG only). IFM(A) Rth(j-a)(°C/W) 100 80 70 60 Tj=125°C (Maximum values) 50 Tj=125°C (Typical values) 10 40 Tj=25°C (Maximum values) 30 20 10 VFM(V) 1 S(cm²) 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 5 10 15 20 25 30 35 PACKAGE MECHANICAL DATA D2PAK DIMENSIONS REF. E C2 D L L3 A1 B2 R C B G A2 M * V2 * FLAT ZONE NO LESS THAN 2mm Max. Min. Max. A 4.40 4.60 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.037 B2 1.14 1.70 0.045 0.067 C 0.45 0.60 0.017 0.024 C2 1.23 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 E 10.00 10.40 0.393 0.409 G 4.88 5.28 0.192 0.208 L 15.00 15.85 0.590 0.624 L2 1.27 1.40 0.050 0.055 L3 1.40 1.75 0.055 0.069 M 2.40 3.20 0.094 0.126 R V2 FOOTPRINT (dimensions in mm) 16.90 10.30 5.08 1.30 3.70 8.90 4/6 Inches Min. A L2 Millimeters 0.40 typ. 0° 8° 0.016 typ. 0° 8° 40 STPS41L45CG / STPS41L45CT / STPS41L45CR PACKAGE MECHANICAL DATA I2PAK DIMENSIONS REF. Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 A1 2.49 2.69 0.098 0.106 b 0.70 0.93 0.028 0.037 b1 1.14 1.17 0.044 0.046 b2 1.14 1.17 0.044 0.046 c 0.45 0.60 0.018 0.024 c2 1.23 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 b2 e 2.40 2.70 0.094 0.106 b1 E 10.0 10.4 0.394 0.409 L 13.1 13.6 0.516 0.535 L1 3.48 3.78 0.137 0.149 L2 1.27 1.40 0.050 0.055 A E c2 L2 D L1 A1 L b e Millimeters c 5/6 STPS41L45CG / STPS41L45CT / STPS41L45CR PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS Dia C L5 L7 L6 L2 F2 D L9 L4 F M G1 E G Inches A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. Min. Max. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 1.14 1.70 4.95 5.15 2.40 2.70 10 10.40 16.4 typ. 13 14 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.044 0.066 0.194 0.202 0.094 0.106 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 Ordering type Marking Package Weight Base qty Delivery mode STPS41L45CG STPS41L45CG D2PAK 1.48 g 50 Tube 2 STPS41L45CG-TR STPS41L45CG D PAK 1.48 g 1000 Tape & reel STPS41L45CT STPS41L45CT TO-220AB 2.20 g 50 Tube 1.49 g 50 Tube STPS41L45CR ■ Millimeters A H2 F1 REF. STPS41L45CR 2 I PAK EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. 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