STT3423P -5.7 A, -20 V, RDS(ON) 42 m P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A E B F FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe TSOP-6 saves board space. Fast switching speed. High performance trench technology. C RDS(on) (m 42@VGS= -4.5V 57@VGS= -2.5V 80@VGS= -1.8V REF. A B C D E F -20 6 5 ID(A) -5.7 -4.9 -4.1 H J K DG PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) L Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. Drain 4 Gate 1 2 3 Source ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a Operating Junction and Storage Temperature Range VDS VGS ID @TA=25℃ ID @TA=70℃ IDM IS PD @TA=25℃ PD @TA=70℃ Tj, Tstg Ratings Maximum Unit -20 ±8 -5.7 -4.7 ±20 -1.7 2.0 1.3 -55 ~ 150 °C Symbol Maximum Unit RJA 50 90 °C / W V V A A A W THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambient a t ≦ 5 sec Steady State Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 23-Jul-2010 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 STT3423P -5.7 A, -20 V, RDS(ON) 42 m P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Gate-Threshold Voltage Typ. Max. Unit Test Conditions VGS(th) -0.4 - - V VDS=VGS, ID= -250uA Gate-Body Leakage IGSS - - ±100 nA VDS= 0V, VGS= ±8V Zero Gate Voltage Drain Current IDSS - - -1 - - -5 On-State Drain Current a ID(on) -20 - - - - 42 - - 57 - - 80 gfs - 10 - S VDS= -10V, ID= -4.9A VSD - -0.7 - V IS= 1.7A, VGS= 0V Drain-Source On-Resistance a Forward Transconductance Diode Forward Voltage a a RDS(ON) uA A VDS= -16V, VGS= 0V VDS= -16V, VGS=0 V, TJ= 55°C VDS = -4.5V, VGS= -4.5 V VGS= -4.5V, ID= -5.7A mΩ VGS= -2.5V, ID= -4.9A VGS= -1.8V, ID= -4.1A DYNAMIC b Total Gate Charge Qg - 8 - Gate-Source Charge Qgs - 1.8 - Gate-Drain Charge Qgd - 1.9 - Turn-on Delay Time Td(on) - 22 - Tr - 35 - Td(off) - 45 - Tf - 25 - Rise Time Turn-off Delay Time Fall Time nC VDS= -10V, VGS= -4.5V, ID= -5.7A nS VDD= -10V, VGEN= -4.5V, RL= 6, ID= -1A Notes a. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. b. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 23-Jul-2010 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 STT3423P Elektronische Bauelemente -5.7 A, -20 V, RDS(ON) 42 m P-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 23-Jul-2010 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 STT3423P Elektronische Bauelemente http://www.SeCoSGmbH.com/ 23-Jul-2010 Rev. A -5.7 A, -20 V, RDS(ON) 42 m P-Channel Enhancement Mode Mos.FET Any changes of specification will not be informed individually. Page 4 of 4