STW43NM60ND N-channel 600 V, 0.075 Ω, 35 A TO-247 FDmesh™ Power MOSFET (with fast diode) Features Type VDSS @ TJMAX RDS(on) max ID STW43NM60ND 650 V < 0.088 Ω 35 A ■ The worldwide best RDS(on)*area amongst the fast recovery diode devices ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Extremely high dv/dt and avalanche capabilities. 3 TO-247 Application ■ 2 1 Figure 1. Internal schematic diagram Switching applications $ Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. ' 3 !-V Table 1. Device summary Order code Marking Package Packaging STW43NM60ND 43NM60ND TO-247 Tube February 2010 Doc ID 14402 Rev 3 1/12 www.st.com 12 Contents STW43NM60ND Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 .............................................. 8 Doc ID 14402 Rev 3 STW43NM60ND 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 600 V VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 35 A ID Drain current (continuous) at TC = 100 °C 22 A Drain current (pulsed) 140 A Total dissipation at TC = 25 °C 255 W Peak diode recovery voltage slope 40 V/ns –55 to 150 °C 150 °C Value Unit 0.49 °C/W IDM (1) PTOT dv/dt (2) Tstg Tj Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area 2. ISD ≤ 35 A, di/dt ≤ 600 A/µs, VDD = 80% V(BR)DSS Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max 50 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Value Unit 14 A 1000 mJ Table 4. Symbol Avalanche characteristics Parameter IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) EAS Single pulse avalanche energy (starting TJ=25 °C, ID=IAS, VDD=50 V) Doc ID 14402 Rev 3 3/12 Electrical characteristics 2 STW43NM60ND Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage ID = 1 mA, VGS = 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, @125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 5 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 17.5 A V(BR)DSS Table 6. Symbol 600 3 V 4 0.075 0.088 Ω Dynamic Parameter Test conditions Min. Typ. Max. Unit gfs (1) Forward transconductance VDS=15 V, ID = 17.5 A - 17 - S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 - 4300 250 25 - pF pF pF Equivalent output capacitance VGS = 0, VDS = 0 to 480 V - 530 - pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 35 A, VGS = 10 V, (see Figure 15) - 145 18 80 - nC nC nC Rg Gate input resistance f=1 MHz Gate DC Bias=0 Test signal level = 20 mV open drain - 1.7 - Ω Coss eq. (2) 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS 4/12 Doc ID 14402 Rev 3 STW43NM60ND Electrical characteristics Table 7. Symbol td(on) tr td(off) tf Table 8. Symbol Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 300 V, ID = 17.5 A RG = 4.7 Ω VGS = 10 V (see Figure 14) Min. Typ. Max. Unit - 30 40 120 50 - ns ns ns ns Min Typ. Max Unit - 35 140 A A 1.3 V Source drain diode Parameter Test conditions ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 35 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 35 A, di/dt = 100 A/µs VDD = 100 V (see Figure 16) - 190 1.6 17 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 35 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 16) - 280 3.0 22 ns µC A trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Doc ID 14402 Rev 3 5/12 Electrical characteristics STW43NM60ND 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics AM01508v1 ID (A) 10µs n) S( o O p lim era ite tio d n by in m thi ax s a R re D a is 10 2 10 1 100µs 1ms 10 0 10ms 10-1 10-1 Figure 4. 10 0 10 2 10 1 VDS(V) Output characteristics !-V )$! 6'36 !-V )$ ! 6 6 Figure 6. 6$36 Transconductance Figure 7. AM01511v1 gfs (S) TJ=-50°C 6'36 Static drain-source on resistance AM01512v1 RDS(on) (Ω) 0.085 20.5 TJ=25°C 0.080 15.5 0.075 TJ=150°C 10.5 0.070 5.5 0.5 0 6/12 0.065 5 10 15 20 25 30 35 ID(A) 0.060 0 Doc ID 14402 Rev 3 10 20 30 ID(A) STW43NM60ND Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. !-V 6'3 6 Capacitance variations !-V # P& 6$$6 )$! #ISS #OSS #RSS 1GN# Figure 10. Normalized gate threshold voltage vs temperature AM01515v1 VGS(th) (norm) 1.1 6$36 Figure 11. Normalized on resistance vs temperature AM01516v1 RDS(on) (norm) 2.1 1.9 1.0 1.7 1.5 0.9 1.3 1.1 0.8 0.9 0.7 -50 0.5 -50 0.7 -25 0 25 50 75 100 125 TJ(°C) Figure 12. Source-drain diode forward characteristics -25 0 25 50 75 100 125 TJ(°C) Figure 13. Normalized BVDSS vs temperature AM01517v1 VSD (V) AM01518v1 BV(DSS) (V) 1.0 25°C 0.9 1.05 -50°C TJ=150°C 0.8 1.01 0.7 0.6 0.97 0.5 0.4 0 5 10 15 20 25 30 35 ISD(A) 0.93 -50 Doc ID 14402 Rev 3 -25 0 25 50 75 100 125 TJ(°C) 7/12 Test circuits 3 STW43NM60ND Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit Figure 18. Unclamped inductive waveform 8/12 Figure 19. Switching time waveform Doc ID 14402 Rev 3 STW43NM60ND 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Doc ID 14402 Rev 3 9/12 Package mechanical data STW43NM60ND TO-247 mechanical data Dim. mm. Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 øP 3.55 3.65 øR 4.50 5.50 S 10/12 Typ. 5.50 Doc ID 14402 Rev 3 STW43NM60ND 5 Revision history Revision history Table 9. Document revision history Date Revision Changes 06-Feb-2008 1 First release 22-Jan-2009 2 Document status promoted from preliminary data to datasheet. 16-Feb-2010 3 Figure 13: Normalized BVDSS vs temperature has been corrected Doc ID 14402 Rev 3 11/12 STW43NM60ND Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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