SAMWIN SW630 General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 200 V : 0.4 ohm : 9.0 A : 26 nc : 72 W This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and SMPS. It’s typical application is TV and monitor. D G S Absolute Maximum Ratings Symbol VDSS ID Parameter Value Drain to Source Voltage Units 200 V Continuous Drain Current (@Tc=25℃) 9 A Continuous Drain Current (@Tc=100℃) 6.8 A 36 A ±30 V IDM Drain Current Pulsed VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) 160 mJ EAR Repetitive Avalanche Energy (Note 1) 7.2 mJ Peak Diode Recovery dv/dt (Note 3) 5.0 V/ns 72 W 0.57 W/℃ -55~+150 ℃ 300 ℃ dv/dt (Note 1) Total Power Dissipation (@Tc=25℃) PD TSTG,TJ TL Derating Factor above 25℃ Operating junction temperature &Storage temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. Thermal Characteristics Value Symbol Parameter Units Min Typ Max RθJC Thermal Resistance, Junction-to-Case - - 1.73 ℃/ W RθCS Thermal Resistance, Case-to-Sink - 0.5 - ℃/ W RθJA Thermal Resistance, Junction-to-Ambient - - 62.5 ℃/ W 1/6 REV0.1 04.10.1 SAMWIN Electrical Characteristics SW630 (Tc=25℃ unless otherwise noted) Value Symbol Parameter Test Conditions Min Typ Max Unit s 200 - - V - 0.17 - V/℃ - - 1 uA Off Characteristics BVDSS Drain- Source Breakdown Voltage VGS=0V,ID=250uA △BVDSS/△Tj Breakdown Voltage Temperature coefficient ID=250uA,referenced to 25℃ VDS=200V, VGS=0V IDSS IGSS Drain-Source Leakage Current VDS=160V, Tc=125℃ Gate-Source Leakage Current VGS=30V,VDS=0V - - 100 nA Gate-Source Leakage Reverse VGS=-30V, VDS=0V - - -100 nA 2.0 - 4.0 V - - 0.4 ohm - - 770 - - 120 - - 35 - - 40 - - 140 - - 150 - - 140 - - 34 - 4 - - 10 - On Characteristics VGS(th) Gate Threshold Voltage VDS=VGS,ID=250uA RDS(ON) Static Drain-Source On-state Resistance VGS=10V,ID=4.5A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V,VDS=25V f=1MHz pF Dynamic Characteristics td(on) tr td(off) tf Turn-on Delay Time Rise Time VDD=100V,ID=9A RG=50ohm Turn-off Delay Time (Note4,5) Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge(Miller Charge) VDS=160V,VGS=10V, ID=9A (Note4,5) ns nc Source-Drain Diode Ratings and Characteristics Symbol Parameter Test Conditions IS Continuous Source Current ISM Pulsed Source Current Integral Reverse p-n Junction Diode in the MOSFET G VSD Diode Forward Voltage IS=9A,VGS=0V trr Reverse Recovery Time Qrr Reverse Recovery Charge IS=9A,VGS=0V, dIF/dt=100A/us Min. D Typ. Max. Unit. - - 9 - - 36 - - 1.5 V - 140 - ns - 0.77 - uc A s NOTES 1. Repeativity rating: pulse width limited by junction temperature 2. L=6.3mH,IAS=9A,VDD=50V,RG=0ohm, Starting TJ=25℃ 3. ISD≤9A,di/dt≤100A/us,VDD≤BVDSS, Starting TJ=25℃ 4. Pulse Test: Pulse Width≤300us,Duty Cycle≤2% 5. Essentially independent of operating temperature. REV0.1 S 2/6 04.10.1 SAMWIN SW630 VGS 1 10 top: 15V 10V 9V 8V 7V 6V 5.5V 5V bottom:4.5V 4.5V 0 10 -1 10 -1 0 10 1 10 10 VDS,Drain-to-Source voltage [V] Fig 1. On-State Characteristics Fig 2. Transfer Characteristics 0.50 0.45 10 1 10 0 0.40 VGS=20V VGS=10V 0.35 150 0.30 25 0.25 Note: 1.vGS=0v 2.250us test 0.20 0 2 4 6 8 10 12 14 10 16 -1 0.2 0.4 0.6 ID, Drain Current [A] 0.8 1.0 1.2 1.4 1.6 VSD,Source-Drain Voltage[V] Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage Fig 4. On State Current vs. Allowable Case Temperature 12 10 VDS=160V VDS=100V VDS=40V 8 6 4 2 Note:ID=9A 0 0 5 10 15 20 25 QG,Total Gate Charge [nC] Fig 6. Gate Charge Characteristics Fig 5. Capacitance Characteristics (Non-Repetitive) 3/6 REV0.1 04.10.1 SAMWIN SW630 3.0 1.2 2.5 1.1 2.0 1.5 1.0 1.0 0.9 Note: 1.VGS=0V 0.5 Note: 1.VGS=10V 2.ID=250uA 0.8 -100 2.ID=4.5A 0.0 -50 0 50 100 150 200 -50 0 o 50 100 150 o TJ,Junction Temperatur [ C] TJ,Junction Temperature[ C] Fig 7. Breakdown Voltage Variation vs. Junction Temperature Fig 8. On-Resistance Variation vs. Junction Temperature 2 10 10 Operation In This Area Limted By RDS(ON) 9 8 ID , Drain Current[A] 10us 1 10 100us 1ms 10ms 0 10 7 6 5 4 3 Note: 1.Tc=25 C 2.Tj=150 C 3.Single Pulse -1 10 2 1 0 1 10 2 10 0 25 3 10 10 50 Fig9. Maximum Safe Operating 0 100 125 150 o VD,Drain-Source Voltage[V] 1 0 75 Tc,Case Temperature [ C] Fig 10. Maximum Drain Current Vs. Case Temperature D = 0 .5 0 .2 0 .1 0 .0 5 1 0 0 .0 2 - 1 S IN G L E 0 .0 1 P U L S E N o te : 1 .Z (t)= 1 .7 3 J C o C /w M a x 2 .D u ty F a c to r ,D = t1 /t2 3 .T j-T c = P D M * Z (t) J C 1 0 - 5 1 0 t - 4 1 1 0 ,S q u a r e W - 3 a v e 1 0 P u ls e D - 2 u r a tio n 1 0 - 1 1 0 ( s e c ) Fig 11. Transient Thermal Response Curve 4/6 REV0.1 04.10.1 0 SAMWIN SW630 VGS Same Type as DUT 50KΩ Qg 10V 200nF 300nF Qgd Qgs VDS VGS DUT 1mA Charge Fig 12. Gate Charge test Circuit & Waveforms RL VDS VDD (0.5 rated VDS) 10V Pulse Generator RG DUT VDS Vin 90% 10% tf td(on) tr ton td(off) toff Fig 13. Switching test Circuit & Waveforms L 1 BVDSS EAS= --- LLIAS2--------------2 BVDSS-VDD VDS VDD BVDSS IAS RG VDD DUT ID(t) VDS(t) 10V tp Time Fig 14. Unclamped Inductive Switching test Circuit & Waveforms 5/6 REV0.1 04.10.1 SAMWIN SW630 + DUT VDS __ L Driver VDD RG Same Type as DUT VGS ● ● VGS (Driver) dv/dt controlled by RG Is controlled by pulse period Gate Pulse Width D = --------------------------Gate Pulse Period 10V IFM,Body Diode Forward Current di/dt IS (DUT) IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VDD Vf Body Diode Forward Voltage Drop Fig 15. Peak Diode Recovery dv/dt test Circuit & Waveforms 6/6 REV0.1 04.10.1