T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features • • • • • Functional Block Diagram Frequency: DC to 6 GHz Output Power (P3dB): 30 W at 6 GHz Linear Gain: >14 dB at 6 GHz Operating Voltage: 28 V Low thermal resistance package 1 2 General Description The TriQuint T1G6003028-FS is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with TriQuint’s proven 0.25 µm process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and RoHS compliant Evaluation Boards are available upon request. Data Sheet: Rev B 09/12/2012 © 2012 TriQuint Semiconductor, Inc. Pin Configuration Pin # Symbol 1 2 Flange Vd/RF OUT Vg/RF IN Source Ordering Information Material No. Part No. 1080206 T1G6003028-FS 1093989 T1G6003028-FSEVB1 - 1 of 13 - Description Packaged part: Flangeless 5.4-5.9 GHz Eval. Board ECCN EAR99 EAR99 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Specifications Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Drain to Gate Voltage, Vd – Vg Drain Voltage, Vd Gate Voltage, Vg Drain Current, Id Gate Current, Ig Power Dissipation, Pdiss RF Input Power, CW, T = 25ºC Channel Temperature, Tch Mounting Temperature (30 sec) Storage Temperature 40 V +40 V -8 to 0 V 5.5 A -10 to 10 mA 47.5 W 40 dBm o 275 C o 320 C o -40 to 150 C Vd Idq Id (Peak Current) Vg Channel Temperature, Tch Power Dissipation, Pdiss (CW) Power Dissipation, Pdiss (Pulse) Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Min Typical Max Units 28 200 2500 -3.6 V mA mA V o 205 C 30 W 40 W Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Recommended operating conditions apply unless otherwise specified: TA = 25 °C, Vd = 28 V, Idq = 200 mA, Vg = -3.6 V RF Characteristics Characteristics Symbol Min Typ Max Units Load Pull Performance at 3.0 GHz (VDS = 28 V, IDQ = 200 mA; Pulse: 100µs, 20%) Linear Gain GLIN 15.2 dB Output Power at 3 dB Gain Compression P3dB 33.5 W Drain Efficiency at 3 dB Gain Compression DE3dB 68.2 % Power-Added Efficiency at 3 dB Gain Compression PAE3dB 64.1 % Gain at 3 dB Compression G3dB 12.2 dB Load Pull Performance at 6.0 GHz (VDS = 28 V, IDQ = 200 mA; Pulse: 100µs, 20%) Linear Gain GLIN 14.5 dB Output Power at 3 dB Gain Compression P3dB 33.0 W Drain Efficiency at 3 dB Gain Compression DE3dB 50.0 % Power-Added Efficiency at 3 dB Gain Compression PAE3dB 46.5 % Gain at 3 dB Compression G3dB 11.5 dB Performance at 5.60 GHz in the 5.4 to 5.9 GHz Eval. Board (VDS = 28 V, IDQ = 200 mA; Pulse: 100µs, 20%) Linear Gain GLIN 12.0 14.0 dB Output Power at 3 dB Gain Compression P3dB 22.5 32.5 W Drain Efficiency at 3 dB Gain Compression DE3dB 45.0 50.0 % Gain at 3 dB Compression G3dB 9.0 11.0 dB Narrow Band Performance at 5.60 GHz (VDS = 28 V, IDQ = 200 mA, CW at P1dB) Impedance Mismatch Ruggedness VSWR 10:1 Note: VSWR testing performed with increasing real impedance value only from reference Z to 10 times reference Z. Data Sheet: Rev B 09/12/2012 © 2012 TriQuint Semiconductor, Inc. - 2 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Specifications (cont.) Thermal and Reliability Information Test Conditions DC at 85 °C TCH (°C) 205 ƟJC (°C/W) 4.0 Note: Thermal resistance, ƟJC, measured to bottom of package Data Sheet: Rev B 09/12/2012 © 2012 TriQuint Semiconductor, Inc. - 3 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Load Pull Smith Chart RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency. Test Conditions: VDS = 28 V, IDQ = 200 mA Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20% Load-Pull Data at 3 GHz Load-Pull Data at 4 GHz Load-Pull Data at 5 GHz Load-Pull Data at 6 GHz Data Sheet: Rev B 09/12/2012 © 2012 TriQuint Semiconductor, Inc. - 4 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Typical Performance (cont.) Performance is measured at DUT reference plane T1G6003028-FS Gain DEff. and PAE vs. Pout T1G6003028-FS Gain DEff. and PAE vs. Pout 2000MHz, 100µs 20%, VDS = 28V IDQ = 200mA 1000MHz, 100us 20%, Vds = 28V Idq = 200mA ZS = 3.92 + j1.97 Ω ZL = 7.67 + j5.39 Ω 22 ZS = 2.03 - j2.16 Ω 70 21 ZL = 6.30 + j2.80 Ω 60 60 23 50 22 40 21 30 Gain DEff. PAE 20 19 18 30 32 34 36 38 40 42 20 50 19 40 18 30 Gain DEff. PAE 17 10 16 0 46 44 20 15 30 32 34 36 40 10 42 0 46 44 Pout [dBm] T1G6003028-FS Gain DEff. and PAE vs. Pout T1G6003028-FS Gain DEff. and PAE vs. Pout 16 ZS = 6.37 - j13.01 Ω 70 15 ZL = 4.99 - j4.31 Ω 60 70 ZL = 5.78 - j2.51 Ω 60 15 50 14 40 13 30 11 10 30 32 34 36 38 40 42 20 44 14 50 13 40 12 30 Gain DEff. PAE 11 10 10 0 46 9 32 34 36 38 Pout [dBm] 70 17 ZS = 11.89 - j0.35 Ω 70 16 ZL = 6.31 - j12.07 Ω 60 60 50 13 40 12 30 Gain DEff. PAE 11 10 32 34 36 38 40 42 20 10 44 0 46 © 2012 TriQuint Semiconductor, Inc. 80 15 50 14 40 13 30 Gain DEff. PAE 12 11 10 30 Pout [dBm] Data Sheet: Rev B 09/12/2012 6000MHz, 100µs 20%, VDS = 28V IDQ = 200mA 18 14 9 30 0 48 46 32 34 36 38 40 42 20 DEff. & PAE [%] 15 ZL = 7.11 - j7.54 Ω 44 80 DEff. & PAE [%] ZS = 18.23 - j11.79 Ω 42 10 T1G6003028-FS Gain DEff. and PAE vs. Pout Gain [dB] 5000MHz, 100µs 20%, VDS = 28V IDQ = 200mA 16 40 20 Pout [dBm] T1G6003028-FS Gain DEff. and PAE vs. Pout 17 80 DEff. & PAE [%] ZS = 3.92 - j6.85 Ω 16 DEff. & PAE [%] 17 17 Gain DEff. PAE 4000MHz, 100µs 20%, VDS = 28V IDQ = 200mA 80 Gain [dB] 3000MHz, 100µs 20%, VDS = 28V IDQ = 200mA 12 Gain [dB] 38 20 Pout [dBm] 18 Gain [dB] 70 24 80 DEff. & PAE [%] 23 DEff. & PAE [%] Gain [dB] 25 80 Gain [dB] 26 10 44 0 46 Pout [dBm] - 5 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Performance over Temperature: Gain, Efficiency and Output Power Performance measured in TriQuint’s 5.4 GHz to 5.9 GHz Evaluation Board at 3 dB compression. T1G6003028-FS Gain vs. Temp. T1G6003028-FS Power vs. Temp. VDS = 28 V, IDQ = 200 mA; Pulse: 100 µs, 20% V DS = 28 V, IDQ = 200 mA; Pulse: 100 µs, 20% T1G6003028-FS Drain Eff. vs. Temp. T1G6003028-FS PAE vs. Temp. VDS = 28 V, IDQ = 200 mA; Pulse: 100 µs, 20% Data Sheet: Rev B 09/12/2012 © 2012 TriQuint Semiconductor, Inc. V DS = 28 V, IDQ = 200 mA; Pulse: 100 µs, 20% - 6 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Evaluation Board Performance: 5.4 to 5.9 GHz Output Power and Gain at 3 dB Compression VDS = 28 V, IDQ = 200 mA; Pulse: 100 µsec, 20% 20.00 50.00 Power (W) Gain (dB) 18.00 40.00 16.00 35.00 14.00 30.00 12.00 25.00 10.00 20.00 8.00 15.00 6.00 10.00 4.00 5.00 5.40 5.50 5.60 5.70 Frequency (GHz) 5.80 Gain (dB) Output Power (W) 45.00 2.00 5.90 Drain Efficiency and Power Added Efficiency at 3 dB Compression VDS = 28 V, IDQ = 200 mA; Pulse: 100 µsec, 20% 55 Drain Eff. (%) PAE (%) Efficiency (%) 50 45 40 35 5.40 Data Sheet: Rev B 09/12/2012 © 2012 TriQuint Semiconductor, Inc. 5.50 5.60 5.70 Frequency (GHz) - 7 of 13 - 5.80 5.90 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Application Circuit Bias-up Procedure Bias-down Procedure Vg set to -5.0V Turn off RF signal Turn off Vd and wait 1 second to allow drain capacitor dissipation Vd set to 28 V Adjust Vg more positive until quiescent Id is 200 mA. This will be ~ Vg = -3.6 V typical Apply RF signal Data Sheet: Rev B 09/12/2012 © 2012 TriQuint Semiconductor, Inc. Turn off Vg - 8 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications Information Evaluation Board Layout Top RF layer is 0.020” thick Rogers RO4350B, ɛr = 3.48. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Bill of Materials Reference Des. Value Qty Manufacturer Part Number C1 C2 L1, L2 C3, C4, C6, C7, C8 C5 R1 R2 R3 R4 C9, C10 C11, C12 C13, C14 C15 C16 L3 0.3 pF 0.2 pF 8.8 NH 3 pF 0.4 pF 97.6 Ohms 4.7 Ohms 330 Ohms 50 Ohms 220 pF 2200 pF 22000 pF 220 uF 1.0 uF 48 Ohm 1 1 2 5 1 1 1 1 1 2 2 2 1 1 1 ATC ATC COILCRAFT ATC ATC Venkel Newark Newark ATC AVX Vitramon Vitramon United Chemi-Con Allied Ferrite, Laird Tech. ATC600S0R3 ATC600S0R2 1606-8 ATC600S3R0 ATC600S0R5 CR0604-16w-97R6FT 37C0064 TNPW1206330RBT9ET1-E3 CRCW120651R0FKEA AVX06035C22KAT2A VJ1206Y222KXA VJ1206Y223KXA EMVY500ADA221MJA0G 541-1231 28F0121-0SR-10 Data Sheet: Rev B 09/12/2012 © 2012 TriQuint Semiconductor, Inc. - 9 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor PIN Description Pin Symbol Description 1 Vd/ RF OUT Drain voltage/ RF Output matched to 50 ohms; see Application Circuit on page 8 as an example. 2 Vg/RF IN 3 Flange Gate voltage/ RF Input matched to 50 ohms; see Application Circuit on page 8 as an example Source connected to ground; see Application Circuit on page 8 as an example. The T1G6003028-FS will be marked with the “3028” designator and a lot code marked below the part designator. The “YY” represents the last two digits of the year the part was manufactured, the “WW” is the work week, and the “ZZZ” is an auto-generated number. Data Sheet: Rev B 09/12/2012 © 2012 TriQuint Semiconductor, Inc. - 10 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Mechanical Information Package Information and Dimensions All dimensions are in millimeters. This package is lead-free/RoHS-compliant. The plating material on the leads is NiAu. It is compatible with both lead-free (maximum 260 °C reflow temperature) and tin-lead (maximum 245 °C reflow temperature) soldering processes. Data Sheet: Rev B 09/12/2012 © 2012 TriQuint Semiconductor, Inc. - 11 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Product Compliance Information ESD Information Solderability Compatible with the latest version of J-STD-020, J Lead free solder, 260° C ESD Rating: Value: Test: Standard: This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). Class 1A ≥ 250 V Human Body Model (HBM) JEDEC Standard JESD22 JESD22-A114 MSL Rating Level 3 at +260 °C convection reflow The part is rated ated Moisture Sensitivity Level 3 at 260°C per JEDEC standard IPC/JEDEC J-STD-020. 020. This product also has the following attributes: • Lead Free • Halogen Free (Chlorine, Bromine) • Antimony Free • TBBP-A (C15H12Br402) Free • PFOS Free • SVHC Free ECCN US Department of Commerce EAR99 Recommended Soldering Temperature Profile Data Sheet: Rev B 09/12/2012 © 2012 TriQuint Semiconductor, Inc. - 12 of 13 - Disclaimer: Subject to change without notice ® Connecting the Digital World to the Global Network T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: [email protected] Tel: Fax: +1.972.994.8465 +1.972.994.8504 For technical questions and application information: Email: [email protected] Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Data Sheet: Rev B 09/12/2012 © 2012 TriQuint Semiconductor, Inc. - 13 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ®