TDA8931 Power comparator 1 × 20 W Rev. 01 — 14 January 2004 Preliminary data sheet 1. General description The TDA8931 is a switching power stage for high efficiency class-D audio power amplifier systems. It contains a Single-Ended (SE) power stage, drive logic, protection control logic, a full differential input comparator and a HVP charger to charge the SE capacitor. With this amplifier a compact 1 × 20 W closed loop self-oscillating digital amplifier system can be built. The TDA8931 has a high efficiency so that a heat sink is not required up to 20 W (RMS). The system operates on an asymmetrical and a symmetrical supply voltage. 2. Features ■ ■ ■ ■ ■ ■ ■ High efficiency Operating voltage asymmetrical from 12 V to 35 V Operating voltage symmetrical from ±6 V to ±17.5 V Thermally protected No heat sink required Charger for single-ended capacitor No pop sound 3. Applications ■ ■ ■ ■ ■ Flat panel television sets Flat panel monitors Multimedia systems Wireless speakers Micro systems 4. Quick reference data Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit operating supply voltage asymmetrical 12 22 35 V symmetrical ±6 ±11 ±17.5 V Iq quiescent current Operating mode; VP = 22 V - 20 30 mA Istb standby current Standby mode; VP = 22 V - 10 15 mA Isleep sleep current Sleep mode; VP = 22 V - 100 200 µA General VP TDA8931 Philips Semiconductors Power comparator 1 × 20 W Table 1: Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit η Po = 15 W; Vp = 30 V; RL = 8 Ω 89 91 - % VP = 26 V 21 22 - W VP = 22 V 15 16 - W 15 16 - W efficiency SE channel Po maximum output power RL = 4 Ω; THD = 10 % RL = 8 Ω; THD = 10 % VP = 30 V 5. Ordering information Table 2: Ordering information Type number Package Name Description TDA8931T SO20 plastic small outline package; 20 leads; body width 7.5 mm SOT163-1 9397 750 13847 Preliminary data sheet Version © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 14 January 2004 2 of 31 TDA8931 Philips Semiconductors Power comparator 1 × 20 W 6. Block diagram 17 VDDA INP INN VSSA TDA8931 5 4 18 VDDP DRIVER HIGH comparator 16 CONTROL 3 DRIVER LOW 2 STABILIZER 12V POWERUP BOOT 6 15 14 OUT VSSP STABI VSSD VDDP ENABLE CGND 7 13 9 HVP ODP VSSP CONTROL OTP VDDP OCP OVP 19 12 OVP HVPI VSSP UVP 8 DIAG HEAT SPREADER 1 VSSD 10 VSSD 11 VSSD 20 VSSD 001aab807 Fig 1. Block diagram 9397 750 13847 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 14 January 2004 3 of 31 TDA8931 Philips Semiconductors Power comparator 1 × 20 W 7. Pinning information 7.1 Pinning VSSD 1 VSSA 2 INN 3 INP 4 20 VSSD 19 HVPI 18 VDDP 17 BOOT VDDA 5 POWERUP 6 ENABLE 7 15 VSSP 14 STABI DIAG 8 13 HVP CGND 9 12 OVP TDA8931 VSSD 10 16 OUT 11 VSSD 001aab811 Fig 2. Pin configuration 7.2 Pin description Table 3: Pin description Symbol Pin Description VSSD 1 negative digital supply voltage; heat spreader VSSA 2 negative analog supply voltage INN 3 inverting input INP 4 non inverting input VDDA 5 positive analog supply voltage POWERUP 6 power-up input ENABLE 7 enable input DIAG 8 diagnostic output CGND 9 control ground; reference ground for pins POWERUP, ENABLE and DIAG VSSD 10 negative digital supply voltage; heat spreader VSSD 11 negative digital supply voltage; heat spreader OVP 12 overvoltage protection reference input HVP 13 half supply voltage output for charging SE capacitor STABI 14 decoupling of internal stabilizer VSSP 15 negative power supply voltage OUT 16 PWM output BOOT 17 bootstrap capacitor connection VDDP 18 positive power supply voltage HVPI 19 half supply voltage output for reference voltage of input circuitry VSSD 20 negative digital supply voltage; heat spreader 9397 750 13847 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 14 January 2004 4 of 31 TDA8931 Philips Semiconductors Power comparator 1 × 20 W 8. Functional description 8.1 General The TDA8931 is a switching power stage for high efficiency class-D audio power amplifier systems. It contains a Single-Ended (SE) power stage, drive logic, protection control logic, a full differential input comparator and a HVP charger to charge the SE capacitor (see Figure 1). With this amplifier a compact 1 × 20 W closed loop self-oscillating digital amplifier system can be built. A second order low-pass filter converts the PWM output signal into an analog audio signal across the speaker. 8.2 Interfacing The operating modes of the TDA8931 can be controlled by pins POWERUP and ENABLE. Both pins refer to pin CGND. The device has three modes: • Sleep mode • Standby mode • Operating mode When pin POWERUP = LOW, the power comparator is in Sleep mode, independent of the signal on pin ENABLE. In Sleep mode the SE capacitor charger will be discharged. When pin POWERUP = HIGH and pin ENABLE = LOW the device is in Standby mode. In Standby mode the device is DC biased and the SE capacitor will be charged and the output is floating. When both pins POWERUP and ENABLE are HIGH, the device is in Operating mode. A level at pin POWERUP greater than 11 V can also enter the Operating mode, independent of the level on pin ENABLE (see Table 4). Remark: The switch-on sequence is important. First pin POWERUP = HIGH, then pin ENABLE = HIGH. Table 4: Interfacing Voltage on pin Mode POWERUP ENABLE < 0.8 V - Sleep 3 V to 7 V < 0.8 V Standby >3V Operating - Operating > 11 V 8.3 Input comparator The input comparator has a full differential input and is optimized for low noise and low offset. This results in maximum flexibility in the application. 8.4 Half supply voltage input reference (pin HVPI) When the device is in Standby mode, the external capacitor C6 (see Figure 5) will be charged until it reaches the half of the supply voltage. This pin charges capacitor C6 within 0.5 seconds. 9397 750 13847 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 14 January 2004 5 of 31 TDA8931 Philips Semiconductors Power comparator 1 × 20 W Pin HVPI will be on its final level of 0.5VP before the device starts switching. This results into a plop-noise free start-up behavior. 8.5 Half supply voltage capacitor charger (pin HVP) When the device is in Standby mode, the SE capacitor C15 (see Figure 5) will be charged until it reaches the half of the supply voltage. This current charges capacitor C15 within 0.5 seconds when a capacitor of 1000 µF is used. When the voltage on pin HVP has reached the level of 0.5VP it releases pin ENABLE for external use. When the device is in Operating mode, pin HVP is switched to floating to minimize dissipation. When the supply voltage drops, capacitor C15 is discharged and the device is switched off to avoid plop noise. 8.6 Protections Overtemperature, overcurrent, overvoltage and undervoltage sensors are included in the TDA8931. When one of these sensors exceeds its threshold level the output power stage is switched off and the output stage becomes floating. After 1.5 µs the device will try to restart. When the fault condition is removed the output stage is switched on. Table 5: Overview protections Protection Symbol Condition Output pin DIAG Remark OTP Tj > 150 °C LOW [1] self recovering when fault is removed OCP IO > IOCP OVP VP > VP(OVP)fix UVP VP < VP(UVP) ODP IO > IOCP and Tj > 140 °C LOW recovering by switching pin POWERUP: first to Sleep mode and then to Standby mode recovering by removing supply voltage [1] Pin DIAG = LOW for minimal 1.5 µs. 8.6.1 Overtemperature protection (OTP) If the junction temperature Tj exceeds the threshold level of approximately 150 °C then the device will shut down immediately. The device will start switching again when the temperature drops. 8.6.2 Overcurrent protection (OCP) If the output current exceeds the maximum output current threshold level (e.g. when the loudspeaker terminals are short-circuited it will be detected by the current protection) the device will shut-down. 8.6.3 Overvoltage protection (OVP) When the supply voltage applied to the TDA8931 exceeds the maximum supply voltage threshold level the device will shut down. The supply voltage on which the device stops operating is determined by two external resistors R1 and R2. 9397 750 13847 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 14 January 2004 6 of 31 TDA8931 Philips Semiconductors Power comparator 1 × 20 W VPA R1 OVP TDA8931 R2 001aac234 Fig 3. Overvoltage protection setting The overvoltage protection level can be determined by the formula: R1 + R2 V P ( OVP ) = -------------------- × V OVP R2 (1) Where: VP(OVP) = overvoltage protection level of supply voltage R1 = external resistor R2 = external resistor VOVP = 1.27 V reference voltage. Example: The TDA8931 has to shut down at 24 V. When we choose R2 = 10 kΩ, then R1 has to be 178 kΩ and VP(OVP) becomes 24 V. Remark: When pin OVP is connected to VSSD the VP(OVP)fix level is used. 8.6.4 Undervoltage protection (UVP) When the supply voltage applied to the TDA8931 drops below the minimum supply voltage threshold level the device is internally set to Standby mode. 8.6.5 Supply voltage drop protection When the TDA8931T is switched off with the supply, it will be switched off before it reaches the voltage on pin HVP. This prevents switch-off pop noise. This function is not self recovering. The TDA8931T can be recovered by switching to Sleep mode or by removing the supply voltage. 8.6.6 Overdissipation protection (ODP) In case of a short-circuit across the speaker the dissipation is minimized by the ODP. When the OCP and the OTP are on the same time activated, an over dissipation is defined. The device is set to Sleep mode and is not self-recovering. When pin POWERUP = 0 V or the supply voltage is removed, the device is recovered. 9397 750 13847 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 14 January 2004 7 of 31 TDA8931 Philips Semiconductors Power comparator 1 × 20 W 9. Internal circuitry Table 6: Internal circuitry Pin Symbol 1, 10, 11, 20 VSSD Equivalent circuit VDDA 1, 10 11, 20 VSSA 001aab815 2 VSSA VDDA 2 001aab817 3, 4 INN, INP VDDA 1 kΩ 3 ±20 % 1 kΩ 4 001aab816 ±20 % VSSA 5 VDDA 5 VSSA VSSD 001aab818 6 POWERUP VDDA 6 155 kΩ ±20 % CGND 001aab819 9397 750 13847 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 14 January 2004 8 of 31 TDA8931 Philips Semiconductors Power comparator 1 × 20 W Table 6: Internal circuitry …continued Pin Symbol 7 ENABLE Equivalent circuit 7 155 kΩ ±20 % CGND 001aab820 8 DIAG 8 001aab821 9 CGND CGND VDDA 9 VSSD 001aab822 12 OVP 12 200 kΩ VSSD 13 Vref 001aab823 HVP VDDP 13 VSSP 14 001aab824 STABI BOOT 17 10 Ω 14 50 kΩ VSSP VSSA VSSD 001aab825 9397 750 13847 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 14 January 2004 9 of 31 TDA8931 Philips Semiconductors Power comparator 1 × 20 W Table 6: Internal circuitry …continued Pin Symbol 15 VSSP 16 OUT 18 VDDP Equivalent circuit VDDP 18 16 15 VSSP 17 001aab826 BOOT STABI 14 10 Ω 17 16 OUT 001aab827 19 HVPI VDDP 90 kΩ 19 3 kΩ 90 kΩ VSSP 9397 750 13847 Preliminary data sheet 001aab828 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 14 January 2004 10 of 31 TDA8931 Philips Semiconductors Power comparator 1 × 20 W 10. Limiting values Table 7: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VP operating supply voltage asymmetrical 12 40 V ±6 ±20 V VENABLE maximum voltage on pin ENABLE - 14 V VOVP maximum voltage on pin OVP - 14 V Vn voltage on all other pins VSS − 0.3 VDD + 0.3 V IORM repetitive peak output current - 8 A Pd(max) maximum power dissipation - 2.5 W Tj junction temperature - 150 °C Tstg storage temperature −55 +150 °C Tamb ambient temperature −40 +85 °C symmetrical 11. Thermal characteristics Table 8: Thermal characteristics Symbol Parameter Rth(j-a) Rth(j-p) Rth(j-c) Conditions Typ Unit thermal resistance junction to ambient in free air [1] 24 K/W thermal resistance junction to pin in free air [2] 16 K/W in free air [3] 3 K/W thermal resistance junction to case [1] Measured in the application board. [2] Vp = 22 V; RL = 4 Ω; Vripple = 2 V (p-p); fripple = 100 Hz with feed-forward network (470 kΩ and 15 nF). [3] Strongly depending on where you measure on the case. 12. Static characteristics Table 9: Characteristics VP = 22 V; Tamb = 25 °C; fcarrier = 290 kHz; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit asymmetrical 12 22 35 V symmetrical ±6 ±11 ±17.5 V Supply voltage VP operating supply voltage VP = VDDP − VSSP Iq quiescent current with load; filter and snubbers connected - 20 30 mA Istb standby current Standby mode; SE capacitor charged - 10 15 mA Isleep sleep current Sleep mode - 100 200 µA 9397 750 13847 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 14 January 2004 11 of 31 TDA8931 Philips Semiconductors Power comparator 1 × 20 W Table 9: Characteristics …continued VP = 22 V; Tamb = 25 °C; fcarrier = 290 kHz; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit - - 0.8 V Standby mode 3 - 7 V Operating mode 11 - VP V - 0.5 - V - 30 40 µA - - 0.8 V 3 - 12 V Power-up input: pin POWERUP VIL LOW-level input voltage with respect to CGND VIH HIGH-level input voltage with respect to CGND Vhys hysteresis voltage II input current VI = 5 V Enable input: pin ENABLE LOW-level input voltage VIL VIH HIGH-level input voltage Vhys hysteresis voltage II input current with respect to CGND with respect to CGND [1] - 0.3 - V VI = 5 V - 30 40 µA with respect to VSSD 11 12 14 V - - 10 mV - - 15 mV Internal stabilizer output: pin STABI output voltage VO Comparator full differential input stage: pins INP and INN Voff(i)(eq) equivalent input offset voltage Vn(i)(eq) equivalent input RMS-noise voltage Vi(cm) common mode input voltage VSSA + 4 - VDDA − 5 V Ii(bias) bias input current - 24 60 nA 0.5VP − 0.25 0.5VP 0.5VP + 0.25 V 0.5VP − 0.25 0.5VP 0.5VP + 0.25 V 20 45 - mA 150 155 - °C 35 37.5 40 V 1.19 1.27 1.35 V 10 11 12 V 3.3 4.0 - A 20 Hz < fi < 20 kHz Half supply voltage output for input circuitry: pin HVPI VHVPI output voltage on pin HVPI Standby and Operating mode Half supply voltage output to charge SE capacitor: pin HVP VHVP output voltage on pin HVP Icharge charge current of HVP capacitor Standby mode Overtemperature protection (OTP) TOTP overtemperature protection level Overvoltage protection (OVP) VP(OVP)fix VOVP fixed OVP threshold level level internal fixed [2] adjustable OVP level Undervoltage protection (UVP) VP(min) protection level minimum supply voltage Overcurrent protection (OCP) IOCP overcurrent protection level [1] VIH on pin ENABLE must not exceed VDDA. [2] The overvoltage protection can be controlled external (see Section 8.6.3). 9397 750 13847 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 14 January 2004 12 of 31 TDA8931 Philips Semiconductors Power comparator 1 × 20 W 13. Dynamic characteristics Table 10: Characteristics VP = 22 V; Tamb = 25 °C; RL = 4 Ω; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VP = 26 V 21 22 - W VP = 22 V 15 16 - W Amplifier; SE channel Po(max) maximum output power RL = 4 Ω; THD = 10 % [1] RL = 8 Ω; THD =10 % VP = 30 V THD total harmonic distortion Vn(o) noise output voltage Gv(range) gain adjust range η efficiency 15 16 - W Po = 1 W, fi = 1 kHz [1] - 0.02 0.1 % Operating mode; inputs shorted; gain = 20 dB, AES17 brick wall filter [1] - 128 150 µV [1] 14 20 26 dB Vp = 22 V; RL = 4 Ω [1] 87 89 - % Vp = 30 V; RL = 8 Ω [1] 89 91 - % Po = 15 W PWM output: pin OUT (see Figure 4) tr output voltage rise time - 20 - ns tf output voltage fall time - 20 - ns tdead dead time - 0 - ns tr(LH) response time of transition from LOW-to-HIGH Vi(dif) = 70 mV - 120 - ns Vi(dif) = 3.3 V - 100 - ns tr(HL) response time of transition from HIGH-to-LOW Vi(dif) = 70 mV - 120 - ns Vi(dif) = 3.3 V - 100 - ns tW(min) minimum pulse width - 150 - ns RDSon drain-source on-state resistance of output transistor - 0.22 0.3 Ω [1] Measured in the application board. 9397 750 13847 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 14 January 2004 13 of 31 TDA8931 Philips Semiconductors Power comparator 1 × 20 W input Vi(dif) 3.3 V Vi(cm) tr(LH) tr(HL) tW(min) VDD output Vo 0V VSS tr tf time 001aac235 Vi(cm) = (VSSA + 4 V) to (VDDA − 5 V). tdead cannot be represented in the figure. Response time depends on input signal amplitude. The second input pulse is not reproduced with same pulse width by the output due to minimum pulse width limitation. Fig 4. Timing diagram PWM output 9397 750 13847 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 14 January 2004 14 of 31 xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x 6.8 kΩ VP VP R1 R3 3.9 kΩ C2 100 nF R4 1 kΩ VPA VP R11(1) C17 470 kΩ 15 nF C5 C4 2.2 nF C7 R5 INN VP VDDP 2.2 nF 18 5 17 3 C8 220 pF BOOT C9 2.2 µF 47 kΩ R6 4 2.2 kΩ POWERUP 6 R13 15 kΩ EN 47 kΩ DIAG S1(2) OVP CGND R8 2.2 kΩ 13 8 19 14 VSSP VSSA 2 15 R7 10 Ω + OUT − 22 µH C13 100 nF HVP HVPI 12 9 C10 220 pF L1 OUT TDA8931 7 STABI R10 22 Ω C14 680 nF C15(3) 1000 µF (35 V) 1 10 11 20 VSSD R12 16 U1 47 kΩ VSSD VPA R9 C12 15 nF VSSD 220 nF INP VSSD Rev. 01 — 14 January 2004 + IN − C11 C1 470 µF (35 V) GND 100 nF VDDA C6 47 µF (25 V) VPA 10 Ω Philips Semiconductors R2 2.2 nF 14. Application information 9397 750 13847 Preliminary data sheet C3 C16 220 nF 001aab812 (3) The low frequency gain is determined by the capacitor in series with the speaker. The cut-off frequency with a 4 Ω speaker and C15 = 1000 µF is 40 Hz. Fig 5. Typical application diagram with TDA8931 supplied from an asymmetrical supply TDA8931 (2) Standby mode: S1 = closed; Operating mode: S1 = open. Power comparator 1 × 20 W 15 of 31 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. (1) Optional feed forward network to improve SVRR. TDA8931 Philips Semiconductors Power comparator 1 × 20 W Table 11: Bill of material Item Part Description C1 470 µF/35 V general purpose C2 100 nF SMD 0805 C3 2.2 nF SMD 0805 C4 2.2 nF SMD 0805 C5 100 nF SMD 0805 C6 47 µF/25 V general purpose C7 2.2 nF SMD 0805 C8 220 pF SMD 0805 C9 2.2 µF/16 V general purpose C10 220 pF SMD 0805 C11 220 nF SMD 1206 C12 15 nF SMD 0805 C13 100 nF SMD 0805 C14 680 nF MKT C15 1000 µF/35 V general purpose C16 220 nF SMD 1206 C17 15 nF SMD 0805 R1 10 Ω SMD 1206 R2 6.8 kΩ SMD 0805 R3 3.9 kΩ SMD 0805 R4 1 kΩ SMD 0805 R5 47 kΩ SMD 0805 R6 2.2 kΩ SMD 0805 R7 10 Ω SMD 1206 R8 2.2 kΩ SMD 0805 R9 47 kΩ SMD 0805 R10 22 Ω SMD 2512 R11 470 kΩ SMD 0805 R12 47 kΩ SMD 0805 R13 15 kΩ SMD 0805 L1 22 µH TOKO 11RHBP A7503CY-220M U1 TDA8931 SO20 9397 750 13847 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 14 January 2004 16 of 31 TDA8931 Philips Semiconductors Power comparator 1 × 20 W 14.1 Output power estimation The output power, just before clipping, can be estimated using the following equation: P o ( 1% ) 2 RL ---------------------------------------------------------------× V P R L + R DSon + R coil + R ESR = ------------------------------------------------------------------------------------8 × RL (2) Where: Po(1%) = output power just before clipping at THD = 1 % RL = load impedance RDSon = on-resistance power switch Rcoil = series resistance output coil RESR = ESR of the single-ended capacitor VP = supply voltage (VDDP − VSSP) Example: Substituting RL = 4 Ω, RDSon = 0.22 Ω (at Tj = 25 °C), Rcoil = 0.045 Ω, RESR = 0.06 Ω and VP = 22 V results in output power Po = 12.9 W. The output power at THD = 10 % can be estimated by: P o ( 10% ) = 1.25 × P o ( 1% ) (3) Figure 6 shows the estimated output power as a function of the supply voltage for different load impedances. 001aac236 30 PO (W) 001aac237 30 PO (W) 6Ω 4Ω 20 8Ω 20 4Ω 6Ω RL = 3 Ω 8Ω RL = 3 Ω 10 Ω 10 Ω 10 10 0 0 10 15 20 25 30 35 10 15 VP (V) a. THD = 1 %. 20 25 30 35 VP (V) b. THD = 10 %. Fig 6. Output power as a function of supply voltage 9397 750 13847 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 14 January 2004 17 of 31 TDA8931 Philips Semiconductors Power comparator 1 × 20 W 14.2 Output current limiting The output current is limited by the OCP with a threshold level of 3.3 A (minimum). During normal operation the output current should not exceed this threshold level, otherwise the output signal is distorted. The peak output current should stay below 3.3 A and can be estimated using the following equation: VP I O ≤ ------------------------------------------------------------------------------- ≤ 3.3 2 × ( R DSon + R L + R coil + R ESR ) (4) Where: IO = output current in the load in VP = supply voltage (VDDP − VSSP) RDSon = on-resistance power switch RL = load impedance Rcoil = series resistance output coil RESR = ESR of the single-ended capacitor Example: With a 4 Ω load the OCP will be triggered below a supply voltage of 28 V. This will result in an absolute maximum output power of Po = 26 W at THD = 10 %. 14.3 Low pass filter considerations For a flat frequency response (second order Butterworth filter) it is necessary to change the LC-filter components (L1 and C14) according to the speaker impedance. Table 12 shows the required components values in case of a 4 W, 6 W or 8 W speaker impedance. Table 12: Filter components values Speaker impedance (Ω) L1 value (µH) C14 value (nF) 4 22 680 6 33 470 8 47 330 14.4 Thermal behavior (printed-circuit board considerations) The SO20 package of the TDA8931T has special thermal corner leads, significantly increasing the power capability (reducing Rth). The corner leads (pins 1, 10, 11 and 20) should be attached to a copper area (VSS) on the PCB for cooling. The typical thermal resistance Rth(j-a) of the TDA8931T is 24 K/W (free air and natural convection) when soldered on a double sided FR4 PCB with 35 µm copper layer and cooling area of approximately of 28 cm2. 9397 750 13847 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 14 January 2004 18 of 31 TDA8931 Philips Semiconductors Power comparator 1 × 20 W 14.4.1 Thermal layout including vias The bottom side of the double-sided PCB is used to place the SMD components including the TDA8931T and the majority of the signal tracks. The topside is used to place the leaded components. The remaining area on both top and bottom layer are filled with ground plane for a proper cooling. In this way it is possible to have a cooling area available of about: • 40 % of the PCB area on the bottom (60 % for signal tracks and SMD components) • 90 % of the PCB area on the top (10 % for signal tracks) The PCB area required for a typical mono amplifier is 21.5 cm2 resulting in a cooling area of about 28 cm2. Thermal vias should be placed close to corner leads for a proper heat flow to the top layer of the PCB. Figure 7 is showing the thermal vias indicated as black dots and Figure 8 is showing the heat flow to the copper area on the top layer. 20 1 top layer bottom layer TDA8931T 001aac239 10 11 001aac238 Fig 7. Thermal vias (top view) Fig 8. Heat flow (cross section view) 14.4.2 Thermal considerations To estimate the maximum junction temperature, the following equation can be used: T j ( max ) = T amb + R th ( j – a ) × P d (5) Where: Tamb = ambient temperature Pd = power dissipation in the TDA8931T Rth(j-a) = thermal resistance from junction to ambient (24 K/W) 9397 750 13847 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 14 January 2004 19 of 31 TDA8931 Philips Semiconductors Power comparator 1 × 20 W To estimate the power dissipation, the following equation can be used: 1 P d = P o × --- – 1 η (6) Where: Pd = power dissipation Po = RMS output power (W) η = efficiency of total application (0.91 for RL = 8 Ω and 0.89 for RL = 4 Ω) The derating curves of the dissipated power as a function of ambient temperature for several values of Rth(j-a) are illustrated in Figure 9. A maximum junction temperature Tj = 150 °C is taken into account. 001aac303 8 Pd (W) R th(j-a) (K/W) 6 20 25 30 35 40 4 2 0 25 50 75 100 Tamb (°C) Fig 9. Derating curves for power dissipation as a function of maximum ambient temperature Example: TDA8931T mono amplifier, with substituting Po = 1 × 20 W, Rth(j-a) = 24 K/W, Pd = 2.47 W results in a junction temperature Tj(max) = 119 °C. For this example the estimated maximum junction temperature at a high ambient temperature of 60 °C for a mono amplifier driving 4 Ω speaker impedance stays below the OTP threshold level of 150 °C. 9397 750 13847 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 14 January 2004 20 of 31 TDA8931 Philips Semiconductors Power comparator 1 × 20 W 14.5 Measured performance figures of mono amplifier with TDA8931 Table 13: Characteristics VP = 22 V; RL = 4 Ω, fi = 1 kHz; inverted input signal; Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions VP operating supply voltage Po output power Min Typ Max Unit 12 22 35 V THD+N = 10 % - 22 - W THD+N = 1 % - 20 - W THD+N = 10 % - 16.0 - W THD+N = 1 % - 12.0 - W THD+N = 10 % - 16.0 - W THD+N = 1 % - 12.0 - W [1] VP = 26 V; RL = 4 Ω VP = 22 V; RL = 4 Ω VP = 30 V; RL = 8 Ω THD+N η total harmonic distortion-plus-noise Po = 1 W; AES17 brick wall filter Vp = 22 V; RL = 4 Ω - 0.02 - % Vp = 30 V; RL = 8 Ω - 0.02 - % Vp = 22 V; RL = 4 Ω - 89 - % Vp = 30 V; RL = 8 Ω Po = 15 W efficiency - 91 - % Gv closed loop gain Vi = 100 mV (RMS); fi = 1 kHz - 20 - dB Vn(o) noise output voltage inputs shorted; AES17 brick wall filter - 128 - µV S/N signal-to-noise ratio unwanted; with respect to Vo = 10 V (RMS) - 98 - dB B band width −3 dB low; LF cut-off point depends on value of SE capacitances - 40 - Hz −3 dB high - 45000 - Hz SVRR supply voltage ripple Vp = 22 V; RL = 4 Ω; Vripple = 2 V (p-p); rejection fripple = 100 Hz with feed forward network (470 kΩ and 15 nF) 45 48 - dB fc idle carrier frequency - 290 - kHz [1] Operates down to UVP threshold level and operates up to OVP threshold level. 9397 750 13847 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 14 January 2004 21 of 31 TDA8931 Philips Semiconductors Power comparator 1 × 20 W 14.6 Curves measured in typical application 001aab813 102 001aac013 102 THD + N (%) THD + N (%) 10 10 1 1 10−1 f = 6 kHz 10−1 f = 6 kHz 100 Hz 100 Hz 10−2 10−2 1 kHz 10−3 10−2 10−1 1 kHz 1 102 10 10−3 10−2 10−1 1 102 10 Po (W) Po (W) a. VP = 22 V; RL = 4 Ω. b. VP = 30 V; RL = 8 Ω. Fig 10. Total harmonic distortion-plus-noise as a function of output power 001aac014 1 001aac015 1 THD + N (%) THD + N (%) 10−1 10−1 1W 10−2 1W 10−2 10−3 10 102 103 104 105 10−3 10 102 103 104 fi (Hz) a. VP = 22 V; RL = 4 Ω; Po = 1 W. 105 fi (Hz) b. VP = 30 V; RL = 8 Ω; Po = 1 W. Fig 11. Total harmonic distortion-plus-noise as a function of frequency 9397 750 13847 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 14 January 2004 22 of 31 TDA8931 Philips Semiconductors Power comparator 1 × 20 W 001aac016 40 Po (W) G (dB) (1) 30 001aab814 22 18 (2) 20 (1) (2) (3) (4) 14 10 10 0 10 15 20 25 30 VP (V) 35 10 102 103 104 105 fi (Hz) (1) RL = 4 Ω; THD = 10 %. (1) RL = 8 Ω. (2) RL = 4 Ω; THD = 0.5 %. (2) RL = 4 Ω. (3) RL = 8 Ω; THD = 10 %. Conditions: VP = 22 V; Vi = 100 mV. (4) RL = 8 Ω; THD = 0.5 %. Conditions: fi = 1 kHz. Fig 12. Output power as a function of supply voltage 001aac017 0 Fig 13. Gain as a function of frequency 001aac018 100 S/N (dB) SVRR (dB) 90 −20 80 (1) −40 (3) 70 (2) (4) −60 10 102 103 104 105 60 10−2 10−1 1 102 10 Po (W) fi (Hz) (1) RL = 8 Ω. Conditions: VP = 22 V; RL = 4 Ω; including AES 20 kHz filter. (2) RL = 4 Ω. (3) RL = 4 Ω with feed forward network 470 kΩ /15 nF. (4) RL = 8 Ω with feed forward network 470 kΩ /15 nF. Conditions: Vripple = 2 V (p-p). Fig 14. SVRR as a function of frequency Fig 15. Signal-to-noise ratio as a function of output power 9397 750 13847 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 14 January 2004 23 of 31 TDA8931 Philips Semiconductors Power comparator 1 × 20 W 001aac019 100 (1) n (%) 001aac020 2.5 Pd (W) (2) 80 2.0 60 1.5 40 1.0 20 0.5 (1) (2) 0 0 4 8 12 16 20 0 10−2 10−1 1 (1) VP = 30 V; RL = 8 Ω. (1) VP = 30 V; RL = 8 Ω. (2) VP = 22 V; RL = 4 Ω. (2) VP = 22 V; RL = 4 Ω. Conditions: fi = 1 kHz. 102 10 Po (W) Po (W) Conditions: fi = 1 kHz. Fig 16. Efficiency as a function of total output power Fig 17. Power dissipation as a function of total output power 15. Test information Remark: Only valid if the TDA8931 is used as an audio amplifier. 15.1 Quality information The General Quality Specification for Integrated Circuits, SNW-FQ-611 is applicable. 9397 750 13847 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 14 January 2004 24 of 31 TDA8931 Philips Semiconductors Power comparator 1 × 20 W 16. Package outline SO20: plastic small outline package; 20 leads; body width 7.5 mm SOT163-1 D E A X c HE y v M A Z 20 11 Q A2 A (A 3) A1 pin 1 index θ Lp L 10 1 e bp detail X w M 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y mm 2.65 0.3 0.1 2.45 2.25 0.25 0.49 0.36 0.32 0.23 13.0 12.6 7.6 7.4 1.27 10.65 10.00 1.4 1.1 0.4 1.1 1.0 0.25 0.25 0.1 0.01 0.019 0.013 0.014 0.009 0.51 0.49 0.30 0.29 0.05 0.419 0.043 0.055 0.394 0.016 inches 0.1 0.012 0.096 0.004 0.089 0.043 0.039 0.01 0.01 Z (1) 0.9 0.4 0.035 0.004 0.016 θ o 8 o 0 Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT163-1 075E04 MS-013 JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-19 Fig 18. Package outline SOT163-1 (SO20) 9397 750 13847 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 14 January 2004 25 of 31 TDA8931 Philips Semiconductors Power comparator 1 × 20 W 17. Soldering 17.1 Introduction to soldering surface mount packages This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our Data Handbook IC26; Integrated Circuit Packages (document order number 9398 652 90011). There is no soldering method that is ideal for all surface mount IC packages. Wave soldering can still be used for certain surface mount ICs, but it is not suitable for fine pitch SMDs. In these situations reflow soldering is recommended. 17.2 Reflow soldering Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Driven by legislation and environmental forces the worldwide use of lead-free solder pastes is increasing. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 seconds and 200 seconds depending on heating method. Typical reflow peak temperatures range from 215 °C to 270 °C depending on solder paste material. The top-surface temperature of the packages should preferably be kept: • below 225 °C (SnPb process) or below 245 °C (Pb-free process) – for all BGA, HTSSON..T and SSOP..T packages – for packages with a thickness ≥ 2.5 mm – for packages with a thickness < 2.5 mm and a volume ≥ 350 mm3 so called thick/large packages. • below 240 °C (SnPb process) or below 260 °C (Pb-free process) for packages with a thickness < 2.5 mm and a volume < 350 mm3 so called small/thin packages. Moisture sensitivity precautions, as indicated on packing, must be respected at all times. 17.3 Wave soldering Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the double-wave soldering method was specifically developed. If wave soldering is used the following conditions must be observed for optimal results: • Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. • For packages with leads on two sides and a pitch (e): – larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; 9397 750 13847 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 14 January 2004 26 of 31 TDA8931 Philips Semiconductors Power comparator 1 × 20 W – smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end. • For packages with leads on four sides, the footprint must be placed at a 45° angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time of the leads in the wave ranges from 3 seconds to 4 seconds at 250 °C or 265 °C, depending on solder material applied, SnPb or Pb-free respectively. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. 17.4 Manual soldering Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 seconds to 5 seconds between 270 °C and 320 °C. 17.5 Package related soldering information Table 14: Suitability of surface mount IC packages for wave and reflow soldering methods Package [1] Soldering method Wave Reflow [2] BGA, HTSSON..T [3], LBGA, LFBGA, SQFP, SSOP..T [3], TFBGA, VFBGA, XSON not suitable suitable DHVQFN, HBCC, HBGA, HLQFP, HSO, HSOP, HSQFP, HSSON, HTQFP, HTSSOP, HVQFN, HVSON, SMS not suitable [4] suitable PLCC [5], SO, SOJ suitable suitable not recommended [5] [6] suitable SSOP, TSSOP, VSO, VSSOP not recommended [7] suitable CWQCCN..L [8], PMFP [9], WQCCN..L [8] not suitable LQFP, QFP, TQFP [1] For more detailed information on the BGA packages refer to the (LF)BGA Application Note (AN01026); order a copy from your Philips Semiconductors sales office. [2] All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods. [3] These transparent plastic packages are extremely sensitive to reflow soldering conditions and must on no account be processed through more than one soldering cycle or subjected to infrared reflow soldering with peak temperature exceeding 217 °C ± 10 °C measured in the atmosphere of the reflow oven. The package body peak temperature must be kept as low as possible. 9397 750 13847 Preliminary data sheet not suitable © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 14 January 2004 27 of 31 TDA8931 Philips Semiconductors Power comparator 1 × 20 W [4] These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side, the solder might be deposited on the heatsink surface. [5] If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. [6] Wave soldering is suitable for LQFP, QFP and TQFP packages with a pitch (e) larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. [7] Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. [8] Image sensor packages in principle should not be soldered. They are mounted in sockets or delivered pre-mounted on flex foil. However, the image sensor package can be mounted by the client on a flex foil by using a hot bar soldering process. The appropriate soldering profile can be provided on request. [9] Hot bar soldering or manual soldering is suitable for PMFP packages. 9397 750 13847 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 14 January 2004 28 of 31 TDA8931 Philips Semiconductors Power comparator 1 × 20 W 18. Revision history Table 15: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes TDA8931_1 20050114 Preliminary data sheet - 9397 750 13847 - 9397 750 13847 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 14 January 2004 29 of 31 TDA8931 Philips Semiconductors Power comparator 1 × 20 W 19. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 20. Definitions 21. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 22. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 13847 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 14 January 2004 30 of 31 TDA8931 Philips Semiconductors Power comparator 1 × 20 W 23. Contents 1 2 3 4 5 6 7 7.1 7.2 8 8.1 8.2 8.3 8.4 8.5 8.6 8.6.1 8.6.2 8.6.3 8.6.4 8.6.5 8.6.6 9 10 11 12 13 14 14.1 14.2 14.3 14.4 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pinning information . . . . . . . . . . . . . . . . . . . . . . 4 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 Functional description . . . . . . . . . . . . . . . . . . . 5 General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Interfacing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Input comparator. . . . . . . . . . . . . . . . . . . . . . . . 5 Half supply voltage input reference (pin HVPI) . 5 Half supply voltage capacitor charger (pin HVP) 6 Protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Overtemperature protection (OTP) . . . . . . . . . . 6 Overcurrent protection (OCP). . . . . . . . . . . . . . 6 Overvoltage protection (OVP). . . . . . . . . . . . . . 6 Undervoltage protection (UVP). . . . . . . . . . . . . 7 Supply voltage drop protection . . . . . . . . . . . . . 7 Overdissipation protection (ODP) . . . . . . . . . . . 7 Internal circuitry. . . . . . . . . . . . . . . . . . . . . . . . . 8 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 11 Thermal characteristics. . . . . . . . . . . . . . . . . . 11 Static characteristics. . . . . . . . . . . . . . . . . . . . 11 Dynamic characteristics . . . . . . . . . . . . . . . . . 13 Application information. . . . . . . . . . . . . . . . . . 15 Output power estimation. . . . . . . . . . . . . . . . . 17 Output current limiting. . . . . . . . . . . . . . . . . . . 18 Low pass filter considerations. . . . . . . . . . . . . 18 Thermal behavior (printed-circuit board considerations) . . . . . . . . . . . . . . . . . . . . . . . . 18 14.4.1 Thermal layout including vias . . . . . . . . . . . . . 19 14.4.2 Thermal considerations . . . . . . . . . . . . . . . . . 19 14.5 Measured performance figures of mono amplifier with TDA8931 . . . . . . . . . . . . . . . . . . . . . . . . . 21 14.6 Curves measured in typical application . . . . . 22 15 Test information . . . . . . . . . . . . . . . . . . . . . . . . 24 15.1 Quality information . . . . . . . . . . . . . . . . . . . . . 24 16 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 25 17 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 17.1 Introduction to soldering surface mount packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 17.2 Reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 26 17.3 17.4 17.5 18 19 20 21 22 Wave soldering. . . . . . . . . . . . . . . . . . . . . . . . Manual soldering . . . . . . . . . . . . . . . . . . . . . . Package related soldering information . . . . . . Revision history . . . . . . . . . . . . . . . . . . . . . . . Data sheet status. . . . . . . . . . . . . . . . . . . . . . . Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . Contact information . . . . . . . . . . . . . . . . . . . . 26 27 27 29 30 30 30 30 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 14 January 2004 Document number: 9397 750 13847 Published in The Netherlands