PHILIPS TEA1098TV

INTEGRATED CIRCUITS
DATA SHEET
TEA1098
Speech and handsfree IC
Product specification
Supersedes data of 1999 May 20
File under Integrated Circuits, IC03
1999 Oct 14
Philips Semiconductors
Product specification
Speech and handsfree IC
TEA1098
• Dynamic limiter on loudspeaker amplifier to prevent
distortion
FEATURES
Line interface
• Low DC line voltage
• Logarithmic volume control on loudspeaker amplifier via
linear potentiometer
• Voltage regulator with adjustable DC voltage
• Duplex controller consisting of:
• Symmetrical high impedance inputs (70 kΩ) for
dynamic, magnetic or electret microphones
– Signal and noise envelope monitors for both
channels (with adjustable sensitivities and timing)
• DTMF input with confidence tone on earphone and/or
loudspeaker
– Decision logic (with adjustable switch-over and Idle
mode timing)
• Receive amplifier for dynamic, magnetic or
piezo-electric earpieces (with externally adjustable gain)
– Voice switch control (with adjustable switching range
and constant sum of gain during switching).
• Automatic Gain Control (AGC) for true line loss
compensation.
APPLICATIONS
Supplies
• Line powered telephone sets.
• Provides a strong 3.35 V regulated supply for
microcontrollers or diallers
GENERAL DESCRIPTION
• Provides filtered power supply, optimized according to
line current
The TEA1098 is an analog bipolar circuit dedicated to
telephony applications. It includes a line interface, handset
(HS) microphone and earpiece amplifiers, handsfree (HF)
microphone and loudspeaker amplifiers and a duplex
controller with signal and noise monitors on both channels.
• Filtered 2.0 V power supply output for electret
microphone
• PD logic input for power-down.
This IC provides a 3.35 V supply for a microcontroller or
dialler and a 2.0 V filtered voltage supply for an electret
microphone.
Handsfree
• Asymmetrical high input impedance for electret
microphone
• Loudspeaker amplifier with single-ended rail-to-rail
output and externally adjustable gain
ORDERING INFORMATION
PACKAGE
TYPE
NUMBER
NAME
TEA1098TV
VSO40
plastic very small outline package; 40 leads
SOT158-1
TEA1098H
QFP44
plastic quad flat package; 44 leads (lead length 1.3 mm);
body 10 × 10 × 1.75 mm
SOT307-2
TEA1098UH
1999 Oct 14
−
DESCRIPTION
VERSION
−
bare die; on foil
2
Philips Semiconductors
Product specification
Speech and handsfree IC
TEA1098
QUICK REFERENCE DATA
Iline = 15 mA; RSLPE = 20 Ω; Zline = 600 Ω; f = 1 kHz; Tamb = 25 °C for TEA1098H and TEA1098TV; Tj = 25 °C for
TEA1098UH; AGC pin connected to LN; PD = HIGH; HFC = LOW; MUTE = HIGH; measured according to test circuits;
unless otherwise specified.
SYMBOL
Iline
PARAMETER
line current operating range
CONDITIONS
MIN.
TYP.
MAX. UNIT
normal operation
11
−
130
mA
with reduced performance
1
−
11
mA
VSLPE
stabilized voltage between SLPE
and GND
Iline = 15 mA
3.4
3.7
4.0
V
Iline = 70 mA
5.7
6.1
6.5
V
VBB
regulated supply voltage for
internal circuitry
Iline = 15 mA
2.75
3.0
3.25
V
Iline = 70 mA
4.9
5.3
5.7
V
regulated supply voltage on pin
VDD
VBB > 3.35 V + 0.25 V (typ.)
3.1
3.35
3.6
V
otherwise
−
VBB − 0.25 −
IBB
current available on pin VBB
in speech mode
−
11
−
in handsfree mode
−
9
−
mA
IBB(pd)
current consumption on VBB
during power-down phase
PD = LOW
−
460
−
µA
Gv(MIC-LN)
voltage gain from pin MIC+/MIC−
to LN
VMIC = 5 mV (RMS)
43.3
44.3
45.3
dB
Gv(IR-RECO)
voltage gain from pin IR
(referenced to LN) to RECO
VIR = 8 mV (RMS)
28.7
29.7
30.7
dB
∆Gv(QR)
gain voltage range between pins
RECO and QR
−3
−
+15
dB
VTXIN = 3 mV (RMS);
RGATX = 30.1 kΩ
12.7
15.2
17.7
dB
VHFTX = 15 mV (RMS)
33.5
34.7
35.9
dB
VHFRX = 30 mV (RMS);
RGALS = 255 kΩ; Iline = 70 mA
25.5
28
30.5
dB
−
40
−
dB
−40
−
+12
dB
5.45
6.45
7.45
dB
VDD
Gv(TXIN-TXOUT) voltage gain from pin TXIN to
TXOUT
Gv(HFTX-LN)
voltage gain from pin HFTX to LN
Gv(HFRX-LSAO) voltage gain from pin HFRX
to LSAO
SWRA
switching range
∆SWRA
switching range adjustment
∆Gv(trx)
gain control range for transmit and Iline = 70 mA
receive amplifiers affected by the
AGC; with respect to Iline = 15 mA
1999 Oct 14
with RSWR referenced to
365 kΩ
3
V
mA
Philips Semiconductors
Product specification
Speech and handsfree IC
TEA1098
BLOCK DIAGRAM
LN 18 (15)
REG
SLPE
19
(16)
17
(14)
STARTER
(10) 13 VBB
R1
(19) 22 VDD
LINE CURRENT DETECTION
LOW VOLTAGE BEHAVIOUR
AGC 21 (18)
GND 16 (13)
SWITCH
AGC
POWER-DOWN
CURRENT SOURCES
(20) 23 MICS
(38) 1 PD
Tail currents for preamps
HFTX 39 (36)
TEA1098
DTMF 35 (32)
SUPPLY
MANAGEMENT
LOGIC
INPUTS
DECODING
(37) 40 HFC
(39) 2 MUTE
ATTENUATOR
MIC+ 34 (31)
MIC− 33 (30)
(27) 30 GATX
(26) 29 TXOUT
(29) 32 GNDTX
TXIN 31 (28)
(24) 27 SWT
(25) 28 IDT
TSEN 8 (4)
TENV 7 (3)
TNOI 6 (2)
RNOI 9 (5)
RENV 11 (7)
TX AND RX
ENVELOPE AND NOISE
DETECTORS
BUFFERS
AND
COMPARATORS
(21) 24 STAB
DUCO LOGIC
SWT STATUS
VOICE
SWITCH
(22) 25 SWR
RSEN 10 (6)
VOLUME
CONTROL
GALS 14 (11)
(23) 26 VOL
(1) 5 HFRX
LSAO 15 (12)
DLC 12 (8)
DYNAMIC
LIMITER
(17) 20 IR
RECO 38 (35)
ATTENUATOR
GARX 37 (34)
QR 36 (33)
MGL317
Pin numbers in parenthesis apply to the TEA1098H. Pin numbers not in parenthesis apply to the TEA1098TV.
Fig.1 Block diagram.
1999 Oct 14
4
Philips Semiconductors
Product specification
Speech and handsfree IC
TEA1098
PINNING
PIN
PAD
SYMBOL
DESCRIPTION
TEA1098TV
TEA1098H
TEA1098UH
PD
1
38
41
power-down input (active LOW)
MUTE
2
39
42
logic input (active LOW)
n.c.
3
40
43
not connected
n.c.
4
41
44
not connected
n.c.
−
42
45
not connected
n.c.
−
43
46
not connected
n.c.
−
44
47
not connected
HFRX
5
1
1
receive input for loudspeaker amplifier
TNOI
6
2
2
transmit noise envelope timing adjustment
TENV
7
3
3
transmit signal envelope timing adjustment
TSEN
8
4
4
transmit signal envelope sensitivity adjustment
RNOI
9
5
5
receive noise envelope timing adjustment
RSEN
10
6
6
receive signal envelope sensitivity adjustment
RENV
11
7
7
receive signal envelope timing adjustment
DLC
12
8
8
n.c.
−
9
9 and 13
VBB
13
10
10
stabilized supply for internal circuitry
GALS
14
11
11
loudspeaker amplifier gain adjustment
LSAO
15
12
12
loudspeaker amplifier output
GND
16
13
14 and 15
ground reference
SLPE
17
14
16
line current sense
LN
18
15
17
positive line terminal
REG
19
16
18
line voltage regulator decoupling
IR
20
17
19
receive amplifier input
AGC
21
18
20
automatic gain control/line loss compensation
VDD
22
19
21
3.35 V regulated voltage supply for microcontrollers
MICS
23
20
22
microphone supply
STAB
24
21
23
reference current adjustment
SWR
25
22
24
switching range adjustment
VOL
26
23
25
loudspeaker volume adjustment
SWT
27
24
26
switch-over timing adjustment
IDT
28
25
27
Idle mode timing adjustment
TXOUT
29
26
28
HF microphone amplifier output
GATX
30
27
29
HF microphone amplifier gain adjustment
TXIN
31
28
30
HF microphone amplifier input
GNDTX
32
29
31 to 32
MIC−
33
30
33
negative HS microphone amplifier input
MIC+
34
31
34
positive HS microphone amplifier input
1999 Oct 14
dynamic limiter capacitor for the loudspeaker amplifier
not connected
ground reference for microphone amplifiers
5
Philips Semiconductors
Product specification
Speech and handsfree IC
PIN
TEA1098
PAD
SYMBOL
DESCRIPTION
TEA1098TV
TEA1098H
TEA1098UH
DTMF
35
32
35
dual tone multi-frequency input
QR
36
33
36
earpiece amplifier output
GARX
37
34
37
earpiece amplifier gain adjustment
RECO
38
35
38
receive amplifier output
HFTX
39
36
39
transmit input for line amplifier
HFC
40
37
40
logic input
handbook, halfpage
40 HFC
PD 1
MUTE 2
39 HFTX
n.c. 3
38 RECO
n.c. 4
37 GARX
HFRX 5
36 QR
TNOI 6
35 DTMF
TENV 7
34 MIC+
TSEN 8
33 MIC−
RNOI 9
32 GNDTX
RSEN 10
31 TXIN
TEA1098TV
RENV 11
30 GATX
DLC 12
29 TXOUT
VBB 13
28 IDT
GALS 14
27 SWT
LSAO 15
26 VOL
GND 16
25 SWR
SLPE 17
24 STAB
LN 18
23 MICS
REG 19
22 VDD
IR 20
21 AGC
MGL341
Fig.2 Pin configuration (TEA1098TV).
1999 Oct 14
6
Philips Semiconductors
Product specification
34 GARX
35 RECO
36 HFTX
37 HFC
40 n.c.
41 n.c.
42 n.c.
43 n.c.
44 n.c.
handbook, full pagewidth
38 PD
TEA1098
39 MUTE
Speech and handsfree IC
33 QR
HFRX 1
TNOI 2
32 DTMF
TENV 3
31 MIC+
TSEN 4
30 MIC−
RNOI 5
29 GNDTX
RSEN 6
28 TXIN
TEA1098H
RENV 7
27 GATX
26 TXOUT
DLC 8
25 IDT
n.c. 9
SWR 22
STAB 21
VDD 19
MICS 20
AGC 18
IR 17
REG 16
LN 15
23 VOL
SLPE 14
GALS 11
GND 13
24 SWT
LSAO 12
VBB 10
FCA020
Fig.3 Pin configuration (TEA1098H).
FUNCTIONAL DESCRIPTION
The voltage between pins SLPE and REG is used by the
internal regulator to generate the stabilized reference
voltage and is decoupled by a capacitor connected
between pins LN and REG. This capacitor, converted into
an equivalent inductance realizes the set impedance
conversion from its DC value (RSLPE) to its AC value (done
by an external impedance).
All data values given in this chapter are typical, except
when otherwise specified.
Supplies
LINE INTERFACE AND INTERNAL SUPPLY (PINS LN, SLPE,
REG AND VBB)
The IC regulates the line voltage at pin LN which can be
calculated as follows:
The supply for the TEA1098 and its peripherals is obtained
from the line. The IC generates a stabilized reference
voltage (Vref) between pins SLPE and GND.
This reference voltage is equal to 3.7 V for line currents
below 18 mA. When the line current rises above 45 mA,
the reference voltage rises linearly to 6.1 V. For line
currents below 9 mA, Vref is automatically adjusted to a
lower value. The performance of the TEA1098 in this
so-called low voltage area is limited (see Section “Low
voltage behaviour”). The reference voltage is temperature
compensated.
V LN = V ref + R SLPE × I SLPE
I SLPE = I line – I
x
where:
Iline = line current.
Ix = current consumed on pin LN (approximately a
few µA).
ISLPE = current flowing through the RSLPE resistor.
1999 Oct 14
7
Philips Semiconductors
Product specification
Speech and handsfree IC
TEA1098
The preferred value for RSLPE is 20 Ω. Changing this value
not only affects the DC characteristics, it also influences
the transmit gains to the line, the gain control
characteristic, the sidetone level, and the maximum output
swing on the line.
The current switch TR1-TR2 is intended to reduce
distortion of large AC line signals. Current ISLPE is supplied
to VBB via TR1 when the voltage on pin SLPE is above
VBB + 0.25 V. When the voltage on pin SLPE is below this
value, ISLPE is shunted to GND via TR2.
Figure 4 shows that the internal circuit is supplied by pin
VBB, which combined with the line interface is a strong
supply point.
Voltage Vref can be increased by connecting an external
resistor between pins REG and SLPE. For large line
currents, this increase can slightly affect some dynamic
performances such as maximum signal level on the line at
2% Total Harmonic Distortion (THD). The external resistor
does not affect the voltage on pin VBB; see Fig.5 for the
main DC voltages.
The line current through resistor RSLPE is sunk by the VBB
voltage stabilizer, and is suitable for supplying a
loudspeaker amplifier or any peripheral IC. Voltage VBB is
3.0 V at line currents below 18 mA and rises linearly to
5.3 V when the line current rises above 45 mA. It is
temperature compensated.
LN
handbook, full pagewidth
TR2
RSLPE
GND
20 Ω
TR1
SLPE
CREG
4.7 µF
VBB
E2
E1
TP1
D1
J1
R3
D1
REG
R1
TN2
R2
from
preamp
J2
TN1
GND
GND
Fig.4 Line interface principle.
1999 Oct 14
8
MGM298
Philips Semiconductors
Product specification
Speech and handsfree IC
TEA1098
FCA049
8
handbook, full pagewidth
LN
voltages
(V)
SLPE
6
VBB
4
VDD
MICS
2
0
0
0.01
0.03
0.02
0.04
0.05
0.06
Iline (A)
0.07
Fig.5 Main DC voltages.
VDD SUPPLY FOR MICROCONTROLLERS (PIN VDD)
LOW VOLTAGE BEHAVIOUR
The voltage on the VDD supply point follows the voltage on
VBB with a difference typically of 250 mV, internally limited
to 3.35 V. This voltage is temperature compensated.
This supply point can provide a current of up to typically
3 mA. Its internal consumption stays low (a few 10 nA) as
long as VDD does not exceed 1.5 V (see Fig.6).
For line currents below 9 mA, the reference voltage is
automatically adjusted to a lower value; the VBB voltage
follows the SLPE voltage with a difference of 250 mV.
Any excess current available, other than for the purposes
of DC biasing the IC, will be small. At low reference
voltage, the IC has limited performance.
An external voltage can be connected to VDD with limited
extra consumption on VDD (typically 100 µA). This voltage
source should not be below 3.5 V or above 6 V.
VBB and VDD can supply current to external circuits within
the line limits, taking into account the internal current
consumption.
When voltage VBB falls below 2.7 V, it is detected by the
receive dynamic limiter circuit connected to pin LSAO and
is continuously activated, discharging the capacitor
connected to pin DLC. In the DC condition, the
loudspeaker is then automatically disabled below this
voltage.
When VBB falls below 2.5 V, the TEA1098 is forced into a
low voltage mode irrespective of the logic input levels. This
is a speech mode with reduced performance which only
enables the microphone channel (between the MIC inputs
and pin LN) and the earpiece amplifier. These two
channels are able to deliver signals for line currents as
small as 3 mA. The HFC input is tied to GND sinking a
current of typically 300 µA.
SUPPLY FOR MICROPHONE (PINS MICS AND GNDTX)
The MICS output can be used as a supply for an electret
microphone. Its voltage is equal to 2.0 V; it can source a
current of up to 1 mA and has an output impedance equal
to 200 Ω.
1999 Oct 14
9
Philips Semiconductors
Product specification
Speech and handsfree IC
TEA1098
FCA050
10 8
handbook, full pagewidth
IDD
(pA)
10 7
10 6
10 5
10 4
10 3
10 2
10
1.0
1.5
2.5
2.0
VDD (V)
3.0
Fig.6 Current consumption on VDD.
POWER-DOWN MODE (PIN PD)
The microphone inputs are biased at a voltage of one
diode.
To reduce consumption during dialling or register recall
(flash), the TEA1098 is provided with a power-down input
(PD). When the voltage on pin PD is LOW, the current
consumption from VBB and VDD is reduced to typically
460 µA. Therefore a capacitor of 470 µF on VBB is
sufficient to power the TEA1098 during pulse dialling or
flash. The PD input has a pull-up structure. In this mode,
the capacitor CREG is internally disconnected.
Automatic gain control is provided for line loss
compensation.
DTMF AMPLIFIER (PINS DTMF, LN AND RECO)
The TEA1098 has an asymmetrical DTMF input. The input
impedance between DTMF and GND is typically 20 kΩ.
The voltage gain between pins DTMF and LN is set to
25.35 dB. Without output limitation, the input stage can
accept signals of up to 180 mV (RMS) at 2% THD (room
temperature).
Transmit channels (pins MIC+, MIC−, DTMF,
HFTX and LN)
HANDSET MICROPHONE AMPLIFIER (PINS MIC+, MIC−
AND LN)
When the DTMF amplifier is enabled, dialling tones may
be sent on the line. These tones can be heard in the
earpiece or in the loudspeaker at a low level. This is called
the confidence tone. The voltage attenuation between pins
DTMF and RECO is typically −16.5 dB. This input is
DC biased at 0 V.
The TEA1098 has symmetrical microphone inputs.
The input impedance between pins MIC+ and MIC− is
typically 70 kΩ. The voltage gain between pins MIC+/MIC−
and LN is set to 44.3 dB. Without output limitation, the
microphone input stage can accept signals of up to
18 mV (RMS) at 2% THD (room temperature).
1999 Oct 14
The automatic gain control has no effect on these
channels.
10
Philips Semiconductors
Product specification
Speech and handsfree IC
TEA1098
HANDSFREE TRANSMIT AMPLIFIER (PINS HFTX AND LN)
AGC (pin AGC)
The TEA1098 has an asymmetrical HFTX input, which is
mainly intended for use in combination with the TXOUT
output. The input impedance between HFTX and GND is
typically 20 kΩ. The voltage gain between
pins HFTX and LN is set to 34.7 dB. Without output
limitation, the input stage can accept signals of up to
95 mV (RMS) at 2% THD (room temperature). The HFTX
input is biased at a voltage of two diodes.
The TEA1098 performs automatic line loss compensation,
which fits well with the true line attenuation. The automatic
gain control varies the gain of some transmit and receive
amplifiers in accordance with the DC line current.
The control range is 6.45 dB for Gv(MIC-LN) and Gv(IR-RECO),
and 6.8 dB for Gv(HFTX-LN), which corresponds
approximately to a line length of 5.5 km for a 0.5 mm
twisted-pair copper cable.
Automatic gain control is provided for line loss
compensation.
To enable this gain control, the pin AGC must be shorted
to pin LN. The start current for compensation corresponds
to a line current of typically 23 mA and a stop current of
57 mA. The start current can be increased by connecting
an external resistor between pins AGC and LN. It can be
increased by up to 40 mA (using a resistor of typically
80 kΩ). The start and stop current will be maintained at a
ratio of 2.5. By leaving the AGC pin open, the gain control
is disabled and no line loss compensation occurs.
Receive channels (pins IR, RECO, GARX and QR)
RX AMPLIFIER (PINS IR AND RECO)
The receive amplifier has one input (IR) which is
referenced to the line. The input impedance between pins
IR and LN is typically 20 kΩ and the DC bias between
these pins is equal to the voltage of one diode. The gain
between pins IR (referenced to LN) and RECO is typically
29.7 dB. Without output limitation, the input stage can
accept signals of up to 50 mV (RMS) at 2% THD (room
temperature).
Handsfree application
Figure 7 shows a loop is formed by the sidetone network
in the line interface section, and by the acoustic coupling
between loudspeaker and microphone in the handsfree
section. A loop-gain of greater than 1 causes howl.
To prevent howl in full duplex applications, the loop-gain
must be set much lower than 1. This is achieved by the
duplex controller which detects the channel with the
‘largest’ signal and controls the gains of the microphone
and the loudspeaker amplifiers so that the sum of their
gains remains constant.
The receive amplifier has a rail-to-rail output (RECO),
which is designed for use with high ohmic (real) loads of
more than 5 kΩ. This output is biased at a voltage of two
diodes.
Automatic gain control is provided for line loss
compensation.
EARPIECE AMPLIFIER (PINS GARX AND QR)
Therefore in the handsfree application, the circuit can have
three stable modes:
The earpiece amplifier is an operational amplifier which
has an output (QR) and an inverting input (GARX).
Its input signal is fed by a decoupling capacitor from the
receive amplifier output (RECO) to two resistors which set
the required gain or attenuation from −3 to +15 dB
compared to the receive gain.
1. Transmit mode (Tx mode).
The microphone amplifier is at maximum gain, and the
loudspeaker amplifier is at minimum gain.
2. Receive mode (Rx mode).
The microphone amplifier is at minimum gain, and the
loudspeaker amplifier is at maximum gain.
Two external capacitors CGAR (connected between GAR
and QR) and CGARS (connected between GAR and GND)
ensure stability. The CGAR capacitor provides a first-order
low-pass filter. The cut-off frequency corresponds to the
time constant CGAR × Re2. The relationship
CGARS ≥ 10 × CGAR must be satisfied.
3. Idle mode.
The microphone amplifier and the loudspeaker
amplifier are both midway between maximum and
minimum gain.
The difference between the maximum and minimum gain
is called the switching range.
The earpiece amplifier has a rail-to-rail output (QR) biased
at a voltage of two diodes. It is designed for use with low
ohmic (real) loads of 150 Ω, or capacitive loads of 100 nF
in series with 100 Ω.
1999 Oct 14
11
Philips Semiconductors
Product specification
Speech and handsfree IC
TEA1098
handbook, full pagewidth
acoustic
coupling
telephone
line
DUPLEX
CONTROL
HYBRID
sidetone
MGM299
Fig.7 Handsfree telephone set principles.
HANDSFREE MICROPHONE CHANNEL: PINS TXIN, GATX,
TXOUT AND GNDTX (see Fig.8)
Switch-over from one mode to the other is smooth and
click-free. The output (TXOUT) is biased at a voltage of
two diodes and has a current capability of 20 µA (RMS).
In Tx mode, the overall gain of the microphone amplifier
(from pins TXIN to TXOUT) can be adjusted from
0 up to 31 dB to suit specific application requirements.
The gain is proportional to the value of RGATX and equals
15.2 dB when RGATX is 30.1 kΩ. Without output limitation,
the microphone input stage can accept signals of up to
18 mV (RMS) at 2% THD (room temperature).
The TEA1098 has an asymmetrical handsfree microphone
input (TXIN) with an input resistance of 20 kΩ.
The input DC bias is 0 V. The gain of the input stage varies
according to the TEA1098 mode. In Tx mode, it has
maximum gain; in Rx mode, it has minimum gain, and in
Idle mode, it is midway between maximum and minimum
gain.
handbook, full pagewidth
VBB
GATX
30
(27)
TXOUT
29
(26)
GNDTX
32
(29)
RGATX
RMIC
CMIC
31 TXIN
(28)
to
envelope
detector
V
I
I
from
voice
switch
V
MGL342
Pin numbers in parenthesis apply to the TEA1098H. Pin numbers not in parenthesis apply to the TEA1098TV.
Fig.8 Handsfree microphone channel.
1999 Oct 14
12
Philips Semiconductors
Product specification
Speech and handsfree IC
TEA1098
LOUDSPEAKER CHANNEL
In Rx mode, the overall gain of the loudspeaker amplifier
can be adjusted from 0 up to 35 dB to suit specific
application requirements. The gain from pin HFRX to pin
LSAO is proportional to the value of RGALS and is 28 dB
when RGALS is 255 kΩ. It is recommended that a capacitor
is connected in parallel with RGALS to provide a first-order
low-pass filter.
Loudspeaker amplifier: pins HFRX, GALS and LSAO
The TEA1098 loudspeaker amplifier has an asymmetrical
input with an input resistance of 20 kΩ between pins HFRX
and GND. It is biased at a voltage of two diodes. Without
output limitation, the input stage can accept signals of up
to 580 mV (RMS) at 2% THD (room temperature).
Volume control: pin VOL
The gain of the input stage varies according to the
TEA1098 mode. In Rx mode, it has maximum gain; in
Tx mode, it has minimum gain and in Idle mode, it is
halfway between maximum and minimum gain.
Switch-over from one mode to the other is smooth and
click-free. The rail-to-rail output stage is designed to power
a loudspeaker connected as a single-ended load (between
pins LSAO and GND).
The loudspeaker amplifier gain can be adjusted by the
potentiometer RVOL. For logarithmic gain control, a linear
potentiometer can be used. Each 1.9 kΩ increase of RVOL
results in a gain loss of 3 dB. The maximum gain reduction
using the volume control is internally limited to the
switching range (see Fig.9).
handbook, full pagewidth
RGALS
CGALS
to
logic
to/from
voice switch
to
envelope
detector
14 GALS
(11)
VBB
15 LSAO
(12)
V
I
I
V
HFRX 5
(1)
CLSAO
12 DLC
(8)
DYNAMIC
LIMITER
VOLUME
CONTROL
CDLC
VOL 26
(23) R
VOL
MGL343
Pin numbers in parenthesis apply to the TEA1098H. Pin numbers not in parenthesis apply to the TEA1098TV.
Fig.9 Loudspeaker channel.
Dynamic limiter: pin DLC
250 ms). Both attack and release times are proportional to
the value of the capacitor CDLC.
The TEA1098 dynamic limiter prevents clipping of the
loudspeaker output stage and protects the operation of the
circuit when the supply voltage at VBB falls below 2.7 V.
The total harmonic distortion of the loudspeaker output
stage, in reduced gain mode, stays below 2% up to 10 dB
(minimum) of input voltage overdrive [providing VHFRX is
below 580 mV (RMS)].
Hard clipping of the loudspeaker output stage is prevented
by rapidly reducing the gain when the output stage starts
to saturate. The time taken to effect gain reduction
(clipping attack time) is approximately a few milliseconds.
The circuit stays in the reduced gain mode until the peaks
of the loudspeaker signals no longer cause saturation.
The gain of the loudspeaker amplifier then returns to its
normal value within the clipping release time (typically
1999 Oct 14
When the supply voltage falls below an internal threshold
voltage of 2.7 V, the gain of the loudspeaker amplifier is
reduced rapidly (approximately 1 ms). When the supply
voltage rises above 2.7 V, the gain of the loudspeaker
amplifier is increased. By forcing a level lower than 0.2 V
on pin DLC, the loudspeaker amplifier is muted and the
TEA1098 is automatically forced into the Tx mode.
13
Philips Semiconductors
Product specification
Speech and handsfree IC
TEA1098
In the basic application, (see Fig.19), it is assumed that
VTXIN = 1 mV (RMS) and VHFRX = 100 mV (RMS) nominal
and RTSEN and RRSEN both have a value of 10 kΩ. When
capacitors CTSEN and CRSEN both have a value of 100 nF,
the cut-off frequency is at 160 Hz.
DUPLEX CONTROLLER
Signal and noise envelope detectors: pins TSEN, TENV,
TNOI, RSEN, RENV and RNOI
The strength of signal level and background noise in both
channels is monitored by signal envelope detectors and
noise envelope detectors respectively. The outputs of the
envelope detectors provide inputs to the decision logic.
The signal and noise envelope detectors are shown in
Fig.10.
The buffer amplifiers feeding the compressed signals to
pins TENV and RENV have a maximum source current of
120 µA and a maximum sink current of 1 µA. Capacitors
CTENV and CRENV set the timing of both signal envelope
detectors. In the basic application, the value of both
capacitors is 470 nF. Because of the logarithmic
compression, each 6 dB signal increase means an 18 mV
increase on the signal envelopes at pins TENV or RENV
(room temperature). Thus, timings can be expressed in
dB/ms. At room temperature, the 120 µA sourced current
corresponds to a maximum signal envelope rise-slope of
85 dB/ms, which is sufficient to track normal speech
signals. The 1 µA current sunk by pin TENV or pin RENV
corresponds to a maximum fall-slope of 0.7 dB/ms. This is
sufficient for a smooth envelope and also eliminates the
effect of echoes on switching behaviour.
For the transmit channel, the signal between pin TXIN and
pin TSEN is amplified by 40 dB. For the receive channel,
the signal between pin HFRX and pin RSEN is amplified
by 0 dB.
The signals between pin TSEN and pin TENV, and
between pin RSEN and pin RENV are logarithmically
compressed and buffered.
The sensitivity of the envelope detectors is set by
resistors RTSEN and RRSEN. The capacitors connected in
series with these two resistors block any DC component
and form a first-order high-pass filter.
handbook, full pagewidth
DUPLEX CONTROLLER
to logic
to logic
LOG
LOG
from
microphone
amplifier
from
loudspeaker
amplifier
TSEN
TENV
TNOI
RSEN
RENV
RNOI
8 (4)
7 (3)
6 (2)
10 (6)
11 (7)
9 (5)
RTSEN
CTSEN
RRSEN
CTENV
CTNOI
CRSEN
CRENV
CRNOI
MGL344
Pin numbers in parenthesis apply to the TEA1098H. Pin numbers not in parenthesis apply to the TEA1098TV.
Fig.10 Signal and noise envelope detectors.
1999 Oct 14
14
Philips Semiconductors
Product specification
Speech and handsfree IC
TEA1098
The 120 µA sink current corresponds to a maximum
fall-slope of approximately 8.5 dB/ms. However, because
the noise envelope tracks the fall of the signal envelope, it
will never fall faster than approximately 0.7 dB/ms.
The behaviour of the signal envelope and noise envelope
detectors is illustrated in Fig.11.
To determine the noise level, the signals between
pin TENV and pin TNOI, and between pin RENV and
pin RNOI are buffered. The buffers have a maximum
source current of 1 µA and a maximum sink current of
120 µA.
Capacitors CTNOI and CRNOI set the timing of both noise
envelope detectors. In the basic application, see Fig.19,
the value of both capacitors is 4.7 µF.
At room temperature, the 1 µA sourced current
corresponds to a maximum noise envelope rise-slope of
approximately 0.07 dB/ms which is small enough to track
background noise without being affected by speech
bursts.
4 mV (RMS)
handbook, full pagewidth
MBG354
1 mV (RMS)
INPUT SIGNAL
SIGNAL ENVELOPE
A
36 mV
A
B
B
A: 85 dB/ms
B: 0.7 dB/ms
NOISE ENVELOPE
C
B: 0.7 dB/ms
C: 0.07 dB/ms
B
36 mV
C
B
time
Fig.11 Signal and noise envelope waveforms.
VENV − VNOI = 13 mV. This so called speech/noise
threshold is implemented in both channels.
Decision logic: pins IDT and SWT
The TEA1098 selects its mode of operation (Tx, Rx or Idle)
by comparing the signal and noise envelopes of both
channels. This is executed by the decision logic.
The resulting voltage on pin SWT is the input to the voice
switch.
The signal on pin TXIN contains both speech and the
acoustically coupled signal from the loudspeaker.
In Rx mode, the loudspeaker signal overrides the speech.
Therefore, the signal envelope on pin TENV consists
mainly of the loudspeaker signal. To correct this, an
attenuator is connected between pin TENV and the
TENV/RENV comparator. Its attenuation is equal to that
applied to the microphone amplifier.
To facilitate the distinction between signal and noise, the
signal is considered as speech when its envelope is more
than 4.3 dB above the noise envelope. At room
temperature, this is equal to a voltage difference of
1999 Oct 14
15
Philips Semiconductors
Product specification
Speech and handsfree IC
TEA1098
When a dial tone is present on the line, without monitoring,
it would be recognized as noise because it has a constant
amplitude. This would cause the TEA1098 to go into Idle
mode, and the user would hear the dial tone fade away.
To prevent this, a dial tone detector monitors input signals
between pins HFRX and GND. In standard applications,
the detector does not consider a signal level above
25 mV (RMS) to be noise. This level is proportional to the
value of RRSEN. Similarly, a transmit detector monitors
input signals between pins TXIN and GNDTX. In standard
applications the detector does not consider a signal level
above 0.75 mV (RMS) to be noise. This level is
proportional to the value of RTSEN.
Figure 12 shows that the output of the decision logic is a
current source. The logic table shows the relationship
between the input levels and the value of the current
source. The current source can charge or discharge the
capacitor CSWT at a switch-over current of 10 µA. If the
current is zero, the voltage on pin SWT becomes equal to
the voltage on pin IDT via the high-ohmic resistor RIDT
(idling). The resulting voltage difference between pins
SWT and IDT can vary between −400 and +400 mV and
determines the TEA1098 mode (see Table 1).
handbook, full pagewidth
IDT 28 (25)
DUPLEX CONTROLLER
Vref
LOGIC(1)
(3) 7 TENV
RIDT
(2) 6 TNOI
13 mV
SWT 27 (24)
ATTENUATOR
CSWT
(7) 11 RENV
(5) 9 RNOI
X
X
1
1
−10 µA
X
1
0
X
+10 µA
1
X
0
X
+10 µA
X
X
1
0
0
0
0
0
X
0
13 mV
Vdt
from logic
from dynamic
limiter
MGL345
(1) When DLC < 0.2 V, −10 µA is forced.
Pin numbers in parenthesis apply to the TEA1098H. Pin numbers not in parenthesis apply to the TEA1098TV.
Fig.12 Decision logic.
1999 Oct 14
16
Philips Semiconductors
Product specification
Speech and handsfree IC
Table 1
TEA1098
TEA1098 modes
VSWT − VIDT (mV)
of the transmit and the receive channels so that the sum of
both is held constant.
MODE
< −180
Tx mode
0
Idle mode
> 180
Rx mode
In Tx mode, the microphone amplifier is at maximum gain
and the loudspeaker amplifier is at minimum gain.
In Rx mode, their gains are the opposite. In Idle mode,
both microphone and loudspeaker amplifiers are midway
between maximum and minimum gain.
The switch-over timing can be set by capacitor CSWT and
the Idle mode timing can be set by capacitor CSWT and
resistor RIDT. In the basic application given in Fig.19, CSWT
is 220 nF and RIDT is 2.2 MΩ. This enables a switch-over
time from Tx to Rx mode or vice-versa of approximately
13 ms (580 mV swing on pin SWT). The switch-over time
from Idle mode to Tx or Rx mode is approximately 4 ms
(180 mV swing on pin SWT).
The difference between the maximum and minimum gain
is called the switching range. This range is determined by
the ratio of resistors RSWR to RSTAB and is adjustable
between 0 and 52 dB. Resistor RSTAB should be 3.65 kΩ
which sets an internally used reference current. In the
basic application diagram (Fig.19), resistor RSWR is
365 kΩ which results in a switching range of 40 dB.
The switch-over behaviour is illustrated in Fig.14.
The switch-over time, from Rx or Tx mode to Idle mode is
equal to 4 × RIDTCSWT and is approximately 2 seconds
(Idle mode time).
In Rx mode, the gain of the loudspeaker amplifier can be
reduced using the volume control. At the same time, the
gain of the microphone amplifier increases, since the voice
switch keeps the sum of the gains constant (see dashed
curves in Fig.14). However, in Tx mode, the volume
control has no effect on the gains of the microphone or
loudspeaker amplifiers. Consequently, the switching range
is reduced when the volume is reduced. At maximum
reduction of volume, the switching range is 0 dB.
The DLC input overrides the decision logic. When the
voltage on pin DLC falls below 0.2 V, the capacitor CSWT
is discharged by 10 µA which selects Tx mode.
Voice switch: pins STAB and SWR
Figure 13 is a diagram of the voice switch. With a voltage
on pin SWT, the TEA1098 voice switch regulates the gains
halfpage
to
microphone
amplifier
Tx mode
from
SWT
Gvtx + Gvrx = C(1)
VOICE SWITCH
from
volume
control
Gvtx, Gvrx
(10 dB/div)
STAB
24 (21)
RSTAB
SWR
25 (22)
RSWR
Rx mode
RVOL
(Ω)
Gvtx
11400
7600
3800
0
0
3800
7600
11400
to
loudspeaker
amplifier
Gvrx
MGL346
−400
(1) C = constant.
Pin numbers in parenthesis apply to the TEA1098H.
Pin numbers not in parenthesis apply to the TEA1098TV.
−200
0
+200
+400
VSWT − VIDT (mV)
Fig.13 Voice switch.
1999 Oct 14
MGM305
idle
mode
handbook, halfpage
DUPLEX CONTROLLER
Fig.14 Switch-over behaviour.
17
Philips Semiconductors
Product specification
Speech and handsfree IC
TEA1098
Logic inputs
Table 2
Selection of transmit and receive channels for 5 different application modes
LOGIC INPUTS
FEATURES
APPLICATION EXAMPLES
PD
HFC
MUTE
0
X
X
1
0
0
DTMF to LN; DTMF to RECO; QR and MICS
are active
DTMF dialling in handset mode
1
0
1
MICS to LN; IR to RECO; QR and MICS are
active
handset conversation
1
1
0
DTMF to LN; DTMF to RECO; HFRX to LSAO;
QR and MICS are active
DTMF dialling in handsfree
1
1
1
TXIN to TXOUT; HFTX to LN; IR to RECO;
HFRX to LSAO; MICS is active
handsfree conversation mode
flash, DC dialling
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); all DC levels are referenced to GND.
SYMBOL
VLN
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
positive continuous line voltage
−0.4
+12
V
repetitive line voltage during switch-on or line
interruption
−0.4
+13.2
V
maximum voltage on pins REG, SLPE, IR and AGC
−0.4
VLN + 0.4 V
maximum voltage on all other pins except VDD
−0.4
VBB + 0.4 V
Iline
maximum line current
−
130
mA
Ptot
total power dissipation
TEA1098TV (see Fig.15)
−
400
mW
TEA1098H (see Fig.16)
−
720
mW
Vn(max)
Tamb = 75 °C
−
−
Tstg
IC storage temperature
−40
+125
°C
Tamb
ambient temperature
−25
+75
°C
Tj
junction temperature
−
125
°C
TEA1098UH; note 1
Note
1. Mostly dependent on the maximum required ambient temperature, on the voltage between LN and SLPE and on the
thermal resistance between die ambient temperature. This thermal resistance depends on the application board
layout and on the materials used. Figure 17 shows the safe operating area versus this thermal resistance for ambient
temperature Tamb = 75 °C
1999 Oct 14
18
Philips Semiconductors
Product specification
Speech and handsfree IC
TEA1098
FCA028
160
Iline
(mA)
handbook, full pagewidth
(1)
120
(2)
(3)
(4)
80
(5)
(6)
40
0
3.5
5.5
7.5
11.5
9.5
VSLPE (V)
13.5
LINE
Tamb (°C)
Ptot (mW)
(1)
25
800
(2)
35
720
(3)
45
640
(4)
55
560
(5)
65
480
(6)
75
400
Fig.15 Safe operating area (TEA1098TV).
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
UNIT
in free air
TEA1098TV
115
K/W
TEA1098H
63
K/W
TEA1098UH
1999 Oct 14
VALUE
tbf by customer
in application
19
Philips Semiconductors
Product specification
Speech and handsfree IC
TEA1098
FCA029
160
handbook, full pagewidth
Iline
(mA)
(1)
(2)
120
(3)
(4)
80
(5)
40
0
3
4
5
6
7
8
9
10
20
12
LINE
Tamb (°C)
Ptot (mW)
(1)
35
1304
(2)
45
1158
(3)
55
1012
(4)
65
866
(5)
75
720
Fig.16 Safe operating area (TEA1098H).
1999 Oct 14
11
VSLPE (V)
Philips Semiconductors
Product specification
Speech and handsfree IC
TEA1098
FCA079
160
handbook, full pagewidth
Iline
(mA)
(1)
120
(2)
(3)
80
(4)
(5)
(6)
(7)
40
0
2
4
6
8
10
LINE
Rth(j-a) (K/W)
(1)
40
(2)
50
(3)
60
(4)
75
(5)
90
(6)
105
(7)
130
Fig.17 Safe operating area at Tamb = 75 °C (TEA1098UH).
1999 Oct 14
21
12
VSLPE (V)
Philips Semiconductors
Product specification
Speech and handsfree IC
TEA1098
CHARACTERISTICS
Iline = 15 mA; RSLPE = 20 Ω; Zline = 600 Ω; f = 1 kHz; Tamb = 25 °C for TEA1098H and TEA1098TV; Tj = 25 °C for
TEA1098UH; AGC pin connected to LN; PD = HIGH; HFC = LOW; MUTE = HIGH; measured according to test circuits;
all DC levels are referenced to GND; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies
LINE INTERFACE AND INTERNAL SUPPLY (PINS LN, SLPE, REG AND VBB)
VSLPE
stabilized voltage between
SLPE and GND
Iline = 15 mA
3.4
3.7
4
V
Iline = 70 mA
5.7
6.1
6.5
V
VBB
regulated supply voltage for
internal circuitry
Iline = 15 mA
2.75
3.0
3.25
V
Iline = 70 mA
4.9
5.3
5.7
V
Iline
line current for voltage increase
start current
−
18
−
mA
stop current
−
45
−
mA
∆VSLPE(T)
stabilized voltage variation with Tamb = −25 to +75 °C
temperature referenced to 25 °C
−
±60
−
mV
∆VBB(T)
regulated voltage variation with Tamb = −25 to +75 °C
temperature referenced to 25 °C
−
±30
−
mV
IBB
current available on pin VBB
−
11
−
mA
VLN
line voltage
in speech mode
in handsfree mode
−
9
−
mA
Iline = 1 mA
−
1.55
−
V
Iline = 4 mA
−
2.35
−
V
Iline = 15 mA
3.7
4.0
4.3
V
Iline = 130 mA
−
8.7
9.5
V
3.1
3.35
3.6
V
−
VBB − 0.25 −
V
SUPPLY FOR PERIPHERALS (PIN VDD)
VDD
regulated supply voltage on VDD VBB > 3.35 V + 0.25 V
(typ.)
otherwise
∆VDD(T)
regulated voltage variation with Tamb = −25 to +75 °C;
temperature referenced to 25 °C VBB > 3.35 V + 0.25 V
(typ.)
−
±30
−
mV
IDD
current consumption on VDD
in trickle mode;
Iline = 0 mA; VDD = 1.5 V;
VBB discharging
−
15
150
nA
VDD > 3.35 V
60
100
−
µA
VDD = 3.35 V
−
−3
−
mA
IDD(o)
current available for peripherals
SUPPLY FOR MICROPHONE (PIN MICS)
VMICS
supply voltage for a microphone
−
2.0
−
V
IMICS
current available on MICS
−
−
−1
mA
V
POWER-DOWN INPUT (PIN
PD)
VIL
LOW-level input voltage
−0.4
−
+0.3
VIH
HIGH-level input voltage
1.8
−
VBB + 0.4 V
IPD
input current
−
−3
−6
1999 Oct 14
22
µA
Philips Semiconductors
Product specification
Speech and handsfree IC
SYMBOL
PARAMETER
TEA1098
CONDITIONS
MIN.
TYP.
MAX.
UNIT
−
460
−
µA
differential between pins
MIC+ and MIC−
−
70
−
kΩ
single-ended between pins
MIC+/MIC− and GNDTX
−
35
−
kΩ
Zi(IR)
input impedance between pins
IR and LN
−
20
−
kΩ
Zi(DTMF)
input impedance between pins
DTMF and GND
−
20
−
kΩ
Zi(TXIN)
input impedance between pins
TXIN and GNDTX
−
20
−
kΩ
Zi(HFTX)
input impedance between pins
HFTX and GND
−
20
−
kΩ
Zi(HFRX)
input impedance between pins
HFRX and GND
−
20
−
kΩ
IBB(PD)
current consumption on VBB
during power-down phase
PD = LOW
Preamplifier inputs (pins MIC+, MIC−, IR, DTMF, TXIN, HFTX and HFRX)
Zi(MIC)
input impedance
TX amplifiers
TX HANDSET MICROPHONE AMPLIFIER (PINS MIC+, MIC− AND LN)
Gv(MIC-LN)
voltage gain from pin
MIC+/MIC− to LN
VMIC = 5 mV (RMS)
43.3
44.3
45.3
dB
∆Gv(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
−
±0.25
−
dB
∆Gv(T)
gain variation with temperature
referenced to 25 °C
Tamb = −25 to +75 °C
−
±0.25
−
dB
CMRR
common mode rejection ratio
−
80
−
dB
THD
total harmonic distortion at LN
VLN = 1.4 V (RMS)
−
−
2
%
Iline = 4 mA;
VLN = 0.12 V (RMS)
−
−
10
%
Vno(LN)
noise output voltage at pin LN;
pins MIC+/MIC− shorted
through 200 Ω
psophometrically weighted −
(p53 curve)
−77.5
−
dBmp
∆Gv(mute)
gain reduction if not activated
see Table 2
60
80
−
dB
DTMF AMPLIFIER (PINS DTMF, LN AND RECO)
Gv(DTMF-LN)
voltage gain from pin
DTMF to LN
VDTMF = 50 mV (RMS)
24.35 25.35
26.35
dB
∆Gv(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
−
±0.25
−
dB
∆Gv(T)
gain variation with temperature
referenced to 25 °C
Tamb = −25 to +75 °C
−
±0.25
−
dB
∆Gv(mute)
gain reduction if not activated
see Table 2
60
80
−
dB
1999 Oct 14
23
Philips Semiconductors
Product specification
Speech and handsfree IC
SYMBOL
Gv(DTMF-RECO)
PARAMETER
voltage gain from pin DTMF to
RECO
TEA1098
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDTMF = 50 mV (RMS)
−
−16.5
−
dB
TX AMPLIFIER USING HFTX (PINS HFTX AND LN)
Gv(HFTX-LN)
voltage gain from pin HFTX to
LN
VHFTX = 15 mV (RMS)
33.5
34.7
35.9
dB
∆Gv(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
−
±0.25
−
dB
∆Gv(T)
gain variation with temperature
referenced to 25 °C
Tamb = −25 to +75 °C
−
±0.25
−
dB
THD
total harmonic distortion at LN
VLN = 1.4 V (RMS)
−
−
2
%
VHFTX(rms)
maximum input voltage at HFTX Iline = 70 mA; THD = 2%
(RMS value)
−
95
−
mV
Vno(LN)
noise output voltage at pin LN;
pin HFTX shorted to GND
through 200 Ω in series with
10 µF
psophometrically weighted −
(p53 curve)
−77.5
−
dBmp
∆Gv(mute)
gain reduction if not activated
see Table 2
60
80
−
dB
RX amplifiers
RX AMPLIFIERS USING IR (PINS IR AND RECO)
Gv(IR-RECO)
voltage gain from pin IR
(referenced to LN) to RECO
VIR = 8 mV (RMS)
28.7
29.7
30.7
dB
∆Gv(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
−
±0.25
−
dB
∆Gv(T)
gain variation with temperature
referenced to 25 °C
Tamb = −25 to +75 °C
−
±0.3
−
dB
VIR(rms)(max)
maximum input voltage on IR
(referenced to LN) (RMS value)
Iline = 70 mA; THD = 2%
−
50
−
mV
THD = 2%
0.75
0.9
−
V
VRECO(rms)(max) maximum output voltage on
RECO (RMS value)
Vno(RECO)(rms)
noise output voltage at pin
RECO; pin IR is an open-circuit
(RMS value)
psophometrically weighted −
(p53 curve)
−88
−
dBVp
∆Gv(mute)
gain reduction if not activated
see Table 2
60
80
−
dB
−3
−
+15
dB
0.75
0.9
−
V
−88
−
dBVp
RX EARPIECE AMPLIFIER (PINS GARX AND QR)
∆Gv(RECO-QR)
gain voltage range between pins
RECO and QR
VQR(rms)(max)
maximum output voltage on QR
(RMS value)
sine wave drive;
RL = 150 Ω; THD < 2%
Vno(QR)(rms)
noise output voltage at pin QR;
pin IR is an open-circuit
(RMS value)
Gv(QR) = 0 dB;
−
psophometrically weighted
(p53 curve)
1999 Oct 14
24
Philips Semiconductors
Product specification
Speech and handsfree IC
SYMBOL
PARAMETER
TEA1098
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Automatic Gain Control (pin AGC)
∆Gv(trx)
gain control range for transmit
and receive amplifiers affected
by the AGC; with respect to
Iline = 15 mA
Iline = 70 mA; Gv(MIC-LN);
Gv(IR-RECO)
5.45
Iline = 70 mA for Gv(HFTX-LN) 5.8
6.45
7.45
dB
6.8
7.8
dB
Istart
highest line current for maximum
gain
−
23
−
mA
Istop
lowest line current for maximum
gain
−
57
−
mA
−0.4
−
+0.3
V
1.8
−
VBB + 0.4 V
for pin HFC
−
3
6
µA
for pin MUTE
−
−3
−12
µA
12.7
15.2
17.7
dB
−15
−
+16
dB
Logic inputs (pins HFC and MUTE)
VIL
LOW-level input voltage
VIH
HIGH-level input voltage
Ii
input current
VBB = 3.0 V
Handsfree mode (HFC = HIGH)
HF MICROPHONE AMPLIFIER (PINS TXIN, TXOUT AND GATX)
Gv(TXIN-TXOUT)
voltage gain from pin TXIN to
TXOUT
VTXIN = 3 mV (RMS);
RGATX = 30.1 kΩ
∆Gv
voltage gain adjustment with
RGATX
∆Gv(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
−
±0.1
−
dB
∆Gv(T)
gain variation with temperature
referenced to 25 °C
Tamb = −25 to +75 °C
−
±0.15
−
dB
Vno(TXOUT)(rms)
noise output voltage at pin
TXOUT; pin TXIN is shorted
through 200 Ω in series with
10 µF to GNDTX (RMS value)
psophometrically weighted −
(p53 curve)
−101
−
dBmp
∆Gv(mute)
gain reduction if not activated
see Table 2
60
80
−
dB
25.5
28
30.5
dB
−28
−
+7
dB
HF LOUDSPEAKER AMPLIFIER (PINS HFRX, LSAO, GALS AND VOL)
Gv(HFRX-LSAO)
voltage gain from pin HFRX to
LSAO
∆Gv
voltage gain adjustment with
RGALS
∆Gv(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
−
±0.3
−
dB
∆Gv(T)
gain variation with temperature
referenced to 25 °C
Tamb = −25 to +75 °C
−
±0.3
−
dB
∆Gv(vol)
voltage gain variation related to
∆RVOL = 1.9 kW
when total attenuation
does not exceed the
switching range
−
−3
−
dB
1999 Oct 14
VHFRX = 30 mV (RMS);
RGALS = 255 kΩ;
Iline = 70 mA
25
Philips Semiconductors
Product specification
Speech and handsfree IC
SYMBOL
PARAMETER
TEA1098
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VHFRX(rms)(max) maximum input voltage at pin
HFRX (RMS value)
Iline = 70 mA;
RGALS = 33 kΩ; for 2%
THD in the input stage
−
580
−
mV
Vno(LSAO)(rms)
noise output voltage at pin
LSAO; pin HFRX is open-circuit
(RMS value)
psophometrically weighted −
(p53 curve)
−79
−
dBVp
∆Gv(mute)
gain reduction if not activated
see Table 2
60
80
−
dB
VLSAO(rms)
output voltage (RMS value)
IBB = 0 mA; IDD = 1 mA
Iline = 18 mA
−
0.9
−
V
Iline = 30 mA
−
1.3
−
V
Iline > 50 mA
−
1.6
−
V
150
300
−
mA
when VHFRX jumps from
20 to 20 mV + 10 dB
−
−
5
ms
when VBB jumps below
VBB(th)
−
1
−
ms
ILSAO(max)
maximum output current at pin
LSAO (peak value)
DYNAMIC LIMITER (PINS LSAO AND DLC)
tatt
attack time
trel
release time
when VHFRX jumps from
20 mV + 10 dB to 20 mV
−
100
−
ms
THD
total harmonic distortion
VHFRX = 20 mV + 10 dB;
t > tatt
−
1
2
%
VBB(th)
VBB limiter threshold
−
2.7
−
V
MUTE RECEIVE (PIN DLC)
VDLC(th)
threshold voltage required on
pin DLC to obtain mute receive
condition
−0.4
−
+0.2
V
IDLC(th)
threshold current sourced by pin VDLC = 0.2 V
DLC in mute receive condition
−
100
−
µA
∆Gvrx(mute)
voltage gain reduction in mute
receive condition
60
80
−
dB
VDLC = 0.2 V
TX AND RX ENVELOPE AND NOISE DETECTORS (PINS TSEN, TENV, TNOI, RSEN, RENV AND RNOI)
Preamplifiers
Gv(TSEN)
voltage gain from pin
TXIN to TSEN
−
40
−
dB
Gv(RSEN)
voltage gain from pin
HFRX to RSEN
−
0
−
dB
−
18
−
mV
Logarithmic compressor and sensitivity adjustment
∆Vdet(TSEN)
1999 Oct 14
sensitivity detection on pin
ITSEN = 0.8 to 160 µA
TSEN; voltage change on pin
TENV when doubling the current
from TSEN
26
Philips Semiconductors
Product specification
Speech and handsfree IC
SYMBOL
∆Vdet(RSEN)
PARAMETER
sensitivity detection on pin
RSEN; voltage change on pin
RENV when doubling the
current from RSEN
TEA1098
CONDITIONS
IRSEN = 0.8 to 160 µA
MIN.
TYP.
MAX.
UNIT
−
18
−
mV
120
−
µA
Signal envelope detectors
Isource(ENV)
maximum current sourced from
pin TENV or RENV
−
Isink(ENV)
maximum current sunk by pin
TENV or RENV
−1.25 −1
−0.75
µA
∆VENV
voltage difference between pins
RENV and TENV
−
±3
−
mV
when 10 µA is sourced
from both RSEN and
TSEN; signal detectors
tracking; note 1
Noise envelope detectors
Isource(NOI)
maximum current sourced from
pin TNOI or RNOI
0.75
1
1.25
µA
Isink(NOI)
maximum current sunk by pin
TNOI or RNOI
−
−120
−
µA
∆VNOI
voltage difference between pins
RNOI and TNOI
when 5 µA is sourced from −
both RSEN and TSEN;
noise detectors tracking;
note 1
±3
−
mV
RRSEN = 10 kΩ
−
25
−
mV
RTSEN = 10 kΩ
−
0.75
−
mV
DIAL TONE DETECTOR
VHFRX(th)(rms)
threshold level at pin HFRX
(RMS value)
TX LEVEL LIMITER
VTXIN(th)(rms)
threshold level at pin TXIN
(RMS value)
DECISION LOGIC (PINS IDT AND SWT)
Signal recognition
∆VSrx(th)
threshold voltage between pins
RENV and RNOI to switch-over
from receive to Idle mode
VHFRX < VHFRX(th); note 2
−
13
−
mV
∆VStx(th)
threshold voltage between pins
TENV and TNOI to switch-over
from transmit to Idle mode
VTXIN < VTXIN(th); note 2
−
13
−
mV
10
12.5
µA
Switch-over
Isource(SWT)
current sourced from pin SWT
when switching to receive mode
7.5
Isink(SWT)
current sunk by pin SWT when
switching to transmit mode
−12.5 −10
−7.5
µA
Iidle(SWT)
current sourced from pin SWT in
Idle mode
−
−
µA
1999 Oct 14
27
0
Philips Semiconductors
Product specification
Speech and handsfree IC
SYMBOL
TEA1098
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VOICE SWITCH (PINS STAB AND SWR)
−
40
−
dB
−40
−
+12
dB
voltage gain variation from
transmit or receive mode to Idle
mode
−
20
−
dB
gain tracking (Gvtx + Gvrx) during
switching, referenced to Idle
mode
−
0.5
−
dB
SWRA
switching range
∆SWRA
switching range adjustment
∆Gv
Gtr
with RSWR referenced to
365 kΩ
Notes
1. Corresponds to ±1 dB tracking.
2. Corresponds to 4.3 dB noise/speech recognition level.
1999 Oct 14
28
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Cemc
SLPE
10 nF
17 (14)
Cexch
CIR
Cimp
100 µF
100 µF
IR
REG
19 (16)
CVDD
CVBB
470 µF
AGC
47 µF
VBB
LN
21 (18) 18 (15)
VDD
13 (10)
22 (19)
20 (17)
100 nF
(38) 1
(37) 40
CMICS
4.7 µF
MICS
MIC+
VMIC
RMIC
200 Ω
MIC−
(39) 2
PD
HFC
MUTE
23 (20)
34 (31)
(33) 36
(34) 37
33 (30)
QR
CGAR
100 pF
GARX
HFTX
TXOUT
TEA1098
(35) 38
29
CTXIN
(1) 5
TXIN
HFRX
CQR
4.7 µF
DTMF
VHFRX
100 nF
30 (27)
(11) 14
GALS
31 (28)
100 nF
VTXIN
150 Ω
100 nF
CHFRX
30.1 kΩ
GATX
RECO
29 (26)
RGATX
CDTMF
RQR
Crxe
100 nF
VHFTX
1 nF
100 kΩ
39 (36)
100 kΩ
CGARS
Re1
CHFTX
Re2
Philips Semiconductors
Vd = 10 V
4.7 µF
20 Ω
Speech and handsfree IC
Dz
CREG
RSLPE
VIR
TEST AND APPLICATION INFORMATION
Zimp
620 Ω
i = 15 mA
J_line
book, full pagewidth
1999 Oct 14
Zexch
600 Ω
(12) 15
35 (32)
RGALS
CGALS
255 kΩ
150 pF
LSAO
100 nF
TSEN
VDTMF
(6) 10
8 (4)
(7) 11
TENV
7 (3)
TNOI
RTSEN
10 kΩ
6 (2)
16 (13)
GND
CTENV
470 nF
CTNOI
4.7 µF
32 (29)
24 (21)
GNDTX
25 (22)
STAB
RSTAB
3.65 kΩ
26 (23)
SWR
RSWR
365 kΩ
12 (8)
VOL
RVOL
0 to
22 kΩ
(25) 28
27 (24)
DLC
CDLC
470 nF
RENV
RNOI
CLSAO
220 µF
IDT
SWT
CSWT
220 nF
RIDT
2.2 MΩ
CRNOI
4.7 µF
RRSEN
10 kΩ
RLSAO
CRENV
470 nF
CRSEN
100 nF
50 Ω
Pin numbers in parenthesis apply to the TEA1098H. Pin numbers not in parenthesis apply to the TEA1098TV.
Fig.18 Test configuration.
TEA1098
MGL440
Product specification
CTSEN
100 nF
(5) 9
RSEN
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Vd =
10 V
Cimp
22 µF
Rast2
3.92 kΩ
RSLPE
20 Ω
392 Ω
CIR
handset
micro
15 kΩ
Ctx1
Rtx1
Rtx3
8.2 kΩ
15 kΩ
CHFTX
100 nF
30
RGATX
30.1 kΩ
RBMICS
2 kΩ
CMICB
22 nF
CTXIN
100 nF
AGC
21 (18)
VBB
LN
18 (15)
VDD
13 (10)
22 (19)
(38) 1
20 (17)
(37) 40
MIC+
22 nF
from
MICS
REG
19 (16)
(39) 2
23 (20)
CMICS
10 µF
Rtx2
22 nF
RMICM
1 kΩ
handsfree
micro
IR
MICS
CMICH
33 nF
B
SLPE
17 (14)
CVDD
47 µF
100 nF
MICS
A
CVBB
470 µF
Rast3
Rast1
130 kΩ
RMICP
1 kΩ Ctx2
CREG
4.7 µF
34 (31)
MIC−
HFTX
TXOUT
DTMF
TNOI
(35) 38
39 (36)
RECO
TEA1098
Re2
100 kΩ
30 (27)
(11) 14
31 (28)
(12) 15
35 (32)
8 (4)
(7) 11
7 (3)
(5) 9
6 (2)
(25) 28
16 (13)
GND
CTNOI
4.7 µF
32 (29)
24 (21)
GNDTX
25 (22)
STAB
RSTAB
3.65 kΩ
26 (23)
SWR
RSWR
365 kΩ
12 (8)
VOL
RVOL
0 to
22 kΩ
HFRX
CDLC
470 nF
Crxe
100 nF
GALS
RGALS
255 kΩ
LSAO
CGALS
150 pF
CLSAO
220 µF
RSEN
RENV
RNOI
IDT
27 (24)
DLC
CGARS
1 nF
CHFRX
100 nF
29 (26)
RTSEN
10 kΩ
CTENV
470 nF
CGAR
100 pF
Re1
100 kΩ
(6) 10
TENV
CTSEN
100 nF
CQR
10 µF
QR
33 (30)
(1) 5
GATX
TSEN
D4
MUTE
GARX
100 nF
D1
from
microcontroller
HFC
(34) 37
TXIN
CDTMF
(33) 36
PD
Philips Semiconductors
D3
Cemc
10 nF
Rbal1
130 Ω
Speech and handsfree IC
D2
Dz
Zimp
620 Ω
dbook, full pagewidth
1999 Oct 14
Cbal
220 nF
Rbal2
820 Ω
SWT
CSWT
220 nF
RIDT
2.2 MΩ
RRSEN
10 kΩ
CRNOI
4.7 µF
CRENV
470 nF
CRSEN
100 nF
Fig.19 Basic application diagram.
TEA1098
Pin numbers in parenthesis apply to the TEA1098H. Pin numbers not in parenthesis apply to the TEA1098TV.
Product specification
MGL316
Philips Semiconductors
Product specification
Speech and handsfree IC
TEA1098
BONDING PAD LOCATIONS FOR TEA1098UH
COORDINATES
SYMBOL
All x/y coordinates represent the position of the centre of
the pad (in µm) with respect to the origin (x/y = 0/0) of the
die (see Fig.20). The size of all pads is 80 µm2.
X
COORDINATES
SYMBOL
PAD
X
Y
PAD
Y
STAB
23
2586.5
101.5
SWR
24
2778.8
101.5
VOL
25
2969
144
SWT
26
2969
379.8
HFRX
1
81.5
3597.5
IDT
27
2969
681.5
TNOI
2
81.5
3402.2
TXOUT
28
2969
1086
TENV
3
81.5
3187
GATX
29
2969
1342.2
TSEN
4
81.5
2964.2
TXIN
30
2969
1961.2
RNOI
5
81.5
2746
GNDTX
31
2969
2152
RSEN
6
81.5
2511.8
GNDTX
32
2968.8
2344.2
RENV
7
81.8
2282.8
MIC−
33
2968.8
2522.8
DLC
8
81.5
1972.8
MIC+
34
2968.5
2837.2
n.c.
9
81.5
1499.8
DTMF
35
2968.5
3062.5
VBB
10
81.5
1023
QR
36
2968.5
3499.8
GALS
11
81.5
589.5
GARX
37
2890
3712.8
LSAO
12
129.2
100.8
RECO
38
2572
3712.8
n.c.
13
345.2
100.8
HFTX
39
2290.8
3712.8
GND
14
805.5
100.8
HFC
40
2051.8
3712.8
GND
15
1069
100.8
PD
41
1798.2
3712.8
SLPE
16
1299.2
100.8
MUTE
42
1544.8
3712.8
LN
17
1488.5
100.8
n.c.
43
1296.8
3712.8
REG
18
1648.8
100.8
n.c.
44
861
3712.8
IR
19
1832.8
100.8
n.c.
45
657.2
3712.8
AGC
20
2028
100.8
n.c.
46
459.5
3712.8
VDD
21
2195
101
n.c.
47
255
3712.8
MICS
22
2393.5
101.5
1999 Oct 14
31
Philips Semiconductors
Product specification
Speech and handsfree IC
TEA1098
47 46 45 44
handbook, halfpage
43 42 41 40 39
38
37
1
36
2
3
35
4
34
5
6
33
TEA1098UH
32
31
8
30
R6621R
7
Die Identifier
9
29
28
10
27
11
26
25
x
0
12 13
0
14 15 16 17 18 19 20 21 22 23 24
y
FCA078
Fig.20 TEA1098UH bonding pad locations.
1999 Oct 14
32
Philips Semiconductors
Product specification
Speech and handsfree IC
TEA1098
PACKAGE OUTLINES
VSO40: plastic very small outline package; 40 leads
SOT158-1
D
E
A
X
c
y
HE
v M A
Z
40
21
Q
A2
A
(A 3)
A1
θ
pin 1 index
Lp
L
1
detail X
20
w M
bp
e
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (2)
e
HE
L
Lp
Q
v
w
y
Z (1)
mm
2.70
0.3
0.1
2.45
2.25
0.25
0.42
0.30
0.22
0.14
15.6
15.2
7.6
7.5
0.762
12.3
11.8
2.25
1.7
1.5
1.15
1.05
0.2
0.1
0.1
0.6
0.3
0.012 0.096
0.017 0.0087 0.61
0.010
0.004 0.089
0.012 0.0055 0.60
0.30
0.29
0.03
0.48
0.46
0.067
0.089
0.059
inches
0.11
0.045
0.024
0.008 0.004 0.004
0.041
0.012
θ
Notes
1. Plastic or metal protrusions of 0.4 mm maximum per side are not included.
2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
92-11-17
95-01-24
SOT158-1
1999 Oct 14
EUROPEAN
PROJECTION
33
o
7
0o
Philips Semiconductors
Product specification
Speech and handsfree IC
TEA1098
QFP44: plastic quad flat package; 44 leads (lead length 1.3 mm); body 10 x 10 x 1.75 mm
SOT307-2
c
y
X
A
33
23
34
22
ZE
e
E HE
A A2
wM
(A 3)
A1
θ
bp
Lp
pin 1 index
L
12
44
1
detail X
11
wM
bp
e
ZD
v M A
D
B
HD
v M B
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HD
HE
L
Lp
v
w
y
mm
2.10
0.25
0.05
1.85
1.65
0.25
0.40
0.20
0.25
0.14
10.1
9.9
10.1
9.9
0.8
12.9
12.3
12.9
12.3
1.3
0.95
0.55
0.15
0.15
0.1
Z D (1) Z E (1)
1.2
0.8
1.2
0.8
θ
o
10
0o
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
95-02-04
97-08-01
SOT307-2
1999 Oct 14
EUROPEAN
PROJECTION
34
Philips Semiconductors
Product specification
Speech and handsfree IC
TEA1098
• For packages with leads on two sides and a pitch (e):
SOLDERING
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
Introduction to soldering surface mount packages
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering is not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.
The footprint must incorporate solder thieves at the
downstream end.
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
Reflow soldering
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Manual soldering
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
Wave soldering
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
1999 Oct 14
35
Philips Semiconductors
Product specification
Speech and handsfree IC
TEA1098
Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
PACKAGE
REFLOW(1)
WAVE
BGA, LFBGA, SQFP, TFBGA
not suitable
suitable(1)
HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, SMS
not
PLCC(3), SO, SOJ
suitable
LQFP, QFP, TQFP
SSOP, TSSOP, VSO
suitable
suitable
suitable
not
recommended(3)(4)
suitable
not
recommended(5)
suitable
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
1999 Oct 14
36
Philips Semiconductors
Product specification
Speech and handsfree IC
TEA1098
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
BARE DIE DISCLAIMER
All die are tested and are guaranteed to comply with all data sheet limits up to the point of wafer sawing for a period of
ninety (90) days from the date of Philips' delivery. If there are data sheet limits not guaranteed, these will be separately
indicated in the data sheet. There is no post waffle pack testing performed on individual die. Although the most modern
processes are utilized for wafer sawing and die pick and place into waffle pack carriers, Philips Semiconductors has no
control of third party procedures in the handling, packing or assembly of the die. Accordingly, Philips Semiconductors
assumes no liability for device functionality or performance of the die or systems after handling, packing or assembly of
the die. It is the responsibility of the customer to test and qualify their application in which the die is used.
1999 Oct 14
37
Philips Semiconductors
Product specification
Speech and handsfree IC
TEA1098
NOTES
1999 Oct 14
38
Philips Semiconductors
Product specification
Speech and handsfree IC
TEA1098
NOTES
1999 Oct 14
39
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SCA 68
© Philips Electronics N.V. 1999
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Printed in The Netherlands
465002/04/pp40
Date of release: 1999
Oct 14
Document order number:
9397 750 06403