SANKEN TF321M

TO-220 3A Thyristor
TF321M / TF341M / TF361M
■ Features
External Dimensions
(Unit: mm)
12.0 min
●Gate trigger current: IGT=10mA max
2.1max
φ 3.75±0.1
a
b
±0.15
1.35
4.0 max
●Average on-state current: IT(AV)=3A
5.0max
10.4max
16.7max
3.0±0.2
8.8±0.2
●Repetitive peak off-state voltage: VDRM=200, 400, 600V
+0.2
0.65 – 0.1
±0.1
2.5
±
1.7 0.2
±0.1
2.5
(1). Cathode (K)
(2). Anode (A)
(3). Gate (G)
(1) (2) (3)
a. Part Number
b. Lot Number
Weight: Approx. 2.6g
■Absolute Maximum Ratings
Parameter
Symbol
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Ratings
Unit
TF321M
TF341M
TF361M
VDRM
200
400
600
V
VRRM
200
400
600
V
Non-repetitive peak off-state voltage
VDSM
300
500
700
V
Non-repetitive peak reverse voltage
VRSM
300
500
700
V
Average on-state current
RMS on-state current
IT(AV)
3.0
A
IT(RMS)
4.7
A
Surge on-state current
ITSM
60
A
Peak forward gate current
IFGM
2.0
A
Peak forward gate voltage
VFGM
10
V
Peak reverse gate voltage
VRGM
5.0
Peak gate power loss
PGM
5.0
PG(AV)
0.5
W
Junction temperature
Tj
–40 to +125
°C
Storage temperature
Tstg
–40 to +125
°C
Average gate power loss
Conditions
Tj= –40 to +125°C, RGK =1kΩ
50Hz Half-cycle sinewave, Continuous current, Tc=102°C
50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125°C
f
50Hz, duty
V
f
50Hz
W
f
50Hz, duty
10%
10%
■Electrical Characteristics
Parameter
Ratings
min
typ
max
Unit
Off-state current
IDRM
2.0
mA
Reverse current
IRRM
2.0
mA
On-state voltage
VTM
1.4
V
Gate trigger voltage
VGT
1.5
V
Gate trigger current
IGT
10
mA
Gate non-trigger voltage
VGD
Holding current
Critical rate-of-rise of off-state voltage
Turn-off time
Thermal resistance
6
Symbol
2.0
V
0.1
IH
4.0
mA
dv/dt
50
V/µS
tq
30
Rth
µS
3.0
°C/W
Conditions
Tj=125°C, VD=VDRM(VRRM), RGK=1kΩ
TC=25°C, ITM=5A
VD=6V, RL=10Ω, TC=25°C
VD=1/2 × VDRM, Tj=125°C, RGK=1kΩ
RGK=1kΩ, Tj=25°C
VD=1/2 × VDRM, Tj=125°C, RGK=1kΩ, CGK=0.033µF
Tc=25°C
Junction to case
TF321M / TF341M / TF361M
ITSM Ratings
1
40
20
6
2
1
Tj = –40°C
vGF (V)
60
8
= 5W
Tj = 25°C
5
10
10 ms
1cycle
80
P GM
10
ITSM
Gate voltage
Tj =125°C
12
Initial junction temperature
Tj=125°C
Tj = –20°C
Surge on-state current ITSM (A)
iT (A)
50
On-state current
Gate Characteristics
100
Tj =25°C
100
Gate trigger voltage VGT (V)
vT – iT Characteristics (max)
0
0
10
20
30
Gate trigger current IGT (mA)
4
2 See graph at the upper right
0.5
3.0
0°
DC
0°
18
Case temperature TC (°C)
4
0
0
90°
180°
IH temperature Characteristics
(Typical)
)
50%
tw
TC =– 40°C
–20°C
25°C
75°C
125°C
10
trigger current
igt (Gate
)
at Ta and tw
1
0.1
10 2
10 3
Pulse width
t w (µs)
10 4
1
10 2
10 3
Pulse width
t w (µs)
10
(Typical)
0.2
0
–40
0
25
50
75
100
Junction temperature Tj (°C)
125
50
75
100
125
10
rth (°C/W)
5
4
3
2
1
0
–40
25
Transient thermal resistance
Characteristics (Junction to case)
Transient thermal resistance
Gate trigger current IGT (mA)
Gate trigger voltage VGT (V)
0.4
(VD=6V, RL=10Ω)
6
0
Junction temperature Tj (°C)
IGT temperature Characteristics
0.6
5
0
–40
10 4
(Typical)
0.8
10
0.1
0.05
0.5 1
VGT temperature Characteristics
(VD=6V, RL=10Ω)
(RGK=1kΩ)
15
igt
(
(
TC =– 40°C
–20°C
25°C
75°C
125°C
1.0
5
Holding current IH (mA)
tw
10
gate trigger
IGT DC
current at 25°C
)
gate trigger
VGT DC
voltage at 25°C
trigger voltage
vgt ( Gate
)
at Ta and tw
30
50%
10
1
2
3
4
Average on-state current IT(AV) (A)
Pulse trigger temperature
Characteristics igt (Typical)
vgt
0.05
0.5 1
0°
25
Average on-state current IT(AV) (A)
30
3
50
5
Pulse trigger temperature
Characteristics vgt (Typical)
120°
150°
75
0
3
2
iGF (A)
100
1
2
180° θ
60°
0°
15
°
90
60
30
°
θ=
2
1
1
Gate current
50Hz Half-cycle sinewave
θ: Conduction angle
125
°
4
0
0
100
IT(AV) – Tc Ratings
12
Average on-state power PT(AV) (W)
0° θ 180°
0
50
150
50Hz Half-cycle sinewave
θ: Conduction angle
3
10
Number of cycle
IT(AV) – PT(AV) Characteristics
5
5
vT ( V )
On-state voltage
6
0
1
4.0
DC
2.0
θ=30°
0.3
1.0
0
25
50
75
100
Junction temperature Tj (°C)
125
1
0.1
1
10
10 2
10 3
10 4
t, Time (ms)
7