MICROWAVE POWER GaAs FET TIM1414-18L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER BROAD BAND INTERNALLY MATCHED FET P1dB=42.5dBm at 14.0GHz to 14.5GHz HIGH GAIN HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 14.0GHz to 14.5GHz LOW INTERMODULATION DISTORTION IM3(Min.)=−25dBc at Po=36dBm Single Carrier Level RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain SYMBOL CONDITIONS P1dB UNIT MIN. TYP. MAX. dBm 42.0 42.5 ⎯ dB 5.0 6.0 ⎯ VDS= 9V Compression Point Power Gain at 1dB Gain ( Ta= 25°C ) IDSQ≅4.4A G1dB f = 14.0 to 14.5GHz Compression Point Drain Current IDS1 A ⎯ 5.5 6.0 Power Added Efficiency ηadd % ⎯ 28 ⎯ 3rd Order Intermodulation IM3 dBc -25 ⎯ ⎯ Distortion Drain Current Channel Temperature Rise Two-Tone Test Po= 36.0dBm IDS2 (Single Carrier Level) A ⎯ 5.5 6.0 ΔTch (VDS X IDS + Pin – P1dB) °C ⎯ ⎯ 100 UNIT MIN. mS ⎯ 4500 ⎯ V -0.7 -2.8 -4.5 A ⎯ 10.0 ⎯ V -5 ⎯ ⎯ °C/W ⎯ 1.8 2.3 X Rth(c-c) Recommended gate resistance(Rg) : Rg= 100 Ω(MAX.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage SYMBOL gm VGSoff Saturated Drain Current IDSS Gate-Source Breakdown Voltage VGSO Thermal Resistance ( Ta= 25°C ) CONDITIONS VDS= 3V IDS= 4.8A VDS= 3V IDS= 145mA VDS= 3V VGS= 0V IGS= -145μA Rth(c-c) Channel to Case TYP. MAX. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jun. 2006 TIM1414-18L ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 11.5 Total Power Dissipation (Tc= 25 °C) PT W 65 Channel Temperature Tch °C 175 Storage Tstg °C -65 to +175 PACKAGE OUTLINE (2-11C1B) Unit in mm (1) Gate (2) Source (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. 2 TIM1414-18L RF PERFORMANCE 41.7 42.1 42.3 44 42.1 41.7 VDS= 9V IDSQ ≅ 4.4A Pin= 36.5dBm 42 41 40 39 13.5 13.75 14 14.25 14.5 14.75 15 Frequency (GHz) Output power vs. Input power 18 f=14.25GHz VDS= 9V IDSQ ≅ 4.4A 45 40 16 14 Po 35 12 30 10 25 8 Ids 20 6 15 4 10 2 15 20 25 30 Pin(dBm) 3 35 40 Ids(A) 50 Pout(dBm) Po (dBm) 43 Output Power vs. Frequency TIM1414-18L Power Dissipation vs. Case Temperature 100 80 60 PT(W) 40 20 0 0 40 80 120 160 200 Tc (°C) IM3 vs. Output Power Characteristics -20 VDS= 9V IDSQ≅ 4.4A f= 14.25GHz Δf= 5MHz -30 IM3(dBc) -40 -50 -60 30 32 34 36 38 Po(dBm), Single Carrier Level 4 40