TI TMS66416410

TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
D
D
D
D
D
D
D
D
D
D
D
D
Organization . . .
1 048 576 x 16 Bits x 4 Banks
2 097 152 x 8 Bits x 4 Banks
4 194 304 x 4 Bits x 4 Banks
3.3-V Power Supply (± 10% Tolerance)
Four Banks for On-Chip Interleaving for
x8/x16 (Gapless Access) Depending on
Organizations
High Bandwidth – Up to 125-MHz Data
Rates
Burst Length Programmable to 1, 2, 4, 8
Programmable Output Sequence – Serial or
Interleave
Chip-Select and Clock-Enable for
Enhanced-System Interfacing
Cycle-by-Cycle DQ Bus Mask Capability
Only x16 SDRAM Configuration Supports
Upper-/Lower-Byte Masking Control
Programmable CAS Latency From Column
Address
Performance Ranges:
SYNCHRONOUS
CLOCK CYLE
TIME
ACCESS TIME
CLOCK TO
OUTPUT
tAC2
D
D
D
D
D
D
D
D
D
D
D
Pipeline Architecture (Single-Cycle
Architecture)
Single Write/Read Burst
Self-Refresh Capability (Every 16 ms)
Low-Noise, Low-Voltage
Transistor-Transistor Logic (LVTTL)
Interface
Power-Down Mode
Compatible With JEDEC Standards
16K RAS-Only Refresh (Total for All Banks)
4K Auto Refresh (Total for All Banks)/64 ms
Automatic Precharge and Controlled
Precharge
Burst Interruptions Supported:
– Read Interruption
– Write Interruption
– Precharge Interruption
Support Clock-Suspend Operation (Hold
Command)
Intel PC100 Compliant (-8 and -8A parts)
REFRESH
INTERVAL
tCK3
tCK2
tAC3
tREF
’664xx4-8
8 ns
10 ns
6 ns
6 ns
64 ms
’664xx4-8A
8 ns
15 ns
6 ns
7.5 ns
64 ms
’664xx4-10
10 ns
15 ns
7.5 ns
7.5 ns
64 ms
description
The TMS664xx4 series are 67 108 864-bit synchronous dynamic random-access memory (SDRAM) devices
which are organized as follow:
D
D
D
Four banks of 1 048 576 words with 16 bits per word
Four banks of 2 097 152 words with 8 bits per word
Four banks of 4 194 304 words with 4 bits per word
All inputs and outputs of the TMS664xx4 series are compatible with the LVTTL interface.
The SDRAM employs state-of-the-art technology for high-performance, reliability, and low power. All inputs and
outputs are synchronized with the CLK input to simplify system design and to enhance use with high-speed
microprocessors and caches.
The TMS664xx4 SDRAM is available in a 400-mil, 54-pin surface-mount thin small-outline package (TSOP)
(DGE suffix).
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright  1998, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
1
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
TMS664xx4 (LVTTL)
DGE PACKAGE
(TOP VIEW)
4M x 16
8M x 8
16M x 4
2
VCC
VCC
VCC
1
54
VSS
VSS
VSS
DQ0
DQ0
NC
2
53
NC
DQ7
DQ15
VCCQ
DQ1
VCCQ
NC
VCCQ
NC
3
52
4
51
VSSQ
NC
VSSQ
NC
VSSQ
DQ14
DQ2
DQ1
DQ0
5
50
DQ3
DQ6
VSSQ
DQ3
VSSQ
NC
VSSQ
NC
6
49
7
48
VCCQ
NC
DQ4
DQ2
NC
8
47
VCCQ
DQ5
VCCQ
NC
VCCQ
NC
9
46
10
45
ROW
ADDR
COL
ADDR
x4
A0 – A13
A0 – A9
x8
A0 – A13
A0 – A8
DQ13
x16
A0 – A13
A0 – A7
VCCQ
NC
VCCQ
DQ12
A10
Auto Precharge
NC
DQ5
DQ11
VSSQ
NC
VSSQ
NC
VSSQ
DQ10
BANKS
BANK-SELECT
ADDRESS
4
A13 – A12
DQ6
DQ3
DQ1
11
54-Pin
44
DQ2
DQ4
DQ9
VSSQ
DQ7
VSSQ
NC
VSSQ
NC
12
Plastic
43
13
TSOP–II
42
VCCQ
NC
VCCQ
NC
VCCQ
DQ8
VCC
DQML
VCC
NC
VCC
NC
14
(Pitch = 0.8 mm)
15
40
VSS
NC
VSS
NC
VSS
NC
DQMU
41
W
W
W
16
39
DQM
DQM
CAS
CAS
CAS
17
38
CLK
CLK
CLK
RAS
RAS
RAS
18
37
CKE
CKE
CKE
CS
CS
CS
19
36
NC
NC
NC
A13, BS0
A13, BS0
A13, BS0
20
35
A11
A11
A11
A12, BS1
A12, BS1
A12, BS1
21
34
A9
A9
A9
A10, AP
A10, AP
A10, AP
22
33
A8
A8
A8
A0
A0
A0
23
32
A7
A7
A7
A1
A1
A1
24
31
A6
A6
A6
A2
A2
A2
25
30
A5
A5
A5
A3
A3
A3
26
29
A4
A4
A4
VCC
VCC
VCC
27
28
VSS
VSS
VSS
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
PIN NOMENCLATURE
A[0:13]
Address Inputs
Four Banks
Column
A0 –A9 Column Addr (x4)
A0 –A8 Column Addr (x8)
A0 –A7 Column Addr (x16)
A10 Auto Precharge
A12 – A13 Bank-Select
Row
A0 – A11 Row Addrs
A12 – A13 Bank-Select
W
RAS
CAS
CKE
CLK
CS
DQ[0 : 3]
DQ[0 : 7]
DQ[0 :15]
DQMU/DQML
DQM
NC
VCC
VCCQ
VSS
VSSQ
Write Enable
Row-Address Strobe
Column-Address Strobe
Clock-Enable
System Clock
Chip-Select
SDRAM Data Input / Data Output (x4)
SDRAM Data Input / Data Output (x8)
SDRAM Data Input / Data Output (x16)
Data / Output Mask Enables for x16
Data / Output Mask Enables for x8/x4
No External Connect
Power Supply (3.3 V Typical)
Power Supply for Output Drivers (3.3 V Typical)
Ground
Ground for Output Drivers
functional block diagram (four banks)
Array Bank 0
CLK
CKE
AND
Array Bank 1
CS
(DQM) DQMx
RAS
CAS
W
A0 – A13
DQ
Buffer
Control
Array Bank 2
Array Bank 3
14
16
DQ0 – DQ15 (x16)
or
8
DQ0 – DQ7 (x8)
or
4
DQ0 – DQ3 (x4)
Mode Register
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
3
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
device numbering conventions (SDRAM family nomenclature)
TMS 6
64
xx
4 –xx
Prefix:
TMS = Commercial / MOS
Product Family:
6 = Synchronous Dynamic Random-Access Memory
Density, Refresh, Interface:
64 = 64M 4K Auto-Refresh LVTTL
Organization/Special Architecture:
41 = x 4 Pipeline
81 = x 8 Pipeline
16 = x 16 Pipeline
Number of Banks:
4 = Four Banks
Speed:
8 tCK3
8A tCK3
10 tCK3
= 8 ns
= 8 ns
= 10 ns
operation
All inputs to the ’664xx4 SDRAM are latched on the rising edge of the system (synchronous) clock. The outputs
(DQ0– DQ3 for x4, DQ0 – DQ7 for x8, and DQ0 – DQ15 for x16) are also referenced to the rising edge of CLK.
The ’664xx4 has four banks that are accessed independently. A bank must be activated before it can be
accessed (read from or written to). Refresh cycles refresh all banks alternately.
Five basic commands or functions control most operations of the ’664xx4:
D
D
D
D
D
Bank activate/row-address entry
Column-address entry/write operation
Column-address entry/read operation
Bank deactivate
Auto-refresh/self-refresh entry
Additionally, operations can be controlled by three methods: using chip select (CS) to select / deselect the
devices, using DQMx to enable/mask the DQ signals on a cycle-by-cycle basis, or using CKE to suspend (or
gate) the CLK input. The device contains a mode register that must be programmed for proper operation.
Table 1 through Table 3 show the various operations that are available on the ’664xx4. These truth tables
identify the command and/or operations and their respective mnemonics. Each truth table is followed by a
legend that explains the abbreviated symbols. An access operation refers to any READ (READ-P) or WRT
(WRT-P) command in progress at cycle n. Access operations include the cycle upon which the READ (READ-P)
or WRT (WRT-P) command is entered and all subsequent cycles through the completion of the access burst.
4
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
operation (continued)
Automatic
Mode
Register
Set
SLFR
MRS
IDLE
Self
Refresh
SLFR Exit
CKE↓PDE
REFR
CKE↑
Power
Down
Automatic
Auto
Refresh
ACT
Active
Power
Down
CKE↑
CLK
Suspend
CKE↓
Row
Active
CKE↓(HOLD)
Read
DEAC / DCAB
CKE↑(HOLD Exit)
WRT
Read
CKE↓(HOLD)
CLK
Suspend
WRITE
Write
READ
CKE↑(HOLD Exit)
Read P
Read-P
Write- P
Read-P
Write- P
Read P
Automatic
Write P
Precharge
CKE↑(HOLD Exit)
CKE↑(HOLD Exit)
Automatic
CKE↓(HOLD)
CKE↓(HOLD)
CLK
Suspend
Power On
CLK
Suspend
Automatic
Figure 1. State Diagram
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
5
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
operation (continued)
Table 1. Basic Command Truth Table†‡
STATE OF
BANK(S)
CS
RAS
CAS
W
A13
A12
A11
A10
A9 – A0
MNEMONIC
All Banks =
deac
L
L
L
L
X
X
X
X
A9 = V, A8 = 0,
A7 = 0, A6 – A0 = V
MRS
Bank deactivate (precharge)
X
L
L
H
L
BS
BS
X
L
X
DEAC
Deactivate all banks
X
L
L
H
L
X
X
X
H
X
DCAB
SB = deac
L
L
H
H
BS
BS
V
V
V
ACTV
COMMAND
Mode register set
Bank activate/row-address
entry
Column-address
Column
address entry / write
operation
Column address entry / write
Column-address
operation with auto-deactivate
Column-address
Column
address entry/read
operation
Column address entry/read
Column-address
operation with auto-deactivate
A0 – A7 = V,
A8 – A9 = X, for x16
SB = actv
L
H
L
L
BS
BS
X
L
A0 – A8 = V,
A9 = X, for x8
A0 – A9 = V, for x4
WRT
A0 – A7 = V,
A8 – A9 = X, for x16
SB = actv
L
H
L
L
BS
BS
X
H
A0 – A8 = V,
A9 = X, for x8
A0 – A9 = V, for x4
WRT-P
A0 – A7 = V,
A8 – A9 = X, for x16
SB = actv
L
H
L
H
BS
BS
X
L
A0 – A8 = V,
A9 = X, for x8
A0 – A9 = V, for x4
READ
A0 – A7 = V,
A8 – A9 = X, for x16
SB = actv
L
H
L
H
BS
BS
X
H
A0 – A8 = V,
A9 = X, for x8
A0 – A9 = V, for x4
READ-P
No operation
X
L
H
H
H
X
X
X
X
X
NOOP
Control-input inhibit / no
operation
X
H
X
X
X
X
X
X
X
X
DESL
All banks=
deac
L
L
L
H
X
X
X
X
X
REFR
Auto refresh§
† For execution of these commands on cycle n, CKE must satisfy requirements for one of the following:
— CKE (n – 1) must be high
— tCESP from power-down exit (PDE)
— tIS and nCLE from clock-suspend (HOLD) exit
— tCESP and tRC from self-refresh (SLFR) exit.
‡ DQMx (n) is a don’t care
§ Auto-refresh or self-refresh entry requires that all banks be deactivated or be in an idle state prior to the command entry. An REFR command
turns on four rows (one from each bank; therefore, 4096 REFR commands fully refresh the memory).
Legend:
n = CLK cycle number
actv = Activated
L = Logic low
deac = Deactivated
BS = Logic:
(A12 = 0, A13 = 0) select bank 0
(A12 = 1, A13 = 0) select bank 1
H = Logic high
(A12 = 0, A13 = 1) select bank 2
(A12 = 1, A13 = 1) select bank 3
X = Don’t care (either logic high or logic low)
SB = Select bank by A12 – A13 at cycle n
V = Valid
6
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
operation (continued)
Table 2. Clock-Enable (CKE) Command Truth Table†
COMMAND
Self-refresh entry
Power-down entry at n + 1‡
STATE OF BANK(S)
CKE
(n – 1)
CKE
(n)
CS
(n)
RAS
(n)
CAS
(n)
W
(n)
MNEMONIC
All banks = deac
H
L
L
L
L
H
SLFR
All banks = no
access operation§
H
L
X
X
X
X
PDE
L
H
L
H
H
H
—
L
H
H
X
X
X
—
Self refresh exit
Self-refresh
All banks =
self-refresh
Power-down exit¶
All banks =
power down
L
H
X
X
X
X
—
CLK suspend at n + 1
All banks = access
operation§
H
L
X
X
X
X
HOLD
CLK suspend exit at n + 1
All banks = access
operation§
L
H
X
X
X
X
—
† For execution of these commands, A0 – A13 (n) and DQMx (n) are don’t care entries.
‡ On cycle n, the device executes the respective command (listed in Table 1). On cycle (n+1), the device enters the power-down mode.
§ A bank is no longer in an access operation one cycle after the last data-out cycle of a READ (READ-P) operation, and two cycles after the last
data-in cycle of a WRT (WRT-P) operation. Neither the PDE nor the HOLD command is allowed on the cycle immediately following the last data-in
cycle of a WRT (WRT-P) operation.
¶ If setup time from CKE high to the next CLK high satisfies tCESP , the device executes the respective command (listed in Table 1). Otherwise,
either the DESL or NOOP command must be applied before any other command.
Legend:
n
= CLK cycle number
L
= Logic low
H
= Logic high
X
= Don’t care (either logic high or logic low)
deac = Deactivated
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
7
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
operation (continued)
Table 3. Data / Output Mask Enable (DQM) Command Truth Table†‡
STATE OF BANK(S)
DQM
(DQML/DQMU)§
(n)
D0 – D3 (x4)
D0 – D7 (x8)
D0 – D15 (x16)
(n)
Q0 – Q3 (x4)
Q0 – Q7 (x8)
Q0 – Q15 (x16)
(n+2)
MNEMONIC
—
Any bank = deac
X
N/A
Hi-Z
—
—
Any bank = actv
( no access operation )¶
X
N/A
Hi-Z
—
Data-in enable
Any bank = write
L
V
N/A
ENBL
Data-in mask
Any bank = write
H
M
N/A
MASK
Data-out enable
Any bank = read
L
N/A
V
ENBL
Data-out mask
Any bank = read
H
N/A
Hi-Z
MASK
COMMAND
† For execution of these commands on cycle n, one of the following must be true:
— CKE (n – 1) must be high
— tCESP from power-down exit (PDE)
— nCLE from clock-suspend (HOLD) exit
— tCESP and tRC from self-refresh (SLFR) exit
‡ CS (n), RAS (n), CAS (n), W (n), and A0 – A13 (n) are don’t care entries.
§ DQM is used for x4/x8 (no byte control). DQM (n) operations correspond to D0 – D7 and Q0 – Q7 events. DQML/DQMU are used for x16 (for
byte-control). DQML (n) operations correspond to D0 – D7 and Q0 – Q7 events, while DQMU (n) operations correspond to D8 – D15 and Q8 – Q15
events.
¶ A bank is no longer in an access operation one cycle after the last data-out cycle of a READ (READ-P) operation, and two cycles after the last
data-in cycle of a WRT (WRT-P) operation. Neither the PDE nor the HOLD command is allowed on the cycle immediately following the last data-in
cycle of a WRT (WRT-P) operation.
Legend:
n
= CLK cycle number
actv
= Activated
L
= Logic low
deac
= Deactivated
H
= Logic high
write
= Activated and accepting data in on cycle n
X
= Don’t care (either logic high or logic low)
read
= Activated and delivering data out on cycle n + 2
V
= Valid
M
= Masked input data
N/A
= Not applicable
Hi-Z
= High impedance
8
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
burst sequence
All data for the ’664xx4 is written or read in a burst fashion, that is, a single starting address is entered into the
device and then the ’664xx4 internally accesses a sequence of locations based on that starting address. Some
of the subsequent accesses after the first one can be at preceding, as well as succeeding, column addresses
depending on the starting address entered. This sequence can be programmed to follow either a serial burst
or an interleave burst (see Table 4 through Table 6). The length of the burst sequence can be user-programmed
to be 1, 2, 4, or 8. After a read burst is completed (as determined by the programmed burst length), the outputs
are in the high-impedance state until the next read access is initiated.
Table 4. 2-Bit Burst Sequences
INTERNAL COLUMN ADDRESS A0
DECIMAL
Serial
Interleave
BINARY
START
2ND
START
2ND
0
1
0
1
1
0
1
0
0
1
0
1
1
0
1
0
Table 5. 4-Bit Burst Sequences
INTERNAL COLUMN ADDRESS A1 – A0
DECIMAL
Serial
Interleave
BINARY
START
2ND
3RD
4TH
START
2ND
3RD
0
1
2
3
00
01
10
11
1
2
3
0
01
10
11
00
2
3
0
1
10
11
00
01
3
0
1
2
11
00
01
10
0
1
2
3
00
01
10
11
1
0
3
2
01
00
11
10
2
3
0
1
10
11
00
01
3
2
1
0
11
10
01
00
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
4TH
9
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
burst sequence (continued)
Table 6. 8-Bit Burst Sequences
INTERNAL COLUMN ADDRESS A2 – A0
DECIMAL
Serial
Interleave
BINARY
START
2ND
3RD
4TH
5TH
6TH
7TH
8TH
START
2ND
3RD
4TH
5TH
6TH
7TH
0
1
2
3
4
5
6
7
000
001
010
011
100
101
110
8TH
111
1
2
3
4
5
6
7
0
001
010
011
100
101
110
111
000
2
3
4
5
6
7
0
1
010
011
100
101
110
111
000
001
3
4
5
6
7
0
1
2
011
100
101
110
111
000
001
010
4
5
6
7
0
1
2
3
100
101
110
111
000
001
010
011
5
6
7
0
1
2
3
4
101
110
111
000
001
010
011
100
6
7
0
1
2
3
4
5
110
111
000
001
010
011
100
101
7
0
1
2
3
4
5
6
111
000
001
010
011
100
101
110
0
1
2
3
4
5
6
7
000
001
010
011
100
101
110
111
1
0
3
2
5
4
7
6
001
000
011
010
101
100
111
110
2
3
0
1
6
7
4
5
010
011
000
001
110
111
100
101
3
2
1
0
7
6
5
4
011
010
001
000
111
110
101
100
4
5
6
7
0
1
2
3
100
101
110
111
000
001
010
011
5
4
7
6
1
0
3
2
101
100
111
110
001
000
011
010
6
7
4
5
2
3
0
1
110
111
100
101
010
011
000
001
7
6
5
4
3
2
1
0
111
110
101
100
011
010
001
000
latency
The beginning data-output cycle of a read burst can be programmed to occur two or three CLK cycles after the
READ command (see Figure 2 on how to set the mode register.) This feature allows adjustment of the ’664xx4
to operate in accordance with the system’s capability to latch the data output from the ’664xx4. The delay
between the READ command and the beginning of the output burst is known as CAS latency (also known as
read latency). After the initial output cycle begins, the data burst occurs at the CLK frequency without any
intervening gaps. Use of minimum CAS latencies is restricted, based on the particular maximum frequency
rating of the ’664xx4. Once the mode register has been set (see the section on setting the mode register),
subsequent changes to the CAS latency are prohibited.
There is no latency for data-in cycles (write latency). The first data-in cycle of a write burst is entered at the same
rising edge of CLK as the WRT command. The write latency is fixed and is not determined by the mode-register
contents.
four-bank operation
The ’664xx4 contains four independent banks that can be accessed individually or in an interleaved fashion.
Each bank must be activated with a row address before it can be accessed. Each bank then must be deactivated
before it can be activated again with a new row address. The bank-activate/row-address-entry command
(ACTV) is entered by holding RAS low, CAS high, W high, and A12 – A13 valid on the rising edge of CLK. A bank
can be deactivated either automatically during a READ (READ-P) or a WRT (WRT-P) command, or by using
the bank-deactivate (DEAC) command. All banks can be deactivated at once by using the DCAB command (see
Table 1 for a description of the bank-deactivation, and Figure 25 and Figure 26 for examples of the operation).
10
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
four-bank row-access operation
One of the features of the four-bank operation is access to information on random rows at a higher rate of
operation than is possible with a standard DRAM. This is accomplished by activating one of the banks with a
row address and, while the data stream is being accessed to/from that bank, activating one of the other banks
with other row addresses. When the data stream to / from the first activated bank is complete, the data stream
to / from the second activated bank can begin without interruption. After the second bank is activated, the first
bank can be deactivated to allow the entry of a new row address for the next round of accesses or the entry of
new row addresses for other banks which currently are deactivated. In this manner, operation can continue in
an interleaved fashion. Figure 29A is an example of four-bank, row-interleaving, read bursts with automatic
deactivate with a CAS latency of 3 and a burst length of 8. Figure 29B is an example of four-bank,
row-interleaving, read bursts with automatic deactivate with a CAS latency of 3 and a burst length of 4.
four-bank column-access operation
The availability of four banks allows the access of data from random starting columns between banks at a higher
rate of operation. After activating each bank with a row address (ACTV command), A12 – A13 for the four-bank
column-access operation can be used to alternate READ or WRT commands between the banks to provide
gapless accesses at the CLK frequency, provided all specified timing requirements are met. Figure 30 is an
example of four-bank, column-interleaving, read bursts with a CAS latency of 3 and a burst length of 2.
bank deactivation (precharge)
All banks can be deactivated simultaneously (placed in precharge) by using the DCAB command. A single bank
can be deactivated by using the DEAC command. The DEAC command is entered identically to the DCAB
command except that A10 must be low and A12 – A13 select the bank to be precharged (see Table 1; Figure 27
and Figure 31 provide examples). A bank can also be deactivated automatically by using A10 during a READ
or WRT command. If A10 is held high during the entry of a READ or WRT command, the accessed bank,
selected by A12 – A13, is automatically deactivated upon completion of the access burst. If A10 is held low
during READ- or WRT-command entry, that bank remains active following the burst. The READ and WRT
commands with automatic deactivation are denoted as READ-P and WRT-P. See Figure 29A and Figure 29B
for examples.
chip-select
CS (chip-select) can be used to select or deselect the ’664xx4 for command entries, which might be required
for multiple-memory-device decoding. If CS is held high on the rising edge of CLK (DESL command), the device
does not respond to RAS, CAS, or W until the device is selected again by holding CS low on the rising edge
of CLK. Any other valid command can be entered simultaneously on the same rising CLK edge of the select
operation. The device can be selected/deselected on a cycle-by-cycle basis (see Table 1 and Table 2). Using
CS does not affect an access burst that is in progress; the DESL command can restrict only RAS, CAS, and
W inputs to the ’664xx4.
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
11
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
data/output mask
Masking of individual data cycles within a burst sequence can be accomplished by using the MASK command
(see Table 3). If DQM (or DQML/ DQMU of x16) is held high on the rising edge of CLK during a write burst, the
incident data word (referenced to the same rising edge of CLK) on DQ0 – DQ7 [or (DQ0–DQ7)/( DQ8– DQ15)
of x16] is ignored. If DQM (or DQML/DQMU of x16 ) is held high on the rising edge of CLK for a read burst,
DQ0– DQ7 [or (DQ0–DQ7)/( DQ8– DQ15) of x16], referenced to the second rising edge of CLK, are in the
high-impedance state. The application of DQM (DQML/DQMU) to data-output cycles (READ burst) involves a
latency of two CLK cycles, but the application of DQM to data-in cycles (WRITE burst) has no latency. The MASK
command (or its opposite, the ENBL command) is performed on a cycle-by-cycle basis, allowing the user to gate
any individual data cycle or cycles within either a read-burst or a write-burst sequence. Figure 14, Figure 38 and
Figure 39 show examples of data / output masking.
CLK-suspend/power-down mode
For normal device operation, CKE should be held high to enable CLK. If CKE goes low during the execution
of a READ (READ-P) or WRT (WRT-P) operation, the state of the DQ bus occurring at the immediate next rising
edge of CLK is frozen at its current state and no further inputs are accepted until CKE is returned high. This is
known as a CLK-suspend operation and its execution is denoted as a HOLD command. The device resumes
operation from the point at which it was placed in suspension, beginning with the second rising edge of CLK
after CKE is returned high. See Figure 42 and Figure 43 for examples.
If CKE is brought low when no READ (READ-P) or WRT (WRT-P) command is in progress, the device enters
power-down mode. If all banks are deactivated when power-down mode is entered, power consumption is
reduced to the minimum. Power-down mode can be used during row-active or auto-refresh periods to reduce
input-buffer power. After power-down mode has been entered, no further inputs are accepted until CKE returns
high. To ensure that data in the device remains valid during the power-down mode, the self-refresh command
( SLRF) must be executed concurrently with the power-down entry ( PDE) command. When exiting power-down
mode, new commands can be entered on the first CLK edge after CKE returns high, provided that the setup
time (tCESP) is satisfied. Table 2 shows the command configuration for a CLK-suspend/power-down operation;
Figure 18 and Figure 19 show examples of the procedure.
12
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
setting the mode register
The ’664xx4 contains a mode register that must be user-programmed with the CAS latency, the burst type, and
the burst length. This is accomplished by executing an MRS command with the information entered on address
lines A0 – A9. A logic 0 must be entered on A7 and A8, but A10 – A13 are “don’t care” entries for the ’664xx4.
When A9 = 1, the write burst length is always 1. When A9 = 0, the write burst length is defined by A2 – A0.
Figure 2 shows the valid combinations for a successful MRS command. Only valid addresses allow the mode
register to be changed. If the addresses are not valid, the previous contents of the mode register remain
unaffected. The MRS command is executed by holding RAS, CAS, and W low and the input-mode word valid
on A0 – A9 on the rising edge of CLK (see Table 1). The MRS command can be executed only when all banks
are deactivated and may not be executed while a burst is active. See Figure 24 and Figure 35 for examples.
A13
A12
A11
A10
A9
Reserved
A8
A7
0
0
A6
A5
A4
A3
A2
A1
A0
0 = Serial
1 = Interleave
(burst type)
REGISTER
BITS†
REGISTER
BIT A9
WRITE
BURST
LENGTH
A6
A5
A4
0
1
A2 – A0
1
0
0
1
1
0
1
CAS
LATENCY‡§
2
3
REGISTER
BITS†
BURST LENGTH
A2
A1
A0
0
0
0
0
0
0
1
1
0
1
0
1
1
2
4
8
† All other combinations are reserved.
‡ Refer to timing requirements for minimum valid read latencies based on maximum frequency rating.
§ Once the mode register has been set, subsequent changes to the CAS latency is prohibited.
Figure 2. Mode-Register Programming
refresh
The ’664xx4 must be refreshed at intervals not exceeding tREF (see timing requirements) or data cannot be
retained. Refresh is accomplished by performing one of the following:
D
D
D
An ACTV command (RAS-only refresh) to every row in all banks
4096 auto-refresh (REFR) commands
Putting the device in self-refresh mode
Regardless of the method used, refresh must be accomplished before tREF has expired. See Figure 34 for an
example.
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
13
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
auto refresh
Before performing an auto refresh, all banks must be deactivated (placed in precharge). To enter a REFR
command, RAS and CAS must be low and W must be high during the rising edge of CLK (see Table 1). The
refresh address is generated internally such that after 4096 REFR commands, all banks of the ’664xx4 are
refreshed. The external address and bank-select A12 – A13 are ignored. The execution of a REFR command
automatically deactivates all banks upon completion of the internal auto-refresh cycle. This allows consecutive
REFR-only commands to be executed, if desired, without any intervening DEAC commands. The REFR
commands do not necessarily have to be consecutive, but all 4096 must be completed before tREF expires.
self-refresh mode
To enter self-refresh mode, all banks of the ’664xx4 must be deactivated first and an SLFR command must be
executed (see Table 2). The SLFR command is identical to the REFR command except that CKE is low. For
proper entry of the SLFR command, CKE is brought low for the same rising edge of CLK when RAS and CAS
are low and W is high. CKE must be held low to stay in self-refresh mode. In the self-refresh mode, refreshing
signals are generated internally for all banks with all external signals (except CKE) being ignored. Data can be
retained by the device automatically for an indefinite period when power is maintained (consumption is reduced
to a minimum). To exit self-refresh mode, CKE must be brought high. New commands are issued after tRC has
expired. If CLK is made inactive during self-refresh, it must be returned to an active and stable condition before
CKE is brought high to exit self-refresh mode (see Figure 19).
Prior to entering and upon exiting self-refresh mode, 4096 REFR commands are recommended before
continuing with normal device operations. This ensures that the SDRAM is fully refreshed.
interrupted bursts
A read or write can be interrupted before the burst sequence is complete with no adverse effects to the operation.
This is accomplished by entering certain superseding commands as listed in Table 7 and Table 8, provided that
all timing requirements are met. The interruption of READ-P and WRT-P operations is not supported.
Table 7. Read-Burst Interruption
INTERRUPTING COMMAND
EFFECT OR NOTE ON USE DURING READ BURST
READ, READ-P
Current output cycles continue until the programmed latency from the superseding READ (READ-P)
command is met and new output cycles begin (see Figure 3).
WRT, WRT-P
The WRT (WRT-P) command immediately supersedes the read burst in progress. To avoid data contention,
DQMx must be high before the WRT (WRT-P) command to mask output of the read burst on cycles (nCCD–1),
nCCD, and (nCCD+1), assuming there is any output on these cycles (see Figure 4).
DEAC, DCAB
The DQ bus is in the high-impedance state when nHZP cycles are satisfied or upon completion of the read
burst, whichever occurs first (see Figure 5 and Figure 22).
14
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
interrupted bursts (continued)
nCCD = 2
CLK
READ Command
at Column Address C0
(see Note A)
Interrupting
READ Command
at Column Address C1
(see Note A)
C0
DQ
C0 + 1
C1
C1 + 1
C1 + 2
First Output Cycle for New
READ Command Begins Here
a) INTERRUPTED ON EVEN CYCLES
nCCD = 3
CLK
Interrupting
READ Command
at Column Address C1
(see Note A)
READ Command
at Column Address C0
(see Note A)
DQ
C0
C0 + 1
C0 + 2
C1
C1 + 1
First Output Cycle for New
READ Command Begins Here
b) INTERRUPTED ON ODD CYCLES
NOTE A: For this example, assume CAS latency = 2 and burst length > 2.
Figure 3. Read Burst Interrupted by Read Command
nCCD + 1
nCCD – 1
nCCD = 4
CLK
Interrupting
WRT Command
at Column Address C1
(see Note A)
READ Command
at Column Address C0
(see Note A)
DQ
DQMx
C0
C1
C1 + 1
C1 + 2
First Input Cycle for New WRT
Command Begins Here
See Note B
NOTES: A. For this example, read latency = 2 and burst length > 2.
B. DQMx must be high to mask output of the read burst on cycles (nCCD–1), (nCCD), and (nCCD+1).
Figure 4. Read Burst Interrupted by Write Command
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
15
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
interrupted bursts (continued)
nCCD = 2
CLK
READ Command
at Column Address C0
(see Note A)
nHZP3
Interrupting
DEAC/DCAB
Command
DQ
C0
C0 + 1
NOTE A: For this example, assume CAS latency = 3 and burst length > 2.
Figure 5. Read Burst Interrupted by DEAC Command
Table 8. Write-Burst Interruption
INTERRUPTING COMMAND
EFFECT OR NOTE ON USE DURING WRITE BURST
READ, READ-P
Data that was input on the previous cycle is written and no further data inputs are accepted (see Figure 6).
WRT, WRT-P
The new WRT (WRT-P) command and data-in immediately supersede the write burst in progress
(see Figure 7).
DEAC, DCAB
The DEAC/DCAB command immediately supersedes the write burst in progress. DQMx must be used to
mask the DQ bus such that the write recovery specification (nWR ) is not violated by the
interrupt (see Figure 8).
16
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
interrupted bursts (continued)
nCCD = 2
CLK
WRT Command
(see Note A)
READ Command
(see Note A)
D
DQ
D
Q
Q
Q
Q
a) INTERRUPTED ON EVEN CYCLES
nCCD = 1
CLK
WRT
Command
(see Note A)
DQ
READ
Command
(see Note A)
Q
D
b) INTERRUPTED ON ODD CYCLES
NOTE A: For this example, assume CAS latency = 2, burst length > 2.
Figure 6. Write Burst Interrupted by Read Command
nCCD = 2
CLK
Interrupting
WRT-P Command
WRT Command
at Column Address C0
(see Note A)
DQ
C0
C0 + 1
C1
C1 + 1
C1 + 2
C1 + 3
NOTE A: For this example, burst length > 2.
Figure 7. Write Burst Interrupted by Write Command
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
17
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
interrupted bursts (continued)
nCCD = 2
CLK
WRT Command
(see Note A)
DQ
D
DEAC or DCAB Command
(see Note A)
D
Ignored
nWR
DQMx
NOTE A: For the purposes of this example, CAS latency = 2 and burst length > 2.
Figure 8. Write Burst Interrupted by DEAC/DCAB Command
power up
Device initialization should be performed after a power up to the full VCC level. After power is established, a
200-µs interval is required (with no inputs other than CLK). After this interval, all banks of the device must be
deactivated. Eight REFR commands must be performed, and the mode register must be set to complete the
device initialization. See Figure 24.
18
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
absolute maximum ratings over operating ambient temperature range (unless otherwise noted)†
Supply voltage range, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.5 V to 4.6 V
Supply voltage range for output drivers, VCCQ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.5 V to 4.6 V
Voltage range on any input pin (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.5 V to 4.6 V
Voltage range on any output pin (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.5 V to VCC + 0.5 V
Short-circuit output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W
Operating ambient temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 55°C to 150°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltage values are with respect to VSS.
recommended operating conditions
MIN
NOM
MAX
UNIT
VCC
VCCQ
Supply voltage
3
3.3
3.6
V
Supply voltage for output drivers‡
3
3.3
3.6
V
VSS
VSSQ
Supply voltage
VIH
VIL
High-level input voltage
2
Low-level input voltage
– 0.3
0
Supply voltage for output drivers
0
TA
Operating ambient temperature
‡ VCCQ
VCC
0.3 V
v
V
0
)
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
V
VCC + 0.3
0.8
70
V
V
°C
19
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
electrical characteristics over recommended ranges of supply voltage and operating ambient
temperature (unless otherwise noted) (see Note 2)
PARAMETER
- 8 (x8 / x4)
TEST CONDITIONS
MIN
- 8 (x16)
MAX
MIN
- 8A (x8 / x4)
MAX
MIN
MAX
UNIT
VOH
High-level output
voltage
IOH = – 2 mA
VOL
Low-level output
voltage
IOL = 2 mA
0.4
0.4
0.4
V
II
Input current
(leakage)
0 V ≤ VI ≤ VCC + 0.3 V,
All other pins = 0 V to VCC
±10
±10
±10
µA
IO
Output current
(leakage)
0 V ≤ VO ≤ VCCQ
Output disabled
±10
±10
±10
µA
Operating
g
current
Burst length = 1,
tRC
tRC MIN
IOH/IOL = 0 mA
(see Notes 3, 4, and 5)
CAS latency = 2
115
125
95
mA
ICC1
CAS latency = 3
125
135
125
mA
ICC2P
ICC2PS
ICC2N
ICC2NS
ICC3P
ICC3PS
v
2.4
V
CKE
VIL MAX, tCK = 15 ns
(see Note 6)
1
1
1
mA
CKE and CLK
(see Note 7)
1
1
1
mA
Precharge
standby current
in
non-power-down
mode
CKE
VIH MIN, tCK = 15 ns
(see Note 6)
40
40
40
mA
5
5
5
mA
8
8
8
mA
8
8
8
mA
CKE
VIH MIN, tCK = 15 ns
(see Notes 3 and 6)
50
55
50
mA
CKE
VIH MIN, CLK
(see Notes 3 and 7)
15
15
15
mA
Active standby
current in
power-down
mode
ICC3NS
ICC4
Burst current
ICC5
ICC6
v VIL MAX, tCK = ∞
w
1 (see Note 7)
CKE v VIL MAX, tCK = 15 ns
tCK =
(see Notes 3 and 6)
v
CKE and CLK
VIL MAX, tCK = ∞
(see Notes 3 and 7)
w
w
v VIL MAX, tCK = ∞
Page burst, IOH/IOL = 0 mA
All banks activated
activated,
(see Notes 8, 9, and 10)
CAS latency = 2
165
165
120
mA
CAS latency = 3
225
245
165
mA
Auto-refresh
current
tRC
tRC MIN
(see Notes 4 and 7)
CAS latency = 2
150
150
150
mA
CAS latency = 3
150
150
150
mA
Self-refresh
current
CKE
1
1
1
mA
NOTES: 2.
3.
4.
5.
6.
7.
8.
9.
10.
20
w
2.4
Precharge
standbyy current
in power-down
mode
Active standby
current in
non-power-down
mode
ICC3N
2.4
w
v VIL MAX
All specifications apply to the device after power-up initialization. All control and address inputs must be stable and valid.
Only one bank is activated.
tRC
tRC MIN
Control, DQ, and address inputs change state twice during tRC.
Control, DQ, and address inputs change state once every 30 ns.
Control, DQ, and address inputs do not change state (stable).
4-bank ping-pong, burst length = 4, nCCD = 4 cycles, data pattern 0011.
Column address and bank address increment every 4 cycles.
A tCK of 10 ns is used to obtain ICC4 for CL3 of the -8A speed grade.
w
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
electrical characteristics over recommended ranges of supply voltage and operating ambient
temperature (unless otherwise noted) (see Note 2) (continued)
PARAMETER
– 8A (x16)
TEST CONDITIONS
MIN
– 10 (x8 / x4)
MAX
MIN
MAX
– 10 (x16)
MIN
MAX
UNIT
VOH
High-level output
voltage
IOH = – 2 mA
VOL
Low-level output
voltage
IOL = 2 mA
0.4
0.4
0.4
V
II
Input current
(leakage)
0 V ≤ VI ≤ VCC + 0.3 V,
All other pins = 0 V to VCC
±10
±10
±10
µA
IO
Output current
(leakage)
0 V ≤ VO ≤ VCCQ
Output disabled
±10
±10
±10
µA
Operating
g
current
Burst length = 1,
tRC
tRC MIN
IOH/IOL = 0 mA
(see Notes 3, 4, and 5)
CAS latency = 2
105
95
105
mA
ICC1
CAS latency = 3
135
105
115
mA
ICC2P
ICC2PS
ICC2N
ICC2NS
ICC3P
ICC3PS
w
2.4
v
2.4
V
Precharge
standbyy current
in power-down
mode
CKE
VIL MAX, tCK = 15 ns
(see Note 6)
1
1
1
mA
CKE and CLK
(see Note 7)
1
1
1
mA
Precharge
standby current
in
non-power-down
mode
CKE
VIH MIN, tCK = 15 ns
(see Note 6)
40
40
40
mA
5
5
5
mA
8
8
8
mA
8
8
8
mA
CKE
VIH MIN, tCK = 15 ns
(see Notes 3 and 6)
55
55
60
mA
CKE
VIH MIN, CLK
(see Notes 3 and 7)
15
15
15
mA
Active standby
current in
power-down
mode
ICC3NS
Active standby
current in
non-power-down
mode
ICC4
Burst current
ICC5
ICC6
ICC3N
2.4
v VIL MAX, tCK = ∞
w
1 (see Note 7)
CKE v VIL MAX, tCK = 15 ns
tCK =
(see Notes 3 and 6)
v
CKE and CLK
VIL MAX, tCK = ∞
(see Notes 3 and 7)
w
w
v VIL MAX, tCK = ∞
Page burst, IOH/IOL = 0 mA
All banks activated,
activated
(see Notes 8, 9, and 10)
CAS latency = 2
140
120
140
mA
CAS latency = 3
165
175
200
mA
Auto-refresh
current
tRC
tRC MIN
(see Notes 4 and 7)
CAS latency = 2
150
150
150
mA
CAS latency = 3
150
150
150
mA
Self-refresh
current
CKE
1
2
2
mA
NOTES: 2.
3.
4.
5.
6.
7.
8.
9.
10.
w
v VIL MAX
All specifications apply to the device after power-up initialization. All control and address inputs must be stable and valid.
Only one bank is activated.
tRC
tRC MIN
Control, DQ, and address inputs change state twice during tRC.
Control, DQ, and address inputs change state once every 30 ns.
Control, DQ, and address inputs do not change state (stable).
4-bank ping-pong, burst length = 4, nCCD = 4 cycles, data pattern 0011.
Column address and bank address increment every 4 cycles.
A tCK of 10 ns is used to obtain ICC4 for CL3 of the -8A speed grade.
w
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
21
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
capacitance over recommended ranges of supply voltage and operating ambient temperature
f = 1 MHz (see Note 11)
MIN
MAX
Ci(S)
Input capacitance, CLK input
PARAMETER
2.5
4
pF
Ci(AC)
Input capacitance, address and control inputs: A0 – A13, CS, DQMx, RAS, CAS, W
2.5
5
pF
Ci(E)
Input capacitance, CKE input
5
pF
Co
Output capacitance
6.5
pF
4
UNIT
NOTE 11: VCC = 3.3 ± 0.3 V and bias on pins under test is 0 V.
ac timing requirements† ‡
’664xx4-8
MIN
MAX
’664xx4-8A
’664xx4-10
MIN
MIN
MAX
MAX
UNIT
tCK2
tCK3
Cycle time, CLK
CAS latency = 2
10
15
15
ns
Cycle time, CLK
CAS latency = 3
8
8
10
ns
tCH
tCL
Pulse duration, CLK high
3
3
3
ns
Pulse duration, CLK low
3
3
3
ns
tAC2
Access time, CLK high to data out
(see Note 12)
CAS latency = 2
6
7.5
7.5
ns
tAC3
Access time, CLK high to data out
(see Note 12)
CAS latency = 3
6
6
7.5
ns
tOH2
Hold time, CLK high to data out with 50-pF
load
CAS latency = 2
3
3
3
ns
tOH3
Hold time, CLK high to data out with 50-pF
load
CAS latency = 3
3
3
3
ns
tLZ
Delay time, CLK high to DQ in low-impedance state (see Note 13)
1
1
2
ns
tHZ
Delay time, CLK high to DQ in high-impedance state
(see Note 14)
8
8
tIS
tIH
Setup time, address, control, and data input
2
2
Hold time, address, control, and data input
1
tCESP
tRAS
Power down/self-refresh exit time (see Note 15)
8
100000
10
ns
2
ns
1
1
ns
8
10
48
100000
50
ns
Delay time, ACTV command to DEAC or DCAB command
48
100000
ns
tRC
Delay time, ACTV, REFR, or SLFR command to ACTV, MRS,
REFR, or SLFR command
68
68
80
ns
tRCD
Delay time, ACTV command to READ, READ-P, WRT, or
WRT-P command (see Note 16)
20
20
30
ns
tRP
Delay time, DEAC or DCAB command to ACTV, MRS, REFR, or
SLFR command
20
20
30
ns
tRRD
Delay time, ACTV command in one bank to ACTV command in
the other bank
16
16
20
ns
tRSA
Delay time, MRS command to ACTV, MRS, REFR, or SLFR
command
16
16
20
ns
† See Parameter Measurement Information for load circuits (see Figure 9).
‡ All references are made to the rising transition of CLK, unless otherwise noted.
NOTES: 12. tAC is referenced from the rising transition of CLK that precedes the data-out cycle. For example, the first data-out tAC is referenced
from the rising transition of CLK that is CAS latency – one cycle after the READ command. An access time is measured at output
reference level 1.5 V.
13. tLZ is measured from the rising transition of CLK that is CAS latency – one cycle after the READ command.
14. tHZ MAX defines the time at which the outputs are no longer driven and is not referenced to output voltage levels.
15. See Figure 18 and Figure 19.
16. For read or write operations with automatic deactivate, tRCD must be set to satisfy minimum tRAS.
22
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
ac timing requirements†‡ (continued)
tAPR
Final data out of READ-P operation to ACTV, MRS, SLFR, or REFR
command
tAPW
Final data in of WRT-P operation to ACTV, MRS, SLFR, or REFR
command
tT
tREF
Transition time
’664xx4-8
’664xx4-8A
’664xx4-10
MIN
MIN
MIN
1
MAX
MAX
UNIT
tRP – (CL –1) * tCK
ns
tRP + 1 tCK
ns
5
Refresh interval
MAX
1
64
5
1
64
5
ns
64
ms
Delay time, final data in of WRT operation to DEAC or DCAB
command
1
nCCD
nCDD
Delay time, READ or WRT command to an interrupting command
1
Delay time, CS low or high to input enabled or inhibited
0
0
0
0
0
0
cycle
nCLE
Delay time, CKE high or low to CLK enabled or disabled
1
1
1
1
1
1
cycle
nCWL
Delay time, final data in of WRT command to READ, READ-P, WRT, or
WRT-P command
1
Delay time, ENBL or MASK command to enabled or masked data in
0
0
0
0
0
0
cycle
Delay time, ENBL or MASK command to enabled or masked data out
2
2
2
2
2
2
cycle
nWR
nDID
nDOD
1
1
1
cycle
1
1
cycle
1
cycle
nHZP2
Delay time, DEAC or DCAB command to DQ in
high-impedance state
CAS latency = 2
2
2
2
cycle
nHZP3
Delay time, DEAC or DCAB command to DQ in
high-impedance state
CAS latency = 3
3
3
3
cycle
0
cycle
nWCD Delay time, WRT command to first data in
† See Parameter Measurement Information for load circuits (see Figure 9).
‡ All references are made to the rising transition of CLK, unless otherwise noted.
POST OFFICE BOX 1443
0
• HOUSTON, TEXAS 77251–1443
0
0
0
0
23
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
PARAMETER MEASUREMENT INFORMATION
general information for ac timing measurements
The ac timing measurements are based on signal rise and fall times equal to 1 ns (tT = 1 ns) and a midpoint
reference level of 1.5 V (INPUT = 2.8 V, 0 V) for LVTTL. For signal rise and fall times greater than 1 ns, the
reference level should be changed to VIH MIN and VIL MAX instead of the midpoint level. All specifications
referring to READ commands are valid for READ-P commands unless otherwise noted. All specifications
referring to WRT commands are also valid for WRT-P commands unless otherwise noted. All specifications
referring to consecutive commands are specified as consecutive commands for the same bank unless
otherwise noted.
Output
Under
Test
Z = 50 Ω
CL = 50 pF
Figure 9. ac Load Circuit
24
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
PARAMETER MEASUREMENT INFORMATION
tCK
tCH
CLK
tCL
tT
tT
tIS
tIH
DQ0 – DQ15 (x16), DQ0 – DQ7 (x8),
DQ0 – DQ3 (x4), A0 – A13, CS, RAS,
CAS, W, DQMx, CKE
tT
tIS, tCESP
tIH
DQ0 – DQ15 (x16), DQ0 – DQ7 (x8),
DQ0 – DQ3 (x4), A0 – A13, CS, RAS,
CAS, W, DQMx, CKE
tT
Figure 10. Input-Attribute Parameters
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
25
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
PARAMETER MEASUREMENT INFORMATION
CAS Latency
CLK
ACTV
Command
READ
Command
tAC
tHZ
tLZ
tOH2, tOH3
DQ
Figure 11. Output Parameters
ACTV
tRAS
DEAC, DCAB
ACTV
tRCD
READ, WRT
DEAC, DCAB
tRP
ACTV, MRS, REFR, SLFR
REFR
tRC
ACTV, MRS, REFR, SLFR
ACTV
tRC
ACTV, MRS, REFR, SLFR
SELF-REFRESH EXIT
tRC
ACTV, MRS, REFR, SLFR
ACTV
tRRD
MRS
tRSA
ACTV, REFR, SLFR, MRS
READ, WRT
nCCD
STOP, READ, WRT, DEAC, DCAB
(see Note A)
ACTV (of a different bank)
nCDD
DESL
Command
Disable
CLK
NOTE A: tRRD is specified for command execution in one bank to command execution in another bank.
Figure 12. Command-to-Command Parameters
26
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
PARAMETER MEASUREMENT INFORMATION
nHZP3
CLK
DEAC / DCAB
Command
tHZ
DQ
(For CL = 3)
Final Output of
Burst
nHZP2
DQ
(For CL = 2)
Final Output of
Burst
NOTE A: For this example, assume CAS latency = 2, 3 and burst length > 1.
Figure 13. Final Data Output to DEAC or DCAB Command for CAS Latency = 2, 3
CAS Latency = 2
(see Note A)
nWR
nDOD
(for ENBL)
CLK
nDOD
(for MASK)
READ Command
tIH
tIS
DQ
Q
D
ENBL Command
DQMx
DEAC/DCAB
Command
WRT Command
Ignored
MASK
Command
MASK
Command
NOTE A: For this example, assume CAS latency = 2 and burst length = 2.
Figure 14. DQ Masking
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
27
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
PARAMETER MEASUREMENT INFORMATION
CAS Latency = 2
(see Note A)
tAPR
CLK
READ-P Command
ACTV Command
DQ
Q
Q
NOTE A: For this example, assume CAS latency = 2 and burst length = 2.
Figure 15. Read Automatic-Deactivate (Autoprecharge)
tAPW
CLK
WRT - P Command
DQ
ACTV Command
D
D
NOTE A: For this example, the burst length = 2.
Figure 16. Write Automatic-Deactivate (Autoprecharge)
nCLE
nCLE
CLK
tIH
DQ
Q
Q
Q
Q
(Assume Final Data Output of Burst)
tIH
tIS
tIS
CKE
Figure 17. CLK-Suspend Operation (Assume Burst Length = 4)
28
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
PARAMETER MEASUREMENT INFORMATION
CLK
CLK Is Don’t Care, But Must Be
Stable Before CKE High
Last Data-In
WRT (WRT-P)
Operation
Last Data-out
READ (READ-P)
Operation
Exit Power-Down
Mode If tCESP Is
Satisfied
(New Command)
Enter
Power-down
Mode
CKE
tCESP
tIH
tIS
CLK
DESL or NOOP
Command Only If
tCESP Is Not Satisfied
CLK Is Don’t Care, But Must Be
Stable Before CKE High
Last Data-In
WRT (WRT-P)
Operation
Last Data-Out
READ (READ-P)
Operation
Enter
Power-Down
Mode
Exit Power-Down
Mode
(New Command)
CKE
tCESP
tIH
tIS
Figure 18. Power-Down Operation
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
29
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
PARAMETER MEASUREMENT INFORMATION
CLK
Exit SLFR If tCESP
Is Satisfied
CLK Is Don’t Care, But Must
Be Stable Before CKE High
SLFR
Both Banks Command
Deactivated
ACTV, MRS,
or REFR
Command
DESL or NOOP Only
Until tRC Is Satisfied
tIS
CKE
tRC
tIH
tCESP
CLK
tCESP Not
Yet Satisfied
CLK Is Don’t Care, But Must
Be Stable Before CKE High
SLFR
Both Banks Command
Deactivated
Exit SLFR
ACTV, MRS,
or REFR
Command
DESL or NOOP Only
Until tRC Is Satisfied
tIS
CKE
tRC
tIH
tCESP
NOTES: A. Assume both banks are deactivated before the execution of SLFR.
B. Before/after self-refresh mode, 4K burst auto-refresh cycles are recommended to ensure that the SDRAM is fully refreshed.
Figure 19. Self-Refresh Entry/Exit
30
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
PARAMETER MEASUREMENT INFORMATION
CLK
Final Input of
Write Burst
(CL = 2) DQ
D
Final Input of
Write Burst
(CL = 3) DQ
DEAC/DCAB
Command
READ
Command
(CL = 2)
nHZP2
D
Q
Q
Q
Q
READ
Command
(CL = 3)
nHZP3
D
Q
Q
Q
Q
Q
NOTE A: Assume burst length = 8.
Figure 20. Write Burst Followed by DEAC/DCAB-Interrupted Read
nCWL
nWR
CLK
WRT
Command
WRT
Command
D
D
DQ
DEAC/DCAB
Command
NOTE A: For this example, assume burst length = 1.
Figure 21. Write Followed by Deactivate
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
31
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
PARAMETER MEASUREMENT INFORMATION
nHZP3
CLK
READ Command
DEAC or DCAB Command
tHZ
Q
DQ
Q
Q
NOTE A: For this example, assume CAS latency = 3, and burst length = 4.
Figure 22. Read Followed by Deactivate
tAPR
CLK
READ-P Command
Final Data Out
ACTV, MRS, REFR, or SLFR Command
Q
DQ
NOTE A: For this example, assume CAS latency = 3, and burst length = 1.
Figure 23. Read With Auto-Deactivate
32
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
DCAB
Command
REFR #1
Command
REFR #8
Command
MRS
New Command
Command Can Start Entering Here
CLK
tCK
tRC
200 µs
VCC
VCCQ
tRSA
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
CAS
tIH
W
A10
A11 – A13
Mode
A0 – A9
Hi–Z
DQ
A9 = V
A7, A8 = V
A0 – A6 = V
(see Note A)
DQMx
CS
CKE
Time Lapse
Time Lapse
NOTE A: Refer to the section titled “Setting the Mode Register”.
Figure 24. Power-Up Sequence
Time Lapse
33
SMOS695A – APRIL 1998 – REVISED JULY 1998
PARAMETER MEASUREMENT INFORMATION
RAS
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
tIS
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
PARAMETER MEASUREMENT INFORMATION
ACTV_0
READ_0
DEAC_0
CLK
tRCD
a
DQ
b
c
DQMx
RAS
CAS
W
A13
A12
A11
R0
A10
R0
A0 – A9
R0
C0
CS
CKE
BURST
TYPE
BANK
ROW
(D/Q)
(0 – 3)
ADDR
Q
0
R0
BURST CYCLE
a
C0†
b
c
d
C0 + 1
C0 + 2
C0 + 3
† Column-address sequence depends on programmed burst type and starting address C0 (see Table 5).
NOTE A: This example illustrates minimum tRCD for the ’664xx4 at 125 MHz.
Figure 25. Read Burst (CAS latency = 3, burst length = 4)
34
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
d
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
PARAMETER MEASUREMENT INFORMATION
ACTV_3
WRT_3
DEAC_3
CLK
tRCD
nWR
a
DQ
c
b
e
d
g
f
h
DQMx
RAS
CAS
W
A13
A12
A11
R0
A10
R0
A0 – A9
R0
C0
CS
CKE
BURST
TYPE
BANK
ROW
(D/Q)
(0 – 3)
ADDR
BURST CYCLE
a
b
c
d
e
f
g
h
C0†
D
3
R0
C0 + 1 C0 + 2 C0 + 3 C0 + 4 C0 + 5 C0 + 6 C0 + 7
† Column-address sequence depends on programmed burst type and starting address C0 (see Table 6).
NOTE A: This example illustrates minimum tRCD and nWR for the ’664xx4 at 125 MHz.
Figure 26. Write Burst (burst length = 8)
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
35
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
PARAMETER MEASUREMENT INFORMATION
ACTV_1
WRT_1
READ_1
DEAC_1
CLK
tRCD
a
DQ
c
b
d
DQMx
RAS
CAS
W
A13
A12
A11
R0
A10
R0
A0 – A9
R0
C0
C1
CS
CKE
BURST
TYPE
BANK
ROW
(D/Q)
(0 – 3)
ADDR
a
b
C0†
C0 + 1
D
1
R0
Q
1
R0
BURST CYCLE
c
d
C1
C1 + 1
† Column-address sequence depends on programmed burst type and starting addresses C0 and C1 (see Table 4).
NOTE A: This example illustrates minimum tRCD for the ’664xx4 at 125 MHz.
Figure 27. Write-Read Burst (CAS latency = 3, burst length = 2)
36
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
ACTV_2
READ_2
WRT-P_2
CLK
tRCD
a
DQ
b
c
d
e
f
g
h
i
j
k
l
m
n
o
p
DQMx
RAS
CAS
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
A12
A11
R0
A10
R0
A0 – A9
R0
C1
C0
CS
CKE
BANK
ROW
(D/Q)
(0 –3)
ADDR
a
b
c
d
e
f
g
h
C0†
C0 + 1
C0 + 2
C0 + 3
C0 + 4
C0 + 5
C0 + 6
C0 + 7
Q
2
R0
D
2
R0
BURST CYCLE
i
C1
† Column-address sequence depends on programmed burst type and starting address C0 (see Table 6).
NOTE A: This example illustrates minimum tRCD for the ’664xx4 at 125 MHz.
j
k
l
m
n
o
p
C1 + 1
C1 + 2
C1 + 3
C1 + 4
C1 + 5
C1 + 6
C1 + 7
Figure 28. Read-Write Burst With Automatic Deactivate (CAS latency = 3, burst length = 8)
37
SMOS695A – APRIL 1998 – REVISED JULY 1998
BURST
TYPE
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
A13
PARAMETER MEASUREMENT INFORMATION
W
ACTV_1
READ-P_1
ACTV_2
READ-P_2
ACTV_3
tRCD
tRCD
DQ
a
b
c
d
tRCD
e
f
g
h
i
j
k
l
m
n
o
p
q
r
s
DQMx
RAS
CAS
A13
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
A12
A11
R0
R1
R2
R3
A10
R0
R1
R2
R3
A0 – A9
R0
C0
R1
R2
C1
R3
C2
CS
CKE
BURST
TYPE
BANK
ROW
(D/Q)
(0 –3)
ADDR
a
b
c
d
e
f
g
h
C0†
C0 + 1
C0 + 2
C0 + 3
C0 + 4
C0 + 5
C0 + 6
C0 + 7
Q
0
R0
Q
1
R1
Q
2
R2
BURST CYCLE
i
j
k
l
m
n
o
p
C1
C1 + 1
C1 + 2
C1 + 3
C1 + 4
C1 + 5
C1 + 6
C1 + 7
q
r
s
...
C2
C2 + 1
C2 + 2
...
† Column-address sequence depends on programmed burst type and starting addresses C0, C1, and C2 (see Table 6).
NOTE A: This example illustrates minimum tRCD for the ’664xx4 at 125 MHz.
Figure 29. [A] Four-Bank Row-Interleaving Burst Length of 8 With Automatic Deactivate (CAS latency = 3, burst length = 8)
PARAMETER MEASUREMENT INFORMATION
W
Template Release Date: 7–11–94
CLK
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
READ-P_0
SMOS695A – APRIL 1998 – REVISED JULY 1998
38
ACTV_0
READ-P_0
ACTV_1
ACTV_0
READ-P_1
ACTV_2
READ-P_2
ACTV_3
READ-P_3
ACTV_0
READ-P_0
ACTV_1
READ-P_1
CLK
tRCD
tRCD
a
DQ
tRCD
b
c
d
tRCD
e
f
g
h
i
tRCD
j
k
l
tRCD
m
n
o
p
q
r
s
DQMx
RAS
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
A13
A12
A11
R0
R1
R2
R3
R4
R5
A10
R0
R1
R2
R3
R4
R5
A0 – A9
R0
C0
R1
C1
R2
C2
R3
C3
R4
C4
C5
R5
CS
CKE
BANK
ROW
(D/Q)
(0 –3)
ADDR
a
b
c
d
Q
0
R0
C0†
C0 + 1
C0 + 2
C0 + 3
Q
1
R1
Q
2
R2
Q
3
R3
Q
0
R4
BURST CYCLE
e
f
g
h
C1
C1 + 1
C1 + 2
C1 + 3
i
j
k
l
C2
C2 + 1
C2 + 2
C2 + 3
m
n
o
p
C3
C3 + 1
C3 + 2
C3 + 3
q
r
s
...
C4
C4 + 1
C4 + 2
...
† Column-address sequence depends on programmed burst type and starting addresses C0, C1, and C2 (see Table 5).
NOTE A: This example illustrates minimum tRCD for the ’664xx4 at 125 MHz.
Figure 29. [B] Four-Bank Row-Interleaving Burst Length of 4 With Automatic Deactivate (CAS latency = 3, burst length = 4) (Cont’d)
39
SMOS695A – APRIL 1998 – REVISED JULY 1998
BURST
TYPE
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
W
PARAMETER MEASUREMENT INFORMATION
CAS
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
PARAMETER MEASUREMENT INFORMATION
ACTV_0
ACTV_1
ACTV_2
ACTV_3 READ_0
READ_1
READ_2
READ_3
READ_0
CLK
a
DQ
c
b
d
e
f
DQMx
RAS
CAS
W
A13
A12
A11
R0
R1
R2
R3
A10
R0
R1
R2
R3
A0 – A9
R0
R1
R2
R3
C0
C1
C2
C3
C4
CS
CKE
BURST
TYPE
BANK
ROW
(D/Q)
(0 –3)
ADDR
Q
0
R0
Q
1
R1
Q
2
R2
Q
3
R3
BURST CYCLE
a
C0†
b
c
d
C1
C1 + 1
e
f
C2
C2 + 1
g
h
C3
C3 + 1
...
...
...
...
C0 + 1
...
...
...
† Column-address sequence depends on programmed burst type and starting addresses C0, C1, and C2 (see Table 4).
Figure 30. Four-Bank Column-Interleaving Read Bursts (CAS latency = 3, burst length = 2)
40
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
PARAMETER MEASUREMENT INFORMATION
READ_0
ACTV_2
ACTV_0
DEAC_0
WRT_2
DEAC_2
CLK
tRCD
DQ
a
b
c
d
e
f
g
h
DQMx
RAS
CAS
W
A13
A12
A11
R0
R1
A10
R0
R1
A0 – A9
R0
C0
R1
C1
CS
CKE
BURST
TYPE
BANK
ROW
(D/Q)
(0 – 3)
ADDR
Q
0
R0
BURST CYCLE
a
C0†
b
c
d
C0 + 1
C0 + 2
C0 + 3
e
f
g
h
D
2
R1
C1
C1 + 1 C1 + 2 C1 + 3
† Column-address sequence depends on programmed burst type and starting addresses C0 and C1 (see Table 5).
NOTE A: This example illustrates minimum tRCD for the ’664xx4 at 125 MHz.
Figure 31. Read-Burst Bank 0, Write-Burst Bank 1 (CAS latency = 3, burst length = 4)
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
41
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
PARAMETER MEASUREMENT INFORMATION
ACTV_3
ACTV_0
WRT-P_3
READ-P_0
CLK
tRRD
nCWL
a
DQ
c
b
e
d
tRCD
DQMx
RAS
CAS
W
A13
A12
A11
R0
R1
A10
R0
R1
A0 – A9
R0
R1
C0
C1
CS
CKE
BURST
TYPE
BANK
ROW
(D/Q)
(0 –3)
ADDR
D
3
R0
BURST CYCLE
a
C0†
b
c
d
C0 + 1
C0 + 2
C0 + 3
e
f
g
h
Q
0
R1
C1
C1 + 1 C1 + 2 C1 + 3
† Column-address sequence depends on programmed burst type and starting addresses C0 and C1 (see Table 5).
NOTE A: This example illustrates minimum nCWL,tRRD, and tRCD for the ’664xx4 at 125 MHz.
Figure 32. Write-Burst Bank 3, Read-Burst Bank 0 With Automatic Deactivate
(CAS latency = 3, burst length = 4)
42
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
f
g
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
PARAMETER MEASUREMENT INFORMATION
READ_1
ACTV_0
ACTV_1
WRT_0
DCAB
CLK
g
e
tRCD
b
a
DQ
c
f
d
h
nDOD
DQMx
RAS
CAS
W
A13
A12
A11
R0
R1
A10
R0
R1
A0 – A9
R0
C0
R1
C1
CS
CKE
BURST
TYPE
BANK
ROW
(D/Q)
(0 –3)
ADDR
Q
1
R0
BURST CYCLE
a
C0†
b
c
d
C0 + 1
C0 + 2
C0 + 3
e
f
g
h
D
0
R1
C1
C1 + 1 C1 + 2 C1 + 3
† Column-address sequence depends on programmed burst type and starting addresses C0 and C1 (see Table 5).
NOTE A: This example illustrates minimum tRCD for the ’664xx4 at 100 MHz.
Figure 33. Use of DQM for Output and Data-In Cycle Masking (Read-Burst Bank 1, Write-Burst Bank 0,
Deactivate All Banks) (CAS latency = 2, burst length = 4)
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
43
ACTV_3
READ_3
DEAC_3
REFR
tRC
tRCD
tRP
tRC
a
DQ
b
c
d
e
f
g
h
DQMx
RAS
CAS
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
A13
A12
A11
R0
A10
R0
A0 – A9
R0
C0
CS
CKE
BURST
TYPE
BANK
ROW
(D/Q)
(0 –3)
ADDR
Q
3
R0
BURST CYCLE
a
C0†
b
c
d
e
f
g
h
C0 + 1
C0 + 2
C0 + 3
C0 + 4
C0 + 5
C0 + 6
C0 + 7
† Column-address sequence depends on programmed burst type and starting address C0 (see Table 6).
NOTE A: This example illustrates minimum tRC, tRCD, and tRP for the ’664xx4 at 100 MHz.
Figure 34. Refresh Cycles (Refreshes Followed by Read Burst, Followed by Refresh)
(CAS latency = 2, burst length = 8)
PARAMETER MEASUREMENT INFORMATION
W
Template Release Date: 7–11–94
CLK
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
REFR
SMOS695A – APRIL 1998 – REVISED JULY 1998
44
REFR
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
PARAMETER MEASUREMENT INFORMATION
DCAB
MRS
ACTV_0
WRT-P_0
CLK
tRCD
tRSA
a
DQ
b
c
d
DQMx
RAS
CAS
W
See Note A
A13
See Note A
A12
See Note A
R0
A11
See Note A
R0
A10
See Note A
R0
A0 – A9
C0
CS
CKE
BURST
TYPE
BANK
ROW
(D/Q)
(0 –3)
ADDR
D
0
R0
BURST CYCLE
a
C0†
b
c
d
C0 + 1
C0 + 2
C0 + 3
† Column-address sequence depends on programmed burst type and starting address C0 (see Table 5).
NOTES: A. Refer to Figure 2 (for setting mode registers)
B. This example illustrates minimum tRCD and tRSA for the ’664xx4 at 125 MHz.
Figure 35. Mode-Register Programming
(Deactivate All, Mode Program, Write Burst With Automatic Deactivate)
(CAS latency = 3, burst length = 4)
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
45
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
PARAMETER MEASUREMENT INFORMATION
ACTV_3
READ-P_3
HOLD
ACTV_0
WRT-P_0
CLK
DQ
nCLE
tRCD
a
b
c
e
d
f
g
h
DQMx
RAS
CAS
W
A13
A12
A11
R0
R1
A10
R0
R1
A0 – A9
R0
C0
R1
C1
CS
CKE
BURST
TYPE
BANK
ROW
(D/Q)
(0 –3)
ADDR
Q
3
R0
BURST CYCLE
a
C0†
b
c
d
C0 + 1
C0 + 2
C0 + 3
e
f
g
h
D
0
R1
C1†
C1 + 1 C1 + 2 C1 + 3
† Column-address sequence depends on programmed burst type and starting addresses C0 and C1 (see Table 5).
NOTES: A. This example illustrates minimum tRCD and tAPW for the ’664xx4 at 100 MHz.
B. If entering the PDE command with violation of short tAPW, the device is still entering the power-down mode and then both
banks are deactivated (still in power-down mode).
Figure 36. Use of CKE for Clock Gating (Hold) and Standby Mode
(Read-Burst Bank 3 With Hold, Write-Burst Bank 0, Standby Mode)
(CAS latency = 2, burst length = 4)
46
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
PARAMETER MEASUREMENT INFORMATION
READ_0
ACTV_0
ACTV_1
DEAC_0
WRT_1
DEAC_1
CLK
tRCD
nWR
nHZP3
e
DQ0 – DQ7
a
DQ8 – DQ15
b
c
f
g
h
d
DQMU
DQML
RAS
CAS
W
A13
A12
A11
R0
R1
A10
R0
R1
A0 – A9
R0
C0
R1
C1
CS
CKE
BURST
TYPE
BANK
ROW
(D/Q)
(0 –3)
ADDR
a
b
c
d
C0†
C0 + 1
C0 + 2
C0 + 3
Q
0
R0
D
1
R1
BURST CYCLE
e
f
g
h
C1†
C1 + 1 C1 + 2 C1 + 3
† Column-address sequence depends on programmed burst type and starting addresses C0 and C1 (see Table 5).
NOTE A: This example illustrates minimum tRCD read burst, and a minimum nWR write burst for the ’664xx4 at
125 MHz.
Figure 37. Read-Burst Bank 0, Write-Burst Bank 1 (With Lower Bytes Masked Out During the READ
Cycles and Upper Bytes Masked Out During the WRITE Cycles) (Only for x16)
(CAS latency = 3, burst length = 4)
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
47
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
PARAMETER MEASUREMENT INFORMATION
READ_1
ACTV_0
ACTV_1
WRT_0
DCAB
CLK
nWR
tRCD
a
DQ0 – DQ7
b
c
d
c
d
f
h
DQML
a
DQ8 – DQ15
b
e
f
g
h
DQMU
RAS
CAS
W
A13
A12
A11
R0
R1
A10
R0
R1
A0 – A9
R0
C0
R1
C1
CS
CKE
BURST
TYPE
BANK
ROW
(D/Q)
(0 –3)
ADDR
a
b
c
d
C0†
C0 + 1
C0 + 2
C0 + 3
Q
1
R0
D
0
R1
BURST CYCLE
e
f
g
h
C1†
C1 + 1 C1 + 2 C1 + 3
† Column-address sequence depends on programmed burst type and starting addresses C0 and C1 (see Table 5).
NOTE A: This example illustrates minimum tRCD and a minimum nWR write burst for the ’664xx4 at 100 MHz.
Figure 38. Use of DQM for Output and Data-In Cycle Masking (Read-Burst Bank 1, Write-Burst Bank 0,
Deactivate All Banks) [Only Masked Out the Lower Bytes (Random Bits)] for x16
(CAS latency = 2, burst length = 4)
48
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
PARAMETER MEASUREMENT INFORMATION
ACTV_0
ACTV_2
ACTV_3
READ_0
ACT1
READ_2
READ_3
READ_1
READ_0
CLK
tRCD
a
DQ0 – DQ7
b
c
d
e
f
h
tRRD
Hi-Z
DQ8 – DQ15
DQMU
DQML
RAS
CAS
W
A13
A12
A11
R0
R2
R3
R1
A10
R0
R2
R3
R1
A0 – A9
R0
R2
C0
R3
C2
R1
C3
e
f
g
C3
C3 + 1
C1
C4
CS
CKE
BURST
TYPE
BANK
ROW
(D/Q)
(0 –3)
ADDR
Q
0
R0
Q
2
R2
Q
3
R3
Q
1
R1
BURST CYCLE
a
C0†
b
c
d
C2
C2 + 1
h
C0 + 1
C1
C1 + 1
† Column-address sequence depends on programmed burst type and starting addresses C0, C1, C2, and C3 (see Table 4).
NOTE A: This example illustrates minimum tRCD and minimum tRRD for the ’664xx4 at 125 MHz.
Figure 39. Four-Bank Column-Interleaving Read Bursts (With Upper Bytes to be Masked) (Only for x16)
(CAS latency = 3, burst length = 2)
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
49
tRCD
a
DQ
c
b
d
e
g
f
h
i
DQMx
RAS
CAS
A13
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
A12
A11
R0
A10
R0
A0 – A9
R0
C0
C1
CS
CKE
BURST
TYPE
BANK
ROW
(D/Q)
(0 –3)
ADDR
Q
1
R0
BURST CYCLE
a
C0†
b
c
d
e
f
g
h
C0 + 1
C0 + 2
C0 + 3
C0 + 4
C0 + 5
C0 + 6
C0 + 7
i
D
1
R0
C1
† Column-address sequence depends on programmed burst type and starting addresses C0 and C1 (see Table 6).
NOTE A: This example illustrates minimum tRCD for the ’664xx4 at 125 MHz.
Figure 40. Read Burst — Single Write With Automatic Deactivate (CAS latency = 3, burst length = 8)
PARAMETER MEASUREMENT INFORMATION
W
Template Release Date: 7–11–94
CLK
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
WRT-P_1
READ_1
SMOS695A – APRIL 1998 – REVISED JULY 1998
50
ACTV_1
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A– APRIL 1998 – REVISED JULY 1998
PARAMETER MEASUREMENT INFORMATION
ACTV_0
READ-P_0
CLK
tRCD
n
DQ
n+1
n+2
n+3
n+4
n+5
n+6
n+7
DQMx
RAS
CAS
W
A13
A12
A11
R0
A10
R0
A0 – A9
R0
C0
CS
CKE
BURST
TYPE
BANK
ROW
(D/Q)
(0 – 3)
ADDR
Q
0
R0
BURST CYCLE
n
C0†
n+1
n+2
n+3
n+4
n+5
n+6
n+7
C0 + 1
C0 + 2
C0 + 3
C0 + 4
C0 + 5
C0 + 6
C0 + 7
† Column-address sequence depends on programmed burst type and starting addresses C0 and C1 (see Table 6).
NOTE A: This example illustrates minimum tRCD for the ’664xx4 at 125 MHz.
Figure 41. Read Bursts With Automatic Deactivate (read latency = 3, burst length = 8) (for x16)
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
51
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A– APRIL 1998 – REVISED JULY 1998
PARAMETER MEASUREMENT INFORMATION
ACTV_1
READ-P_1
HOLD
ACTV_0
WRT-P_0
CLK
tRCD
DQ
a
b
c
d
e
f
g
h
DQMx
See Note A
RAS
CAS
W
A13
A12
R0
R1
A11
R0
R1
A10
R0
R1
A0 – A9
R0
C0
R1
C1
CS
CKE
BURST
TYPE
BANK
(0 – 1)
(D/Q)
ROW
ADDR
Q
1
R0
D
0
R1
BURST CYCLE
a
C0†
b
c
d
C0 + 1
C0 + 2
C0 + 3
e
f
g
h
C1
C1 + 1
C1 + 2
C1 + 3
† Column-address sequence depends on programmed burst type and starting addresses C0 and C1 (see Table 5).
NOTES: A. These rising clocks during output “c” with DQMx = Hi do not mask out the output “d” due to CKE inserted low to suspend
those rising clocks at cycle DQMx = Hi.
B. This example illustrates minimum tRCD for the ’664xx4 at 100 MHz.
Figure 42. Use of CKE for Clock Gating (Hold/Suspend) and DQM = Hi Showed No Effect
(CAS latency = 2, burst length = 4, two banks)
52
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A– APRIL 1998 – REVISED JULY 1998
PARAMETER MEASUREMENT INFORMATION
ACTV_1
READ-P_1
HOLD
CLK
tRCD
DQ
a
b
c
d
DQMx
See Note A
RAS
CAS
W
A13
A12
R0
A11
R0
A10
R0
A0 – A9
R0
C0
CS
CKE
BURST
TYPE
BANK
(0 – 1)
(D/Q)
Q
1
ROW
BURST CYCLE
ADDR
a
b
c
d
R0
C0†
C0 + 1
C0 + 2
C0 + 3
† Column-address sequence depends on programmed burst type and starting addresses C0 and C1 (see Table 5).
NOTES: A. This example illustrates that the DQM mask is also delayed when a HOLD/Suspend is in progress.
B. This example illustrates minimum tRCD for the ’664xx4 at 100 MHz.
Figure 43. DQMx Mask Delay As the Hold/Suspend In Progress
(CAS latency = 2, burst length = 4)
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
53
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A– APRIL 1998 – REVISED JULY 1998
device symbolization
TI
-SS
Speed Code (-8, -8A, -10)
TMS664xx4 DGE
Package Code
W
B
Y
M
LLLL
P
Assembly Site Code
Lot Traceability Code
Month Code
Year Code
Die Revision Code
Wafer Fab Code
54
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A– APRIL 1998 – REVISED JULY 1998
MECHANICAL DATA
DGE (R-PDSO-G54)
PLASTIC SMALL-OUTLINE PACKAGE
0.018 (0,45)
0.012 (0,30)
0.031 (0,80)
54
0.006 (0,16) M
28
0.471 (11,96)
0.455 (11,56)
0.404 (10,26)
0.396 (10,06)
1
27
0.006 (0,15) NOM
0.879 (22,32)
0.871 (22,12)
Gage Plane
0.010 (0,25)
0°– 5°
0.024 (0,60)
0.016 (0,40)
Seating Plane
0.047 (1,20) MAX
0.000 (0,00) MIN
0.004 (0,10)
4040070-6/C 12/95
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. Body dimensions do not include mold flash or protrusion.
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
55
IMPORTANT NOTICE
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO
BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TI’s publication of information regarding any third
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright  1998, Texas Instruments Incorporated