TOSHIBA TPCF8001

TPCF8001
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
TPCF8001
Notebook PC Applications
Portable Equipment Applications
•
Unit: mm
Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.)
•
High forward transfer admittance: |Yfs| = 8 S (typ.)
•
Low leakage current: IDSS = 10 μA (max.) (VDS = 30 V)
•
Enhancement mode: Vth = 1.3 to 2.5 V
(VDS = 10 V, ID = 1mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
30
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
7
Pulse
(Note 1)
IDP
28
Drain power dissipation
(t = 5 s)
(Note 2a)
PD
2.5
W
Drain power dissipation
(t = 5 s)
(Note 2b)
PD
0.7
W
Single-pulse avalanche energy (Note 3)
EAS
8
mJ
Avalanche current
IAR
3.5
A
EAR
0.25
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Drain current
Repetitive avalanche energy
(Note 4)
A
JEDEC
―
JEITA
―
TOSHIBA
2-3U1A
Weight: 0.011 g (typ.)
Circuit Configuration
8
7
6
5
1
2
3
4
Note: For Notes 1 to 5, refer to the next page
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
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TPCF8001
Thermal Characteristics
Characteristics
Symbol
Max.
Unit
Thermal resistance, channel to ambient (t = 5 s)
(Note 2a)
Rth (ch-a)
50.0
°C/W
Thermal resistance, channel to ambient (t = 5 s)
(Note 2b)
Rth (ch-a)
178.6
°C/W
Marking (Note 5)
Lot code (month)
Part No.
(or abbreviation code)
Pin #1
Lot No.
F2A
Product-specific code
Lot code
(year)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
(b)
Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 3.5 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: “●” on the lower left of the marking indicates Pin 1.
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TPCF8001
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min.
Typ.
Max.
Unit
IGSS
VGS = ±16 V, VDS = 0 V
⎯
⎯
±10
μA
Drain cut-off current
IDSS
VDS = 30 V, VGS = 0 V
⎯
⎯
10
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
⎯
⎯
V (BR) DSX
ID = 10 mA, VGS = −20 V
15
⎯
⎯
VDS = 10 V, ID = 1mA
1.3
⎯
2.5
VGS = 4.5 V, ID = 3.5 A
⎯
24
31
VGS = 10 V, ID = 3.5 A
⎯
19
23
Drain-source breakdown voltage
Gate threshold voltage
Vth
Drain-source ON resistance
RDS (ON)
Forward transfer admittance
|Yfs|
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
tr
Turn-on time
VDS = 10 V, ID = 3.5 A
8
⎯
1270
⎯
⎯
150
⎯
⎯
190
⎯
ID = 3.5 A
VOUT
⎯
3.8
⎯
⎯
9.4
⎯
⎯
8.4
⎯
⎯
40
⎯
⎯
25.4
⎯
⎯
3.6
⎯
⎯
6.2
⎯
VDS = 10 V, VGS = 0 V, f = 1 MHz
VGS
10 V
ton
0V
4.7 Ω
Switching time
Fall time
4
⎯
RL = 4.3Ω
Gate leakage current
tf
VDD ∼
− 15 V
Turn-off time
toff
Total gate charge
(gate-source plus gate-drain)
Qg
Gate-source charge 1
Qgs1
Gate-drain (“miller”) charge
Qgd
Duty <
= 1%, tw = 10 μs
VDD ∼
− 24 V, VGS = 10 V,
ID = 7.0 A
V
V
mΩ
S
pF
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse
current
Pulse (Note 1)
Forward voltage (diode)
Symbol
Test Condition
Min.
Typ.
Max.
Unit
IDRP
⎯
⎯
⎯
28
A
VDSF
IDR = 7.0 A, VGS = 0 V
⎯
⎯
-1.2
V
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TPCF8001
ID – VDS
ID – VDS
10
3.2
Common source
3
3.5
Common source
3.2
Ta = 25°C
4.5
3.5
Ta = 25°C
4.5
Pulse test
4
8
2.9
(A)
3
2.8
Drain current
Drain current ID
10
ID (A)
5
2
2.7
Pulse test
10
3.1
6
3
2.9
4
2.8
2.7
2
1
2.6
2.6
VGS = 2.5V
0
0
0.2
0.4
0.6
Drain-source voltage
0.8
VDS
0
0
1.0
(V)
VGS = 2.5 V
1
3
2
Drain-source voltage
ID – VGS
4
VDS
VDS – VGS
Common source
Common source
(V)
Pulse test
Ta = 25℃
0.4
Pulse test
VDS
(A)
Drain-source voltage
Drain current ID
VDS = 10 V
6
4
2
100
Ta = −55°C
0.3
0.2
ID = 7 A
0.1
3.5
25
0
0
1
2
1.75
3
Gate-source voltage
4
VGS
0
0
5
(V)
2
4
Common source
VGS
10
(V)
Common source
Ta = 25°C
Pulse test
Ta = −55°C
10
Drain-source ON resistance
RDS (ON) (mΩ)
Forward transfer admittance ⎪Yfs⎪ (S)
8
RDS (ON) – ID
1000
VDS = 10 V
25
100
1
0.1
0.1
6
Gate-source voltage
⎪Yfs⎪ – ID
100
(V)
0.5
10
8
5
1
10
Pulse test
100
4.5
1
0.1
100
Drain current ID (A)
4
VGS = 10 V
10
1
10
Drain current ID (A)
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2007-01-16
TPCF8001
RDS (ON) – Ta
IDR – VDS
100
Common source
Common source
Pulse test
Ta = 25°C
Drain reverse current IDR (A)
Drain-source ON resistance
RDS (ON) ( mΩ)
50
40
ID = 7A,3.5A,1.75A
30
VGS = 4.5 V
20
ID = 7A,3.5A,1.75A
VGS = 10 V
10
Pulse test
10
10
4.5
2
VGS = 0 V
1
0
−80
−40
0
40
80
120
1
0
160
−0.4
Ambient temperature Ta (°C)
−0.8
−1.2
Drain-source voltage
Capacitance – VDS
−1.6
VDS
−2
(V)
Vth – Ta
4
10000
Vth (V)
Coss
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
1
0.1
1
10
Drain-source voltage
VDS
2
Common source
1
ID = 1 mA
Pulse test
0
−80
100
(1) DC
1
(2) t = 5 s
(2) DC
40
80
120
160
120
16
(V)
VDS
1.5
0
0
80
Dynamic input/output characteristics
2
0.5
40
40
(1) Device mounted on a
glass-epoxy board (a) (Note 2a)
(2) Device mounted on a
glass-epoxy board (b) (Note 2b)
(1) t = 5 s
0
Ambient temperature Ta (°C)
Drain-source voltage
Drain power dissipation PD (W)
2.5
−40
(V)
PD – Ta
3
VDS = 10 V
30
6
Ambient temperature Ta (°C)
12
20
8
Common source
ID = 7 A
VGS
Ta = 25°C
10
Pulse test
0
0
160
12
VDD = 24 V
VDS
8
16
24
32
4
VGS (V)
10
Crss
3
Gate-source voltage
100
Gate threshold voltage
Capacitance C
(pF)
Ciss
1000
0
40
Total gate charge Qg (nC)
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TPCF8001
rth – tw
1000
Device mounted on a glass-epoxy board (b) (Note 2b)
Transient thermal
impedance rth (°C/W)
100
Device mounted on a glass-epoxy board (a) (Note 2a)
10
1
0.1
1m
10 m
100 m
1
Pulse width
10
100
1000
tw (s)
Safe operating area
100
Drain current ID
(A)
ID max (pulse)*
1 ms*
10
10 ms*
1
* Single pulse
Ta = 25°C
Curves must be derated linearly
with increase in temperature.
0.1
0.1
VDSS max
1
Drain-source voltage
10
100
VDS (V)
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TPCF8001
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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