TPCP8101 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) TPCP8101 Notebook PC Applications Portable Equipment Applications Unit: mm 0.33±0.05 0.05 M A Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 24 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.) • Low leakage current: IDSS = -10 μA (max) (VDS = -20 V) • Enhancement model: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -200 μA) 2.4±0.1 • 0.475 1 4 B 0.65 2.9±0.1 2.8±0.1 5 8 0.05 M B A 0.8±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS -20 V Drain-gate voltage (RGS = 20 kΩ) VDGR -20 V Gate-source voltage VGSS ±8 (Note 1) ID -5.6 Pulse (Note 1) IDP -22.4 Drain power dissipation (t = 5 s) (Note 2a) PD 1.68 W Drain power dissipation (t = 5 s) (Note 2b) PD 0.84 W Single-pulse avalanche energy (Note 3) EAS 20.3 mJ Avalanche current IAR -5.6 A EAR 0.168 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Repetitive avalanche energy (Note 4) S 0.28 +0.1 -0.11 0.17±0.02 +0.13 1.12 -0.12 1.12 +0.13 -0.12 0.28 +0.1 -0.11 1. Source 2. Source 3. Source 4. Gate V DC Drain current 0.025 S A 5. Drain 6. Drain 7. Drain 8. Drain JEDEC ⎯ JEITA ⎯ TOSHIBA 2-3V1K Weight: 0.017 g (typ.) Note: For Notes 1 to 5, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. Circuit Configuration 8 7 Marking (Note 5) 6 5 8 7 6 5 8101 ※ 1 2 3 1 4 2 3 4 Lot No. 1 2006-11-17 TPCP8101 Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Rth (ch-a) 74.4 °C/W Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Rth (ch-a) 148.8 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = -16 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = -5.6 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature. Note 5: • on the lower left of the marking indicates Pin 1. * Weekly code (three digits): Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-11-17 TPCP8101 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±8 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cutoff current IDSS VDS = -20 V, VGS = 0 V ⎯ ⎯ -10 μA V (BR) DSS ID = -10 mA, VGS = 0 V -20 ⎯ ⎯ V (BR) DSX ID = -10 mA, VGS = 8 V -12 ⎯ ⎯ VDS = -10 V, ID = -200 μA -0.5 ⎯ -1.2 VGS = -1.8 V, ID = -1.4 A ⎯ 67 90 VGS = -2.5 V, ID = -2.8 A ⎯ 36 41 VGS = -4.5 V, ID = -2.8 A ⎯ 24 30 VDS = -10 V, ID = -2.8 A 7 14 ⎯ ⎯ 1550 ⎯ ⎯ 215 ⎯ ⎯ 265 ⎯ ⎯ 7 ⎯ ⎯ 13 ⎯ ⎯ 21 ⎯ ⎯ 68 ⎯ ⎯ 19 ⎯ ⎯ 14 ⎯ ⎯ 5 ⎯ Gate threshold voltage Vth Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time tr Turn-on time ton VDS = -10 V, VGS = 0 V, f = 1 MHz VGS -5 V 4.7 Ω Switching time Fall time ID = -2.8 A 0V RL = 3.57 Ω Drain-source breakdown voltage tf VOUT VDD ∼ − -10 V Turn-off time toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain (“Miller”) charge Qgd Duty < = 1%, tw = 10 μs VDD ∼ − -16 V, VGS = -5 V, ID = -5.6 A V V mΩ S pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Pulse (Note 1) Forward voltage (diode) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ -22.4 A VDSF IDR = -5.6 A, VGS = 0 V ⎯ ⎯ 1.2 V 3 2006-11-17 TPCP8101 ID – VDS −2.5 −1.9 −1.8 −3 −3 −2 −1.6 ID −4 −1.5 VGS = −1.4 V −1 −0.4 −0.6 −0.8 Drain−source voltage VDS −8 −1.9 −5 −1.8 −6 −1.7 −4 −1.6 −1.5 −2 VGS = −1.4 V Common source Ta = 25°C Pulse test −0.2 Common source Ta = 25°C Pulse test −2 −3 −4 −2 −4.5 0 0 −2.5 −1.7 (A) −4 −5 ID – VDS −10 Drain current Drain current ID (A) −5 0 0 −1.0 −1 (V) −2 VDS (V) Drain−source voltage (A) ID Drain current Ta = 25°C Ta = −55°C −2 Ta = 100°C −0.5 −1.0 −1.5 −2.0 Gate−source voltage Common source Ta = 25°C Pulse test －0.4 －0.3 －0.2 ID=－5.6A I －0.1 －2.8A －1.4A VGS −2.5 0 －2 (V) －4 Drain−source ON-resistance RDS (ON) (mΩ) (S) |Yfs| Forward transfer admittance Ta = −55°C Ta = 25°C 10 Ta = 100°C 1 0.1 −0.1 −1 Drain current −10 ID VGS －10 (V) RDS (ON) – ID 1000 Common source VDS = −10 V Pulse test －8 －6 Gate−source voltage |Yfs| – ID 100 (V) 0 0 0 −5 VDS – VGS −6 −4 VDS －0.5 Common source VDS = −10 V Pulse test −8 −4 Drain−source voltage ID – VGS −10 −3 Common source Ta = 25°C Pulse test −2.5 V VGS = −4.5 V 10 1 −0.1 −100 (A) −1.8 V 100 −1 Drain current 4 −10 ID −100 (A) 2006-11-17 TPCP8101 RDS (ON) – Ta IDR – VDS −100 160 (A) Common source Pulse test Ta = 25°C Pulse test IDR 120 −2.8 A VGS = −1.8 V −5.6 A ID = −1.4 A ID = −1.4, −2.8 A −2.5 V ID = −1.4, −2.8, −5.6 A 0 −80 −40 0 40 80 Ambient temperature 120 Ta −1.8 V −1 V VGS = 0 V −1 0 160 0.4 0.8 Drain−source voltage (°C) C – VDS 10000 Vth (V) Gate threshold voltage 1000 Capacitance C (pF) Ciss Coss Crss 100 1.5 10 Drain−source voltage −40 VDS 0 40 120 Ambient temperature Ta VDS (V) glass-epoxy board (a) 1.5 (2) Device mounted on a Drain−source voltage glass-epoxy board (b) (Note 2b) (1) DC 1.0 (2) t = 5 s 0.5 (2) DC 40 80 Ambient temperature 120 Ta −16 Common source 160 ID = −5.6 A VDS Ta = 25°C −12 5 −16 −12 VGS −8 −8 −4 V VDD = −16 V −4 −4 −8 V 8 16 Total gate charge (°C) −20 Pulse test 0 0 0 0 (°C) Dynamic input/output characteristics −20 (1) t = 5 s 160 (V) (1) Device mounted on a (W) PD 80 0.5 100 (Note 2a) Drain power dissipation (V) Common source VDS = −10 V ID = −200 μA Pulse test PD – Ta 2.0 VDS 2 1.0 0 −80 1.0 1.6 Vth – Ta 2.0 VGS = 0 V f = 1 MHz Ta = 25°C 10 0.1 1.2 (V) −4.5 V −2.0 V −4 V 24 Qg 32 VGS 40 −10 Gate−source voltage 80 Drain reverse current Drain−source ON-resistance RDS (ON) (mΩ) Common source 0 40 (nC) 2006-11-17 TPCP8101 (°C/W) rth(j−c) − tw 1000 rth Device mounted on a glassepoxy board (b) (Note 2b) Transient thermal impedance 100 Device mounted on a glassepoxy board (a) (Note 2a) 10 Single pulse 1 0.001 0.1 0.01 1 Pulse width 10 tw 100 1000 (s) Safe operating area − 100 ID max (pulse)* − 10 Drain current ID (A) 1 ms* 10 ms* −1 − 0.1 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. − 0.1 −1 VDSS max − 10 − 100 Drain−sour 6 2006-11-17 TPCP8101 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2006-11-17