TI TPS54290PWP

TPS54290, TPS54291, TPS54292
www.ti.com
SLUS973 – OCTOBER 2009
1.5-A/2.5-A Dual, Fully-Synchronous Buck Converter With Integrated MOSFET
Check for Samples :TPS54290 TPS54291 TPS54292
FEATURES
APPLICATIONS
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1
2
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4.5 V to 18 V Input Range
Output Voltage Range 0.8 V to DMAX × VIN
Fully Integrated Dual Buck, 1.5 A/2.5 A
Three Fixed Switching Frequency Versions:
– TPS54290 – 300 kHz
– TPS54291 – 600 kHz
– TPS54292 – 1.2 MHz
Integrated UVLO
0.8 VREF With 1% Accuracy (0°C to 85°C)
Internal Soft-Start
– TPS54290 – 5.2 ms
– TPS54291 – 2.6 ms
– TPS54292 – 1.3 ms
Dual PWM Outputs 180° Out-of-Phase
Dedicated Enable for Each Channel
Current Mode Control for Simplified
Compensation
External Compensation
Pulse-by-Pulse Overcurrent Protection,
2.2 A/3.8 A Overcurrent Limit
Integrated Bootstrap Switch
Thermal Shutdown Protection at 145°C
16-Pin PowerPAD™ HTSSOP Package
Set Top Box
Digital TV
Power for DSP
Consumer Electronics
DESCRIPTION
TPS54290/1/2 is a dual output fully synchronous buck
converter capable of supporting applications with a
minimal number of external components. It operates
from a 4.5 V to 18 V input supply voltage, and
supports output voltages as low as 0.8 V and as high
as 90% of the input voltage.
Both high-side and low-side MOSFETs are integrated
to provide fully synchronous conversion with higher
efficiency. Channel1 can provide up to 1.5 A of
continuous current, meanwhile, Channel2 supports
up to 2.5 A.
Current mode control simplifies the compensation.
The external compensation adds flexibility for the
user to choose different type of output capacitors.
180° out-of-phase operation reduces the ripple
current through the input capacitor, providing the
benefit of reducing input capacitance, alleviating EMI
and increasing capacitor life.
VIN
TPS54290
1
PVDD1
PVDD2 16
2
BOOT1
BOOT2 15
3
SW1
4
PGND1
5
EN1
BP 12
6
EN2
GND 11
7
FB1
FB2 10
8
COMP1 COMP2
GND
VOUT2
VOUT1
SW2 14
PGND2 13
9
UDG-09130
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerPAD is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009, Texas Instruments Incorporated
TPS54290, TPS54291, TPS54292
SLUS973 – OCTOBER 2009
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ORDERING INFORMATION
ORDERABLE
DEVICE
NUMBER
TJ
OPERATING
FREQUENCY
(kHz)
TPS54290PWP
300
TPS54290PWPR
–40°C to 145°C
PACKING
MEDIA
PACKAGE
TPS54291PWP
600
TPS54291PWPR
TPS54292PWP
16-Pin
HTTSOP
1200
TPS54292PWPR
PACKING
QUANTITY
Tube
90
Tape and Reel
2500
Tube
90
Tape and Reel
2500
Tube
90
Tape and Reel
2500
ABSOLUTE MAXIMUM RATINGS (operating in a typical application circuit)
over operating free-air temperature range, all voltages are with respect to GND (unless otherwise noted)
VALUE
PVDD1, PVDD2, EN1, EN2
UNIT
–0.3 to 20
SW1, SW2
–1 to 20
BOOT1, BOOT2
–0.3 to SW+7
SW1, SW2 transient (< 50 ns)
V
–3 to 20
BP
7
FB1, FB2
–0.3 to 3
Operating junction temperature
–40 to 145
Storage junction temperature
–55 to 155
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
PACKAGE DISSIPATION RATINGS (1)
°C
260
(2) (3)
PACKAGE
THERMAL IMPEDANCE
JUNCTION TO THERMAL PAD
TA = 25°C
POWER RATING
TA = 85°C
POWER RATING
16 Pin HTSSOP (PWP)
2.07°/W
1.6 W
1.0 W
(1)
(2)
(3)
For more information on the PWP package, refer to TI technical brief (SLMA002A)
TI device packages are modeled and tested for thermal performance using PWB designs outlined in JEDEC standards JESD 51-3 and
JESD 51-7.
For Application information see Power Derating section
RECOMMENDED OPERATING CONDITIONS
MIN
MAX
VDD
Input voltage
4.5
18
UNIT
V
TJ
Junction temperature
–40
125
°C
MIN
UNIT
ELECTROSTATIC DISCHARGE (ESD) PROTECTION
PARAMETER
Human Body Model
CDM
2
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2k
V
1.5k
V
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ELECTRICAL CHARACTERISTICS
TJ = –40°C to 125°C, PVDD1 and 2 = 12V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INPUT SUPPLY
PVDD1, PVDD2
Input voltage range
18
V
IDDSDN
Shutdown current
EN1=EN2 = PVDD2 (4.5-18V)
80
160
µA
IDDQ
Quiescent, non-switching
FB1 = FB2 = 1 V, Outputs Off
1.65
3.00
mA
IDDSW
Quiescent, while switching
FB1 = FB2 = 0.75V, measured at BP
UVLO
Minimum turn-on voltage
PVDD2 only
UVLOHYS
Hysteresis
(1) (2)
tstart
4.5
Time from startup to soft start
begin
10
3.8
CBP=10µF, EN1 and EN2 go low
simultaneously
mA
4.1
4.4
V
460
600
mV
1.5
ms
ENABLE (ACTIVE LOW)
Enable threshold voltage
V ENx
0.9
Hysteresis
I ENx
Enable pull-up current
BP
Regulator voltage
8 V ≤ VPVDD2 ≤ 18 V
BPLDO
Dropout voltage
VPVDD2 = 4.5 V
IBPS
Regulator short current
4.5 V ≤ VPVDD2 ≤ 18 V
V
mV
10
Other enable pin = GND
(1)
1.5
70
Time from enable to soft-start
begin
t ENx
1.2
10
µA
µs
BP REGULATOR
5.0
5.2
5.6
V
400
mV
25
mA
OSCILLATOR
fSW
Oscillator frequency
tDEAD
(1)
TPS54290
260
300
360
TPS54291
520
600
720
TPS54292
1040
1200
1440
Clock dead time
140
kHz
kHz
ns
gMTRANSCONDUCTANCE AMPLIFIER AND VOLTAGE REFERENCE (Applies to both channels)
0°C < TJ < 85°C
792
800
808
mV
–40ºC < TJ < 125°C
786
800
812
mV
5
50
nA
200
325
450
µS
15
30
40
µA
15
30
40
µA
TPS54290 0 V ≤ VFB ≤ 0.8 V
4.0
5.2
6.0
TPS54291
2.0
2.6
3.0
TPS54292
1.0
1.3
1.6
1.8
2.2
2.6
3.2
3.8
4.6
VFB
Feedback input voltage
IFB
Feedback Input bias current
gM
(1)
VFB=0.8 V
Transconductance
ISOURCE
Error amplifier source current
capability
VFB1=VFB2=0.7 V, VCOMP=0 V
ISINK
Error amplifier sink current
capability
VFB1=VFB2=0.9 V, VCOMP=2 V
SOFT-START (Applies to both channels)
tSS
Soft-start time
ms
OVERCURRENT PROTECTION
ICL1
Current limit CH1
ICL2
Current limit CH2
THICCUP
(1)
Hiccup timeout
TPS54290
30
TPS54291
16
TPS54292
tONOC
(1)
(2)
(1)
Minimum overcurrent pulse
A
A
ms
8
150
200
ns
Specified by design. Not tested in production.
When both outputs are started simultaneously, a 20-mA current source charges the BP capacitor. Faster times are possible with a lower
BP capacitor value. See Input UVLO and Startup.
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ELECTRICAL CHARACTERISTICS (continued)
TJ = –40°C to 125°C, PVDD1 and 2 = 12V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
BOOTSTRAP (Applied to both channels)
RBOOT
Bootstrap switch resistance
R(BP to BOOT), I external = 10 mA
Ω
33
PGOOD
VUV
VPG-HYST
(3)
Feedback voltage limit for PGOOD
660
PGOOD hysteresis voltage on FB
40
730
mV
mV
OUTPUT STAGE (Applied to both channels)
RDS(on1)(HS) (3)
On resistance of high-side FET
and bondwire on CH1
170
265
mΩ
RDS(on2)(HS) (3)
On resistance of high-side FET
and bondwire on CH2
120
190
mΩ
RDS(on1)(LS) (3)
On resistance of low-side FET and
bondwire on CH1
120
190
RDS(on2)(LS) (3)
On resistance of low-side FET and
bondwire on CH2
90
150
tON_MIN
(3)
Miimum controllable pulse width
Minimum duty
cycle
tDEAD
(3)
VFB = 0.9 V
Output driver dead time
DMAX
150
Maximum duty cycle
mΩ
mΩ
ns
0%
HDRV off to LDRV on
20
ns
LDRV off to HDRV on
20
ns
TPS54290
90%
96%
TPS54291
85%
91%
TPS54292
78%
82%
THERMAL SHUTDOWN
TSD
(3)
Shutdown temperature
TSD_HYS
(3)
4
(3)
Hysteresis
145
°C
20
°C
Specified by design. Not tested in production.
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TYPICAL PERFORMANCE CHARACTERISTICS
QUIESCENT CURRENT
vs
TEMPERATURE
SHUTDOWN CURRENT
vs
TEMPERATURE
1.75
140
Non-Switching
120
ISD – Shutdown Current – mA
IDDQ – Quiescent Current – mA
1.70
1.65
1.60
VIN = 18 V
100
80
VIN = 12 V
60
40
1.55
VIN = 4.5 V
20
0
–40 –25 –10 5 20 35 50 65 80 95 110 125
TJ – Junction Temperature – °C
Figure 1.
Figure 2.
UVLO TURN-ON AND TURN-OFF THRESHOLDS
vs
TEMPERATURE
ENx TURN ON AND OFF THRESHOLD
vs
TEMPERATURE
4.2
1.26
4.1
1.24
VEN – Enable Voltage Threshold – V
VUVLO – Undervoltage Lockout Threshold Voltage – V
1.50
–40 –25 –10 5 20 35 50 65 80 95 110 125
TJ – Junction Temperature – °C
UVLO ON
1.22
4.0
1.20
3.9
Enable OFF
1.18
3.8
Enable ON
1.16
UVLO OFF
3.7
1.14
3.6
–40 –25 –10 5 20 35 50 65 80 95 110 125
TJ – Junction Temperature – °C
1.12
–40 –25 –10 5 20 35 50 65 80 95 110 125
TJ – Junction Temperature – °C
Figure 3.
Figure 4.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
SOFT START TIME
vs
TEMPERATURE
OSCILLATOR FREQUENCY
vs
TEMPERATURE
1.4
6
tSS – Soft-Start Time – ms
4
fSW = 300 kHz
fSW = 600 kHz
3
2
fSW – Switching Frequency – MHz
1.2
5
1
fSW = 1.2 MHz
fSW = 600 kHz
0.8
0.6
0.4
0.2
fSW = 300 kHz
0
–40 –25 –10 5 20 35 50 65 80 95 110 125
TJ – Junction Temperature – °C
fSW = 1.2 MHz
0
–40 –25 –10 5 20 35 50 65 80 95 110 125
TJ – Junction Temperature – °C
Figure 5.
Figure 6.
FEEDBACK VOLTAGE
vs
TEMPERATURE
CURRENT LIMIT
vs
TEMPERATURE
808
4.50
806
4.25
804
4.00
IILIMx – Current Limit – A
VFB – Feedback Voltage – mV
1.0
Channel2
3.75
802
3.50
800
3.25
798
3.00
796
2.75
794
Channel1
792
2.50
790
2.25
788
–40 –25 –10 5 20 35 50 65 80 95 110 125
TJ – Junction Temperature – °C
2.00
–40 –25 –10 5 20 35 50 65 80 95 110 125
TJ – Junction Temperature – °C
Figure 7.
6
Figure 8.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
BP VOLTAGE
vs
TEMPERARURE
SW NODE LEAKAGE CURRENT
vs
TEMPERATURE
5.20
9
VBP – BP Regulation Voltage – V
ISW(off) – Switch-Node Current – mA
8
5.15
5.10
5.05
VVDD = 12 V
5.00
–40 –25 –10 5 20 35 50 65 80 95 110 125
TJ – Junction Temperature – °C
7
6
5
4
3
2
1
0
-1
–40 –25 –10 5 20 35 50 65 80 95 110 125
TJ – Junction Temperature – °C
Figure 9.
Figure 10.
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DEVICE INFORMATION
HTSSOP (PWP)
(Top View)
PVDD1
1
16 PVDD2
BOOT1
2
15 BOOT2
SW1
3
14 SW2
PGND1
4
13 PGND2
EN1
5
12 BP
EN2
6
11 GND
FB1
7
COMP1
8
10 FB2
Thermal Pad
(bottom side)
9 COMP2
PIN FUNCTIONS
PIN
NAME
NO.
BOOT1
2
I/O
DESCRIPTION
I
Input supply to the high-side gate driver for Output1. Connect a 22 nF to 68 nF capacitor from this pin to
SW1. This capacitor is charged from the BP pin voltage through an internal switch. The switch is turned ON
during the off time of the converter. To slow down the turn ON of the internal FET, a small resistor (2 Ω to 5
Ω) may be placed in series with the bootstrap capacitor.
BOOT2
15
I
Input supply to the high-side gate driver for Output2. Connect a 22 nF to 68 nF capacitor from this pin to
SW2. This capacitor is charged from the BP pin voltage through an internal switch. The switch is turned ON
during the off time of the converter. To slow down the turn ON of the internal FET, a small resistor (2 Ω to 5
Ω) may be placed in series with the bootstrap capacitor.
BP
12
–
Regulated voltage to charge the bootstrap capacitors. Bypass this pin to GND with a low-ESR 4.7-µF (10-µF
preferred) ceramic capacitor.
EN1
5
I
Active-low enable input for Output1. If the voltage on this pin is greater than 1.5 V, Output1 is disabled
(high-side switch is OFF). A voltage of less than 0.9 V enables Output1 and allow soft start of Output1 to
begin. An internal current source drives this pin to PVDD2 if left floating. Connect this pin to GND to bypass
the enable function.
EN2
6
I
Active-low enable input for Output2. If the voltage on this pin is greater than 1.5 V, Output2 is disabled
(high-side switch is OFF). A voltage of less than 0.9 V enables Output2 and allow soft-start of Output2 to
begin. An internal current source drives this pin to PVDD2 if left floating. Connect this pin to GND to bypass
the enable function.
FB1
7
I
FB2
10
I
COMP1
8
O
COMP2
9
O
PGND1
4
–
PGND2
13
–
Power ground for Outputx. It is separated from GND to prevent the switching noise coupled to the internal
logic circuits.
GND
11
–
Analog ground pin for the device.
PVDD1
1
I
Power input to the Output1 high-side MOSFET only. This pin should be locally bypassed to PGND1 with a
low ESR ceramic capacitor of 10 µF or greater. PVDD1 and PVDD2 could be tied externally together.
PVDD2
16
I
The PVDD2 pin provides power to the device control circuitry, provides the pull-up for the EN1 and EN2 pins
and provides power to the Output2 high-side MOSFET. This pin should be locally bypassed to PGND2 with
a low ESR ceramic capacitor of 10 µF or greater. The UVLO function monitors PVDD2 and enables the
device when PVDD2 is greater than 4.2 V.
SW1
3
O
Source (switching) output for Output1 PWM.
SW2
14
O
Source (switching) output for Output2 PWM.
–
This pad must be tied externally to a ground plane.
Thermal Pad
8
Voltage feedback pin for Outputx. The internal transconductance error amplifier adjusts the PWM for Outputx
to regulate the voltage at this pin to the internal 0.8 V reference. A series resistor divider from Outputx to
ground, with the center connection tied to this pin, determines the value of the regulated output voltage.
Output of the transconductance (gM) amplifier. A R-C compensation network is connected from COMPx to
GND.
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BLOCK DIAGRAM
BP
f(IDRAIN1) + DC(ofst)
Current
Comparator
FET
Switch
CLK1
+
COMP1
8
f(IDRAIN1)
FB1
+
R
R
Q
1
PVDD1
IDRAIN1
3
SW1
4
PGND1
BP
Overcurrent Comp
f(ISLOPE1)
Soft Start
1
Q
BOOT1
+
7
0.8 VREF
S
2
f(IMAX1)
CLK1
Anti-Cross
Conduction
SD1
TSD
10 mA
(max)
EN1
EN2
10 mA
(max)
5
SD1
Internal
Control
6
f(ISLOPE1)
Ramp
Gen 1
SD2
UVLO
FB1
FB2
2.4 MHz
Oscilator
CLK1
Divide by
2/4/8
f(ISLOPE2)
Ramp
Gen 2
Output
Undervoltage
Detect
CLK2
PVDD2
BP 12
5.25-V
Regulator
References
GND 11
BP
15 BOOT2
f(IDRAIN2) + DC(ofst)
Current
Comparator
16 PVDD2
FET
Switch
CLK2
+
COMP2
9
f(IDRAIN2)
FB2 10
0.8 VREF
+
Q
R
R
Q
IDRAIN2
14 SW2
+
BP
Overcurrent Comp
f(ISLOPE2)
Soft Start
2
S
f(IMAX2)
SD2
CLK2
Anti-Cross
Conduction
13 PGND2
FET
Switch
UDG-09124
Figure 11. Block Diagram
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APPLICATION INFORMATION
FUNCTIONAL DESCRIPTION
The TPS54290/1/2 is a dual output fully synchronous buck converter. Each PWM channel contains an error
amplifier, current mode pulse width modulator (PWM), switching and rectifying MOSFETs, enable, and fault
protection circuitry. Common to the two channels are the internal voltage regulator, voltage reference, and clock
oscillator.
VOLTAGE REFERENCE
The band gap cell common to both outputs, trimmed to 800 mV. The reference voltage is 1% accurate in the
temperature range from 0°C to 85°C.
OSCILLATOR
The oscillator frequency is internally fixed at 2.4 MHz which is divided by 8/4/2 to generate the ramps for
TPS54290/1/2 respectively. The two outputs are internally configured to operate on alternating switch cycles (i.e.,
180° out-of-phase).
INPUT UVLO AND STARTUP
When the voltage at the PVDD2 pin is less than 4.4 V, a portion of the internal bias circuitry is operational, and
all other functions are held OFF. All of the internal MOSFETs are also held OFF. When the PVDD2 voltage rises
above the UVLO turn on threshold, the state of the enable pins determines the remainder of the internal startup
sequence. If either output is enabled (ENx pulled low), the BP regulator turns on, charging the BP capacitor with
a 20 mA current. When the BP pin is greater than 4 V, PWM is enabled and soft-start commences.
Note that the internal regulator and control circuitry are powered from PVDD2. The voltage on PVDD1 may be
higher or lower than PVDD2.
ENABLE AND TIMED TURN ON OF THE OUTPUTS
Each output has a dedicated (active low) enable pin. If left floating, an internal current source pulls the pin to
PVDD2. By grounding, or by pulling the ENx pin to below approximately 1.25 V with an external circuit, the
associated output is enabled and soft-start is initiated.
If both enable pins are left in the “high” state, the device operates in a shutdown mode, where the BP regulator is
shut down and minimal house keeping functions are active. The total standby current from both PVDD pins is
80 µA at 12 V input supply.
An R-C connect to an ENx pin may be used to delay the turn on of the associated output after power is applied
to PVDDx (see Figure 12). After power is applied to PVDD2, the voltage on the ENx pin slowly decays towards
ground. Once the voltage decays to approximately 1.25 V, then the output is enabled and the startup sequence
begins. If it is desired to enable the outputs of the device immediately upon the application of power to the
PVDD2 pin, then omit these two components and tie the ENx pin to GND directly.
If an R-C circuit is used to delay the turn on of the output, the resistor value must be an order of magnitude less
than 1.25 V/10 µA or 120 kΩ. A suggested value is 51 kΩ. This allows the ENx voltage to decay below the 1.25
V threshold while the 10-µA bias current flows.
The time to start (after the application of PVDD2) is
æ VTH - I
´R ö
ENx
÷ (s )
tSTART = -R ´ C ´ ln ç
ç VIN - 2 ´ Iuuuuur ´ R ÷
ENx
è
ø
(
)
(1)
where
•
•
•
R and C are the timing components
VTH is the 1.25 V enable threshold voltage
IEN is the 10-µA maximum enable pin biasing current
Figure 12 and Figure 13 illustrate startup delay with an R-C filter on the enable pin(s).
10
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PVDD2
10 mA (max)
ENx
C
+
PVDDx
R
PVDDx
1.25 V
1.25-V
Threshold
TPS5429x
UDG-09125
ENxB
VOUTx
Time
0
Figure 12. Startup Delay Schematic
tDELAY
tDELAY + tSS
Figure 13. Startup Delay Timing Diagram
NOTE
If delayed output voltage startup is not necessary, simply connect EN1 and EN2 to
GND. This allows the outputs to “start” immediately on the valid application of PVDD2.
If ENx is allowed to go “high” after the outputx has been in regulation, the upper and
lower MOSFETs shut off, and the output decays at a rate determined by the output
capacitor and the load.
SOFT START
Each output has a dedicated soft start circuit. The soft start voltage is an internal digital reference ramp to one of
the two non-inverting inputs of the error amplifier. The other input is the internal precise 0.8-V reference. The
total ramp time for the FB voltage to charge from 0 V to 0.8 V is about 5.2 ms, 2.6 ms and 1.3 ms for
TPS54190/1/2 respectively. During a soft start interval, the TPS5429x output slowly increases the voltage to the
non-inverting input of the error amplifier. In this way, the output voltage slowly ramps up until the voltage on the
non-inverting input to the error amplifier reaches the internal 0.8V reference voltage. At that time, the voltage at
the non-inverting input to the error amplifier remains at the reference voltage.
During the soft-start interval, pulse-by-pulse current limiting is in effect. If an over-current pulse is detected, six
PWM pulses is skipped to allow the inductor current to decay before another PWM pulse is applied (See Output
Overload Protection). There is no pulse skipping if a current limit pulse is not detected.
If the rate of rise of the input voltage (PVDDx) is such that the input voltage is too low to support the desired
regulation voltage by the time soft-start has completed, then the output UV circuit may trip and cause a hiccup in
the output voltage. In this case, use a timed delay startup from the ENx pin to delay the startup of the output until
the PVDDx voltage has the capability of supporting the desired regulation voltage.
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OUTPUT VOLTAGE REGULATION
The regulation output voltage is determined by a resistor divider connecting the output node, the FBx pin, and
GND (Figure 14). The value of the output voltage is shown in Equation 2.
R1 ö
æ
VOUT = VREF ´ ç 1 +
÷ (V )
è R2 ø
(2)
where
•
VREF is the internal 0.8-V reference voltage
TPS54290
1
PVDD1
PVDD2 16
2
BOOT1
BOOT2 15
3
SW1
4
PGND1
5
EN1
BP 12
6
EN2
GND 11
7
FB1
FB2 10
8
COMP1
VOUT1
R1
R2
SW2 14
PGND2 13
COMP2
9
UDG-09131
Figure 14. Feedback Network for Channel1
INDUCTOR SELECTION
Equation 3 calculates the inductance value so that the output ripple current falls from 20% to 40% of the full load
current.
V - V OUT
L = IN
DIOUT
(3)
12
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MAXIMUM OUTPUT CAPACITANCE
With internal pulse-by-pulse current limiting and a fixed soft-start time, there is a maximum output capacitance
which may be used before startup problems begin to occur. If the output capacitance is large enough so that the
device enters a current-limit protection mode during startup, then there is a possibility that the output never
reaches regulation. Instead, the TPS5429x simply shuts down and attempts a restart as if the output were
short-circuited to ground. The maximum output capacitance (including bypass capacitance distributed at the
load) is given by
C OUT(max) =
æ
t SS
æI
öö
´ ç ILIM - ILOAD - ç RIPPLE ÷ ÷
VOUT è
2
è
øø
(4)
where
•
•
tSS is the soft start time
ILIM is the current limit level
FEEDBACK LOOP COMPENSATION
In the feedback signal path, the output voltage setting divider is followed by an internal gM-type error amplifier
with a typical transconductance of 325 µS. An external series connected R-C circuit from the gM amplifier output
(COMPx pin) to ground serves as the compensation network for the converter. The signal from the error amplifier
output is then buffered and combined with a slope compensation signal before it is mirrored to be referenced to
the SW node. Here, it is compared with the current feedback signal to create a pulse-width-modulated (PWM)
signal-fed to drive the upper MOSFET switch. A simplified equivalent circuit of the signal control path is depicted
in Figure 15.
NOTE
Noise coupling from the SWx node to internal circuitry of BOOTx may impact narrow
pulse width operation, especially at load currents less than 1 A.
BP
ICOMP – ISLOPE
Error
Amplifier
FB
0.8 VREF
+
PWM to
Switch
x2
ISLOPE
+
ICOMP
Offset
f(IDRAIN)
COMP
GND
11.5 kW
RCOMP
CCOMP
UDG-09128
Figure 15. Feedback Loop Equivalent Circuit
A more conventional small-signal equivalent block diagram is shown in Figure 16. Here, the full closed-loop
signal path is shown. Because the TPS5429x contains internal slope compensation, the external L-C filter must
be selected appropriately so that the resulting control loop meets criteria for stability.
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V IN
VREF
VC
+
VOUT
+
Modulator
_
_
Filter
Current
Feedback
Network
Compensation
Network
Figure 16. Small Signal Equivalent Block Diagram
To determine the components necessary for compensating the feedback loop, the controller frequency response
characteristics must be understood and the desired crossover frequency selected. The best results are obtained
if 10% of the switching frequency is used as this closed loop crossover frequency. In some cases, up to 20% of
the switching frequency is also possible.
With the output filter components selected, the next step is to calculate the DC gain of the modulator. For
TPS5429x:
fSW
FM TPS5429x =
æ
æ (V - VOUT ) ö ö
K ´t
ç 19.7 ´ e( ON ) + 95 ´ 10 -6 ´ ç IN
÷÷ ÷
ç
ç
÷
L
è
øø
è
(5)
where
•
•
•
K = 5.6 ×105 for TPS54290
K = 1.5 × 106 for TPS54291
K = 3.6 × 106 for TPS54292
The overall DC gain of the converter control-to-output transfer function is approximated Equation 6.
fC =
VIN ´ FM ´ 2 ´ 10 -4
(
æ æ V ´ FM ´ 95 ´ 10 -6
ç ç IN
ç1 + ç
2 ´ RLOAD
ç ç
è è
)ö÷ ö÷
÷÷
÷÷
øø
(6)
The next step is to find the desired gain of the error amplifier at the desired crossover frequency. Assuming a
single-pole roll-off, us Equation 6 to evaluate the following expression at the desired crossover frequency.
æ
ö
fC
÷
KEA = -20 ´ log ç
ç 1 + 2 ´ p ´ fCO ´ (2 ´ RLOAD )´ COUT ÷
è
ø
(7)
(
)
where
•
14
ƒCO is the desired crossover frequency
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TPS54290
VOUT1
ZUPPER
C1
(Optional)
C2
(Optional)
R1
R2
1
PVDD1
PVDD2 16
2
BOOT1
BOOT2 15
3
SW1
4
PGND1
5
EN1
BP 12
6
EN2
GND 11
7
FB1
FB2 10
8
COMP1
SW2 14
PGND2 13
COMP2
9
RCOMP
CCOMP
ZLOWER
UDG-09129
Figure 17. Loop Compensation Network
If operating at wide duty cycles (over 50%), a capacitor may be necessary across the upper resistor of the
voltage setting divider. If duty cycles are less than 50%, this capacitor may be omitted.
L ´ COUT
C1 =
R1
(8)
If a high ESR capacitor is used in the output filter, a zero appears in the loop response that could lead to
instability. To compensate, a small capacitor is placed in parallel with the lower voltage setting divider resistor.
The value of the capacitor is determined such that a pole is placed at the same frequency as the ESR zero. If
low ESR capacitors are used, this capacitor may be omitted.
ESR ´ (R1 + R2 )
C2 = COUT ´
(R1´ R2 )
(9)
Next, calculate the value of the error amplifier gain setting resistor and capacitor using Equation 10.
RCOMP =
CCOMP =
10
KEA
20
´ (ZLOWER + ZUPPER )
gM ´ ZLOWER
(10)
1
2 ´ p ´ fPOLE ´ RCOMP
(11)
where
fPOLE =
•
1
2 ´ p ´ (2 ´ RLOAD )´ COUT
NOTE
Once the filter and compensation component values have been established,
laboratory measurements of the physical design should be performed to confirm
converter stability.
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BOOTSTRAP FOR N-CHANNEL MOSFET
A bootstrap circuit provides a voltage source higher than the input voltage and of sufficient energy to fully
enhance the switching MOSFET each switching cycle. The PWM duty cycle is limited to maximum, i.e., 90% for
TPS54291, allowing an external bootstrap capacitor to charge through an internal synchronous switch (between
BP and BOOTx) during every cycle. When the PWM switch is commanded to turn ON, the energy used to drive
the MOSFET gate is derived from the voltage on this capacitor.
Because this is a charge transfer circuit, care must be taken in selecting the value of the bootstrap capacitor. It
must be sized such that the energy stored in the capacitor on a per cycle basis is greater than the gate charge
requirement of the MOSFET being used. Typically a ceramic capacitor with a value between 22nF and 68nF is
selected for the bootstrap capacitor.
OUTPUT OVERLOAD PROTECTION
In the event of an overcurrent on either output after the output reaches regulation, pulse-by-pulse current limit is
in effect for that output. In addition, an output under-voltage (UV) comparator monitors the FBx voltage (which
follows the output voltage) to declare a fault if the output drops below 85% of regulation. During this fault
condition, both PWM outputs are disabled. This ensures that both outputs discharge to GND, in the event that
over-current is on one output while the other is not loaded. The converter enters a hiccup mode timeout before
attempting to restart.
If an over-current condition exists during soft start, pulse-by-pulse current limiting reduces the pulse width of the
affected output’s PWM. In addition, if an overcurrent pulse is detected, six clock cycles are skipped before a next
PWM pulse is enabled, effectively dividing the PWM frequency by six and preventing excessive current build up
in the indictor. At the end of the soft start time, a UV fault is declared and the operation is the same as described
above.
The overcurrent threshold for Output1 and Output2 are set nominally 2.2 A and 3.8 A respectively.
DESIGN HINT: The OCP Threshold refers to the peak current in the internal switch. Be sure to add the 1/2
of the peak inductor ripple current to the DC load current in determining how close the actual operating point
is to the OCP Threshold.
OPERATING NEAR MAXIMUM DUTY CYCLE
If the TPS5429x is operated at maximum duty cycle, and if the input voltage is insufficient to support the output
voltage (at full load or during a load current transient) then there is a possibility that the output voltage falls from
regulation and trip the output UV comparator. If this should occur, the TPS5429x protection circuitry declares a
fault and enter hiccup mode.
DESIGN HINT: Ensure that under ALL conditions of line and load regulation that there is sufficient duty cycle
to maintain output voltage regulation.
DUAL SUPPLY OPERATION
It is possible to operate a TPS5429x from two supply voltages. If this application is desired, then the sequencing
of the supplies must be such that PVDD2 is above the UVLO voltage before PVDD1 begins to rise. This is to
ensure the internal regulator and the control circuitry is in operation before PVDD1 supplies energy to the output.
In addition, Output1 must be held in the disabled state (EN1 high) until there is sufficient voltage on PVDD1 to
support Output1 in regulation. (See Operating near Maximum Duty Cycle)
The preferred sequence of events follows:
1. PVDD2 rises above the input UVLO voltage
2. PVDD1 rises with Output1 disabled until PVDD1 rises above level to support Output1 regulation
With the two conditions above satisfied, there is no restriction on PVDD2 to be greater than, or less than PVDD1.
DESIGN HINT: An R-C delay on EN1 may be used to delay the startup of Output1 for a long enough period
of time to ensure PVDD1 can support Output1 load.
16
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OVER-TEMPERATURE PROTECTION AND JUNCTION TEMPERATURE RISE
The over temperature thermal protection limits the maximum power to be dissipated at a given operating ambient
temperature. In other words, at a given device power dissipation, the maximum ambient operating temperature is
limited by the maximum allowable junction operating temperature. The device junction temperature is a function
of power dissipation, and the thermal impedance from the junction to the ambient. If the internal die temperature
should reach the thermal shutdown level, the TPS5429x shuts off both PWMs and remain in this state until the
die temperature drops below 125°C, at which time the device restarts.
The first step in determining the device junction temperature is to calculate the power dissipation. The power
dissipation is dominated by the two switching MOSFETs and the BP internal regulator. The power dissipated by
each MOSFET is composed of conduction losses and switching losses. The total conduction loss in the high side
and low side MOSFETs for each channel is given by Equation 12.
æ
DI 2 ö
PD(cond) = RDS(on )HS ´ D + RDS(on)LS ´ (1 - D ) ´ ç IO2 + O ÷
ç
12 ÷ø
è
)
(
(12)
where
•
•
IO is the DC output current,
ΔIO is the peak-to-peak ripple current in the inductor
Notice the impact of operating duty cycle on the result.
The switching loss for each channal is approximated by Equation 13.
PD(SW ) =
VIN2 ´ C OSS (HS ) + C OSS (LS ) ´ fS
2
(
)
(13)
where
•
•
•
COSS(HS) is the output capacitance of the high-side MOSFET
COSS(LS) is the output capacitance of the low-side MOSFET
ƒS is the switching frequency
The total power dissipation is found by summing the power loss for both MOSFETs plus the loss in the internal
regulator.
PD = PD(cond)output1 + PD(SW )output1 + PD(cond)output2 + PD(SW )output2 + VIN ´ Iq
(14)
The temperature rise of the device junction is dependent on the thermal impedance from junction to the mounting
pad (See Package Dissipation Ratings), plus the thermal impedance from the thermal pad to ambient. The
thermal impedance from the thermal pad to ambient is dependent on the PCB layout (PowerPAD interface to the
PCB, the exposed pad area) and airflow (if any). See PCB Layout Guidelines, Additional References.
The operating junction temperature is shown in Equation 15.
(
TJ = TA + PD ´ qTH(pkg) + qTH(pad-amb)
)
(15)
where
•
θth is the thermal impedance
BYPASSING AND FILTERING
As with any integrated circuit, supply bypassing is important for jitter free operation. To improve the noise
immunity of the converter, ceramic bypass capacitors must be placed as close to the package as possible.
• PVDD1 to GND – Use a 10 µF ceramic capacitor
• PVDD2 to GND – Use a 10 µF ceramic capacitor
• BP to GND – Use a 4.7 µF Ceramic capacitor
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POWER DERATING
The TPS5429x delivers full current at wide duty cycles at ambient temperatures up to 85°C if the thermal
impedance from the thermal pad is sufficient to maintain the junction temperature below the thermal shut down
level. At higher ambient temperatures, the device power dissipation must be reduced to maintain the junction
temperature at or below the thermal shutdown level. Figure 18 illustrates the power derating for elevated ambient
temperature under various air flow conditions. Note that these curves assume the PowerPAD is soldered to the
recommended thermal pad. See References for further information.
1.8
LFM = 250
1.6
LFM = 500
PD – Power Dissipation – W
1.4
LFM = 0
1.2
LFM = 150
1.0
0.8
0.6
LFM
0
150
250
500
0.4
0.2
0
0
20
40
60
80
100
120
TA – Ambient Temperature – °C
140
Figure 18. Power Derating Curves
PowerPAD PACKAGE
The PowerPAD package provides low thermal impedance for heat removal from the device. The PowerPAD
derives its name and low thermal impedance from the large bonding pad on the bottom of the device. The circuit
board must have an area of solder-tinned-copper underneath the package. The dimensions of this area depend
on the size of the PowerPAD package. Thermal vias connect this area to internal or external copper planes and
should have a drill diameter sufficiently small so that the via hole is effectively plugged when the barrel of the via
is plated with copper. This plug is needed to prevent wicking the solder away from the interface between the
package body and the solder-tinned area under the device during solder reflow. Drill diameters of 0.33 mm (13
mils) works well when 1-oz copper is plated at the surface of the board while simultaneously plating the barrel of
the via. If the thermal vias are not plugged when the copper plating is performed, then a solder mask material
should be used to cap the vias with a diameter equal to the via diameter of 0.1 mm minimum. This capping
prevents the solder from being wicked through the thermal vias and potentially creating a solder void under the
package. (See Additional References)
18
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LAYOUT RECOMMENDATIONS
•
•
•
•
•
•
•
•
•
•
The PowerPad must be connected to the low-current ground with available surface copper to dissipate heat.
Extending ground land beyond the device package area between PVDD1 (pin 1) and PVDD2 (pin 16) and
between COMP1 (pin 8) and COMP2( pin 9) is recommended..
Connect PGND1 and PGND2 to the PowerPad through a 10-mil wide trace.
Place the ceramic input capacitors near PVDD1 and PVDD2 and bypass to PGND1 and PGND2 respectively.
Locate the inductor near the SW1 or SW2 pin.
Connect the output capacitor grounds to PGND1 or PGND2 with wide, tight loops.
Use a wide ground connection from input capacitor PGND1 or PGND2 as close to power path as possible. It
is recommend they be placed directly underneath.
Locate the bootstrap capacitor near the BOOT pin to minimize gate drive loop.
Locate the feedback and compensation components far from switch node and input capacitor ground
connection.
Locate the snubber components from SW1 or SW2 to PGND1 or PGND2 close to the device, minimizing the
loop area.
Locate the BP bypass capacitor very close to device and bypass to PowerPad. Locate output ceramic
capacitor close to inductor output terminal and between inductor and electrolytic capacitors if used.
Figure 19. Top Layer
Figure 20. Bottom Layer
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DESIGN EXAMPLES
Design Example 1
The following example illustrates the design process and component selection for a 12-V to 5-V and 3.3-V dual
non-synchronous buck regulator using the TPS54291 converter. A definition of symbols used can be found in
Table 1 of the appendix
Table 1. Design Example Electrical Characteristics
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
8
12
14
V
12
20
mA
4.2
4.4
V
INPUT CHARACTERSTICS
VIN
Input voltage
IIN
Input current
VIN = Nom, IOUT = Max
No load input current
VIN = Nom, IOUT = 0 A
Input UVLO
IOUT = Min to Max
VIN(UVLO)
A
4
OUTPUT CHARACTERSTICS
VOUT1
Output voltage 1
VIN = Nom, IOUT = Nom
3.2
3.3
3.4
V
VOUT2
Output voltage 2
VIN = Nom, IOUT = Nom
1.15
1.20
1.25
V
Line regulation
VIN = Min to Max
1%
Load regulation
IOUT = Min to Max
1%
VOUT1(ripple)
Output1 voltage Ripple
VIN = Nom, IOUT1 = Max
VOUT2(ripple)
Output2 voltage Ripple
VIN = Nom, IOUT2 = Max
IOUT1
Output current 1
VIN = Min to Max
0
IOUT2
Output current 2
VIN = Min to Max
0
2.5
A
IOCP1
Output overcurrent Channel 1
VIN = Nom, VOUT = (VOUT1 – 5%)
1.8
2.2
2.6
A
IOCP2
Output overcurrent Channel 2
VIN = Nom, VOUT = (VOUT2 – 5%)
3.2
3.8
4.6
A
50
mVPP
24
mVPP
1.5
A
TRANSIENT RESPONSE
ΔVOUT
Change from load transient
ΔIOUT = 1 A @ 3 µA/s
Settling time
to 1% of VOUT
200
mV
1
ms
SYSTEMS CHARACTERSTICS
f SW
Switching frequency
ηPEAK
Peak efficiency
VIN = Nom
η
Full load efficiency
VIN = Nom, IOUT = Max
TOP
Operating temperature range
VIN = Min to Max, IOUT = Min to Max
20
500
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600
700
kHz
60
°C
90%
80%
0
25
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The list of materials for this application is shown below in Table 2. The efficiency, line regulation and load
regulation from printed circuit boards built using this design are shown in Figure 23 and Figure 24.
Figure 21. TPS54291 Design Example 1 Schematic
Step by Step Design Procedure
Duty Cycle Estimation
The duty cycle of the main switching FET is estimated by Equation 16 and Equation 17.
DMAX1 »
VOUT
VOUT
3.3
1.2
=
= 0.413 ¾¾® DMAX2 »
=
= 0.15
VIN(min ) 8.0
VIN(min ) 8.0
(16)
VOUT
VOUT
3.3
1.2
DMIN1 »
=
= 0.236 ¾¾® DMIN2 »
=
= 0.086
VIN(max ) 14
VIN(max ) 14
(17)
Inductor Selection
The peak to peak ripple should be limited to between 20% and 30% of the maximum output current.
ILrip1(max ) = 0.30 ´ IOUT(max ) = 0.3 ´ 1.5 A = 0.450 A
ILrip2(max ) = 0.30 ´ IOUT(max ) = 0.3 ´ 2.5 A = 0.750 A
(19)
The minimum inductor size can be estimated by Equation 20 and Equation 21.
VIN(max ) - VOUT
1
14 - 3.3
1
´ DMIN ´
=
´ 0.236 ´
= 9.35 mH
LMIN1 »
ILRIP(max )
0.45 A
600kHz
fSW
L MIN2 »
VIN(max ) - VOUT
ILRIP (max )
´ DMIN ´
(18)
1
14 - 1.2
1
=
´ 0.086 ´
= 2.45 mH
0.75 A
600 kHz
fSW
(20)
(21)
The standard inductor values of 8.2 µH and 3.3 µH are selected for Channel 1 and Channel 2 respectively. The
actual ripple currents are estimated by Equation 22 and Equation 23.
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IRIPPLE1 »
IRIPPLE2 »
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VIN(max ) - VOUT
L1
VIN(max ) - VOUT
L2
´ DMIN ´
´ DMIN ´
1
fSW
1
fSW
=
=
14 - 3.3
1
´ 0.236 ´
= 0.513 A
8.2 mH
600kHz
(22)
14 - 1.2
1
´ 0.086 ´
= 0.556A
3.3 mH
600kHz
(23)
The RMS current through the inductor is approximated by Equation 24 and Equation 25.
IL(rms ) = IL(avg)2 +
2
1 I
12 RIPPLE
» IOUT(max )2 +
2
1 I
12 RIPPLE
=
(1.5 )2 + 112 (0.513 )2 A = 1.51A
IL(rms ) = IL(avg)2 +
2
1 I
12 RIPPLE
» IOUT(max )2 +
2
1 I
12 RIPPLE
=
(2.5 )2 + 112 (0.556 )2 A = 2.51A
(24)
(25)
A DC current with 30% peak-to-peak ripple has an RMS current approximately 0.4% above the average current.
The peak inductor current is estimated by Equation 26 and Equation 27.
IL(peak ) » IOUT(max ) + 12 IRIPPLE = 1.5 A + 12 0.513A = 1.76 A
1
(26)
1
IL(peak ) » IOUT(max ) + 2 IRIPPLE = 2.5 A + 2 0.556A = 2.78 A
(27)
A 8.2-µH inductor with a minimum RMS current rating of 1.51 A and minimum saturation current rating of 3.7 A
must be selected. A Coilcraft MSS1048-822ML 8.2-µH, 4.38-A inductor is chosen for Channel 1 and a Coilcraft
MSS1048-332 3.3-µH inductor is chosen for Channel 2.
Output Capacitor Selection
Output capacitors are selected to support load transients and output ripple current. The minimum output
capacitance to meet the transient specification is given by Equation 28 and Equation 29.
COUT1(min ) =
ITRAN(max )2 ´ L
(VOUT )´ VOVER
=
2
C OUT2(min ) =
ITRAN(max ) ´ L
(VOUT )´ VOVER
=
1A 2 ´ 8.2 mH
= 12.4 mF
3.3 V ´ 0.2 V
(28)
1A 2 ´ 3.3 mH
= 13.7 mF
1.2 V ´ 0.2 V
(29)
The maximum ESR to meet the ripple specification is given by Equation 30 and Equation 31.
æ
ö
IRIPPLE
æ
ö
0.513 A
VRIPPLE(total) - ç
÷ 0.050 V - ç
÷
f
´
´
8
C
OUT
SW ø
è
è 8 ´ 12.4 mF ´ 600kHz ø = 0.081W
=
ESRMAX =
IRIPPLE
0.513 A
(30)
æ
ö
IRIPPLE
æ
ö
0.556 A
VRIPPLE(total) - ç
÷ 0.024 V - ç
÷
è 8 ´ COUT ´ fSW ø =
è 8 ´ 13.7 mF ´ 600kHz ø = 0.028 W
ESRMAX =
IRIPPLE
0.556 A
(31)
A single 22-µF ceramic capacitor with approximately 2.5 mΩ of ESR is selected to provide sufficient margin for
capacitance loss due to DC voltage bias.
Input Capacitor Selection
A minimum 10-µF ceramic input capacitor on each PVDD pin is recommended. The ceramic capacitor must
handle the RMS ripple current in the input capacitor.
The RMS current in the input capacitors is estimated by Equation 32 and Equation 33.
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IRMS(CIN1) = IOUT1 ´ D1 ´ (1 - D1 ) = 1.5 A ´ 0.413 ´ (1 - 0.413 ) = 0.74 A
(32)
IRMS(CIN2 ) = IOUT1 ´ D2 ´ (1 - D2 ) = 2.5 A ´ 0.15 ´ (1 - 0.15 ) = 0.89 A
(33)
One 1210 10-µF, 25-V, X5R, ceramic capacitor with 2-mΩ ESR and a 2-A RMS current rating are selected for
each PVDD input. Higher voltage capacitors are selected to minimize capacitance loss at the DC bias voltage to
ensure the capacitors will have sufficient capacitance at the working voltage.
Feedback
The primary feedback divider resistor (RFB) from VOUT to FB should be selected between 10-kΩ and 100-kΩ to
maintain a balance between power dissipation and noise sensitivity. For a 3.3-V and 5-V output, 20.5 kΩ is
selected and the lower resistor is given by Equation 34.
V ´ RFB
RBIAS = FB
VOUT - VFB
(34)
For RFB = 20.5kΩ and VFB = 0.80 V, RBIAS = 6.56 kΩ and 41.0 kΩ (6.49 kΩ and 40.2 kΩ selected) for 3.3 V and
1.2 V respectively. It is common to select the next lower available resistor value for the bias resistor. This biases
the nominal output voltage slightly higher, allowing additional tolerance for load regulation.
Compensation Components
The TPS54291 controller uses a transconductance error amplifier, which is compensated with a series capacitor
and resistor to ground plus a high-frequency capacitor to reduce the gain at high frequency. To select the
component, the following equations define the control loop and power stage gain and transfer function:
FMTPS5429x =
fSW
é
(K´tON ) + 95 ´ 10-6 ´ æ VIN - VOUT ö ù
ê19.7 ´ e
ç
÷ú
L
è
øû
ë
=
600kHz
= 3762
6
é
1.5
10
393ns
´
´
(
)
-6 æ 14 - 3.3 ö ù
+ 95 ´ 10 ´ ç
ê19.7 ´ e
÷ú
è 8.2 mH ø ûú
ëê
(35)
where
•
•
•
K = 5.6 × 105 for TPS54290
K = 1.5 × 106 for TPS54291
K = 3.6 × 106 for TPS54292
The overall DC gain of the converter control-to-output transfer function is approximated by Equation 36.
fC =
VIN ´ FM ´ 2 ´ 10-4
é æ V ´ FM ´ 95 ´ 10-6
ê1 + ç IN
ç
2 ´ RLOAD
ëê è
öù
÷ú
÷ú
øû
=
14 V ´ 3762 ´ 2 ´ 10-4
é æ 14 V ´ 3762 ´ 95 ´ 10-6
ê1 + ç
4.4 W
êë çè
öù
÷ú
÷ú
øû
= 4.293
(36)
With the power stage DC gain, it is possible to estimate the required mid-band gain to program a desired
cross-over frequency.
æ
ö
fC
æ
ö
3.22
KEA = -20 ´ log ç
÷ = -20 ´ log ç
÷ = 11.83 dB
ç 1 + 2 ´ p ´ fCO ´ (2 ´ RLOAD )´ COUT ÷
1
2
30kHz
4.4
22
F
+
´
p
´
´
W
´
m
è
ø
è
ø
(37)
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Compensation Gain Setting Resistor
RCOMP programs the mid-band error amplifier gain to set the desired cross-over frequency in Equation 38.
RCOMP =
10
KEA
20
´ (ZLOWER + ZUPPER ) 10
=
gM ´ ZLOWER
11.83dB
20
´ (6.49kW + 20.5kW)
= 50.42kW » 53.6kW
325 mS ´ 6.49kW
(38)
Compensation Integrator Capacitor
An integrator capacitor provides maximum DC gain for the best possible DC regulation while programming the
compensation zero to match the natural pole of the output filter. CCOMP is selected by Equation 40.
1
1
fPOLE =
=
= 1.644kHz
2 ´ p ´ RLOAD ´ COUT 2 ´ p ´ 4.4 W ´ 22 mF
(39)
CCOMP =
1
=
2 ´ p ´ fPOLE ´ RCOMP
1
= 1.80nF
2 ´ p ´ 1.644kHz ´ 53.6kW
(40)
Bootstap Capacitor
To ensure proper charging of the high-side FET gate and limit the ripple voltage on the boost capacitor, a 47-nF
boot strap capacitor is recommended.
Power Dissipation
The power dissipation in the TPS54291 is made from FET conduction losses, switching losses and regulator
losses.
Conduction losses are estimated by Equation 41 and Equation 42.
)
(
2
ö = 150mW ´ 0.413 + 100mW ´ 0.587 ´ 1.51 2 = 0.275 W
PCON1 = RDS(on )HS ´ D1 + RDS(on )LS ´ (1 - D1 ) ´ æç I
(
) ( )
÷
è SW 1(RMS ) ø
(41)
)
(
2
ö = 105mW ´ 0.15 + 75mW ´ 0.85 ´ 2.51 2 = 0.501W
PCON2 = RDS(on )HS ´ D1 + RDS(on )LS ´ (1 - D1 ) ´ æç I
(
) ( )
÷
SW
1
RMS
(
)
è
ø
(42)
The switching losses are estimated by Equation 43 and Equation 44.
PSW1 »
VIN(max )2 ´ (COSS(HS) + COSS(LS) ) ´ fSW
2
=
2
PSW 2 »
VIN(max ) ´ (COSS(HS ) + COSS(LS ) ) ´ fSW
2
=
142 ´ (140pF + 200pF) ´ 600kHz
= 20mW
2
(43)
142 ´ (200pF + 280pF) ´ 600kHz
= 28mW
2
(44)
The regulator losses are estimated by Equation 45.
(
)
PREG » IDD ´ VIN(max ) + IBP ´ VIN(max ) - VBP = 10mA ´ 14 V = 140mW
(45)
Total power dissipation in the device is the sum of conduction losses and switching losses for both channels plus
regulator losses, which is estimated to be 1.01 W.
24
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Design Example Test Results
Figure 22. TPS54291 Design Example Switching Waveforms
90
100
VIN = 8 V
85
VIN = 8 V
95
90
80
h – Efficiency – %
h – Efficiency – %
85
VIN = 12 V
75
70
VIN = 14 V
65
VIN = 14 V
80
75
VIN = 12 V
70
65
60
60
55
VOUT = 1.2 V
50
55
VOUT = 3.3 V
50
0
0.5
1.0
1.5
2.0
ILOAD – Load Current – A
Figure 23. Design Efficiency for 1.2-V Output
2.5
0
0.3
0.6
0.9
1.2
ILOAD – Load Current – A
1.5
Figure 24. Design Efficiency for 3.3-V Output
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Table 2. Design Example List of Materials
REFERENCE
DESIGNATOR
QTY
VALUE
DESCRIPTION
SIZE
PART NUMBER
MFR
C12
1
4.7 µF
Capacitor, Ceramic, 10 V, X5R, 20%
0805
Std
C2, C14
2
22 µF
Capacitor, Ceramic, 6.3 V, X5R, 20%
1206
C3216X5R0J226M TDK
Std
C3, C13
2
470 pF
Capacitor, Ceramic, 25 V, X7R, 20%
0603
Std
Std
C4, C11
2
0.047 µF
Capacitor, Ceramic, 25 V, X7R, 20%
0603
Std
Std
TDK
C5, C10
2
10 µF
Capacitor, Ceramic, 25 V, X5R, 20%
1210
C3225X5R1E106
M
C6
2
1.8 nF
Capacitor, Ceramic, 25 V, X7R, 20%
0603
Std
Std
C7
1
15 pF
Capacitor, Ceramic, 25 V, X7R, 20%
0603
Std
Std
C8
1
47 pF
Capacitor, Ceramic, 25 V, X7R, 20%
0603
Std
Std
C9
1
1.2 nF
Capacitor, Ceramic, 25 V, X7R, 20%
0603
Std
Std
L1
1
8.2 µH
Inductor, SMT, 4.38 A, 20 mΩ
0.402 x
0.394 inch
MSS1048-822L
Coilcraft
L2
1
3.3 µH
Inductor, SMT, 5.04 A, 10 mΩ
0.402 x
0.394 inch
MSS1048-332L
Coilcraft
R10
1
40.2 kΩ
Resistor, Chip, 1/16W, 1%
0603
Std
Std
R2, R11
2
10 Ω
Resistor, Chip, 1/16W, 5%
0603
Std
Std
R3, R12
2
20.5 kΩ
Resistor, Chip, 1/16W, 1%
0603
Std
Std
R4
1
6.49 kΩ
Resistor, Chip, 1/16W, 1%
0603
Std
Std
R6
1
7.87 kΩ
Resistor, Chip, 1/16W, 1%
0603
Std
Std
R7
1
4.64 kΩ
Resistor, Chip, 1/16W, 1%
0603
Std
Std
1
2.5 A/1.5 A, Dual Output Fully Synchronous Buck
600 Hz
Converter w/Integrated FET
CSP
TPS54291PWP
TI
U1
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Design Example 2 (Cascading Operation)
TPS5429x can be configured as cascaded operation as shown in Figure 25. The 12-V input supply is applied to
PVDD2 and the the channel 2 output is tied to PVDD1. The channel 2 output is 3.3 V and capable of supporting
1.5 A to the load while generating power for the 1.2-V input for channel 1.
+
+
[email protected]
[email protected]
+
+
Figure 25. Cascading Operation
Design Example 2 Test Results
For Figure 26, Ch1: 12-V supply; Ch2: VOUT1 (1.2 V); Ch3: VOUT2(3.3 V). For Figure 27, Ch1: Channel 1 SW
node; Ch2: Channel 1 output ripple Ch3: Channel 2 output ripple; Ch2: Channel 2 SW node.
Figure 26. Start-Up Waveforms
Figure 27. Output Ripple and SW Nodes
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ADDITIONAL REFERENCES
RELATED DEVICES
The following devices have characteristics similar to the TPS54290/1/2 and may be of interest.
DEVICE
DESCRIPTION
TPS40222
5-V input, 1.5-A, Non-Synchronous Buck Converter
TPS54283/TPS54286
2-A DUAL NON-SYNCHRONOUS CONVERTER WITH INTEGRATED HIGH-SIDE FET
TPS55383/TPS55386
3-A DUAL NON-SYNCHRONOUS CONVERTER WITH INTEGRATED HIGH-SIDE FET
REFERENCES
These references, design tools and links to additional references, including design software, may be found at
www.power.ti.com.
1. Additional PowerPAD™ information may be found in Applications Briefs (SLMA002A) and (SLMA004).
2. Under The Hood Of Low Voltage DC/DC Converters – SEM1500 Topic 5 – 2002 Seminar Series
3. Understanding Buck Power Stages in Switchmode Power Supplies, (SLVA057), March 1999
4. Designing Stable Control Loops – SEM 1400 – 2001 Seminar Series
Package Outline and Recommended PCB Footprint
The following pages outline the mechanical dimensions of the 16-pin PWP package and provide
recommendations for PCB layout.
28
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PACKAGE OPTION ADDENDUM
www.ti.com
20-Nov-2009
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
TPS54290PWP
ACTIVE
HTSSOP
PWP
16
TPS54290PWPR
ACTIVE
HTSSOP
PWP
16
TPS54291PWP
ACTIVE
HTSSOP
PWP
16
TPS54291PWPR
ACTIVE
HTSSOP
PWP
16
TPS54292PWP
ACTIVE
HTSSOP
PWP
16
TPS54292PWPR
ACTIVE
HTSSOP
PWP
16
90
Lead/Ball Finish
MSL Peak Temp (3)
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
2000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
2000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
2000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
90
90
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
20-Jul-2010
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
TPS54290PWPR
HTSSOP
PWP
16
2000
330.0
12.4
TPS54292PWPR
HTSSOP
PWP
16
2000
330.0
12.4
Pack Materials-Page 1
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
6.9
5.6
1.6
8.0
12.0
Q1
6.9
5.6
1.6
8.0
12.0
Q1
PACKAGE MATERIALS INFORMATION
www.ti.com
20-Jul-2010
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TPS54290PWPR
HTSSOP
PWP
16
2000
346.0
346.0
29.0
TPS54292PWPR
HTSSOP
PWP
16
2000
346.0
346.0
29.0
Pack Materials-Page 2
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