TSM3N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 900 5.1 @ VGS =10V 1.25 General Description TO-251 (IPAK) The TSM3N90 TO-252 (DPAK) N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Block Diagram Features ● ● ● Low RDS(ON) 4.3Ω (Typ.) Low gate charge typical @ 17nC (Typ.) Low Crss typical @ 8.7pF (Typ.) Ordering Information Part No. Package Packing TSM3N90CH C5G TO-251 75pcs / Tube TSM3N90CP ROG TO-252 2.5Kpcs / 13” Reel TSM3N90CZ C0 TO-220 50pcs / Tube TSM3N90CI C0G ITO-220 Note: “G” denotes for Halogen Free N-Channel MOSFET 50pcs / Tube Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit IPAK/DPAK ITO-220 TO-220 Unit Drain-Source Voltage VDS 900 V Gate-Source Voltage VGS ±30 V 2.5 A 1.6 A Tc = 25ºC Continuous Drain Current Tc = 100ºC ID Pulsed Drain Current * IDM 10 A Single Pulse Avalanche Energy (Note 2) EAS 10 mJ Avalanche Current (Repetitive) (Note 1) IAR 2.5 A Repetitive Avalanche Energy (Note 1) EAR 9.4 mJ dv/dt 4.5 V/ns Peak Diode Recovery dv/dt (Note 3) o Total Power Dissipation @ TC = 25 C Operating Junction Temperature Storage Temperature Range PTOT TJ TSTG 94 32 150 -55 to +150 94 W ºC o C Note: Limited by maximum junction temperature 1/12 Version: C13 TSM3N90 900V N-Channel Power MOSFET Thermal Performance Symbol IPAK/DPAK ITO-220 TO-220 Thermal Resistance - Junction to Case RӨJC 1.33 1.33 3.9 Thermal Resistance - Junction to Ambient RӨJA 110 Parameter Unit o C/W 62.5 Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 900 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 1.25A RDS(ON) -- 4.3 5.1 Ω Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2.0 -- 4.0 V Zero Gate Voltage Drain Current VDS = 900V, VGS = 0V IDSS -- -- 10 uA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Forward Transfer Conductance VDS = 30V, ID = 1.25A gfs -- 3 -- S Qg -- 17 -- Qgs -- 2.4 -- Qgd -- 6.6 -- Ciss -- 748 -- Coss -- 55 -- Crss -- 8.7 -- td(on) -- 16 -- Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 720V, ID = 2.5A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz nC pF Switching Turn-On Delay Time Turn-On Rise Time VGS = 10V, ID = 2.5A, tr -- 25 -- Turn-Off Delay Time VDD = 450V, RG = 25Ω td(off) -- 63 -- tf -- 31 -- IS -- -- 2.5 Turn-Off Fall Time nS Source-Drain Diode Ratings and Characteristic Source Current Integral reverse diode in Source Current (Pulse) the MOSFET ISM -- -- 10 A Diode Forward Voltage IS = 2.5A, VGS = 0V VSD -- -- 1.5 V Reverse Recovery Time VGS = 0V, IS =2.5A, tfr -- 355 -- nS dIF/dt = 100A/us Reverse Recovery Charge Qfr -1.8 -Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature Note 2: Max Rating EAS Test Condition: VDD = 50V, IAS=2A, L=5mH, RG =25Ω, Starting TJ=25ºC Guaranteed 100% EAS Test Condition: VDD = 50V, IAS=2A, L=1mH, RG =25Ω, Starting TJ=25ºC Note 3: ISD≤2.5A, di/dt≤200A/uS, VDD≤BVDSS, Starting TJ=25ºC Note 4: Pulse test: pulse width ≤300uS, duty cycle ≤2% Note 5: Essentially Independent of Operating Temperature uC 2/12 A Version: C13 TSM3N90 900V N-Channel Power MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 3/12 Version: C13 TSM3N90 900V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 4/12 Version: C13 TSM3N90 900V N-Channel Power MOSFET Electrical Characteristics Curve (Tc = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 5/12 Version: C13 TSM3N90 900V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Drain Current vs. Case Temperature BVDSS vs. Junction Temperature Maximum Safe Operating Area Capacitance vs. Drain-Source Voltage Maximum Safe Operating Area (ITO-220) 6/12 Version: C13 TSM3N90 900V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Thermal Transient Impedance, Junction-to-Ambient (ITO-220) 7/12 Version: C13 TSM3N90 900V N-Channel Power MOSFET TO-220 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 8/12 Version: C13 TSM3N90 900V N-Channel Power MOSFET ITO-220 Mechanical Drawing Unit: Millimeters Marking Diagram Y G WW F = Year Code = Halogen Free = Week Code by Calendar Year = Factory Code 9/12 Version: C13 TSM3N90 900V N-Channel Power MOSFET TO-251 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 10/12 Version: C13 TSM3N90 900V N-Channel Power MOSFET TO-252 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 11/12 Version: C13 TSM3N90 900V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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