TSM9NB50 500V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 500 ID (A) 0.85 @ VGS =10V 9 General Description The TSM9NB50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge. Features Block Diagram ● Low RDS(ON) 0.85Ω (Max.) ● Low gate charge typical @ 44nC (Typ.) ● Improve dv/dt capability Ordering Information Part No. Package Packing TSM9NB50CZ C0 TO-220 50pcs / Tube TSM9NB50CI C0 ITO-220 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ±30 V 9.0 A 5.4 A Continuous Drain Current Tc = 25ºC Tc = 100ºC ID Pulsed Drain Current * IDM 36 A Single Pulse Avalanche Energy (Note 2) EAS 208 mJ TJ 150 Operating Junction Temperature Storage Temperature Range * Limited by maximum junction temperature TSTG -55 to +150 Symbol Limit ºC o C Thermal Performance Parameter Thermal Resistance - Junction to Case TO-220 RӨJC ITO-220 Thermal Resistance - Junction to Ambient TO-220 / ITO-220 Notes: Surface mounted on FR4 board t ≤ 10sec 1/7 RӨJA Unit 0.9 3.1 o C/W 62.5 Version: A12 TSM9NB50 500V N-Channel Power MOSFET Electrical Specifications (Tc = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 500 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 4.5A RDS(ON) -- 0.72 0.85 Ω Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2.5 3.3 4.5 V Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V IDSS -- -- 1 uA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Diode Forward Voltage IS = 9A, VGS = 0V VSD -- 0.9 1.5 V Qg -- 44 -- Qgs -- 8 -- Qgd -- 27.4 -- Ciss -- 1019 -- Coss -- 129 -- Crss -- 15 -- td(on) -- 27.4 -- tr -- 46.8 -- td(off) -- 13.3 -- -- 5.7 -- Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 400V, ID = 8A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz nC pF Switching Turn-On Delay Time Turn-On Rise Time VDD = 250V, ID = 9A, Turn-Off Delay Time RG = 25Ω Turn-Off Fall Time tf Notes: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. VDD = 50V, IAS=2.5A, L=60mH, VDS=500V 3. Pulse test: pulse width ≤300uS, duty cycle ≤2% 4. Essentially Independent of Operating Temperature 2/7 nS Version: A12 TSM9NB50 500V N-Channel Power MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 3/7 Version: A12 TSM9NB50 500V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 4/7 Version: A12 TSM9NB50 500V N-Channel Power MOSFET TO-220 Mechanical Drawing DIM A B C D E F G H I J K L M N O P 5/7 TO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.00 10.50 0.394 0.413 3.74 3.91 0.147 0.154 2.44 2.94 0.096 0.116 -6.35 -0.250 0.38 1.10 0.015 0.043 2.34 2.71 0.092 0.107 4.69 5.43 0.185 0.214 12.70 14.73 0.500 0.580 8.38 9.38 0.330 0.369 14.22 16.51 0.560 0.650 3.55 4.82 0.140 0.190 1.16 1.40 0.046 0.055 27.70 29.62 1.091 1.166 2.03 2.92 0.080 0.115 0.25 0.61 0.010 0.024 5.84 6.85 0.230 0.270 Version: A12 TSM9NB50 500V N-Channel Power MOSFET ITO-220 Mechanical Drawing DIM A B C D E F G H I J K L M N O 6/7 ITO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.04 10.07 0.395 0.396 6.20 (typ.) 0.244 (typ.) 2.20 (typ.) 0.087 (typ.) ∮1.40 (typ.) ∮0.055 (typ.) 15.0 15.20 0.591 0.598 0.52 0.54 0.020 0.021 2.35 2.73 0.093 0.107 13.50 13.55 0.531 0.533 1.11 1.49 0.044 0.058 2.60 2.80 0.102 0.110 4.49 4.50 0.176 0.177 1.15 (typ.) 0.045 (typ.) 3.03 3.05 0.119 0.120 2.60 2.80 0.102 0.110 6.55 6.65 0.258 0.262 Version: A12 TSM9NB50 500V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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