SANYO TT2274T

TT2274T
Ordering number : ENA1139
SANYO Semiconductors
DATA SHEET
TT2274T
NPN Triple Diffused Planar Silicon Transistor
Switching Regulator Applications
Features
•
•
•
High breakdown voltage (VCBO≥1400V).
Ultrahigh-speed switching.
Wide ASO.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
1400
V
Collector-to-Emitter Voltage
VCEO
800
V
Emitter-to-Base Voltage
VEBO
5
V
IC
1
A
Collector Current
Collector Current (Pulse)
ICP
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
PW≤300μs, duty cycle≤10%
Tc=25°C
2
A
1
W
25
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Symbol
Conditions
Collector Cutoff Current
ICBO
ICES
VCB=800V, IE=0A
VCB=1400V, RBE=0Ω
Emitter Cutoff Current
IEBO
VEB=4V, IC=0A
VCE=5V, IC=0.1A
VCE=5V, IC=0.5A
DC Current Gain
hFE1
hFE2
Ratings
min
typ
15
Unit
max
10
μA
1
mA
1
mA
35
4
Continued on next page.
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
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90308CB TI IM TC-00001577 No. A1139-1/4
TT2274T
Continued from preceding page.
Symbol
Ratings
Conditions
Collector-to-Emitter Saturation Voltage
VCE(sat)
Base-to-Emitter Saturation Voltage
VBE(sat)
min
V(BR)CBO
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, IE=0A
IC=5mA, RBE=∞
Emitter-to-Base Breakdown Voltage
V(BR)EBO
tstg
IE=1mA, IC=0A
IC=0.5A, IB1=0.1A, IB2=--0.25A, RL=400Ω, VCC=200V
tf
IC=0.5A, IB1=0.1A, IB2=--0.25A, RL=400Ω, VCC=200V
Fall Time
Package Dimensions
Package Dimensions
unit : mm (typ)
7518-003
unit : mm (typ)
7003-003
5.5
0.85
0.7
2
2.3
V
5
0.5
1
2
2.3
μs
0.25
0.4
μs
0 to 0.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
3
3.0
3
0.6
0.5
V
1.5
2.5
0.8
1.2
7.5
0.8
1.6
1
V
800
0.5
0.85
0.6
1400
1.5
1.5
4
7.0
5.5
4
V
V
2.3
6.5
5.0
0.5
1.5
1.5
7.0
2.3
6.5
5.0
Unit
max
IC=0.25A, IB=0.05A
IC=0.5A, IB=0.1A
Collector-to-Base Breakdown Voltage
Storage Time
typ
1.2
Parameter
1 : Base
2 : Collector
3 : Emitter
4 : Collector
1.2
2.3
2.3
SANYO : TP-FA
SANYO : TP
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
OUTPUT
IB2
INPUT
VR
RB
RL
50Ω
+
100μF
+
470μF
VBE= --5V
IC -- VCE
1.0
300mA
180mA 160mA 140mA
200mA
0.7
Collector Current, IC -- A
0.8
120mA
100mA
80mA
60mA
0.6
0.5
40mA
0.4
0.3
A
5.0m .5mA
4
0.09
A
350m
IC -- VCE
0.10
250mA
0.9
Collector Current, IC -- A
VCC=200V
20mA
0.2
A
4.0m
3.5mA
3.0mA
2.5mA
2.0mA
0.08
0.07
0.06
1.5mA
0.05
0.04
1.0mA
0.03
0.5mA
0.02
0.1
0.01
IB=0mA
0
0
2
4
6
8
Collector-to-Emitter Voltage, VCE -- V
IB=0mA
0
10
IT13404
0
1
2
3
4
Collector-to-Emitter Voltage, VCE -- V
5
IT13405
No. A1139-2/4
TT2274T
IC -- VBE
1.0
25°C
3
DC Current Gain, hFE
0.8
0.7
0.6
0°C
0.4
Ta=
12
0.3
0.2
25°C
--40°
C
0.5
VCE=5V
Ta=120°C
5
0.9
Collector Current, IC -- A
hFE -- IC
7
VCE=5V
2
--40°C
10
7
5
3
2
0.1
1.0
0.001
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-to-Emitter Voltage, VBE -- V
1.4
10
V
CE
V
0.7
1V
V
10
7
5
3
2
1.0
0.001
3
5 7 0.01
2
3
5 7 0.1
2
3
Collector Current, IC -- A
3
2
tstg
1.0
7
5
tf
3
2
2
3
5
7
Collector Current, IC -- A
1.0
7
5
ICP=2A
IC=1A
DC
2
3
5 7 1.0
IT13407
3
2
1.0
7
5
C
25°
3
2
--40
0.1
7
5
°C
Ta=120°C
s
n
10
m
s
tio
1m
era
s
3
Ta=25°C
Single pulse
3
7 100
2
3
5
2
3
5 7 0.1
2
3
5 7 1.0
IT13409
SW Time -- IB
IC=0.5A
IB1=0.1A
R load
2
tstg
1.0
7
5
tf
3
2
0.1
0.1
2
3
5
Base Current, IC -- A
7
IT13411
Reverse Bias A S O
1.0
7
5
3
2
0.1
7
5
2
5
5 7 0.01
3
3
2
3
2
0μ
s
op
2
3
0.1
7
5
10
7
5
5
0μ
30
2
0.01
5 7 0.1
VCE(sat) -- IC
5
1.0
IT13410
PT
=1
0
3
2
3
Collector Current, IC -- A
Forward Bias A S O
5
2
2
IC / IB=5
0.001
Switching Time, SW Time -- μs
Switching Time, SW Time -- μs
IC / IB1=5
IB2 / IB1=2.5
R load
0.1
0.1
Collector Current, IC -- A
5 7 1.0
IT13408
SW Time -- IC
5
3
5 7 0.01
3
2
Collector Current, IC -- A
DC Current Gain, hFE
=5
2V
2
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
5
3
3
Collector Current, IC -- A
hFE -- IC
7
2
IT13406
7 1000
2
IT13416
Collector-to-Emitter Voltage, VCE -- V
Tc=25°C
IB2= --0.2A
L=500μH
Single pulse
0.01
100
2
3
5
7
2
1000
Collector-to-Emitter Voltage, VCE -- V
3
IT13413
No. A1139-3/4
TT2274T
PC -- Ta
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
PC -- Tc
30
Collector Dissipation, PC -- W
Collector Dissipation, PC -- W
1.2
120
Ambient Temperature, Ta -- °C
140
160
IT13414
25
20
15
10
5
0
0
20
40
60
80
100
120
140
Case Temperature, Tc -- °C
160
IT13417
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PS No. A1139-4/4