SANYO 3LP01C_09

3LP01C
Ordering number : EN6645B
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
3LP01C
General-Purpose Switching Device
Applications
Features
•
•
•
Low ON-resistance.
High-speed switching.
2.5V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (Pulse)
Allowable Power Dissipation
PW≤10μs, duty cycle≤1%
Unit
--30
V
±10
V
--0.1
A
--0.4
A
PD
Tch
0.25
W
Channel Temperature
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Conditions
Ratings
min
typ
Unit
max
V(BR)DSS
IDSS
ID=--1mA, VGS=0V
IGSS
VGS(off)
VGS=±8V, VDS=0V
VDS=--10V, ID=--100μA
--0.4
Forward Transfer Admittance
⏐yfs⏐
RDS(on)1
VDS=--10V, ID=--50mA
80
8
10.4
Ω
Static Drain-to-Source On-State Resistance
RDS(on)2
RDS(on)3
ID=--30mA, VGS=--2.5V
11
15.4
Ω
ID=--1mA, VGS=--1.5V
27
54
Ω
Zero-Gate Voltage Drain Current
Gate-to-Sourse Leakage Current
Cutoff Voltage
--30
V
VDS=--30V, VGS=0V
ID=--50mA, VGS=--4V
Marking : XA
--1
μA
±10
μA
--1.4
110
V
mS
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
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32509 MS IM TC-00001903 / 72606 / 33006PE MS IM TB-00002203 / 90100 TS IM TA-1982 No.6645-1/4
3LP01C
Continued from preceding page.
Parameter
Symbol
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
Ratings
Conditions
min
typ
Unit
max
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
7.5
pF
5.7
pF
1.8
pF
td(on)
VDS=--10V, f=1MHz
See specified Test Circuit.
24
ns
Rise Time
tr
See specified Test Circuit.
55
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
120
ns
Fall Time
tf
See specified Test Circuit.
130
ns
Total Gate Charge
Qg
nC
Qgs
0.18
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--10V, VGS=--10V, ID=--100mA
VDS=--10V, VGS=--10V, ID=--100mA
VDS=--10V, VGS=--10V, ID=--100mA
1.43
Gate-to-Source Charge
Diode Forward Voltage
VSD
IS=--100mA, VGS=0V
Package Dimensions
0.25
--0.83
nC
--1.2
V
Switching Time Test Circuit
unit : mm (typ)
7013A-013
0.1
3
VDD= --15V
VIN
ID= --50mA
RL=300Ω
VIN
PW=10μs
D.C.≤1%
1.5
2.5
0.5
2.9
0V
--4V
D
VOUT
G
2
1 : Gate
2 : Source
3 : Drain
SANYO : CP
--0.05
--0.04
--0.03
VGS= --1.5V
--0.02
--25
°C
--3
.
--0.16
--2.0V
Drain Current, ID -- A
--0.06
VDS= --10V
--0.18
5V
.
--2
V
--0.07
ID -- VGS
--0.20
--6.0
Drain Current, ID -- A
--0.08
--4
.0V
--3.5V
--0.09
0V
ID -- VDS
--0.10
S
--0.14
25°C
Ta=
0.3
1.1
0.4
50Ω
--0.12
75°
C
0.95
P.G
0.05
0.5
3LP01C
1
--0.10
--0.08
--0.06
--0.04
--0.02
--0.01
0
0
0
--0.2
--0.4 --0.6
--0.8
--1.0
--1.2
--1.4
--1.6
Drain-to-Source Voltage, VDS -- V
--1.8
--2.0
IT00077
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
Gate-to-Source Voltage, VGS -- V
--3.5
--4.0
IT00078
No.6645-2/4
3LP01C
RDS(on) -- VGS
30
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
20
15
--50mA
ID= --30mA
5
--1
--2
--3
--4
--5
--6
--7
--8
--9
Gate-to-Source Voltage, VGS -- V
10
--25°C
5
3
2
1.0
--0.01
2
3
5
7
2
--0.1
Drain Current, ID -- A
8
6
4
2
--60
--40
--20
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
--0.7
--25°C
25°C
3
--0.8
--0.9
--1.0
Diode Forward Voltage, VSD -- V
--1.1
IT00085
3
IT00080
VGS= --1.5V
2
100
7
5
25°C
Ta=75°C
3
2
--25°C
2
3
5
7
2
--1.0
3
IT00082
⏐yfs⏐ -- ID
VDS= --10V
7
5
3
25°C
2
0.1
5°C
2
Ta= --
75°C
7
5
3
2
2
3
5
7
2
--0.1
3
IT00084
SW Time -- ID
VDD= --15V
VGS= --4V
7
Switching Time, SW Time -- ns
5
Ta=7
5°C
Source Current, IS -- A
7
2
--0.1
RDS(on) -- ID
1000
--0.1
--0.6
7
Drain Current, ID -- A
2
--0.01
--0.5
5
3
IT00083
VGS=0V
2
3
5
0.01
--0.01
160
IS -- VSD
3
2
Drain Current, ID -- mA
Forward Transfer Admittance, ⏐yfs⏐ -- S
10
2
1.0
mA
--30
=
ID
5V,
--2.
A
=
50m
V GS
= -I
V, D
4.0
= -S
VG
12
3
IT00081
16
14
--25°C
5
10
--0.1
3
RDS(on) -- Ta
18
7
Drain Current, ID -- A
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
25°C
Ta=75°C
25°C
Ta=75°C
10
7
3
7
2
1000
5
2
3
IT00079
VGS= --2.5V
7
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
--10
RDS(on) -- ID
100
5
1.0
--0.01
0
0
VGS= --4V
7
25
10
RDS(on) -- ID
100
Ta=25°C
5
3
tf
2
100
td(off)
7
5
tr
3
td(on)
2
10
--0.01
2
3
5
Drain Current, ID -- A
7
--0.1
IT00086
No.6645-3/4
3LP01C
Ciss, Coss, Crss -- VDS
100
7
Gate-to-Sourse Voltage, VGS -- V
Ciss, Coss, Crss -- pF
VDS= --10V
ID= --0.1A
--9
5
3
2
10
Ciss
7
Coss
5
3
2
Crss
--8
--7
--6
--5
--4
--3
--2
--1
1.0
0
0
--10
--5
--15
--20
--25
Drain-to-Source Voltage, VDS -- V
--30
IT00087
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Total Gate Charge, Qg -- nC
1.6
IT00088
PD -- Ta
0.30
Allowable Power Dissipation, PD -- W
VGS -- Qg
--10
f=1MHz
0.25
0.20
0.15
0.10
0.05
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT02382
Note on usage : Since the 3LP01C is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of March, 2009. Specifications and information herein are subject
to change without notice.
PS No.6645-4/4