VISHAY UFB60FA60P

UFB60FA60P
Vishay Semiconductors
Insulated Ultrafast Rectifier Module, 60 A
FEATURES
• Two fully independent diodes
• Ceramic fully insulated package
(VISOL = 2500 VAC)
• Ultrafast reverse recovery
• Ultrasoft reverse recovery current shape
• Low forward voltage
SOT-227
• Optimized for power conversion: welding and industrial
SMPS applications
• Industry standard outline
• Plug-in compatible with other SOT-227 packages
• Easy to assemble
• Direct mounting to heatsink
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
PRODUCT SUMMARY
VR
The UFB60FA60P insulated modules integrate two state of
the art Vishay Semiconductors ultrafast recovery rectifiers in
the compact, industry standard SOT-227 package. The
planar structure of the diodes, and the platinum doping life
time control, provide an ultrasoft recovery current shape,
together with the best overall performance, ruggedness,
and reliability characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be a predominant portion of the total energy, such as in
the output rectification stage of welding machines, SMPS,
and dc-to-dc converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
600 V
IF(AV) per module at TC = 107 °C
60 A
trr
79 ns
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
600
V
Cathode to anode voltage
VR
Continuous forward current per diode
IF
TC = 85 °C
44
Single pulse forward current per diode
IFSM
TC = 25 °C
280
PD
TC = 85 °C
120
Maximum power dissipation per module
RMS isolation voltage
VISOL
Operating junction and storage temperatures
Document Number: 94564
Revision: 21-Jul-10
TJ, TStg
Any terminal to case, t = 1 min
A
W
2500
V
- 55 to 175
°C
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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UFB60FA60P
Insulated Ultrafast
Rectifier Module, 60 A
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Cathode to anode breakdown voltage
Forward voltage
VBR
VFM
TEST CONDITIONS
MIN.
TYP.
MAX.
600
-
-
IF = 30 A
-
1.32
1.69
IF = 60 A
-
1.52
1.9
IR = 100 μA
IF = 30 A
IRM
Junction capacitance
CT
V
-
1.14
1.39
-
1.38
1.66
VR = VR rated
-
0.1
100
μA
TJ = 175 °C, VR = VR rated
-
0.2
1.0
mA
VR = 600 V
-
50
-
pF
UNITS
TJ = 125 °C
IF = 60 A
Reverse leakage current
UNITS
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
trr
Peak recovery current
IRRM
Reverse recovery charge
Qrr
MIN.
TYP.
MAX.
TJ = 25 °C
TEST CONDITIONS
-
79
118
TJ = 125 °C
-
155
209
IF = 30 A
dIF/dt = 200 A/μs
VR = 200 V
TJ = 25 °C
TJ = 125 °C
-
6
10
-
14
20
TJ = 25 °C
-
234
590
TJ = 125 °C
-
1085
2090
MIN.
TYP.
MAX.
-
-
1.5
-
-
0.75
-
0.05
-
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case,
single leg conducting
Junction to case,
both leg conducting
Case to heatsink
SYMBOL
TEST CONDITIONS
RthJC
RthCS
Flat, greased surface
UNITS
°C/W
Weight
-
30
-
g
Mounting torque
-
1.3
-
N·m
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94564
Revision: 21-Jul-10
UFB60FA60P
Insulated Ultrafast
Rectifier Module, 60 A
Vishay Semiconductors
1000
1000
175°C
Reverse Current - IR (μA)
100
125°C
10
1
0.1
25°C
0.01
0.001
100
Tj = 175°C
200
300
400
500
600
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
10
Junction Capacitance - C T (pF)
Instantaneous Forward Current - I F (A)
100
Tj = 125°C
Tj = 25°C
1
100
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
10
Forward Voltage Drop - VF (V)
100
1000
Reverse Voltage - VR (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
(Per Diode)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Thermal Impedance Z thJC (°C/W)
10
D = 0.75
D = 0.5
1
D = 0.33
D = 0.25
D = 0.2
Single Pulse
(Thermal Resistance)
0.1
1E-03
1E -0 2
1E-01
1E+00
t 1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Diode)
Document Number: 94564
Revision: 21-Jul-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
UFB60FA60P
Insulated Ultrafast
Rectifier Module, 60 A
Vishay Semiconductors
200
Vr = 200V
175
150
If = 30A, 125°C
150
trr (ns)
Allowable Case Temperature (°C)
200
DC
100
50
125
100
Square wave (D=0.50)
80% rated Vr applied
If = 30A, 25°C
see note 1
75
0
0
10
20
30
40
50
60
70
Average Forward Current - IF(AV) (A)
50
100
1000
dI F /dt (A/μs )
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
1750
Vr = 200V
1500
If = 30A, 125°C
50
1250
DC
40
1000
RMS Limit
30
Qrr (nC)
Average Power Loss ( W )
60
D = 0.2
D = 0.25
D = 0.33
D = 0.5
D = 0.75
20
750
500
10
If = 30A, 25°C
0
0
10
20
30
40
50
Average Forward Current - IF(AV) (A)
250
0
1 00
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
1000
dI F /dt (A/μs )
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94564
Revision: 21-Jul-10
UFB60FA60P
Insulated Ultrafast
Rectifier Module, 60 A
Vishay Semiconductors
30
Vr = 200V
25
Irr (A)
20
If = 30A, 125°C
15
If = 30A, 25°C
10
5
0
100
1000
dI F /dt (A/μs )
Fig. 9 - Typical Stored Current vs. dIF/dt
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
G
IRFP250
S
Fig. 10 - Reverse Recovery Parameter Test Circuit
Document Number: 94564
Revision: 21-Jul-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
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UFB60FA60P
Insulated Ultrafast
Rectifier Module, 60 A
Vishay Semiconductors
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(4) Qrr - area under curve defined by trr
and IRRM
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
Qrr =
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 11 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
UF
B
60
F
A
60
P
1
2
3
4
5
6
7
1
-
Ultrafast rectifier
2
-
Ultrafast Pt diffused
3
-
Current rating (60 = 60 A)
4
-
Circuit configuration (2 separate diodes, parallel pin-out)
5
-
Package indicator (SOT-227 standard isolated base)
6
-
Voltage rating (60 = 600 V)
7
-
P = Lead (Pb)-free
CIRCUIT CONFIGURATION
1
4
2
3
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95036
Packaging information
www.vishay.com/doc?95037
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94564
Revision: 21-Jul-10
Outline Dimensions
Vishay Semiconductors
SOT-227
DIMENSIONS in millimeters (inches)
38.30 (1.508)
37.80 (1.488)
Chamfer
2.00 (0.079) x 45°
4 x M4 nuts
Ø 4.40 (0.173)
Ø 4.20 (0.165)
-A3
4
6.25 (0.246)
12.50 (0.492)
25.70 (1.012)
25.20 (0.992)
-B-
1
2
R full
7.50 (0.295)
15.00 (0.590)
30.20 (1.189)
29.80 (1.173)
8.10 (0.319)
4x
7.70 (0.303)
2.10 (0.082)
1.90 (0.075)
0.25 (0.010) M C A M B M
2.10 (0.082)
1.90 (0.075)
-C-
12.30 (0.484)
11.80 (0.464)
0.12 (0.005)
Notes
• Dimensioning and tolerancing per ANSI Y14.5M-1982
• Controlling dimension: millimeter
Document Number: 95036
Revision: 28-Aug-07
For technical questions, contact: [email protected]
www.vishay.com
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Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
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Document Number: 91000
Revision: 11-Mar-11
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