4V Drive Pch MOSFET UM6J1N zDimensions (Unit : mm) zStructure Silicon P-channel MOSFET UMT6 2.0 0.9 1.3 zFeatures 1) Two RSU002P03 transistors in a single UMT package. 2) The MOSFET elements are independent, eliminating mutual interference. 3) Mounting cost and area can be cut in half. 0.65 0.65 0.7 (5) (4) 1.25 2.1 (6) (3) (1) (2) 0.2 0.15 0.1Min. 1pin mark Each lead has same dimensions Abbreviated symbol : J01 zApplications Switching zPackaging specifications Package Type zInner circuit (6) Taping (5) TN Code Basic ordering unit (pieces) (4) ∗1 3000 UM6J1N ∗2 ∗2 ∗1 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (3) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain zAbsolute maximum ratings (Ta=25°C) <It is the same ratings for Tr1 and Tr2.> Parameter Drain-source voltage Gate-source voltage Continuous Pulsed Drain current Symbol VDSS VGSS ID IDP ∗1 PD Total power dissipation Limits −30 ±20 ±0.2 ±0.4 150 120 150 −55 to +150 ∗2 Tch Tstg Channel temperature Range of storage temperature Unit V V A A mW / TOTAL mW / ELEMENT °C °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land zThermal resistance Parameter Channel to ambient Symbol Rth(ch-a) ∗ Limits Unit 833 1042 °C/W / TOTAL °C/W / ELEMENT ∗ Each terminal mounted on a recommended land www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/3 2009.04 - Rev.A Data Sheet UM6J1N zElectrical characteristics (Ta=25°C) <It is the same characteristics for Tr1 and Tr2.> Parameter Symbol Min. IGSS − Gate-source leakage Drain-source breakdown voltage V(BR) DSS −30 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −1.0 − Static drain-source on-state ∗ RDS (on) − resistance − Yfs ∗ 0.2 Forward transfer admittance Ciss − Input capacitance Coss − Output capacitance − Crss Reverse transfer capacitance − td (on) ∗ Turn-on delay time tr ∗ − Rise time td (off) ∗ − Turn-off delay time tf ∗ − Fall time Typ. Max. − − − − 0.9 1.4 1.6 − 30 4 5 8 5 30 40 ±10 − −1 −2.5 1.4 2.1 2.4 − − − − − − − − Unit µA V µA V Ω Ω Ω S pF pF pF ns ns ns ns VGS=±20V, VDS=0V ID= −1mA, VGS=0V VDS= −30V, VGS=0V VDS= −10V, ID= −1mA ID= −0.2A, VGS= −10V ID= −0.15A, VGS= −4.5V ID= −0.15A, VGS= −4V VDS= −10V, ID= −0.15A VDS= −10V VGS=0V f=1MHz VDD −15V ID= −0.15A VGS= −10V RL 100Ω RG=10Ω Conditions Max. −1.2 Unit V Conditions IS= −0.1A, VGS=0V ∗ Pulsed zBody diode characteristics (source-drain) Parameter Symbol Forward voltage ∗ VSD Min. − Typ. − ∗Pulsed zElectrical characteristic curves Crss Coss tf GATE-SOURCE VOLTAGE : −VGS (V) 10 Ta=25°C VDD= −15V VGS= −10V RG=10Ω Pulsed 100 td(off) td(on) 10 tr 1 0.01 0.1 1 10 0.1 VDS= −10V Pulsed Ta=125°C 0.1 75°C 25°C −25°C 0.01 0.001 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 GATE-SOURCE VOLTAGE : −VGS (V) Fig.4 Typical Transfer Characteristics www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 3 2 1 0.2 0.4 0.6 0.8 1 TOTAL GATE CHARGE : Qg (nC) Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics 1 Ta=25°C Pulsed 15 ID= −125mA ID= −200mA 10 5 0 0 4 0 1 20 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (Ω) DRAIN CURRENT : −ID (A) 1 5 DRAIN CURRENT : −ID (A) DRAIN-SOURCE VOLTAGE : −VDS (V) Fig.1 Typical Capacitance vs. Drain-Source Voltage Ta=25°C VDD= −15V ID=−200mA RG=10Ω 6 Pulsed 7 0 1 0.01 100 1 2 3 4 5 6 7 8 9 10 GATE-SOURCE VOLTAGE : −VGS (V) Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 2/3 REVERSE DRAIN CURRENT : −IS (A) Ciss 8 1000 Ta=25°C f=1MHz VGS=0V SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 100 VGS=0V Pulsed Ta=125°C 75°C 25°C −25°C 0.1 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 SOURCE-DRAIN VOLTAGE : −VSD (V) Fig.6 Reverse Drain Current vs. Source-Drain Voltage 2009.04 - Rev.A Data Sheet UM6J1N 10 Ta=125°C 75°C 25°C −25°C 1 0.1 0.01 0.1 1 DRAIN CURRENT : −ID (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) 10 75°C 25°C −25°C 1 0.1 0.01 0.1 1 DRAIN CURRENT : −ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) 10 VGS= −4.5V Pulsed Ta=125°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) VGS= −10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) 10 Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙ ) VGS= −4V Pulsed Ta=125°C 75°C 25°C −25°C 1 0.1 0.01 0.1 1 DRAIN CURRENT : −ID (A) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙΙ ) Ta=25°C Pulsed VGS= −4V VGS= −4.5V VGS= −10V 1 0 0.01 0.1 1 DRAIN CURRENT : −ID (A) Fig.10 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) zNotice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 3/3 2009.04 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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