1.2V Drive Nch + Nch MOSFET UM6K33N Dimensions (Unit : mm) Structure Silicon N-channel MOSFET UMT6 (SC-88) <SOT-363> Features 1) High speed switing. 2) Small package(UMT6). 3) Ultra low voltage drive(1.2V drive). (6) (1) (5) (2) (4) (3) Application Switching Abbreviated symbol : K33 Packaging specifications Package Type Code Basic ordering unit (pieces) UM6K33N Inner circuit Taping TN 3000 (6) ∗2 ∗2 ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Source current (Body Diode) (4) ∗1 Drain current (5) Continuous Pulsed Continuous Pulsed Power dissipation Channel temperature Range of storage temperature Limits Unit VDSS VGSS 50 8 V V ID IDP Is Isp 200 800 125 800 mA mA mA mA PD *1 *1 *2 Tch Tstg (1) Tr1 SOURCE (2) Tr1 GATE (3) Tr2 DRAIN (4) Tr2 SOURCE (5) Tr2 GATE (6) Tr1 DRAIN 150 mW / TOTAL 120 mW / ELEMENT 150 C 55 to +150 C *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land. Thermal resistance Parameter Channel to ambient Symbol * Rth (ch-a) Limits Unit 833 1042 °C / W /TOTAL °C / W /ELEMENT * Each terminal mounted on a recommended land. www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 1/5 2010.01 - Rev.A UM6K33N Data Sheet Electrical characteristics (Ta = 25C) <It is the same ratings for Tr1 and Tr2.> Parameter Gate-source leakage Symbol Gate threshold voltage Typ. Max. Unit Conditions - - 10 A VGS=8V, VDS=0V 50 - - V ID=1mA, VGS=0V IDSS - - 1 A VDS=50V, VGS=0V VGS (th) 0.3 - 1.0 V VDS=10V, ID=1mA - 1.6 2.2 - 1.7 2.4 IGSS Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current Min. ID=200mA, VGS=4.5V ID=200mA, VGS=2.5V Static drain-source on-state resistance RDS (on)* Forward transfer admittance l Yfs l* 0.4 - - S ID=200mA, VDS=10V Input capacitance Ciss - 25 - pF VDS=10V Output capacitance Coss - 6 - pF VGS=0V Reverse transfer capacitance Crss - 3 - pF f=1MHz Turn-on delay time td(on) * - 4 - ns ID=100mA, VDD 30V tr * - 6 - ns VGS=4.5V td(off) * - 15 - ns RL=300 tf * - 55 - ns RG=10 Rise time Turn-off delay time Fall time - 1.9 2.7 - 2.0 4.0 ID=100mA, VGS=1.8V ID=40mA, VGS=1.5V - 2.4 7.2 ID=20mA, VGS=1.2V *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) <It is the same ratings for Tr1 and Tr2.> Parameter Forward voltage Symbol VSD * Min. Typ. Max. - - 1.2 Unit V Conditions Is=200mA, VGS=0V *Pulsed www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 2/5 2010.01 - Rev.A UM6K33N Data Sheet Electrical characteristic curves 0.4 0.3 Ta=25°C Pulsed VGS= 1.2V 0.2 VGS= 1.0V 0.1 1 VGS= 4.5V VGS= 2.5V VGS=1.8V VGS=1.5V 0.3 Ta=25°C Pulsed VGS=1.2V 0.2 VGS=1.0V 0.1 0 0.6 0.8 1 0 2 10 1 0.1 0.01 0.1 VGS= 4.5V Pulsed 1 0.1 0.01 1 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[] 1 0.1 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( IV ) www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ VGS= 1.5V Pulsed 10 1 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.1 1 DRAIN-CURRENT : ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( V ) 3/5 2 VGS= 2.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 1 0.1 0.01 0.1 1 DRAIN-CURRENT : ID[A] 1 0.1 0.01 1.5 100 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( II ) 100 1 Fig.3 Typical Transfer Characteristics DRAIN-CURRENT : ID[A] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.5 GATE-SOURCE VOLTAGE : VGS[V] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 DRAIN-CURRENT : ID[A] VGS= 1.8V Pulsed 0 10 100 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( I ) 100 8 Fig.2 Typical Output Characteristics( II ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[] VGS=1.2V VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.5V 6 DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics( I ) Ta= 25°C Pulsed 4 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[] 0.4 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.01 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( III ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[] 0.2 0.1 0.001 0 0 VDS= 10V Pulsed VGS=0.8V VGS= 0.8V 100 DRAIN CURRENT : ID[A] VGS= 4.5V VGS= 2.5V VGS=1.8V VGS=1.5V DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A] 0.4 100 VGS= 1.2V Pulsed 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1 0.1 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.9 Static Drain-Source On-State Resistance vs. Drain Current( VI ) 2010.01 - Rev.A 1 VDS= 10V Pulsed Ta= -25°C Ta=25°C Ta=75°C Ta=125°C VGS=0V Pulsed 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.01 0.1 0.001 0.01 0.1 0 1 DRAIN-CURRENT : ID[A] 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD [V] Fig.10 Forward Transfer Admittance vs. Drain Current Fig.11 Reverse Drain Current vs. Sourse-Drain Voltage 1000 10 Ta=25°C Pulsed 9 8 ID= 20mA 7 6 ID=200mA 5 4 3 2 1 0 0 5 10 GATE-SOURCE VOLTAGE : VGS[V] Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage 1000 Ta=25°C VDD=30V VGS=4.5V tf 100 CAPACITANCE : C [pF] SWITCHING TIME : t [ns] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[] 1 Data Sheet SOURCE CURRENT : Is [A] FORWARD TRANSFER ADMITTANCE : |Yfs| [S] UM6K33N RG=10 Pulsed td(off) tr 10 100 Ta=25°C f=1MHz VGS=0V Ciss 10 Crss 1 Coss td(on) 1 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.13 Switching Characteristics www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 0.1 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage 4/5 2010.01 - Rev.A UM6K33N Data Sheet Measurement circuits Pulse width VGS ID VDS 50% 10% D.U.T. RG 90% 50% 10% VGS VDS RL VDD 10% 90% td(on) tr ton 90% td(off) tf toff Fig.1-2 Switching waveforms Fig.1-1 Switching time measurement circuit Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 5/5 2010.01 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). 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