EMZ1 / UMZ1N / IMZ1A Transistors General purpose transistor (dual transistors) EMZ1 / UMZ1N / IMZ1A zExternal dimensions (Unit : mm) zFeatures 1) Both a 2SA1037AK chip and 2SC2412K chip in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. (3) 0.22 (4) (5) (2) (6) 0.5 0.5 1.0 1.6 EMZ1 (1) 0.5 0.13 1.2 1.6 Each lead has same dimensions ROHM : EMT6 1.25 1.3 2.0 (3) (2) (1) (6) (5) 0.2 (4) UMZ1N 0.65 zStructure NPN / PNP epitaxial planar silicon transistor 0.65 Abbreviated symbol : Z1 0.1Min. EMZ1 / UMZ1N (3) (2) IMZ1A (4) (1) (5) Tr1 0to0.1 0.7 0.15 zEquivalent circuit 0.9 2.1 Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 Abbreviated symbol : Z1 (6) Tr1 Tr2 Tr2 (1) (1) (3) (4) (5) (2) (2) (6) (3) (6) 0.3 (5) 0.95 0.95 1.9 2.9 IMZ1A (4) 1.6 Symbol Limits Tr1 Tr2 Collector-base voltage VCBO 60 −60 V Collector-emitter voltage VCEO 50 −50 V Emitter-base voltage VEBO 7 −6 V 150 −150 mA Collector current EMZ1, UMZ1N Power dissipation IMZ1A IC PC 150 (TOTAL) 0.8 0.15 0.3to0.6 Unit mW 300 (TOTAL) Junction temperature Tj 150 ˚C Storage temperature Tstg −55 to +150 ˚C 0to0.1 Parameter 1.1 2.8 zAbsolute maximum ratings (Ta = 25°C) Each lead has same dimensions ROHM : SMT6 EIAJ : SC-74 Abbreviated symbol : Z1 ∗1 ∗2 ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. Rev.A 1/4 EMZ1 / UMZ1N / IMZ1A Transistors zElectrical characteristics (Ta = 25°C) Tr1 (NPN) Parameter Conditions Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 60 − − V IC=50µA Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA Emitter-base breakdown voltage BVEBO 7 − − V IE=50µA Collector cutoff current ICBO − − 0.1 µA VCB=60V Emitter cutoff current IEBO − − 0.1 µA VEB=7V VCE (sat) − − 0.4 V IC/IB=50mA/5mA hFE 120 − 560 − VCE=6V, IC=1mA fT − 180 − Cob − 2 3.5 Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance MHz VCE=12V, IE=−2mA, f=100MHz VCB=12V, IE=0A, f=1MHz PF Tr2 (PNP) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO −60 − − V IC=−50µA Collector-emitter breakdown voltage BVCEO −50 − − V IC=−1mA Emitter-base breakdown voltage BVEBO −6 − − V IE=−50µA Collector cutoff current ICBO − − −0.1 µA VCB=−60V Emitter cutoff current IEBO − − −0.1 µA VEB=−6V VCE (sat) − − −0.5 V IC/IB=−50mA/−5mA hFE 120 − 560 − VCE=−6V, IC=−1mA fT − 140 − MHz VCE=−12V, IE=2mA, f=100MHz Cob − 4 5 PF Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance VCB=−12V, IE=0A, f=1MHz zPackaging specifications Package Type Taping Code T2R TR T108 Basic ordering unit (pieces) 8000 3000 3000 EMZ1 UMZ1N IMZ1A zElectrical characteristic curves Tr1 (NPN) 10 2 1 25˚C −55˚C 5 0.5 0.2 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics 0.50mA mA 0.45 A 0.40m 0.35mA Ta=25˚C 80 0.30mA 0.25mA 60 0.20mA 0.15mA 40 0.10mA 20 0.05mA IB=0A 0 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics ( I ) 10 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 20 0.1 0 100 VCE=6V Ta=100˚C COLLECTOR CURRENT : IC (mA) 50 30µA Ta=25˚C 27µA 8 24µA 21µA 6 18µA 15µA 12µA 4 9µA 6µA 2 3µA 0 0 IB=0A 4 8 12 16 20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Grounded emitter output characteristics ( II ) Rev.A 2/4 EMZ1 / UMZ1N / IMZ1A 500 Ta=25˚C VCE=5V 3V 1V 200 100 50 25˚C 200 −55˚C 100 50 20 20 0.5 1 2 5 10 20 10 0.2 50 100 200 COLLECTOR CURRENT : IC (mA) Fig.5 IC/IB=10 0.2 Ta=100˚C 25˚C −55˚C 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) 20 Ta=25˚C f=1MHz IE=0A IC=0A Cib 5 2 Co b 1 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.10 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 2 5 10 20 50 100 200 0.5 Ta=25˚C 0.2 IC/IB=50 20 10 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 Ta=100˚C 25˚C −55˚C 0.1 0.05 0.02 0.01 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) Ta=25˚C VCE=6V IC/IB=50 0.2 0.2 0.5 Fig.6 Collector-emitter saturation voltage vs. collector current ( I ) DC current gain vs. collector current ( II ) 50 100 500 200 100 50 −0.5 −1 −2 −5 −10 −20 −50 −100 EMITTER CURRENT : IE (mA) COLLECTOR CURRENT : IC (mA) Fig.8 Collector-emitter saturation voltage vs. collector current ( III ) Fig.7 Collector-emitter saturation voltage vs. collector current ( II ) 10 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) DC current gain vs. collector current ( I ) 0.5 1 COLLECTOR CURRENT : IC (mA) BASE COLLECTOR TIME CONSTANT : Cc rbb' (ps) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) Fig.4 0.5 TRANSITION FREQUENCY : fT (MHz) 10 0.2 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) VCE=5V Ta=100˚C DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 500 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) Transistors Fig.9 Gain bandwidth product vs. emitter current Ta=25˚C f=32MHZ VCB=6V 200 100 50 20 10 −0.2 −0.5 −1 −2 −5 −10 EMITTER CURRENT : IE (mA) Fig.11 Base-collector time constant vs. emitter current Rev.A 3/4 EMZ1 / UMZ1N / IMZ1A Transistors Tr2 (PNP) −10 −5 −2 −1 −0.5 −0.2 −28.0 −8 −24.5 −21.0 −6 −17.5 −14.0 −4 −10.5 −7.0 −2 −3.5µA −0.8 −1.2 −1.6 −60 −500 −450 −400 −350 −300 −250 −200 −150 −40 −100 −20 −50µA −2 −5 −10 −20 −40˚C 200 100 50 VCE=−6V −50 −100 −0.2 COLLECTOR CURRENT : IC (mA) −1 −0.5 −0.2 −0.1 Ta=100˚C 25˚C −40˚C −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR CURRENT : IC (mA) Fig.18 Collector-emitter saturation voltage vs. collector current ( II ) −2 −5 −10 −20 −50 −100 −1 −5 1000 Ta=25˚C VCE=−12V 500 200 100 50 0.5 1 2 5 10 20 50 100 EMITTER CURRENT : IE (mA) Fig.19 Gain bandwidth product vs. emitter current Ta=25˚C −0.5 −0.2 IC/IB=50 −0.1 20 10 −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR CURRENT : IC (mA) Fig.17 Collector-emitter saturation voltage vs. collector current ( I ) Fig.16 DC current gain vs. collector current ( II ) TRANSITION FREQUENCY : fT (MHz) lC/lB=10 −0.5 −1 COLLECTOR CURRENT : IC (mA) Fig.15 DC current gain vs. collector current ( I ) −4 Fig.14 Grounded emitter output characteristics ( II ) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) −0.5 −1 −3 Fig.13 Grounded emitter output characteristics ( I ) 50 −0.2 −2 COLLECTOR TO EMITTER VOLTAGE : VCE (V) 25˚C 100 −1 0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Ta=100˚C 200 IB=0 −2.0 500 VCE=−5V −3V −1V Ta=25˚C DC CURRENT GAIN : hFE 500 −0.4 0 Fig.12 Grounded emitter propagation characteristics COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) −80 Ta=25˚C IB=0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 BASE TO EMITTER VOLTAGE : VBE (V) DC CURRENT GAIN : hFE −100 −31.5 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) −0.1 −35.0 Ta=25˚C COLLECTOR CURRENT : IC (mA) −20 −10 VCE=−6V Ta=100˚C 25˚C −40˚C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) −50 20 Ta=25˚C f=1MHz IE=0A IC=0A Cib 10 Co b 5 2 -0.5 -1 -2 -5 -10 -20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.20 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1