Transistors with built-in Resistor UNR4221/4222/4223/4224 (UN4221/4222/4223/4224) Unit: mm Silicon NPN epitaxial planar type 15.6±0.5 • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • New S type package, allowing supply with the radial taping ■ Resistance by Part Number (UN4221) (UN4222) (UN4223) (UN4224) 0.45+0.20 –0.10 (R1) 2.2 kΩ 4.7 kΩ 10 kΩ 2.2 kΩ Symbol 0.45+0.20 –0.10 (2.5) (2.5) (R2) 2.2 kΩ 4.7 kΩ 10 kΩ 10 kΩ 0.7±0.1 1 2 3 1: Emitter 2: Collector 3: Base NS-B1 Package Internal Connection ■ Absolute Maximum Ratings Ta = 25°C Parameter (0.8) 0.75 max. ■ Features UNR4221 UNR4222 UNR4223 UNR4224 7.6 (0.8) 3.0±0.2 For digital circuits • • • • 2.0±0.2 4.0±0.2 Rating R1 Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V Collector current IC 500 mA Total power dissipation PT 300 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C C B R2 E ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 1.0 µA Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 1.0 µA Emitter-base UNR4221 IEBO VEB = 6 V, IC = 0 5.0 mA cutoff current UNR4222 (Collector open) UNR4223/4224 Forward current UNR4221 transfer ratio Conditions Min Max Unit 2.0 1.0 hFE VCE = 10 V, IC = 100 mA UNR4222 50 60 VCE(sat) IC = 100 mA, IB = 5 mA Output voltage high-level VOH VCC = 5 V, VB = 0.5 V, RL = 500 Ω Output voltage low-level VOL VCC = 5 V, VB = 3.5 V, RL = 500 Ω 40 UNR4223/4224 Collector-emitter saturation voltage Typ 0.25 4.9 V V 0.2 V Note) The part numbers in the parenthesis show conventional part number. Publication date: December 2003 SJH00021BED 1 UNR4221/4222/4223/4224 ■ Electrical Characteristics (continued) Ta = 25°C ± 3°C Parameter Symbol Transition frequency fT Input resistance R1 UNR4221/4224 Conditions Min Typ VCB = 10 V, IE = −50 mA, f = 200 MHz Max Unit 200 −30% UNR4222 2.2 MHz +30% kΩ 4.7 UNR4223 10 Resistance ratio R1/R2 UNR4224 0.8 1.0 1.2 0.17 0.22 0.27 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT Ta Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (°C) Characteristics charts of UNR4221 Ta = 25°C Collector current IC (mA) 250 0.9 mA 0.8 mA 200 0.7 mA 0.6 mA 150 0.5 mA 100 0.4 mA 0.3 mA 50 0.2 mA 0 0 2 4 6 8 0.1 mA 10 12 Collector-emitter voltage VCE (V) 2 102 hFE IC 400 IC / IB = 10 VCE = 10 V Forward current transfer ratio hFE IB = 1.0 mA VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IC VCE 300 10 1 Ta = 75°C 25°C 10−1 300 Ta = 75°C 200 25°C 100 −25°C 10−2 −25°C 0 1 10 102 Collector current IC (mA) SJH00021BED 103 1 10 102 Collector current IC (mA) 103 UNR4221/4222/4223/4224 IO VIN 16 15 8 102 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) 20 VIN IO 104 f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 24 102 10 VO = 0.2 V Ta = 25°C 10 1 10−1 4 0 10−1 1 1 0.4 102 10 Collector-base voltage VCB (V) 0.6 0.8 1.0 1.2 10−2 10−1 1.4 1 102 10 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR4222 IB = 1.0 mA 0.9 mA 0.8 mA 200 0.7 mA 0.6 mA 150 0.5 mA 100 0.4 mA 0.3 mA 50 0.2 mA 0.1 mA 0 0 2 4 6 8 10 12 102 IC / IB = 10 1 Ta = 75°C 25°C 10−1 25°C −25°C 100 50 10−2 1 102 10 0 103 1 IO VIN 104 8 6 4 102 103 VIN IO 102 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 10 Collector current IC (mA) Collector current IC (mA) Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Ta = 75°C 150 −25°C Cob VCB 10 VCE = 10 V 10 Collector-emitter voltage VCE (V) 12 hFE IC 200 Forward current transfer ratio hFE Ta = 25°C 250 Collector current IC (mA) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IC VCE 300 102 10 VO = 0.2 V Ta = 25°C 10 1 10−1 2 0 10−1 1 10 Collector-base voltage VCB (V) 102 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) SJH00021BED 1.4 10−2 10−1 1 10 102 Output current IO (mA) 3 UNR4221/4222/4223/4224 Characteristics charts of UNR4223 VCE(sat) IC Collector current IC (mA) 200 IB = 1.0 mA 0.9 mA 0.8 mA 160 120 0.7 mA 0.6 mA 0.5 mA 80 0.4 mA 0.3 mA 40 0.2 mA 0.1 mA 0 0 2 4 6 8 10 102 IC / IB = 10 1 Ta = 75°C 25°C 10 −1 −25°C 10−2 12 1 Ta = 75°C 100 −25°C 50 0 103 10 1 6 4 103 VIN IO 102 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) 8 102 Collector current IC (mA) IO VIN 103 f = 1 MHz IE = 0 Ta = 25°C 25°C 150 Collector current IC (mA) Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 102 10 Cob VCB 10 VCE = 10 V 10 Collector-emitter voltage VCE (V) 12 hFE IC 200 Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE 240 102 10 VO = 0.2 V Ta = 25°C 10 1 10−1 2 0 10−1 1 1 0.4 102 10 0.6 0.8 1.0 1.2 10−2 10−1 1.4 Input voltage VIN (V) Collector-base voltage VCB (V) 1 10 102 Output current IO (mA) Characteristics charts of UNR4224 VCE(sat) IC Collector current IC (mA) 250 IB = 1.0 mA 200 150 0.9 mA 0.8 mA 0.7 mA 100 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 50 0.1 mA 0 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) 4 102 hFE IC 200 IC / IB = 10 VCE = 10 V Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE 300 10 1 Ta = 75°C 25°C 10−1 Ta = 75°C 25°C 150 −25°C 100 50 −25°C 10−2 0 1 10 102 Collector current IC (mA) SJH00021BED 103 1 10 102 Collector current IC (mA) 103 UNR4221/4222/4223/4224 IO VIN 104 10 8 5 4 VIN IO 103 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 12 102 10 VO = 0.2 V Ta = 25°C 102 10 1 2 0 10−1 1 10 Collector-base voltage VCB (V) 102 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) SJH00021BED 1.4 10−1 10−1 1 10 102 Output current IO (mA) 5 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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