Small Signal Transistor Arrays UNA0222 (UN222) Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) Unit: mm For motor drives 12° ■ Absolute Maximum Ratings Ta = 25°C NPN Overall 6.5±0.3 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −10 V Collector-emitter voltage (Base open) VCEO −10 V Collector current IC −3 A Peak collector current ICP −4 A Collector-base voltage (Emitter open) VCBO 10 V Collector-emitter voltage (Base open) VCEO 10 V IC 3 A Peak collector current ICP 4 A Total power dissipation 12° 1: Collector 2: Base 3: Collector 4: Base 5: Collector 6: Base 7: Emitter 8: Collector 9: Base 13: Base 10: Collector 14: Emitter 11: Base 12: Collector SO14-G1 Package Marking Symbol: UN222 Internal Connection 14 13 12 11 10 9 8 Collector current * 0.8 1.5±0.1 1.5+0.2 –0.1 Parameter 0.5 4 5 6 7 0.9±0.1 0.5±0.2 12 3 45° • Small and lightweight • Low power consumption (low VCE(sat) transistor used) • Low voltage drive • Transistors with built-in resistor with 6 elements incorporated 5.5±0.3 7.7±0.3 ■ Features PNP 0.2+0.1 –0.0 0.4±0.1 14 13 12 11 10 9 8 PT 0.5 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1 2 3 4 5 6 7 Note) *: When the dissipation on one device is TC = 25°C Note) The part number in the parenthesis shows conventional part number. Publication date: March 2004 SJK00046BED 1 UNA0222 ■ Electrical Characteristics Ta = 25°C ± 3°C • PNP Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −10 Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0 −10 Collector-base cutoff current (Emitter open) ICBO VCB = −6 V, IE = 0 hFE VCE = −1 V, IC = − 0.5 A VCE(sat) IC = −2 A, IB = −50 mA Forward current transfer ratio Collector-emitter saturation voltage Conditions Min Typ Max Unit V V 200 −1 µA 700 − 0.45 V VCB = −6 V, IE = 50 mA, f = 200 MHz 150 MHz Collector output capacitance (Common base, input open circuited) Cob VCB = −6 V, IE = 0, f = 1 MHz 70 pF Forward voltage *1 VF IF = −1 A Transition frequency Bias resistance *2 fT REB −1.5 V −30% 10 +30% kΩ Min Typ Max Unit • NPN Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 10 V Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 10 V Collector-base cutoff current (Emitter open) ICBO VCB = 6 V, IE = 0 Forward current transfer ratio hFE VCE = 1 V, IC = 0.5 A VCE(sat) IC = 2 A, IB = 50 mA Collector-emitter saturation voltage Conditions 200 1 µA 700 0.25 V VCB = 6 V, IE = −50 mA, f = 200 MHz 150 MHz Cob VCB = 6 V, IE = 0, f = 1 MHz 50 pF Forward voltage *1 VF IF = 1 A Bias resistance *2 REB Transition frequency Collector output capacitance (Common base, input open circuited) fT −30% 10 1.5 V +30% kΩ Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Application to the built-in diode *2: Application to the built-in resistance 2 SJK00046BED UNA0222 Common characteristics chart PT Ta Total power dissipation PT (W) 0.6 0.5 0.4 0.3 0.2 0.1 0 0 40 80 120 160 Ambient temperature Ta (°C) Characteristics charts of PNP transistor block VCE(sat) IC Collector current IC (A) −5 −4 IB = −12 mA −3 −8 mA −10 mA −6 mA −4 mA −2 −2 mA −1 0 −2 0 −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) −10 hFE IC −1 −10−1 Ta = 75°C 25°C −25°C −10−2 −10−3 − 0.01 600 IC / IB = 40 Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE −6 − 0.1 −1 Collector current IC (A) −10 500 VCE = −1 V Ta = 75°C 25°C −25°C 400 300 200 100 0 − 0.01 − 0.1 −1 −10 Collector current IC (A) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 240 f = 1 MHz IE = 0 Ta = 25°C 200 160 120 80 40 0 −1 −10 −100 Collector-base voltage VCB (V) SJK00046BED 3 UNA0222 Characteristics charts of NPN transistor block VCE(sat) IC Collector current IC (A) 5 4 IB = 12 mA 3 10 mA 8 mA 2 6 mA 4 mA 1 0 2 mA 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) 10 IC / IB = 40 1 Ta = 75°C 25°C −25°C 10−1 10−2 10−3 0.01 0.1 Collector output capacitance C (pF) (Common base, input open circuited) ob f = 1 MHz IE = 0 Ta = 25°C 200 160 120 80 40 0 1 10 100 Collector-base voltage VCB (V) 4 1 Collector current IC (A) Cob VCB 240 hFE IC 600 Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE 6 SJK00046BED 10 VCE = 1 V 500 Ta = 75°C 25°C 400 −25°C 300 200 100 0 0.01 0.1 1 Collector current IC (A) 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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