Composite Transistors UP01213 Silicon NPN epitaxial planar type Unit: mm +0.05 (0.30) 4 (0.20) 5˚ 1.20±0.05 For digital circuits 1.60±0.05 5 0.10±0.02 0.20 –0.02 • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half 2 3 (0.50) (0.50) (0.20) 1 ■ Features 1.00±0.05 1.60±0.05 5˚ ■ Basic Part Number 0.10 max 0.55±0.05 Display at No.1 lead 0 to 0.02 • UNR1213 × 2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V Collector current IC 100 mA Total power dissipation PT 125 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 1: Base (Tr1) 2: Emitter 3: Base (Tr2) 4: Collector (Tr2) 5: Collector (Tr1) SSMini5-F2 Package Marking Symbol: 9L Internal Connection (C1) 5 (C2) 4 Tr1 Tr2 R1 (47 kΩ) R1 (47 kΩ) R2 R2 (47 kΩ) (47 kΩ) 1 (B1) 2 (E) 3 (B2) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.1 mA Forward current transfer ratio hFE VCE = 10 V, IC = 5 mA Collector-emitter saturation voltage VCE(sat) Conditions VOH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ Output voltage low-level VOL VCC = 5 V, VB = 3.5 V, RL = 1 kΩ R1 Resistance ratio R1 / R 2 Transition frequency fT Typ 0.25 0.8 Unit 4.9 −30% VCB = 10 V, IE = −2 mA, f = 200 MHz Max 80 IC = 10 mA, IB = 0.3 mA Output voltage high-level Input resistance Min V V 0.2 V 47 +30% kΩ 1.0 1.2 150 MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: August 2004 SJJ00298AED 1 UP01213 120 120 100 80 60 40 Ta = 25°C 0.8 mA 0.6 mA 0.5 mA 100 0.4 mA 0.7 mA 80 0.3 mA 60 0.2 mA 40 20 0 40 80 0 120 0 Ambient temperature Ta (°C) 2 4 6 8 10 12 100 IC / IB = 10 10 1 Ta = 85°C 0.1 0.001 0.1 1 10 100 Collector current IC (mA) IO VIN 100 VCE = 10 V −25°C 25°C 0.01 Collector-emitter voltage VCE (V) hFE IC 350 VIN IO 100 VO = 5 V Ta = 25°C VO = 0.2 V Ta = 25°C 25°C 250 200 −25°C 150 100 Input voltage VIN (V) Ta = 85°C 300 Output current IO (mA) Forward current transfer ratio hFE IB = 1.0 mA 0.9 mA 0.1 mA 20 0 10 1 10 1 50 0 1 10 Collector current IC (mA) 2 VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IC VCE 140 Collector current IC (mA) Total power dissipation PT (mW) PT Ta 140 100 0.1 0 2 4 6 8 Input voltage VIN (V) SJJ00298AED 10 0.1 1 10 Output current IO (mA) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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