DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1916 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING (Unit: mm) DESCRIPTION • 1.8 V drive available • Low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A) RDS(on)2 = 49 mΩ MAX. (VGS = –3.0 V, ID = –2.5 A) RDS(on)3 = 55 mΩ MAX. (VGS = –2.5 V, ID = –2.5 A) RDS(on)4 = 98 mΩ MAX. (VGS = –1.8 V, ID = –1.5 A) µPA1916TE +0.1 0.65–0.15 5 4 1 2 3 0 to 0.1 0.65 0.95 1.9 0.9 to 1.1 2.9 ±0.2 1, 2, 5, 6 : Drain 3 : Gate 4 : Source PACKAGE Note 6 0.95 ORDERING INFORMATION PART NUMBER 0.16+0.1 –0.06 1.5 FEATURES 0.32 +0.1 –0.05 2.8 ±0.2 The µPA1916 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. SC-95 (Mini Mold Thin Type) EQUIVALENT CIRCUIT Note Marking: TL Drain ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS –12 V Gate to Source Voltage (VDS = 0 V) VGSS m8.0 V Drain Current (DC) (TA = 25°C) ID(DC) m4.5 A ID(pulse) m18 A PT1 0.2 W Drain Current (pulse) Note1 Total Power Dissipation (TA = 25°C) Note2 PT2 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Total Power Dissipation (TA = 25°C) Body Diode Gate Gate Protection Diode Source Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board, t ≤ 5 sec. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G15635EJ1V0DS00 (1st edition) Date Published December 2001 NS CP(K) Printed in Japan © 2001 µ PA1916 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = –12 V, VGS = 0 V –10 µA Gate Leakage Current IGSS VGS = m8.0 V, VDS = 0 V m10 µA –1.5 V Gate Cut-off Voltage VGS(off) Forward Transfer Admittance Drain to Source On-state Resistance VDS = –10 V, ID = –1.0 mA –0.45 –0.8 | yfs | VDS = –10 V, ID = –2.5 A 3.0 S RDS(on)1 VGS = –4.5 V, ID = –2.5 A 30 39 mΩ RDS(on)2 VGS = –3.0 V, ID = –2.5 A 36 49 mΩ RDS(on)3 VGS = –2.5 V, ID = –2.5 A 41 55 mΩ RDS(on)4 VGS = –1.8 V, ID = –1.5 A 59 98 mΩ Input Capacitance Ciss VDS = –10 V 950 pF Output Capacitance Coss VGS = 0 V 330 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 170 pF Turn-on Delay Time td(on) VDD = –6.0 V, ID = –2.5 A 15 ns VGS = –4.0 V 15 ns RG = 10 Ω 140 ns 120 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = –10 V 8.0 nC Gate to Source Charge QGS VGS = –4.0 V 1.5 nC Gate to Drain Charge QGD ID = –4.5 A 2.5 nC IF = 4.5 A, VGS = 0 V 0.84 V Diode Forward Voltage VF(S-D) TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE VGS(−) D.U.T. VGS RL RG PG. Wave Form 0 VGS 10 % VDS(−) VDD PG. 90 % 90 % VDS VDS VGS (−) 0 Wave Form 10 % 10 % 0 td(on) τ tr ton td(off) tf toff τ = 1 µs Duty Cycle ≤ 1% 2 D.U.T. 90 % Data Sheet G15635EJ1V0DS IG = −2 mA RL 50 Ω VDD µ PA1916 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA FORWARD BIAS SAFE OPERATING AREA −100 80 60 40 30 60 90 120 −0.1 Pulsed ID - Drain Current - A −8 −1.8 V TA = 125˚C 75˚C −0.1 −0.01 TA = 25˚C −25˚C −0.001 −0.0001 0 0 VGS(off) - Gate to Source Cut-off Voltage - V VDS = −10 V −1 −0.2 −0.4 −0.6 −0.8 −1 −0.00001 −1 0 −2 −3 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT −1.2 VDS = −10 V ID = −1 mA −0.7 −0.2 −50 0 50 100 150 | yfs | - Forward Transfer Admittance - S ID - Drain Current - A −2.5 V −4 −100 −10 −4.0 V −12 −10 −1 FORWARD TRANSFER CHARACTERISTICS −100 VGS = −4.5 V ms VDS - Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE −16 =1 10 ms 10 0m s 5s ID(DC) −0.01 −0.1 150 PW Single Pulse Mounted on 250 mm2 x 35 µ m copper pad connected to drain erectrode in 50 mm x 50 mm x 1.6 mm FR-4 board. TA - Ambient Temperature - ˚C −20 ID(pulse) d ite V) Lim 4.5 − −1 20 0 0 n) S(o RD GS = V (@ −10 ID - Drain Current - A dT - Derating Factor - % 100 100 VDS = −10 V 10 TA = −25˚C 25˚C 75˚C 125˚C 1 0.1 0.01 −0.01 Tch - Channel Temperature - ˚C −0.1 −1 −10 −100 ID - Drain Current - A Data Sheet G15635EJ1V0DS 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 VGS = −1.8 V 80 TA = 125°C 75°C 60 25°C −25°C 40 −0.01 −0.1 −1 −10 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ µ PA1916 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 VGS = −2.5 V 80 60 TA = 125°C 75°C 25°C 40 −25°C 20 −0.01 −0.1 60 TA = 125°C 75°C 40 25°C −25°C 30 20 −0.01 −0.1 −1 −10 −100 RDS(on) - Drain to Source On-state Resistance - mΩ VGS = −3.0 V −100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 60 VGS = −4.5 V 50 40 TA = 125°C 30 25°C 75°C −25°C 20 10 −0.01 −0.1 −1 −10 −100 ID - Drain Current - A ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 ID = −2.5 A 80 VGS = −1.8 V 60 −2.5 V −3.0 V −4.5 V 40 20 0 −50 0 50 100 150 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ 4 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 50 −10 ID - Drain Current - A ID - Drain Current - A 70 −1 120 ID = −2.5 A 100 80 60 40 20 0 0 Tch - Channel Temperature - ˚C Data Sheet G15635EJ1V0DS −2 −4 −6 VGS - Gate to Source Voltage - V −8 µ PA1916 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS 1000 f = 1 MHz VGS = 0 V 1000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 10000 Ciss Coss Crss 100 10 −0.1 −10 −1.0 td(off) tf 100 td(on) 10 tr VDD = −6.0 V VGS = −4.0 V RG = 10 Ω 1 −0.1 −100 −1 ID - Drain Current - A VDS - Drain to Source Voltage - V SOURCE TO DRAIN DIODE FORWARD VOLTAGE DYNAMIC INPUT/OUTPUT CHARACTERISTICS −5 ID = −4.5 A VGS - Gate to Drain Voltage - V 10 1 0.1 0.6 0.8 1.0 −4 −3 −2 −1 0 1.2 VDD = −10 V −6.0 V 2 0 VSD - Source to Drain Voltage - V 4 6 8 10 QG - Gate Charge - nC TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - °C/W ISD - Diode Forward Current - A 100 0.01 0.4 −10 Single Pulse Without board 100 Mounted on 250mm2 × 35 µm copper pad connected to drain electrode in 50mm × 50mm×1.6mm FR-4 board 10 1 0.001 0.01 0.1 1 10 100 1000 PW - Pulse Width - s Data Sheet G15635EJ1V0DS 5 µ PA1916 [MEMO] 6 Data Sheet G15635EJ1V0DS µ PA1916 [MEMO] Data Sheet G15635EJ1V0DS 7 µ PA1916 • The information in this document is current as of December, 2001. 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