Data Sheet μPA2600T1R R07DS0998EJ0100 Rev.1.00 Jan 15, 2013 N-CHANNEL MOSFET 20 V, 7.0 A, 13.8 mΩ Description The μPA2600T1R is N-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. Features • High Drain to Source Voltage ⎯ VDSS = 20 V (VGS = 0 V, TA = 25°C) • 2.5V drive available • Low on-state resistance ⎯ RDS (on)1 = 13.8 mΩ MAX. (VGS = 4.5 V, ID = 3.5 A) ⎯ RDS (on)2 = 19.1 mΩ MAX. (VGS = 2.5 V, ID = 3.5 A) • Built-in gate protection diode • Lead-free and Halogen-free 6pinHUSON2020 Ordering Information Part Number Package μPA2600T1R-E2-AX∗1 6pinHUSON2020 Note: ∗1.Pb-free (This product does not contain Pb in the external electrode and other parts.) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25 °C) Drain Current (pulse) ∗1 Total Power Dissipation (5 s) ∗2 Channel Temperature Storage Temperature Symbol VDSS VGSS ID(DC) ID(pulse) PT Tch TSTG Ratings Unit 20 ±12 ±7.0 ±28 2.4 150 –55 to +150 V V A A W °C °C Notes: ∗1. PW≤10 μs, Duty Cycle≤1% ∗2. Mounted on glass epoxy board of 25.4mm x 25.4mm x 0.8mmt R07DS0998EJ0100 Rev.1.00 Jan 15, 2013 Page 1 of 6 μPA2600T1R Electrical Characteristics (TA = 25°C) Characteristics Symbol Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance ∗1 IDSS IGSS VGS(off) | yfs | RDS(on)1 Drain to Source On-state Resistance ∗1 TYP. 0.5 6.5 11.1 14.4 870 170 110 12 10 42 9 7.9 1.7 2.8 RDS(on)2 Ciss Coss Crss td (on) tr td (off) tf QG QGS QGD Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage ∗1 Note: MIN. MAX. Unit 1.0 ±10 1.5 μA μA 13.8 19.1 1.5 VF(S–D) V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Test Conditions VDS = 20 V, VGS = 0 V VGS =±10 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10V, ID = 3.5 A VGS = 4.5 V, ID = 3.5 A VGS = 2.5 V, ID = 3.5 A VDS = 10 V, VGS = 0 V, f = 1.0 MHz ID = 3.5 A, VDD = 10 V, VGS = 4 V, RG = 6 Ω ID = 7.0 A , VDD = 16 V, VGS = 10 V IF = 7.0 A, VGS = 0 V ∗1. Pulsed TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS RL VGS RG PG. Wave Form VDD 0 VGS 10% IG = 2 mA RL 50 Ω VDD 90% PG. VDS 90% VGS 0 90% VDS VDS τ τ = 1 μs Duty Cycle ≤ 1% R07DS0998EJ0100 Rev.1.00 Jan 15, 2013 10% 0 10% Wave Form td(on) tr ton td(off) tf toff Page 2 of 6 μPA2600T1R Characteristics (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE TOTAL POWER DISSIPATION vs. OPERATING AREA AMBIENT TEMPERATURE 140 3 120 2.5 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % Typical 100 80 60 40 20 2 1.5 1 Mounted on a glass expoxy board of 25.4mm x 25.4mm 0.8mmt PW=5sec 0.5 0 0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 TA -Ambient Temperature - °C TA -Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 ID – Drain Current - A ID(pulse)=28A 10 ID(DC)=7A 1 Power Dissipation Limited 0.1 TA=25ºC Single Pulse Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt 0.01 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 1000 Single pulse Rth(ch-a)=113.6ºC/W 100 10 1 0.1 0.01 100 μ R07DS0998EJ0100 Rev.1.00 Jan 15, 2013 Rth(ch-A) : Mounted on a glass expoxy board of 25.4mm x 25.4mm 0.8mmt 1m 10 m 100 m 1 PW - Pulse Width - s 10 100 1000 Page 3 of 6 μPA2600T1R DRAIN CURRENT vs. FORWARD TRANSFER CHARACTERISTICS DRAIN TO SOURCE VOLTAGE 10 50 VGS=4.5V 2.5V 30 20 TA=150°C 75°C 25°C -55°C 1 ID - Drain Current - A ID –Drain Current - A 40 0.1 0.01 10 0.001 VDS = 10V Pulsed Pulsed 0 0 0.5 1 1.5 0.0001 2 0 0.5 2 GATE TO SOURCE CUT-OFF VOLTAGE vs. FORWARD TRANSFER ADMITTANCE vs. CHANNEL TEMPERATURE DRAIN CURRENT 1.2 100 0.8 0.6 0.4 0.2 VDS = 10V ID = 1mA 0.0 -50 0 50 100 150 10 TA = 150°C 75°C 25°C -55°C 1 0.1 S 1.0 0.01 VDS = 10V Pulsed 0.001 0.001 0.01 Tch - Channel Temperature - °C 0.1 1 10 100 ID – Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE VOLTAGE 40 Pulsed 30 20 VGS = 2.5V 10 4.5V 0 0.1 1 10 ID - Drain Current - A R07DS0998EJ0100 Rev.1.00 Jan 15, 2013 100 RDS(on) – Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ 1.5 VGS - Gate to Source Voltage - V | yfs | - Forward Transfer Admittance - S VGS(off) – Gate to Source Cut-off Voltage - V VDS - Drain to Source Voltage - V 1 50 ID = 3.5A Pulsed 40 30 20 10 0 0 2 4 6 8 10 VGS - Gate to Source Voltage - V Page 4 of 6 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CAPACITANCE vs. DRAIN TO SOURCE CHANNEL TEMPERATURE VOLTAGE 25 Ciss, Coss, Crss - Capacitance - pF Pulsed ID = 3.5A 20 VGS = 2.5V 15 4.5V 10 5 10,000 1,000 Ciss Coss 100 Crss VGS = 0V f = 1.0MHz 10 0 -50 0 50 100 0.1 150 10 100 VDS – Drain to Source Voltage - V Tch - Channel Temperature - °C SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 10 25 td(off) td(on) 10 tr tf VDD = 10V VGS = 4.0V RG = 6Ω 1 0.1 1 10 100 VDS - Drain to Source Voltage - V 100 td(on), tf, td(off), tr - Switching Time -ns 1 VGS VDS 20 VDD= 20V 16V 10V 8 15 6 10 4 5 2 ID=7.0A 0 0 2 4 6 0 8 QG - Gate Charge - nC ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE IF - Diode Forward Current – A 100 Pulsed VGS=4.5V 2.5V 10 0V 1 0 0.5 1 1.5 VF(S–D) - Drain to Source Voltage - V R07DS0998EJ0100 Rev.1.00 Jan 15, 2013 Page 5 of 6 VGS - Gate to Source Voltage - V RDS(on) –Drain to Source On-state Resistance - mΩ μPA2600T1R μPA2600T1R Package Drawings (Unit: mm) 6pinHUSON2020 B 0.3 ± 0.05 1 ± 0.05 2 ± 0.1 0.25 ± 0.05 4 2 1 0.65 ± 0.03 Max.0.75 0.7 ± 0.04 0 to 0.01 0.2 ± 0.03 0.65 ± 0.03 6 4 3 0.05 S 5 1.5 ± 0.05 2 ± 0.1 A 1.6 1 ± 0.05 0.2 0.3 ± 0.05 0.05 M S A B 1,2,5,6 : Drain 3 : Gate 4 : Source S RENESAS Package code : PWSN0006JD-B Equivalent Circuit Drain Body Diode Gate Gate Protection Diode Remark Source The diode connected between the gate and source of the transistor serves as a protector against ESD. 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