DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8179TK SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8179TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wide band matched IC. µPC8179TK adopts 6-pin lead-less minimold package using same chip as the conventional µPC8179TB in 6-pin super minimold. TK suffix IC which is smaller package than TB suffix IC contributes to reduce mounting space by 50%. This IC is manufactured using our 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. FEATURES • Low current consumption : ICC = 4.0 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • Excellent isolation : ISL = 43.0 dB TYP. @ f = 1.0 GHz ISL = 42.0 dB TYP. @ f = 1.9 GHz ISL = 42.0 dB TYP. @ f = 2.4 GHz • Power gain : GP = 13.5 dB TYP. @ f = 1.0 GHz GP = 15.5 dB TYP. @ f = 1.9 GHz GP = 16.0 dB TYP. @ f = 2.4 GHz • Gain 1 dB compression output power : PO (1 dB) = +2.0 dBm TYP. @ f = 1.0 GHz PO (1 dB) = +0.5 dBm TYP. @ f = 1.9 GHz PO (1 dB) = +0.5 dBm TYP. @ f = 2.4 GHz • Operating frequency : 0.1 to 2.4 GHz (Output port LC matching) • High-density surface mounting : 6-pin lead-less minimold package (1.5 × 1.3 × 0.55 mm) • Light weight : 3 mg (Standard value) APPLICAION • Buffer amplifiers on 0.1 to 2.4 GHz mobile communications system Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10059EJ02V0DS (2nd edition) Date Published April 2005 CP(K) Printed in Japan The mark shows major revised points. NEC Compound Semiconductor Devices, Ltd. 2002, 2005 µPC8179TK ORDERING INFORMATION Part Number µPC8179TK-E2 Order Number µPC8179TK-E2-A Package Marking 6-pin lead-less minimold 6C (1511) (Pb-Free) Supplying Form • Embossed tape 8 mm wide Note • Pin 1, 6 face the perforation side of the tape • Qty 5 kpcs/reel Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact your nearby sales office. Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPC8179TK PRODUCT LINE-UP (TA = +25°C, VCC = Vout = 3.0 V, ZS = ZL = 50 Ω) Parameter 1.0 GHz output port 1.66 GHz output port 1.9 GHz output port 2.4 GHz output port matching frequency matching frequency matching frequency matching frequency Marking ICC GP ISL PO (1dB) GP ISL PO (1dB) GP ISL PO (1dB) GP ISL PO (1dB) (mA) (dB) (dB) (dBm) (dB) (dB) (dBm) (dB) (dB) (dBm) (dB) (dB) (dBm) µPC8178TB 1.9 11.0 39.0 −4.0 − − − 11.5 40.0 −7.0 11.5 38.0 −7.5 C3B µPC8178TK 1.9 11.0 40.0 −5.5 − − − 11.0 41.0 −8.0 11.0 42.0 −8.0 6B µPC8179TB 4.0 13.5 44.0 +3.0 − − − 15.5 42.0 +1.5 15.5 41.0 +1.0 C3C µPC8179TK 4.0 13.5 43.0 +2.0 − − − 15.5 42.0 +0.5 16.0 42.0 +0.5 6C µPC8128TB 2.8 12.5 39.0 −4.0 13.0 39.0 −4.0 13.0 37.0 −4.0 − − − C2P µPC8151TB 4.2 12.5 38.0 +2.5 15.0 36.0 +1.5 15.0 34.0 +0.5 − − − C2U µPC8152TB 5.6 23.0 40.0 −4.5 19.5 38.0 −8.5 17.5 35.0 −8.5 − − − C2V Part No. Remarks 1. Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. 2. To know the associated product, please refer to each latest data sheet. 2 Data Sheet PU10059EJ02V0DS µPC8179TK SYSTEM APPLICATION EXAMPLE Location examples in digital cellular Low Noise Tr. RX I Q DEMOD. SW ÷N PLL PLL I 0˚ TX φ PA 90˚ Q These ICs can be added to your system around parts, when you need more isolation or gain. The application herein, however, shows only examples, therefore the application can depend on your kit evaluation. Data Sheet PU10059EJ02V0DS 3 µPC8179TK PIN CONNECTIONS (Bottom View) (Top View) 2 6C 1 3 6 6 1 5 5 2 4 4 3 Pin No. Pin Name 1 INPUT 2 GND 3 GND 4 OUTPUT 5 GND 6 VCC PIN EXPLANATION Pin Pin No. Name 1 INPUT Applied Pin Voltage (V) Voltage Note (V) − 0.90 Function and Applications Internal Equivalent Circuit Signal input pin. A internal matching circuit, configured with resisters, enables 50 Ω connection over a wide band. This pin must be coupled to signal source with capacitor for DC cut. 2 GND 0 − Ground pin. This pin should be 3 connected to system ground with 5 minimum inductance. Ground 6 4 pattern on the board should be formed as wide as possible. All the ground pins must be connected together with wide ground pattern to decrease impedance defference. 4 OUTPUT Voltage − Signal output pin. This pin is de- as same signed as collector output. Due to as VCC the high impedance output, this pin through should be externally equipped with external LC matching circuit to next stage. inductor For L, a size 1 005 chip inductor can be chosen. 6 VCC 2.4 to 3.3 − Power supply pin. This pin should be externally equipped with bypass capacitor to minimize its impedance. Note Pin voltage is measured at VCC = 3.0 V. 4 Data Sheet PU10059EJ02V0DS 2 3 1 5 µPC8179TK ABSOLUTE MAXIMUM RATINGS Parameter Symbol Test Conditions Ratings Unit Supply Voltage VCC TA = +25°C, Pin 4, Pin 6 3.6 V Circuit Current ICC TA = +25°C 15 mA Power Dissipation PD TA = +85°C 232 mW Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Tstg −55 to +150 °C Input Power Pin +5 dBm Note TA = +25°C Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB RECOMMENDED OPERATING RANGE Parameter Supply Voltage Symbol MIN. TYP. MAX. Unit Remarks VCC 2.4 3.0 3.3 V The same voltage should be applied to pin 4 and pin 6. Operating Ambient Temperature TA −40 +25 +85 °C ELECTRICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C, VCC = Vout = 3.0 V, ZS = ZL = 50 Ω, at LC matched frequency) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Circuit Current ICC No signal 2.9 4.0 5.4 mA Power Gain GP f = 1.0 GHz, Pin = −30 dBm 11.0 13.5 15.5 dB f = 1.9 GHz, Pin = −30 dBm 13.0 15.5 17.5 f = 2.4 GHz, Pin = −30 dBm 14.0 16.0 18.5 f = 1.0 GHz, Pin = −30 dBm 39.0 43.0 − f = 1.9 GHz, Pin = −30 dBm 37.0 42.0 − f = 2.4 GHz, Pin = −30 dBm 37.0 42.0 − f = 1.0 GHz −0.5 +2.0 − f = 1.9 GHz −2.0 +0.5 − f = 2.4 GHz −3.0 +0.5 − f = 1.0 GHz − 5.0 6.5 f = 1.9 GHz − 5.0 6.5 f = 2.4 GHz − 5.0 6.5 f = 1.0 GHz, Pin = −30 dBm 4.0 7.0 − f = 1.9 GHz, Pin = −30 dBm 4.0 7.0 − f = 2.4 GHz, Pin = −30 dBm 6.0 9.0 − Isolation Gain 1 dB Compression Output ISL PO (1 dB) Power Noise Figure Input Return Loss NF RLin Data Sheet PU10059EJ02V0DS dB dBm dB dB 5 µPC8179TK TEST CIRCUITS <1> f = 1.0 GHz Output port matching circuit C6 C5 VCC C4 L1 6 C1 C2 4 1 IN C3 OUT DUT Strip Line : 1 mm Strip Line : 5 mm 2, 3, 5 <2> f = 1.9 GHz Output port matching circuit C7 C6 C5 VCC C4 L1 6 C1 IN C2 4 1 C3 OUT DUT Strip Line : 7 mm 2, 3, 5 <3> f = 2.4 GHz Output port matching circuit C6 C5 C4 VCC C3 L2 6 C1 IN 1 4 C2 L1 OUT DUT Strip Line : 4 mm 2, 3, 5 Strip Line : 3 mm 6 Data Sheet PU10059EJ02V0DS µPC8179TK ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD <1> f = 1.0 GHz VCC C6 IN VCC C4 OUT C5 Top View 6C L1 C1 C2 C3 Mounting direction µPC8179TK Remarks 1. 42 × 35 × 0.4 mm double-sided copper-clad polyimide board 2. Back side: GND pattern 3. Gold plated on pattern 4. :Through holes COMPONENT LIST Form Symbol Value Type code Maker C1, C3 1 000 pF GRM40CH102J50PT murata C2 0.75 pF GRM39CKR75C50PT murata C4 5 pF GRM39CH050C50PT murata C5 8 pF GRM39CH080D50PT murata Feed-though Capacitor C6 1 000 pF DFT301-801 × 7R102S50 murata Chip inductor L1 12 nH LL1608-FH12N TOKO Chip capacitor Data Sheet PU10059EJ02V0DS 7 µPC8179TK <2> f = 1.9 GHz C5 VCC C7 IN VCC C4 Top View OUT C6 6C L1 C1 C2 C3 Mounting direction µPC8179TK Remarks 1. 42 × 35 × 0.4 mm double-sided copper-clad polyimide board 2. Back side: GND pattern 3. Gold plated on pattern 4. :Through holes COMPONENT LIST Form Symbol Value Type code Maker C1, C3, C5, C6 1 000 pF GRM40CH102J50PT murata C2 0.5 pF GRM39CKR5C50PT murata C4 8 pF GRM39CH080D50PT murata Feed-though Capacitor C7 1 000 pF DFT301-801 × 7R102S50 murata Chip inductor L1 2.7 nH LL1608-FH2N7S TOKO Chip capacitor 8 Data Sheet PU10059EJ02V0DS µPC8179TK <3> f = 2.4 GHz VCC C4 C6 IN VCC OUT Top View C5 C3 6C L2 C1 L1 C2 Mounting direction µPC8179TK Remarks 1. 42 × 35 × 0.4 mm double-sided copper-clad polyimide board 2. Back side: GND pattern 3. Gold plated on pattern 4. :Through holes COMPONENT LIST Form Symbol Value Type code Maker C1, C2, C4, C5 1 000 pF GRM40CH102J50PT murata C3 10 pF GRM39CH100D50PT murata Feed-though Capacitor C6 1 000 pF DFT301-801 × 7R102S50 murata Chip inductor L1 2.7 nH LL1608-FH2N7S TOKO L2 1.8 nH LL1608-FH1N8S TOKO Chip capacitor Data Sheet PU10059EJ02V0DS 9 µPC8179TK TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) CIRCUIT CURRENT vs. SUPPLY VOLTAGE 6.0 TA = +25˚C Circuit Current ICC (mA) 5.0 +50˚C 4.0 +85˚C 3.0 2.0 1.0 0 –40˚C 0.5 1.0 1.5 –20˚C 2.0 2.5 3.0 3.5 4.0 Supply Voltage VCC (V) Remark The graph indicates nominal characteristics. 10 Data Sheet PU10059EJ02V0DS µPC8179TK f = 1.0 GHz MATCHING S22-FREQUENCY S11-FREQUENCY 1: 76.586 Ω –65.898 Ω 2.4152 pF 1: 64.07 Ω 2.8164 Ω 448.24 pH MARKER 1 1.0 GHz MARKER 1 1.0 GHz 1 1 VCC = 3.0 V ICC = 4.23 mA Pin = –30 dBm START 100.000 000 MHz STOP 3 100.000 000 MHz VCC = 3.0 V ICC = 4.23 mA Pin = –30 dBm START 100.000 000 MHz S12-FREQUENCY S11-FREQUENCY S11 log 0 MAG 2 dB/ REF 0 dB 1: –7.7054 dB Pin = –30 dBm, MARKER 1 f = 1.0 GHz –2 –4 –6 1 2.4 V VCC = 2.7 V –8 –10 –12 3.0 V S12 log MAG 5 dB/ REF –20 dB 1: –43.627 dB –20 Pin = –30 dBm, –25 MARKER 1 f = 1.0 GHz –30 VCC = 2.4 V –35 2.7 V 3.0 V 1 –40 3.3 V –45 –50 3.3 V –14 –55 –16 –60 –18 –65 –20 START 100.000 000 MHz STOP 3 100.000 000 MHz –70 START 100.000 000 MHz MAG 2 dB/ REF 0 dB 1: 13.368 dB Pin = –30 dBm, MARKER 1 f = 1.0 GHz 18 2 dB/ REF 0 dB 1: –15.922 dB VCC = 2.4 V 2.7 V 3.0 V 3.3 V –6 –8 VCC = 3.3 V –10 3.0 V 8 –12 –14 6 4 MAG –4 1 12 10 S22 log 0 –2 16 14 STOP 3 100.000 000 MHz S22-FREQUENCY S21-FREQUENCY S21 log 20 STOP 3 100.000 000 MHz 2.7 V 2 0 START 100.000 000 MHz –16 2.4 V –18 STOP 3 100.000 000 MHz 1 Pin = –30 dBm, MARKER 1 f = 1.0 GHz –20 START 100.000 000 MHz STOP 3 100.000 000 MHz Remark The graphs indicate nominal characteristics. Data Sheet PU10059EJ02V0DS 11 µPC8179TK S11-FREQUENCY S11 log 0 MAG 2 dB/ REF 0 dB S12-FREQUENCY 1: –7.4331 dB Pin = –30 dBm, VCC = 3.0 V MARKER 1 f = 1.0 GHz –2 1 –10 –45 –12 +25˚C –60 –18 –65 –20 START 100.000 000 MHz STOP 3 100.000 000 MHz 2 dB/ REF 0 dB 1: 13.617 dB S22 log 0 2 dB/ –4 REF 0 dB 1: –9.8258 dB TA = –40˚C +25˚C +85˚C –6 14 –8 12 TA = –40˚C 1 –10 +25˚C –12 –14 6 –16 4 +85˚C 0 START 100.000 000 MHz –18 STOP 3 100.000 000 MHz Pin = –30 dBm, VCC = 3.0 V MARKER 1 f = 1.0 GHz –20 START 100.000 000 MHz Remark The graphs indicate nominal characteristics. 12 MAG –2 1 8 STOP 3 100.000 000 MHz S22-FREQUENCY Pin = –30 dBm, VCC = 3.0 V MARKER 1 f = 1.0 GHz 18 +85˚C –70 START 100.000 000 MHz S21-FREQUENCY MAG +25˚C 1 –55 –16 2 1: –40.365 dB –50 +85˚C –14 10 REF –20 dB Pin = –30 dBm, VCC = 3.0 V MARKER 1 f = 1.0 GHz –35 TA = –40˚C –40 16 5 dB/ –30 TA = –40˚C –8 S21 log 20 MAG –25 –4 –6 S12 log –20 Data Sheet PU10059EJ02V0DS STOP 3 100.000 000 MHz µPC8179TK OUTPUT POWER vs. INPUT POWER OUTPUT POWER vs. INPUT POWER 10 10 VCC = 3.3 V 0 2.4 V 2.7 V –5 TA = –40˚C 5 3.0 V Output Power Pout (dBm) Output Power Pout (dBm) 5 –10 –15 0 +85˚C –5 –10 –15 –20 –20 f = 1.0 GHz –25 –30 –20 –10 0 –25 –30 10 OIP3 = 11.2 dBm Pout (des) –10 Pout (undes) –20 IM3 (des) –30 –40 IM3 (undes) –50 –60 VCC = 2.4 V f1 = 1 000 MHz f2 = 1 001 MHz –10 0 –70 –80 –30 –20 Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 20 0 OIP3 = 12.0 dBm Pout (des) Pout (undes) –20 IM3 (undes) –30 IM3 (des) –40 –50 –60 –70 –80 –30 –20 VCC = 3.0 V f1 = 1 000 MHz f2 = 1 001 MHz –10 0 Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 0 –10 0 10 OUTPUT POWER, IM3 vs. INPUT POWER 10 OIP3 = 12.0 dBm Pout (des) 0 –10 Pout (undes) –20 IM3 (des) –30 –40 IM3 (undes) –50 –60 VCC = 2.7 V f1 = 1 000 MHz f2 = 1 001 MHz –10 0 –70 –80 –30 –20 Input Power Pin (dBm) 20 –10 –20 20 Input Power Pin (dBm) 10 f = 1.0 GHz VCC = 3.0 V Input Power Pin (dBm) Input Power Pin (dBm) 10 +25˚C OUTPUT POWER, IM3 vs. INPUT POWER 20 10 OIP3 = 12.6 dBm Pout (des) 0 –10 Pout (undes) –20 IM3 (des) –30 –40 IM3 (undes) –50 –60 –70 –80 –30 –20 VCC = 3.3 V f1 = 1 000 MHz f2 = 1 001 MHz –10 0 Input Power Pin (dBm) Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. Data Sheet PU10059EJ02V0DS 13 20 10 OIP3 = 12.4 dBm Pout (undes) 0 –10 Pout (des) –20 –30 IM3 (des) –40 IM3 (undes) –50 VCC = 3.0 V TA = –40˚C f1 = 1 000 MHz f2 = 1 001 MHz –60 –70 –80 –30 –20 –10 0 Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) OUTPUT POWER, IM3 vs. INPUT POWER OUTPUT POWER, IM3 vs. INPUT POWER 20 10 OIP3 = 12.0 dBm –10 –30 IM3 (des) –40 IM3 (undes) –50 –60 VCC = 3.0 V f1 = 1 000 MHz f2 = 1 001 MHz –10 0 –70 –80 –30 –20 Input Power Pin (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE 20 10 OIP3 = 10.4 dBm Pout (undes) 0 –10 Pout (des) –20 –30 IM3 (des) –40 IM3 (undes) –50 VCC = 3.0 V TA = +85˚C f1 = 1 000 MHz f2 = 1 001 MHz –60 –70 –80 –30 –20 –10 0 70 60 50 30 20 TA = +85˚C +25˚C 5 –40˚C 2 2.5 3 3.5 –5 0 Output Power of Each Tone Pout (each) (dBm) f = 1.0 GHz 4 2.4 V f1 = 1 000 MHz f2 = 1 001 MHz 0 –20 –15 –10 6 4.5 2.7 V 10 NOISE FIGURE vs. SUPPLY VOLTAGE 5.5 VCC = 3.0 V 3.3 V 40 6.5 Noise Figure NF (dB) Pout (des) –20 Input Power Pin (dBm) 4 Supply Voltage VCC (V) Remark The graphs indicate nominal characteristics. 14 Pout (undes) 0 Input Power Pin (dBm) 3rd Order Intermodulation Distortion IM3 (dBc) Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) µPC8179TK Data Sheet PU10059EJ02V0DS 5 µPC8179TK f = 1.9 GHz MATCHING S22-FREQUENCY S11-FREQUENCY 1: 36.523 Ω –50.693 Ω 1.6524 pF MARKER 1 1.9 GHz 1: 47.293 Ω –18.213 Ω 4.5993 pF MARKER 1 1.9 GHz 1 1 VCC = 3.0 V ICC = 4.23 mA Pin = –30 dBm START 100.000 000 MHz STOP 3 100.000 000 MHz VCC = 3.0 V ICC = 4.23 mA Pin = –30 dBm START 100.000 000 MHz S11-FREQUENCY S11 log 0 MAG 2 dB/ REF 0 dB S12-FREQUENCY VCC = 2.7 V S12 log MAG 5 dB/ REF –20 dB –20 –25 Pin = –30 dBm, MARKER 1 f = 1.9 GHz –30 2.4 V –35 1: –7.7246 dB –2 –4 –6 1 –8 1: –41.3 dB 1 –40 –10 –45 3.0 V –12 –50 3.3 V –14 –55 –16 VCC = 2.4 V 2.7 V 3.0 V 3.3 V –60 –18 Pin = –30 dBm, MARKER 1 f = 1.9 GHz –20 START 100.000 000 MHz STOP 3 100.000 000 MHz –65 –70 START 100.000 000 MHz S21-FREQUENCY 20 STOP 3 100.000 000 MHz S21 log MAG 2 dB/ 18 Pin = –30 dBm, MARKER 1 f = 1.9 GHz 16 REF 0 dB S22-FREQUENCY 1: 16.03 dB 12 2 dB/ REF 0 dB 1: –15.331 dB 3.0 V –6 –8 VCC = 2.4 V 2.7 V 3.0 V 3.3 V –10 10 –12 2.4 V –14 6 2.7 V –16 2 0 START 100.000 000 MHz MAG –4 VCC = 3.3 V 4 S22 log 0 –2 1 14 8 STOP 3 100.000 000 MHz STOP 3 100.000 000 MHz 1 –18 Pin = –30 dBm, MARKER 1 f = 1.9 GHz –20 START 100.000 000 MHz STOP 3 100.000 000 MHz Remark The graphs indicate nominal characteristics. Data Sheet PU10059EJ02V0DS 15 µPC8179TK S11-FREQUENCY S11 log 0 –2 MAG 2 dB/ REF 0 dB S12-FREQUENCY 1: –8.2556 dB Pin = –30 dBm, VCC = 3.0 V, MARKER 1 f = 1.9 GHz –4 TA = –40˚C –6 –35 +25˚C 1 –8 S12 log MAG 5 dB/ REF –20 dB –20 Pin = –30 dBm, VCC = 3.0 V, –25 MARKER 1 f = 1.9 GHz –30 TA = –40˚C 1 +25˚C –40 –45 –10 –50 –12 +85˚C –14 –55 –16 –60 –18 –65 –20 START 100.000 000 MHz STOP 3 100.000 000 MHz –2 14 –6 +25˚C S22 log 0 MAG 2 dB/ REF 0 dB –8 10 –10 TA = –40˚C +25˚C +85˚C –12 8 +85˚C 1: –16.419 dB –4 12 –14 –16 4 2 0 START 100.000 000 MHz STOP 3 100.000 000 MHz S22-FREQUENCY S21 log MAG 2 dB/ REF 0 dB 1: 15.717 dB 20 Pin = –30 dBm, 18 VCC = 3.0 V, TA = –40˚C MARKER 1 f = 1.9 GHz 1 16 6 +85˚C –70 START 100.000 000 MHz S21-FREQUENCY STOP 3 100.000 000 MHz 1 Pin = –30 dBm, –18 VCC = 3.0 V, –20 MARKER 1 f = 1.9 GHz START 100.000 000 MHz STOP 3 100.000 000 MHz Remark The graphs indicate nominal characteristics. 16 1: –41.365 dB Data Sheet PU10059EJ02V0DS µPC8179TK OUTPUT POWER vs. INPUT POWER OUTPUT POWER vs. INPUT POWER 10 10 3.3 V TA = –40˚C VCC = 3.0 V 5 Output Power Pout (dBm) Output Power Pout (dBm) 5 2.7 V 2.4 V 0 –5 –10 –15 –20 0 +25˚C +85˚C –5 –10 –15 –20 f = 1.9 GHz VCC = 3.0 V 0 10 f = 1.9 GHz –25 –30 –20 –10 0 –25 –30 10 Pout (des) 0 IM3 (undes) Pout (undes) –20 IM3 (des) –30 –40 –50 –60 VCC = 2.4 V f1 = 1 900 MHz f2 = 1 901 MHz –70 –80 –30 –20 –10 0 Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) OIP3 = 9.0 dBm OUTPUT POWER, IM3 vs. INPUT POWER 20 10 OIP3 = 9.7 dBm Pout (des) 0 IM3 (des) –10 Pout (undes) –20 IM3 (undes) –30 –40 –50 –60 –70 –80 –30 –20 VCC = 2.7 V f1 = 1 900 MHz f2 = 1 901 MHz –10 0 Input Power Pin (dBm) Input Power Pin (dBm) OUTPUT POWER, IM3 vs. INPUT POWER OUTPUT POWER, IM3 vs. INPUT POWER 20 10 OIP3 = 10.4 dBm Pout (des) 0 IM3 (des) –10 –20 Pout (undes) IM3 (undes) –30 –40 –50 –60 VCC = 3.0 V f1 = 1 900 MHz f2 = 1 901 MHz –70 –80 –30 –20 –10 0 Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 20 –10 –10 Input Power Pin (dBm) Input Power Pin (dBm) 10 –20 20 10 OIP3 = 10.5 dBm Pout (des) 0 IM3 (des) –10 –20 Pout (undes) IM3 (undes) –30 –40 –50 –60 VCC = 3.3 V f1 = 1 900 MHz f2 = 1 901 MHz –70 –80 –30 –20 –10 0 Input Power Pin (dBm) Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. Data Sheet PU10059EJ02V0DS 17 20 10 OIP3 = 10.8 dBm Pout (undes) 0 –10 Pout (des) –20 IM3 (des) –30 IM3 (undes) –40 –50 VCC = 3.0 V TA = –40˚C f1 = 1 900 MHz f2 = 1 901 MHz –60 –70 –80 –30 –20 –10 0 Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) OUTPUT POWER, IM3 vs. INPUT POWER OUTPUT POWER, IM3 vs. INPUT POWER 20 10 OIP3 = 10.4 dBm Pout (undes) 0 –10 Pout (des) –20 –40 –50 –60 –80 –30 –20 –10 0 OUTPUT POWER, IM3 vs. INPUT POWER 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE 20 OIP3 = 10.1 dBm 10 Pout (undes) 0 –10 Pout (des) –20 –30 IM3 (des) IM3 (undes) –40 –50 VCC = 3.0 V TA = +85˚C f1 = 1 900 MHz f2 = 1 901 MHz –60 –70 –80 –30 –20 –10 0 60 VCC = 3.0 V 50 3.3 V 40 2.4 V 30 2.7 V 20 10 f1 = 1 900 MHz f2 = 1 901 MHz 0 –20 NOISE FIGURE vs. SUPPLY VOLTAGE f = 1.9 GHz 6 5.5 TA = +85˚C 5 +25˚C 4.5 –40˚C 4 2 2.5 3 3.5 –15 –10 –5 0 Output Power of Each Tone Pout (each) (dBm) 6.5 Noise Figure NF (dB) VCC = 3.0 V f1 = 1 900 MHz f2 = 1 901 MHz –70 Input Power Pin (dBm) Input Power Pin (dBm) 4 Supply Voltage VCC (V) Remark The graphs indicate nominal characteristics. 18 IM3 (des) IM3 (undes) –30 Input Power Pin (dBm) 3rd Order Intermodulation Distortion IM3 (dBc) Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) µPC8179TK Data Sheet PU10059EJ02V0DS 5 µPC8179TK f = 2.4 GHz MATCHING S11-FREQUENCY S22-FREQUENCY 1: 44.846 Ω 11.99 Ω 795.13 pH 1: 26.719 Ω –37.301 Ω 1.7778 pF MARKER 1 2.4 GHz 1 MARKER 1 2.4 GHz 1 VCC = 3.0 V ICC = 4.23 mA Pin = –30 dBm START 100.000 000 MHz STOP 3 100.000 000 MHz VCC = 3.0 V ICC = 4.23 mA Pin = –30 dBm START 100.000 000 MHz S12-FREQUENCY S11-FREQUENCY S11 log 0 MAG 2 dB/ REF 0 dB 1: –9.4265 dB –2 VCC = 2.4 V –4 –6 2.7 V –8 1 –10 S12 log MAG 5 dB/ REF –20 dB 1: –42.425 dB –20 VCC = 2.4 V –25 Pin = –30 dBm, 2.7 V MARKER 1 f = 2.4 GHz 3.0 V –30 3.3 V –35 1 –40 –45 –12 –50 3.0 V –14 –55 3.3 V –16 –18 Pin = –30 dBm, MARKER 1 f = 2.4 GHz –20 START 100.000 000 MHz STOP 3 100.000 000 MHz –60 –65 –70 START 100.000 000 MHz S21-FREQUENCY S21 log MAG 2 dB/ REF 0 dB 20 18 Pin = –30 dBm, MARKER 1 f = 2.4 GHz 16 14 STOP 3 100.000 000 MHz S22-FREQUENCY 1: 16.497 dB S22 log 0 MAG 2 dB/ REF 0 dB 1: –16.926 dB –2 1 –4 –6 3.0 V –8 12 10 STOP 3 100.000 000 MHz 2.7 V VCC = 3.3 V 8 –10 2.4 V –12 VCC = 2.4 V 2.7 V 3.0 V 3.3 V 6 –14 4 –16 2 1 –18 Pin = –30 dBm, MARKER 1 f = 2.4 GHz –20 START 100.000 000 MHz STOP 3 100.000 000 MHz 0 START 100.000 000 MHz STOP 3 100.000 000 MHz Remark The graphs indicate nominal characteristics. Data Sheet PU10059EJ02V0DS 19 µPC8179TK S12-FREQUENCY S11-FREQUENCY S11 log 0 MAG 2 dB/ REF 0 dB 1: –9.4361 dB –2 –4 TA = –40˚C –6 +25˚C –8 1 –10 S12 log MAG 5 dB/ REF –20 dB 1: –41.826 dB –20 Pin = –30 dBm, –25 VCC = 3.0 V, MARKER 1 f = 2.4 GHz –30 TA = –40˚C –35 1 –40 –45 –12 –50 +85˚C –14 –55 –16 –60 Pin = –30 dBm, –18 VCC = 3.0 V, –20 MARKER 1 f = 2.4 GHz START 100.000 000 MHz STOP 3 100.000 000 MHz –65 REF 0 dB 18 VCC = 3.0 V, MARKER 1 f = 2.4 GHz 16 14 1: 16.148 dB S22 log 0 REF 0 dB 1: –15.993 dB –6 –8 –10 +85˚C –12 6 –14 4 –16 2 STOP 3 100.000 000 MHz TA = +85˚C 1 +25˚C Pin = –30 dBm, –40˚C –18 VCC = 3.0 V, –20 MARKER 1 f = 2.4 GHz START 100.000 000 MHz STOP 3 100.000 000 MHz Remark The graphs indicate nominal characteristics. 20 2 dB/ –4 10 0 START 100.000 000 MHz MAG –2 1 12 +25˚C STOP 3 100.000 000 MHz S22-FREQUENCY TA = –40˚C 8 +25˚C –70 START 100.000 000 MHz S21-FREQUENCY S21 log MAG 2 dB/ 20 Pin = –30 dBm, +85˚C Data Sheet PU10059EJ02V0DS µPC8179TK OUTPUT POWER vs. INPUT POWER OUTPUT POWER vs. INPUT POWER 10 10 VCC = 3.0 V TA = –40˚C 5 3.3 V 0 2.7 V –5 Output Power Pout (dBm) Output Power Pout (dBm) 5 2.4 V –10 –15 –20 0 –10 –15 –20 f = 2.4 GHz VCC = 3.0 V 0 10 f = 2.4 GHz –20 –10 0 –25 –30 10 –20 –10 Input Power Pin (dBm) OUTPUT POWER, IM3 vs. INPUT POWER OUTPUT POWER, IM3 vs. INPUT POWER 20 10 OIP3 = 9.1 dBm Pout (undes) 0 IM3 (undes) –10 Pout (des) –20 –30 IM3 (des) –40 –50 –60 –70 –80 –30 –20 VCC = 2.4 V f1 = 2 400 MHz f2 = 2 401 MHz –10 0 Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Input Power Pin (dBm) 20 10 OIP3 = 9.6 dBm Pout (undes) 0 IM3 (undes) –10 Pout (des) –20 IM3 (des) –30 –40 –50 –60 VCC = 2.7 V f1 = 2 400 MHz f2 = 2 401 MHz –70 –80 –30 –20 –10 0 Input Power Pin (dBm) Input Power Pin (dBm) OUTPUT POWER, IM3 vs. INPUT POWER OUTPUT POWER, IM3 vs. INPUT POWER 20 10 OIP3 = 10.1 dBm Pout (undes) 0 IM3 (undes) –10 –20 Pout (des) IM3 (des) –30 –40 –50 –60 VCC = 3.0 V f1 = 2 400 MHz f2 = 2 401 MHz –70 –80 –30 –20 –10 0 Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) –25 –30 Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) +85˚C +25˚C –5 20 10 OIP3 = 10.3 dBm 0 Pout (undes) IM3 (undes) –10 –20 Pout (des) IM3 (des) –30 –40 –50 –60 –70 –80 –30 Input Power Pin (dBm) –20 VCC = 3.3 V f1 = 2 400 MHz f2 = 2 401 MHz –10 0 Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. Data Sheet PU10059EJ02V0DS 21 20 10 OIP3 = 10.2 dBm Pout (undes) 0 IM3 (undes) –10 Pout (des) –20 IM3 (des) –30 –40 –50 VCC = 3.0 V TA = –40˚C f1 = 2 400 MHz f2 = 2 401 MHz –60 –70 –80 –30 –20 –10 0 Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) OUTPUT POWER, IM3 vs. INPUT POWER OUTPUT POWER, IM3 vs. INPUT POWER 20 10 OIP3 = 10.1 dBm –10 –30 IM3 (des) IM3 (undes) –40 –50 –60 VCC = 3.0 V f1 = 2 400 MHz f2 = 2 401 MHz –10 0 –70 –80 –30 –20 Input Power Pin (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE 20 10 OIP3 = 9.3 dBm Pout (undes) 0 –10 Pout (des) –20 IM3 (undes) –30 IM3 (des) –40 –50 VCC = 3.0 V TA = +85˚C f1 = 2 400 MHz f2 = 2 401 MHz –60 –70 –80 –30 –20 –10 0 60 50 VCC = 3.0 V 40 20 10 TA = +85˚C +25˚C 5 –40˚C 2 2.5 3 3.5 –15 –10 –5 0 Output Power of Each Tone Pout (each) (dBm) 6 4 f1 = 2 400 MHz f2 = 2 401 MHz 0 –20 f = 2.4 GHz 4.5 2.7 V 30 6.5 5.5 3.3 V 2.4 V NOISE FIGURE vs. SUPPLY VOLTAGE Noise Figure NF (dB) Pout (des) –20 Input Power Pin (dBm) 4 Supply Voltage VCC (V) Remark The graphs indicate nominal characteristics. 22 Pout (undes) 0 Input Power Pin (dBm) 3rd Order Intermodulation Distortion IM3 (dBc) Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) µPC8179TK Data Sheet PU10059EJ02V0DS 5 µPC8179TK f = 3.0 GHz MATCHING S22-FREQUENCY S11-FREQUENCY 1: 77.02 Ω –65.883 Ω 1 GHz 2: 37.43 Ω –53.027 Ω 1.9 GHz 3: 28.781 Ω –39.209 Ω 2.4 GHz 4: 25.676 Ω –27.78 Ω 1.9097 pF MARKER 4 3 GHz 1: 96.859 Ω –359.69 Ω 1 GHz 2: 54.43 Ω –218.02 Ω 1.9 GHz 3: 41.422 Ω –181.84 Ω 2.4 GHz 4: 27.039 Ω –151.69 Ω 349.74 fF 4 VCC = 3.0 V 1 ICC = 4.23 mA 3 2 Pin = –30 dBm TA = +25˚C (at L loaded) START 100.000 000 MHz STOP 3 100.000 000 MHz START 100.000 000 MHz MARKER 4 3 GHz 1 2 VCC = 3.0 V 4 3 ICC = 4.23 mA Pin = –30 dBm TA = +25˚C (at L loaded) STOP 3 100.000 000 MHz Remark The graphs indicate nominal characteristics. Data Sheet PU10059EJ02V0DS 23 µPC8179TK PACKAGE DIMENSIONS 6-PIN LEAD-LESS MINIMOLD (1511) (UNIT: mm) (Bottom View) 0.16±0.05 1.5±0.1 0.48±0.05 0.48±0.05 (Top View) 1.1±0.1 0.2±0.1 24 0.11+0.1 –0.05 0.55±0.03 1.3±0.05 Data Sheet PU10059EJ02V0DS 0.9±0.1 µPC8179TK NOTE ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to VCC line. (4) The inductor (L) should be attached between output and VCC pins. The L and series capacitor (C) values should be adjusted for applied frequency to match impedance to next stage. (5) The DC capacitor must be attached to input pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Wave Soldering Soldering Conditions Condition Symbol Peak temperature (package surface temperature) : 260°C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (molten solder temperature) : 260°C or below Time at peak temperature : 10 seconds or less IR260 WS260 Preheating temperature (package surface temperature) : 120°C or below Partial Heating Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (terminal temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below HS350 Caution Do not use different soldering methods together (except for partial heating). Data Sheet PU10059EJ02V0DS 25 µPC8179TK When the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the authority having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license. • The information in this document is current as of April, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 26 Data Sheet PU10059EJ02V0DS µPC8179TK For further information, please contact NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/ E-mail: [email protected] (sales and general) [email protected] (technical) Sales Division TEL: +81-44-435-1573 FAX: +81-44-435-1579 NEC Compound Semiconductor Devices Hong Kong Limited E-mail: [email protected] (sales, technical and general) FAX: +852-3107-7309 TEL: +852-3107-7303 Hong Kong Head Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Taipei Branch Office FAX: +82-2-558-5209 TEL: +82-2-558-2120 Korea Branch Office NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0504