DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8178TB SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8178TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wideband matched IC. This low current amplifier operates on 3.0 V. This IC is manufactured using NEC’s 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. This process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. FEATURES • Low current consumption : ICC = 1.9 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • Excellent isolation : ISL = 39 dB TYP. @ f = 1.0 GHz ISL = 40 dB TYP. @ f = 1.9 GHz ISL = 38 dB TYP. @ f = 2.4 GHz • Power gain : GP = 11.0 dB TYP. @ f = 1.0 GHz GP = 11.5 dB TYP. @ f = 1.9 GHz GP = 11.5 dB TYP. @ f = 2.4 GHz • Gain 1 dB compression output power : PO (1 dB) = −4.0 dBm TYP. @ f = 1.0 GHz PO (1 dB) = −7.0 dBm TYP. @ f = 1.9 GHz PO (1 dB) = −7.5 dBm TYP. @ f = 2.4 GHz • Operating frequency : 0.1 to 2.4 GHz (Output port LC matching) • High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) • Low weight : 7 mg (Standard value) APPLICATION • Buffer amplifiers on 0.1 to 2.4 GHz mobile communications system Caution Electro-static sensitive devices The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P14895EJ2V0DS00 (2nd edition) Date Published November 2000 N CP(K) Printed in Japan The mark shows major revised points. © 2000 µPC8178TB ORDERING INFORMATION Part Number µPC8178TB-E3 Package Marking 6-pin super minimold Supplying Form C3B Embossed tape 8 mm wide. 1, 2, 3 pins face the perforation side of the tape. Qty 3 kpcs/reel. Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPC8178TB) PIN CONNECTIONS 3 2 1 2 C3B (Top View) (Bottom View) 4 4 3 5 5 2 6 6 1 Data Sheet P14895EJ2V0DS00 Pin No. Pin Name 1 INPUT 2 GND 3 GND 4 OUTPUT 5 GND 6 VCC µPC8178TB PRODUCT LINE-UP (TA = +25°C, VCC = Vout = 3.0 V, ZS = ZL = 50 Ω) Parameter 1.0 GHz output port matching frequency 1.66 GHz output port matching frequency 1.9 GHz output port matching frequency 2.4 GHz output port matching frequency ICC (mA) GP (dB) ISL (dB) PO(1dB) (dBm) GP (dB) ISL (dB) PO(1dB) (dBm) GP (dB) ISL (dB) PO(1dB) (dBm) GP (dB) ISL (dB) PO(1dB) (dBm) µPC8178TB 1.9 11 39 −4.0 − − − 11.5 40 −7.0 11.5 38 −7.5 C3B µPC8179TB 4.0 13.5 44 +3.0 − − − 15.5 42 +1.5 15.5 41 +1.0 C3C µPC8128TB 2.8 12.5 39 −4.0 13 39 −4.0 13 37 −4.0 − − − C2P µPC8151TB 4.2 12.5 38 +2.5 15 36 +1.5 15 34 +0.5 − − − C2U µPC8152TB 5.6 23 40 −4.5 19.5 38 −8.5 17.5 35 −8.5 − − − C2V Part No. Marking Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. SYSTEM APPLICATION EXAMPLE Location examples in digital cellular Low Noise Tr. RX I Q DEMOD. ÷N SW PLL PLL I 0° TX φ PA 90° Q These ICs can be added to your system around V parts, when you need more isolation or gain. The application herein, however, shows only examples, therefore the application can depend on your kit evaluation. Data Sheet P14895EJ2V0DS00 3 µPC8178TB PIN EXPLANATION Pin No. Pin Name Applied Voltage (V) Pin Voltage Note (V) 1 INPUT − 0.91 Signal input pin. A internal matching circuit, configured with resisters, enables 50 Ω connection over a wide band. This pin must be coupled to signal source with capacitor for DC cut. 2 3 5 GND 0 − Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be connected together with wide ground pattern to decrease impedance defference. 4 6 OUTPUT VCC voltage as same as VCC through external inductor − 2.4 to 3.3 − Function and Applications Signal output pin. This pin is designed as collector output. Due to the high impedance output, this pin should be externally equipped with LC matching circuit to next stage. For L, a size 1005 chip inductor can be chosen. Power supply pin. This pin should be externally equipped with bypass capacitor to minimize its impedance. Note Pin voltage is measured at VCC = 3.0 V. 4 Data Sheet P14895EJ2V0DS00 Internal Equivalent Circuit 6 4 ↓ 2 3 1 5 µPC8178TB ABSOLUTE MAXIMUM RATINGS Parameter Symbol Conditions Ratings Unit Supply Voltage VCC TA = +25°C, Pin 4, Pin 6 3.6 V Circuit Current ICC TA = +25°C 15 mA Power Dissipation PD Mounted on double sided copper clad 50 × 50 × 1.6 mm epoxy glass PWB (TA = +85°C) 270 mW Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Tstg −55 to +150 °C Input Power Pin +5 dBm TA = +25°C RECOMMENDED OPERATING CONDITIONS Parameter Symbol MIN. TYP. MAX. Unit Remarks Supply Voltage VCC 2.4 3.0 3.3 V The same voltage should be applied to pin 4 and pin 6. Operating Ambient Temperature TA −40 +25 +85 °C ELECTRICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°°C, VCC = Vout = 3.0 V, ZS = ZL = 50 Ω, at LC matched frequency) Parameter Symbol Conditions MIN. TYP. MAX. Unit Circuit Current ICC No signal 1.4 1.9 2.4 mA Power Gain GP f = 1.0 GHz, Pin = −30 dBm f = 1.9 GHz, Pin = −30 dBm f = 2.4 GHz, Pin = −30 dBm 9.0 9.0 9.0 11.0 11.5 11.5 13.0 13.5 13.5 dB Isolation ISL f = 1.0 GHz, Pin = −30 dBm f = 1.9 GHz, Pin = −30 dBm f = 2.4 GHz, Pin = −30 dBm 34 35 33 39 40 38 − − − dB PO(1dB) f = 1.0 GHz f = 1.9 GHz f = 2.4 GHz −8.0 −11.0 −11.5 −4.0 −7.0 −7.5 − − − dBm Noise Figure NF f = 1.0 GHz f = 1.9 GHz f = 2.4 GHz − − − 5.5 5.5 5.5 7.0 7.0 7.0 dB Input Return Loss RLin f = 1.0 GHz, Pin = −30 dBm f = 1.9 GHz, Pin = −30 dBm f = 2.4 GHz, Pin = −30 dBm 4 5 6.5 7 8 9.5 − − − dB Gain 1 dB Compression Output Power Data Sheet P14895EJ2V0DS00 5 µPC8178TB TEST CIRCUITS <1> f = 1.0 GHz VCC C4 C5 Output port matching circuit L1 6 50 Ω C1 C2 4 1 IN C3 50 Ω OUT 2, 3, 5 <2> f = 1.9 GHz VCC C4 C6 C5 Output port matching circuit L1 6 50 Ω C1 C2 4 1 IN C3 50 Ω OUT 2, 3, 5 <3> f = 2.4 GHz VCC C3 C5 C4 Output port matching circuit L1 6 50 Ω IN C1 50 Ω 4 1 OUT L2 2, 3, 5 6 Data Sheet P14895EJ2V0DS00 C2 µPC8178TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD <1> f = 1.0 GHz AMP-4 Top View C2 L1 C3B OUT IN Connector C3 Connector C1 C5 Mounting direction C4 COMPONENT LIST 1.0 GHz Output Port Matching C1, C3, C5 1 000 pF C2 0.75 pF C4 10 pF L1 12 nH Data Sheet P14895EJ2V0DS00 7 µPC8178TB <2> f = 1.9 GHz AMP-4 Top View L1 C3B OUT IN Connector C2 C1 C6 Mounting direction C4 C5 COMPONENT LIST 1.9 GHz Output Port Matching C1, C3, C5, C6 8 1 000 pF C2 0.5 pF C4 10 pF L1 3.9 nH Data Sheet P14895EJ2V0DS00 C3 Connector µPC8178TB <3> f = 2.4 GHz AMP-4 Top View Connector C2 L1 C3B OUT L2 IN Connector C1 C5 C3 Mounting direction C4 COMPONENT LIST 2.4 GHz Output Port Matching C1, C2, C4, C5 1 000 pF C3 10 pF L1 1.8 nH L2 2.7 nH NOTES (∗1) 42 × 35 × 0.4 mm double sided copper clad polyimide board (∗2) Solder plated on pattern (∗3) Back side: GND pattern (∗4) : Through holes Data Sheet P14895EJ2V0DS00 9 µPC8178TB TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°°C) CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE CIRCUIT CURRENT vs. SUPPLY VOLTAGE 2.5 2.5 2 Circuit Current ICC (mA) Circuit Current ICC (mA) No signal 1.5 1 0.5 0 0 1 2 3 4 2 1.5 1 0.5 0 –60 –40 –20 Supply Voltage VCC (V) 10 No signal VCC = 3.0 V 0 +20 +40 +60 +80 +100 Operating Ambient Temperature TA (°C) Data Sheet P14895EJ2V0DS00 µPC8178TB 1.0 GHz OUTPUT PORT MATCHING S-PARAMETERS (monitored at connector on board) TA = +25°°C , VCC = Vout = 3.0 V 1: 62.488 Ω S11 –58.969 Ω 2.699 pF 1 000.000 000 MHz MARKER 1 1 GHz 1 START 100.000 000 MHz STOP 3 100.000 000 MHz 1: 61.654 Ω S22 –11.893 Ω 13.383 pF 1 000.000 000 MHz 1 START 00.000 000 MHz STOP 3 100.000 000 MHz Data Sheet P14895EJ2V0DS00 11 µPC8178TB 1.0 GHz OUTPUT PORT MATCHING POWER GAIN vs. FREQUENCY POWER GAIN vs. FREQUENCY +20 +20 VCC = 3.3 V VCC = 3.0 V 0 VCC = 2.4 V –10 –20 –30 –40 0.1 TA = +25°C 0 TA = +85°C –10 –20 –30 0.3 1.0 –40 0.1 3.0 0.3 Frequency f (GHz) –20 –20 VCC = 2.4 V –40 VCC = 3.0 V –50 VCC = 3.3 V –60 –30 TA = –40°C –40 TA = +25°C –50 TA = +85°C –60 0.3 1.0 –70 0.1 3.0 0.3 1.0 3.0 Frequency f (GHz) INPUT RETURN LOSS vs. FREQUENCY INPUT RETURN LOSS vs. FREQUENCY 0 0 VCC = 3.3 V –5 –10 VCC = 3.0 V VCC = 2.4 V –15 –20 –25 0.3 1.0 3.0 Input Return Loss RLin (dB) Input Return Loss RLin (dB) VCC = 3.0 V Frequency f (GHz) –30 0.1 TA = –40°C –5 –10 TA = +25°C TA = +85°C –15 –20 –25 –30 0.1 Frequency f (GHz) 12 3.0 ISOLATION vs. FREQUENCY –10 Isolation ISL (dB) Isolation ISL (dB) ISOLATION vs. FREQUENCY –30 1.0 Frequency f (GHz) –10 –70 0.1 TA = –40°C +10 Power Gain GP (dB) Power Gain GP (dB) +10 VCC = 3.0 V 0.3 1.0 Frequency f (GHz) Data Sheet P14895EJ2V0DS00 3.0 µPC8178TB 1.0 GHz OUTPUT PORT MATCHING OUTPUT RETURN LOSS vs. FREQUENCY OUTPUT RETURN LOSS vs. FREQUENCY 0 –5 –10 VCC = 2.4 V –15 VCC = 3.0 V –20 VCC = 3.3 V –25 0.1 Output Power Pout (dBm) Output Return Loss RLout (dB) +5 0.3 1.0 –5 –10 TA = –40°C –15 TA = +25°C –20 1.0 3.0 OUTPUT POWER vs. INPUT POWER OUTPUT POWER vs. INPUT POWER +5 +5 0 VCC = 3.3 V –10 VCC = 3.0 V –15 –20 VCC = 2.4 V VCC = 3.0 V TA = –40°C 0 –5 –10 TA = +25°C –15 –20 TA = +85°C –25 –30 –40 –35 –30 –25 –20 –15 –10 –5 0 –30 –40 –35 –30 –25 –20 –15 –10 –5 Input Power Pin (dBm) +5 Input Power Pin (dBm) +20 VCC = 3.0 V +10 f1 = 1 000 MHz 0 f2 = 1 001 MHz –10 –20 PO(each) –40 IM3 –60 –70 –80 –40 –35 –30 –25 –20 –15 –10 –5 Input Power of Each Tone Pin(each) (dBm) 0 0 +5 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE 3rd Order Intermodulation Distortion IM3 (dBc) OUTPUT POWER OF EACH TONE, IM3 vs. INPUT POWER OF EACH TONE –50 0.3 Frequency f (GHz) +10 –30 TA = +85°C Frequency f (GHz) –25 Output Power of Each Tone PO(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) 0 +10 –5 VCC = 3.0 V –25 0.1 3.0 Output Power Pout (dBm) Output Return Loss RLout (dB) +5 –60 f1 = 1 000 MHz f2 = 1 001 MHz –50 VCC = 3.3 V –40 VCC = 3.0 V –30 VCC = 2.4 V –20 –10 0 –25 –20 –15 –10 –5 0 Output Power of Each Tone PO(each) (dBm) Data Sheet P14895EJ2V0DS00 13 µPC8178TB 1.0 GHz OUTPUT PORT MATCHING NOISE FIGURE vs. SUPPLY VOLTAGE 7 Noise Figure NF (dB) 6.5 TA = +85°C 6 TA = +25°C 5.5 5 TA = –40°C 4.5 4 2 2.5 3 3.5 Supply Voltage VCC (V) 14 Data Sheet P14895EJ2V0DS00 µPC8178TB 1.9 GHz OUTPUT PORT MATCHING S-PARAMETERS (monitored at connector on board) TA = +25°°C , VCC = Vout = 3.0 V 1: 38.854 Ω S11 –45.852 Ω 1.8269 pF 1 900.000 000 MHz MARKER 1 1.9 GHz 1 START 100.000 000 MHz STOP 3 100.000 000 MHz 1: 37.332 Ω S22 0.8965 Ω 75.095 pH 1 900.000 000 MHz 1 START 100.000 000 MHz STOP 3 100.000 000 MHz Data Sheet P14895EJ2V0DS00 15 µPC8178TB 1.9 GHz OUTPUT PORT MATCHING POWER GAIN vs. FREQUENCY POWER GAIN vs. FREQUENCY +20 +20 VCC = 3.3 V VCC = 3.0 V 0 VCC = 2.4 V –10 –20 –30 –40 0.1 TA = +25°C 0 TA = +85°C –10 –20 –30 0.3 1.0 –40 0.1 3.0 0.3 Frequency f (GHz) –20 –20 –30 VCC = 3.3 V –40 VCC = 3.0 V –50 VCC = 2.4 V –60 VCC = 3.0 V –30 TA = –40°C –40 TA = +25°C –50 TA = +85°C –60 0.3 1.0 –70 0.1 3.0 0.3 1.0 3.0 Frequency f (GHz) Frequency f (GHz) INPUT RETURN LOSS vs. FREQUENCY INPUT RETURN LOSS vs. FREQUENCY 0 0 VCC = 2.4 V –5 Input Return Loss RLin (dB) Input Return Loss RLin (dB) 3.0 ISOLATION vs. FREQUENCY –10 Isolation ISL (dB) Isolation ISL (dB) ISOLATION vs. FREQUENCY VCC = 3.0 V –10 VCC = 3.3 V –15 –20 –25 –30 0.1 0.3 1.0 3.0 VCC = 3.0 V TA = –40°C –5 TA = +25°C –10 TA = +85°C –15 –20 –25 –30 0.1 Frequency f (GHz) 16 1.0 Frequency f (GHz) –10 –70 0.1 TA = –40°C +10 Power Gain GP (dB) Power Gain GP (dB) +10 VCC = 3.0 V 0.3 1.0 Frequency f (GHz) Data Sheet P14895EJ2V0DS00 3.0 µPC8178TB 1.9 GHz OUTPUT PORT MATCHING OUTPUT RETURN LOSS vs. FREQUENCY OUTPUT RETURN LOSS vs. FREQUENCY +5 Output Return Loss RLin (dB) Output Return Loss RLout (dB) +5 0 –5 VCC = 2.4 V –10 VCC = 3.0 V –15 VCC = 3.3 V –20 –25 0.1 0.3 1.0 VCC = 3.0 V 0 –5 TA = +85°C –10 TA = +25°C –15 TA = –40°C –20 –25 0.1 3.0 0.3 Frequency f (GHz) +5 +5 VCC = 3.3 V –5 –10 VCC = 3.0 V –15 –20 VCC = 2.4 V –30 –40 –35 –30 –25 –20 –15 –10 –5 0 OUTPUT POWER OF EACH TONE, IM3 vs. INPUT POWER OF EACHTONE –5 –10 TA = +25°C –15 –20 TA = +85°C +20 f1 = 1 900 MHz +10 f2 = 1 901 MHz 0 VCC = 3.0 V –10 –20 PO(each) IM3 –50 –60 –70 –80 –40 –35 –30 –25 –20 –15 –10 –5 Input Power of Each Tone Pin(each) (dBm) 0 0 +5 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE 3rd Order Intermodulation Distortion IM3 (dBc) Output Power of Each Tone PO(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) TA = –40°C 0 –30 –40 –35 –30 –25 –20 –15 –10 –5 Input Power Pin (dBm) +5 Input Power Pin (dBm) –40 VCC = 3.0 V –25 –25 –30 3.0 OUTPUT POWER vs. INPUT POWER +10 Output Power Pout (dBm) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER +10 0 1.0 Frequency f (GHz) –60 –50 f1 = 1 900 MHz f2 = 1 901 MHz VCC = 3.3 V –40 VCC = 3.0 V –30 –20 VCC = 2.4 V –10 0 –25 –20 –15 –10 –5 0 Output Power of Each Tone PO(each) (dBm) Data Sheet P14895EJ2V0DS00 17 µPC8178TB 1.9 GHz OUTPUT PORT MATCHING NOISE FIGURE vs. SUPPLY VOLTAGE 6.5 Noise Figure NF (dB) TA = +85°C 6 5.5 TA = +25°C 5 4.5 4 TA = –40°C 2 2.5 3 3.5 Supply Voltage VCC (V) 18 Data Sheet P14895EJ2V0DS00 µPC8178TB 2.4 GHz OUTPUT PORT MATCHING S-PARAMETERS (monitored at connector on board) TA = +25°°C , VCC = Vout = 3.0 V 1: 31.873 Ω S11 –33.441 Ω 1.983 pF 2 400.000 000 MHz MARKER 1 2.4 GHz 1 START 100.000 000 MHz STOP 3 100.000 000 MHz 1: 41.125 Ω S22 20.08 Ω 1.3316 nH 2 400.000 000 MHz 1 START 100.000 000 MHz STOP 3 100.000 000 MHz Data Sheet P14895EJ2V0DS00 19 µPC8178TB 2.4 GHz OUTPUT PORT MATCHING POWER GAIN vs. FREQUENCY POWER GAIN vs. FREQUENCY +20 +20 VCC = 3.3 V VCC = 3.0 V 0 –10 –20 VCC = 2.4 V –30 0.3 1.0 –10 –20 TA = +85°C –40 0.1 3.0 0.3 ISOLATION vs. FREQUENCY ISOLATION vs. FREQUENCY –10 –10 –20 –20 –30 VCC = 3.3 V –40 VCC = 3.0 V –50 VCC = 2.4 V 0.3 VCC = 3.0 V –30 TA = –40°C –40 –60 1.0 TA = +25°C –50 TA = +85°C –70 0.1 3.0 0.3 1.0 3.0 Frequency f (GHz) Frequency f (GHz) INPUT RETURN LOSS vs. FREQUENCY INPUT RETURN LOSS vs. FREQUENCY 0 0 TA = –40°C Input Return Loss RLin (dB) VCC = 2.4 V Input Return Loss RLin (dB) 3.0 Frequency f (GHz) –70 0.1 –5 VCC = 3.0 V –10 VCC = 3.3 V –15 –20 –25 –30 0.1 0.3 1.0 3.0 VCC = 3.0 V –5 TA = +25°C –10 TA = +85°C –15 –20 –25 –30 0.1 Frequency f (GHz) 20 1.0 Frequency f (GHz) Isolation ISL (dB) Isolation ISL (dB) TA = +25°C 0 –30 –40 0.1 –60 TA = –40°C +10 Power Gain GP (dB) Power Gain GP (dB) +10 VCC = 3.0 V 0.3 1.0 Frequency f (GHz) Data Sheet P14895EJ2V0DS00 3.0 µPC8178TB 2.4 GHz OUTPUT PORT MATCHING OUTPUT RETURN LOSS vs. FREQUENCY OUTPUT RETURN LOSS vs. FREQUENCY 0 –5 –10 VCC = 2.4 V VCC = 3.0 V –15 VCC = 3.3 V –20 –25 0.1 Output Power Pout (dBm) Output Return Loss RLout (dB) +5 0.3 1.0 –5 –10 –15 1.0 3.0 OUTPUT POWER vs. INPUT POWER OUTPUT POWER vs. INPUT POWER +5 VCC = 3.3 V 0 –5 VCC = 3.0 V –15 VCC = 2.4 V VCC = 3.0 V TA = +85°C 0 –5 TA = +25°C –10 –15 –20 TA = –40°C –25 –30 –40 –35 –30 –25 –20 –15 –10 –5 0 –30 –40 –35 –30 –25 –20 –15 –10 –5 Input Power Pin (dBm) +5 Input Power Pin (dBm) +10 f1 = 2 400 MHz 0 f2 = 2 401 MHz –10 –20 PO(each) –40 IM3 –60 –70 –80 –40 –35 –30 –25 –20 –15 –10 –5 0 0 +5 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE 3rd Order Intermodulation Distortion IM3 (dBc) OUTPUT POWER OF EACH TONE, IM3 vs. INPUT POWER OF EACH TONE –50 0.3 Frequency f (GHz) +5 –30 TA = +85°C –20 +10 –20 TA = –40°C TA = +25°C Frequency f (GHz) –25 Output Power of Each Tone PO(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) 0 +10 –10 VCC = 3.0 V –25 0.1 3.0 Output Power Pout (dBm) Output Return Loss RLout (dB) +5 –60 –50 f1 = 2 400 MHz f2 = 2 401 MHz VCC = 3.3 V –40 VCC = 3.0 V –30 VCC = 2.4 V –20 –10 0 –25 Input Power of Each Tone Pin(each) (dBm) Data Sheet P14895EJ2V0DS00 –20 –15 –10 –5 0 Output Powr of Each Tone PO(each) (dBm) 21 µPC8178TB 2.4 GHz OUTPUT PORT MATCHING NOISE FIGURE vs. SUPPLY VOLTAGE 6.5 Noise Figure NF (dB) TA = +85°C 6 TA = +25°C 5.5 5 TA = –40°C 4.5 4 2 2.5 3 3.5 Supply Voltage VCC (V) Remark The graphs indicate nominal characteristics. 22 Data Sheet P14895EJ2V0DS00 µPC8178TB S-PARAMETERS (VCC = Vout = 3.0 V) S11-FREQUENCY 0.1 G 3.0 G 1.0 G 2.0 G S22-FREQUENCY 0.1 G 1.0 G 2.0 G 3.0 G Data Sheet P14895EJ2V0DS00 23 µPC8178TB TYPICAL S-PARAMETER VALUES (TA = +25°°C) VCC = Vout = 3.0 V, ICC = 1.9 mA FREQUENCY MHz 24 S11 MAG. S21 ANG. MAG. S12 ANG. S12 MAG. ANG. MAG. ANG. 100.0000 0.821 −16.9 1.060 180.0 0.002 83.1 0.996 −1.9 200.0000 0.692 −26.0 1.042 −177.2 0.004 57.2 0.994 −3.9 300.0000 0.598 −30.2 1.085 −174.3 0.004 56.5 0.985 −5.4 400.0000 0.540 −31.6 1.164 −172.7 0.004 40.1 0.973 −6.9 500.0000 0.501 −33.1 1.259 −172.3 0.006 36.8 0.958 −8.2 600.0000 0.484 −34.0 1.365 −173.8 0.004 27.3 0.952 −9.7 700.0000 0.477 −35.5 1.516 −176.1 0.005 41.3 0.948 −10.8 800.0000 0.474 −37.4 1.601 −179.4 0.006 47.2 0.946 −11.9 900.0000 0.469 −40.4 1.700 177.2 0.006 41.9 0.942 −13.0 1000.0000 0.466 −42.8 1.791 172.1 0.006 39.8 0.927 −14.4 1100.0000 0.453 −45.2 1.867 167.6 0.006 30.9 0.916 −15.5 1200.0000 0.447 −48.2 1.929 163.2 0.005 27.1 0.915 −16.8 1300.0000 0.442 −51.3 2.030 157.3 0.005 37.0 0.913 −17.8 1400.0000 0.439 −55.1 2.067 152.2 0.006 40.6 0.907 −19.0 1500.0000 0.439 −59.0 2.109 146.4 0.004 52.5 0.902 −19.8 1600.0000 0.439 −62.6 2.118 142.5 0.006 32.5 0.888 −21.1 1700.0000 0.433 −66.0 2.089 137.2 0.005 44.7 0.880 −22.0 1800.0000 0.427 −69.8 2.082 132.7 0.006 52.4 0.882 −23.0 1900.0000 0.416 −73.1 2.034 127.9 0.005 48.6 0.884 −24.1 2000.0000 0.405 −77.4 2.025 124.0 0.006 42.4 0.880 −25.0 2100.0000 0.399 −82.2 1.967 119.6 0.005 57.6 0.872 −26.1 2200.0000 0.395 −86.5 1.992 116.7 0.004 62.3 0.864 −27.2 2300.0000 0.398 −89.4 1.999 113.6 0.005 70.7 0.863 −28.1 2400.0000 0.396 −92.5 2.019 110.7 0.003 105.5 0.862 −29.2 2500.0000 0.394 −95.2 1.963 107.2 0.004 88.3 0.860 −30.4 2600.0000 0.382 −97.5 2.013 103.6 0.005 110.9 0.857 −31.2 2700.0000 0.368 −101.1 1.948 101.4 0.005 107.6 0.849 −32.1 2800.0000 0.360 −104.8 1.934 96.2 0.007 124.4 0.846 −33.2 2900.0000 0.359 −108.7 1.986 94.5 0.005 100.5 0.842 −34.7 3000.0000 0.357 −111.2 1.951 89.5 0.008 128.9 0.844 −35.4 3100.0000 0.355 −113.7 2.049 85.8 0.009 113.3 0.846 −36.7 Data Sheet P14895EJ2V0DS00 µPC8178TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 0.2+0.1 –0.05 0.65 0.65 1.3 Data Sheet P14895EJ2V0DS00 0.15 +0.1 –0.05 0 to 0.1 0.7 0.1 MIN. 0.9±0.1 2.0±0.2 1.25±0.1 25 µPC8178TB NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to VCC line. (4) The inductor (L) should be attached between output and VCC pins. The L and series capacitor (C) values should be adjusted for applied frequency to match impedance to next stage. (5) The DC capacitor must be attached to input pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Soldering Conditions Recommended Condition Symbol Infrared Reflow Package peak temperature: 235°C or below Time: 30 seconds or less (at 210°C) Note Count: 3, Exposure limit: None IR35-00-3 VPS Package peak temperature: 215°C or below Time: 40 seconds or less (at 200°C) Note Count: 3, Exposure limit: None VP15-00-3 Wave Soldering Soldering bath temperature: 260°C or below Time: 10 seconds or less Note Count: 1, Exposure limit: None WS60-00-1 Partial Heating Pin temperature: 300°C Time: 3 seconds or less (per side of device) Note Exposure limit: None – Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). 26 Data Sheet P14895EJ2V0DS00 µPC8178TB [MEMO] Data Sheet P14895EJ2V0DS00 27 µPC8178TB ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES • The information in this document is current as of November, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4