DATA SHEET MOS INTEGRATED CIRCUIT µPD16814 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT DESCRIPTION The µPD16814GS is a monolithic dual H bridge driver circuit employing a power MOS FET for its driver stage. By complementing the P channel and N channel of the output stage, the circuit current is substantially improved as compared with that of the conventional charge pump driver. Because the dual H bridge driver circuits at the output stage are independent of each other, this IC is ideal as the driver circuit for a 1- to 2-phase excitation bipolar driving stepping motor for the head actuator of an FDD. FEATURES • Low ON resistance (sum of ON resistance of top and bottom FETs) RON1 = 2.0 Ω TYP. • Low current consumption: IDD = 100 µA MAX. • Four input modes independently controlling dual H bridge drivers • Stop and Brake modes selectable • Surface-mount mini-mold package: 16-pin plastic SOP (300 mil) PIN CONFIGURATION (Top View) 1 16 NC 1A 2 15 1B PGND1 3 14 PGND2 2A 4 13 2B VDD 5 12 VM2 IN1 6 11 SEL IN3 7 10 IN4 IN2 8 9 DGND µPD16814GS VM1 ORDERING INFORMATION Part Number µPD16814GS Package 16-pin plastic SOP (300 mil) The information in this document is subject to change without notice. Document No. S10112EJ4V0DS00 (4th edition) Date Published August 1997 N Printed in Japan © 1997 µPD16814 BLOCK DIAGRAM VDD 5 VM VM1 1 IN1 6 + 1A 2 CONTROL CIRCUIT 1 “H” BRIDGE 1 IN2 8 15 1B PGND1 3 SEL 11 12 IN3 7 CONTROL CIRCUIT 2 IN4 10 “H” BRIDGE 2 2A 4 13 DGND 9 VM2 14 2B PGND2 FUNCTION TABLE • In Stop mode (SEL = High) Excitation Direction IN1 IN2 IN3 IN4 H1 H2 —— L L L L S S H2R L L L H S R H2F L L H L S F —— L L H H S S H1R L H L L R S <3> L H L H R R <2> L H H L R F H1R L H H H R S H1F H L L L F S <4> H L L H F R <1> H L H L F F H1F H L H H F S —— H H L L S S H2R H H L H S R H2F H H H L S F —— H H H H S S H1 F <4> <1> H2 R H2 F <3> <2> H1 R 2 µPD16814 • In Brake mode (SEL = Low) Excitation Direction IN1 IN2 IN3 IN4 H1 H2 —— L L L L B B H2R L L L H B R H2F L L H L B F —— L L H H B B H1R L H L L R B <3> L H L H R R <2> L H H L R F H1R L H H H R B H1F H L L L F B <4> H L L H F R <1> H L H L F F H1F H L H H F B —— H H L L B B H2R H H L H B R H2F H H H L B F —— H H H H B B F: Forward R: Reverse OFF B: Brake FORWARD REVERSE STOP BRAKE VM VM VM VM ON OFF A S: Stop OFF B ON A ON ON OFF B OFF A OFF OFF OFF B OFF A OFF ON B ON 3 µPD16814 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Parameter Symbol Ratings Unit Supply voltage (motor block) VM –0.5 to +7 V Supply voltage (control block) VDD –0.5 to +7 V Power dissipation Pd1 0.862Note 1 W Pd2 1.087Note 2 ID (pulse) ±1.0Note 2,3 A Input voltage VIN –0.5 to VDD + 0.5 V Operating temperature TA 0 to 60 °C Junction temperature Tj MAX. 150 °C Storage temperature Tstg –55 to +125 °C Instantaneous H bridge driver current Notes 1. IC alone. 2. When mounted on board (100 × 100 × 1 mm, glass epoxy) 3. t ≤ 5 ms, Duty ≤ 40% Pd vs. TA Characteristics 1.2 When mounted on board 1.0 Average power dissipation Pd (W) IC alone 0.8 0.6 0.4 0.2 0 20 40 60 Ambient temperature TA (°C) 4 80 µPD16814 RECOMMENDED OPERATING CONDITIONS (TA = 25 °C) Parameter Symbol MIN. TYP. MAX. Unit Supply voltage (motor block) VM 4.0 5.0 6.0 V Supply voltage (control block) VDD 4.0 5.0 6.0 V H bridge drive currentNote IDR ±415 mA Operating temperature TA 60 °C 0 Note When mounted on board (100 × 100 × 1 mm, glass epoxy) ELECTRICAL CHARACTERISTICS (Within recommended operating conditions unless otherwise specified) Parameter Symbol Condition MIN. TYP. Unit 1.0 µA 0.1 mA VM pin current with output transistor OFF IM VDD pin current IDD Control pin high-level input current IIH VIN = VDD 1.0 µA Control pin low-level input current IIL VIN = 0 V –1.0 µA Control pin high-level input voltage VIH 3.0 VDD + 0.3 V Control pin low-level input voltage VIL –0.3 0.8 V 4.0 Ω ±5 % H bridge circuit ON resistanceNote 1 RON relative accuracy H bridge output circuit propagation delay time H bridge output circuit propagation delay time H bridge output circuit rise time H bridge output circuit fall time VM = 6.0 V, VDD = 6.0 V MAX. RON1 VM = 5 V, VDD = 5 V 2.0 ∆RON Excitation direction <2>, ∆RON Excitation direction <1>, <3> <4>Note 2 VNote 3 tPHL VM = 5 V, VDD = 5 tPLH TA = 25 °C, RM = 20 Ω VNote 3 tTHL VM = 5 V, VDD = 5 tTLH TA = 25 °C, RM = 20 Ω ±10 1.8 2.5 µs 0.2 0.65 µs 0.2 0.4 µs 0.1 0.2 µs Notes 1. Sum of ON resistance of top and bottom transistors 2. For the excitation direction, refer to FUNCTION TABLE. 3. IN1-IN4 tPHL tPLH IM tTHL tTLH 5 µPD16814 TYPICAL CHARACTERISTICS RON vs. Tj Characteristics RON vs. VDD (= VM) Characteristics 4 4 H bridge ON resistance RON (Ω) H bridge ON resistance RON (Ω) RON = 20 Ω 3 2 3 2 1 1 0 0 4.0 5.0 6.0 Supply voltage VDD (= VM) (V) 25 50 75 100 125 150 Operating junction temperature Tj (˚C) tPHL vs. TA Characteristics tPLH vs. TA Characteristics 0.8 H bridge output curcuit propagation delay time tPLH (µs) H bridge output curcuit propagation delay time tPHL (µs) 4 3 2 1 0 25 50 75 100 125 Operating temperature TA (˚C) 6 150 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 25 50 75 100 125 Operating temperature TA (˚C) 150 µPD16814 STEPPING MOTOR EXCITATION TIMING CHART Inner circumference seek IN1 IN2 IN3 IN4 Excitation H 1F direction <1> H2F <2> H1R <3> H2R <4> H1F <1> H2F <2> H 1R H2R <3> H1R <2> H2F <1> H1F <4> H2R <3> H 1R Outer circumference seek IN1 IN2 IN3 IN4 Excitation H 1F direction <4> • Input signal wave when SEL = LOW (Brake mode) To set the H bridge in the Brake mode (refer to FUNCTION TABLE), use input signals that set the Brake mode from IN2 (IN4). Example 1 From Forward to Brake IN1/IN3 IN1/IN3 IN2/IN4 IN2/IN4 F B F Correct B Incorrect Example 2 From Reverse to Brake IN1/IN3 IN1/IN3 IN2/IN4 IN2/IN4 R B Correct R B Incorrect Remark This is because noise may be output due to the configuration of the internal circuit. 7 µPD16814 NOTES ON PWM DRIVING CONTROL Keep in mind the following points when executing PWM. • Be sure to input the signals to control PWM driving from IN2 and IN4. • Because the logic of the PWM driving control inputs (IN2 and IN4) to create the Brake status is inverted depending on whether the Forward or Reverse mode is used, care must be exercised when PWM driving is controlled at a duty factor other than 50%. Example 1 PWM driving in Forward mode IN1/IN3 IN1/IN3 IN2/IN4 IN2/IN4 F B F B F B F B F B F F B F B F B F B F B F Correct Incorrect Example 2 PWM driving in Reverse mode IN1/IN3 IN1/IN3 IN2/IN4 IN2/IN4 R B R B R B R B R B R Correct R B R B R B R B R B R Incorrect Remark This is because noise may be output due to the configuration of the internal circuit. 8 µPD16814 PACKAGE DIMENSION 16 PIN PLASTIC SOP (300 mil) 16 9 P detail of lead end 1 8 A H J E K F G I C N D M B L M NOTE Each lead centerline is located within 0.12 mm (0.005 inch) of its true position (T.P.) at maximum material condition. ITEM MILLIMETERS INCHES A 10.46 MAX. 0.412 MAX. B 0.78 MAX. 0.031 MAX. C 1.27 (T.P.) 0.050 (T.P.) D 0.40 +0.10 –0.05 0.016 +0.004 –0.003 E 0.1±0.1 0.004±0.004 F 1.8 MAX. 0.071 MAX. G 1.55 0.061 H 7.7±0.3 0.303±0.012 I 5.6 0.220 J 1.1 0.043 K 0.20 +0.10 –0.05 0.008 +0.004 –0.002 L 0.6±0.2 0.024 +0.008 –0.009 M 0.12 0.005 N 0.10 0.004 P 3° +7° –3° 3° +7° –3° P16GM-50-300B-4 9 µPD16814 RECOMMENDED SOLDERING CONDITIONS It is recommended to solder this product under the conditions shown below. For soldering methods and conditions other than those listed below, consult NEC. For details of the recommended soldering conditions, refer to Information Document “Semiconductor Device Mounting Technology Manual” (C10535E). Surface Mount Type Soldering Method Soldering Condition Symbol of Recommended Soldering Infrared reflow Package peak temperature: 235 °C, Time: 30 seconds MAX. (210 °C MIN.) Number of times: 2 MAX. <Precautions> (1) Start the second reflow after the device temperature rise due to the first reflow has dropped to room temperature. (2) Do not clean flux with water after the first reflow. IR35-00-2 VPS Package peak temperature: 215 °C, Time: 40 seconds MAX. (200 °C MIN.) Number of times: 2 MAX. <Precautions> (1) Start the second reflow after the device temperature rise due to the first reflow has dropped to room temperature. (2) Do not clean flux with water after the first reflow. VP15-00-2 Wave soldering Soldering bath temperature: 260 °C MAX., Time: 10 seconds MAX., Number of times: 1 Preheating temperature: 120 °C MAX. (package surface temperature) WS60-00-1 Partial heating Pin temperature: 300 °C MAX., Time: 3 seconds MAX. (per side of device) – Caution Do not use two or more soldering methods in combination (except partial heating). 10 µPD16814 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS Note: No connection for CMOS device inputs can be cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS device behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND with a resistor, if it is considered to have a possibility of being an output pin. All handling related to the unused pins must be judged device by device and related specifications governing the devices. 3 STATUS BEFORE INITIALIZATION OF MOS DEVICES Note: Power-on does not necessarily define initial status of MOS device. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the devices with reset function have not yet been initialized. Hence, power-on does not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for devices having reset function. 11 µPD16814 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5 2