DATA SHEET MOS INTEGRATED CIRCUIT µPD16858B/C THREE-PHASE SPINDLE MOTOR DRIVER FOR MONOLITHIC CD-ROM DESCRIPTION The µPD16858B/C is a three-phase spindle motor driver for CD-ROM drives and consists of a CMOS control circuit and a MOS bridge output. This motor driver employs a three-phase full-wave PWM driving method. Because it has an output stage consisting of MOS FETs, the motor driver consumes less power than the existing linear drivers using bipolar transistors. The product is supplied in the form of a small, slim 30-pin shrink SOP. This spindle motor driver is ideal for driving slim-type spindle motors in notebook PCs and so on. FEATURES • Both normal PWM type (16858B) and synchronous rectification PWM type (16858C) are available. • Low ON resistance (sum of ON resistances of upper and lower MOS FETs): RON = 0.8 Ω (TYP) • Low power consumption to three-phase full-wave PWM driving • START/STOP pin is provided. Brake is applied in STOP mode. • Standby pin is provided. Internal circuitry is turned off in standby mode. • Low current consumption: IDD = 3 mA (MAX), IDD (ST) = 1 µA (MAX), torque command current = 30 µA (MAX) • Thermal shut-down circuit and current-limiting circuit • Low-voltage malfunctioning prevention circuit • FG output function • Reverse rotation prevention circuit • Hole bias function • 30-pin shrink SOP (300 mil) ORDERING INFORMATION Part Number Package µPD16858BGS-GJG 30-pin shrink SOP (0.65-mm pitch, 300 mil) µPD16858CGS-GJG 30-pin shrink SOP (0.65-mm pitch, 300 mil) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. S13480EJ3V0DS00 (3rd edition) Date Published August 1999 N CP(K) Printed in Japan © 1999 µPD16858B/C ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, 1 Ω/1 mH load condition: mounted on glass epoxy substrate measuring 100 mm × 100 mm × 1 mm with 15% of copper foil) Parameter Symbol Supply voltage Input voltage Steady-state DC output currentNote 1 Steady-state instantaneous output Output current at reverse currentNote 2 brakeNote 3 Condition Rating Unit VDD –0.5 to +5.7 V VM –0.5 to +5.7 V VIN –0.5 to VDD + 0.5 V ID (DC) DC ±0.5 A/phase ID (pulse) PW ≤ 5 ms, Duty ≤ 30 % ±1.3 A/phase IDR (pulse) PW ≤ 5 ms, Duty ≤ 30 % ±1.5 A/phase Power consumption PT 1.0 W Peak joint temperature TCH (MAX) 150 °C Storage temperature range Tstg –55 to +150 °C Notes 1. Rated current at constant-speed revolution 2. Rated current on starting or locking 3. Rated current at reverse brake RECOMMENDED OPERATING CONDITIONS (TA = 25 °C, 1 Ω/1 mH load condition: mounted on glass epoxy substrate measuring 100 mm × 100 mm × 1 mm with 15% of copper foil) Parameter Supply voltage Symbol MIN. TYP. MAX. Unit VDD 4.5 5.5 V VM 4.5 5.5 V Steady-state DC output currentNote 1 ID (DC) ±0.4 A/phase Steady-state instantaneous output currentNote 2 ID (pulse) ±1.0 A/phase Output current at reverse brakeNote 3 IDR (pulse) ±1.2 A/phase Hole bias current IHB 10 20 mA IND pin output current IFG 0 ±2.5 ±5 mA Operating temperature range TA –20 75 °C Notes 1. Recommended maximum current at constant-speed revolution 2. Recommended maximum current on starting or locking (It is recommended that the current be limited to 1.0 A or less.) 3. Recommended maximum current at reverse brake 2 Data Sheet S13480EJ3V0DS00 µPD16858B/C ELECTRICAL SPECIFICATIONS (Unless otherwise specified, TA = 25 °C, VDD = VM = 5 V) Parameter Symbol Condition MIN. TYP. MAX. Unit [Overall] Current consumption 1 (during operation) IDD STB = VDD 3.0 mA Current consumption (in standby mode) STB = GND 1.0 µA VDD V 0.8 V IDD (ST) [ST/SP, STB, REV] High-level input voltage VIH Low-level input voltage VIL Input pull-down resistor RIND 0.6 VDD 120 kΩ 75 kHz [Control circuit] Triangular wave oscillation frequency fPWM CT = 100 pF [Hole amplifier] In-phase input voltage range VHch Hysteresis voltage VHhis Input bias current IHbias 1.5 VH = 2.5 V 3.5 15 V mV 1.0 µA 0.5 V [Hole bias block] Hole bias voltage VHB IHB = 10 mA IND pin high-level voltage VFG_H IFG = –2.5 mA IND pin low-level voltage VFG_L IFG = +2.5 mA Output ON resistance (upper + lower) RON IDR = 200 mA TA = –20 to +75 °C OFF leakage current ID (OFF) Output turn-on time tONH tOFFH 0.3 [FG output] VDD–1.0 V 0.5 V 1.2 Ω 10 µA RM = 5 Ω 1.0 µs Star wiring 1.0 µs [Output block] Output turn-off time 0.8 [Torque command] Control reference input voltage range ECR 0.3 4.0 V Control input voltage range EC 0.3 4.0 V Input current IIN EC, ECR = 0.5 to 3 V 30 µA Input voltage difference ECR-ECNote DUTY = 100 %, ECR = 2.0 V DEAD ZONE (+) EC_d+ ECR = 2.0 V 0 100 mV DEAD ZONE (–) EC_d– ECR = 2.0 V 0 –100 mV –15 +15 mV 1.1 V [Overcurrent detector] Input offset voltage VIO CL pin voltage VCL Note 100 mV Excluding the dead zone. The overheating protection circuit (T.S.D) operates at TCH > 150 °C. The low-voltage malfunctioning prevention circuit (UVLO) operates at 4 V (TYP). Data Sheet S13480EJ3V0DS00 3 µPD16858B/C PIN FUNCTION Package: 30-pin shrink SOP (300 mil) IND STB VM VM OUT2 RF RF OUT1 VM VM OUT0 RF RF ISEN CL Pin No 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Pin Name 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 EC ECR VDD CT H2+ H2− H1+ H1− H0+ H0− HB GND GND ST/SP REV Pin Function 1 IND Index signal output pin 2 STB Standby operation input pin 3 VM Motor block supply voltage input pin 4 VM Motor block supply voltage input pin 5 OUT2 Motor connection pin 6 RF Three-phase bridge common pin 7 RF Three-phase bridge common pin 8 OUT1 Motor connection pin 9 VM Motor block supply voltage input pin 10 VM Motor block supply voltage input pin 11 OUT0 Motor connection pin 12 RF Three-phase bridge common pin 13 RF Three-phase bridge common pin 14 ISEN Sense resistor connection pin 15 CL Overcurrent detection voltage filter pin 16 REV Reverse operation input pin 17 ST/SP Start/stop input pin 18 GND GND pin 19 GND GND pin 20 HB Hole bias pin 21 H0– Hole signal input pin 22 H0+ Hole signal input pin 23 H1– Hole signal input pin 24 H1+ Hole signal input pin 25 H2– Hole signal input pin 26 H2+ Hole signal input pin 27 CT Oscillation frequency setting capacitor connection pin 28 VDD Control system supply voltage input pin 29 ECR Control reference voltage input pin 30 EC Control voltage input pin Remark Where more than one pin with the same name exists (such as VM, RF, and GND), connect all of them, not just one of them. 4 Data Sheet S13480EJ3V0DS00 µPD16858B/C BLOCK DIAGRAM IND 1 30 EC STB 2 29 ECR VM 3 28 VDD UVLO OSC VM 4 27 CT Q5 T.S.D OUT2 5 + 26 H2+ Q6 RF 6 Phase excitation pulse generator circuit CMP2 RF 7 − + Q3 CMP1 OUT1 8 − 25 H2− 24 H1+ 23 H1− Q4 VM 9 + CMP0 VM 10 − 22 H0+ 21 H0− Q1 20 HB OUT0 11 Q2 RF 12 19 GND RF 13 18 GND ISEN 14 + − CL 15 Reverse revolution detector circuit 17 ST/SP 16 REV 100 mV Remarks 1. The CL pin is used to connect a filter. Leave this pin open when it is not used. 2. Where more than one pin with the same name exists (such as VM, RF, and GND), connect all of them, not just one of them. Data Sheet S13480EJ3V0DS00 5 µPD16858B/C TOTAL LOSS VS AMBIENT TEMPERATURE CHARACTERISTICS PT-TA characteristics 1.4 When mounted on glass epoxy substrate measuring 100 mm × 100 mm × 1.0 mm with 15% of Cu foil 1.2 25 °C 1.0 W Total loss PT (W) 1.0 125 °C/W 0.8 0.6 0.4 0.2 75 °C 0 −20 0 25 50 75 100 125 150 Ambient temperature TA (°C) Caution If the ambient temperature is 25 °C or less, a power of up to 1 W can be applied. If the temperature rises beyond 25 °C, perform derating by referring to the above figure. At 75 °C, which is the maximum level of the recommended operating temperature, a power of up to 0.6 W can be applied to the IC. 6 Data Sheet S13480EJ3V0DS00 µPD16858B/C FUNCTION OPERATION TABLE (1) ST/SP = “H” Input Signal Circuit Operation Mode CMP0 CMP1 CMP2 PWM H H L H Operate H H L L Brake H L L H Operate H L L L Brake H L H H Operate H L H L Brake L L H H Operate L L H L Brake L H H H Operate L H H L Brake L H L H Operate L H L L Brake Source → Sink W→V W→U V→U V→W U→W U→V Brake: Regenerated via parasitic diode of high-side Pch MOS FET (µPD16858B). Regenerated via high-side Pch MOS FET channel (µPD16858C). (2) ST/SP = “L” Input Signal Circuit Operation Mode CMP0 CMP1 CMP2 PWM – – – – Short brake Short brake: High-side MOS FET turns ON and low-side MOS FET turns OFF. (3) Torque command The relation between the difference between the control reference voltage (ECR) and control voltage (EC) (ECR – EC) and torque is as follows: Duty cycle Forward torque 100 % −100 mV MAX (−) 100 mV MAX (+) ECR – EC 100 % Reverse torque Reverse Pin Voltage (REV) L H ECR > EC Forward ReverseNote ECR < EC ReverseNote Stop Note Stops if reverse revolution is detected. During reverse revolution, the counter electromotive current flows through the parasitic diode of the Pch MOS FET at the high side (µPD16858B), or the channel of Pch MOS FET at the high side (µPD16858C). Data Sheet S13480EJ3V0DS00 7 µPD16858B/C (4) Standby mode The power supplied to the internal circuitry of the IC can be turned off by setting the IC in the standby mode. In the standby mode, each pin goes into a high-impedance state (H bridge all OFF). The internal oscillation block also stops and therefore, the circuit current can be decreased. If the motor driver is stopped by using the standby pin while the driver is operating, the motor is stopped by force of inertia. It takes the motor driver about several 10 µs to start when it is set in the normal operation mode. STB Pin Operation Mode H Normal mode L Standby mode Caution Output current The rated output current differs depending on whether the motor revolves at a constant speed (steady state), is started (steady state), or reversed and brake is applied. The rated DC current when the motor revolves at a constant speed is 0.5 A, and the rated instantaneous current when the motor is started is 1.3 A. When brake is applied to stop the motor and when the motor is reversed, the maximum current is 1.5 A. When a brake is applied or the motor is reversed, a current exceeding that when the motor revolves at a constant speed (immediately before a brake is applied) instantaneously flows because of the counter electromotive force due to the motor inductance. Determine the value of overcurrent for the steady state, taking the peak current for reversing or applying a brake to the motor into consideration. 8 Data Sheet S13480EJ3V0DS00 µPD16858B/C TIMING CHARTS (1) Hole signal input H0 H1 H2 (2) CMP signal CMP0 CMP1 CMP2 IND pulse output (pin 1) (3) Output MOS FET driving and comparator selection (blank: switch OFF) Q1 (SW) (SW) Q2 SW SW Q3 (SW) Q4 SW Q5 ON ON ON Q6 ON ON (SW) (SW) SW SW ON (SW) (SW) SW SW ON (SW) (SW) SW SW ON ON ON ON (SW) (SW) SW SW ON (SW) (SW) SW SW ON The high-side MOS FET at the output stage of the µPD16858C performs synchronous switching (switching in parentheses). The high-side MOS FET of the µPD16858B does not perform switching in parentheses but is in the OFF state. Data Sheet S13480EJ3V0DS00 9 µPD16858B/C (4) Motor driving wave OUT0 OUT1 OUT2 10 Data Sheet S13480EJ3V0DS00 IND 1 30 EC controller CPU STB 2 29 ECR controller VM 3 UVLO Motor W phase + 26 H2+ − 25 H2− + 24 H1+ − 23 H1− VM 9 + 22 H0+ 10 − 21 H0− Phase excitation pulse generator circuit Q3 OUT1 8 CMP2 CMP1 CMP0 HW 5 V±10 % HV 47 µ F + HU 200 Ω Q1 Motor U phase 20 HB OUT0 11 Q2 19 GND RF 12 RS RFIL 100 mV/RS 18 GND RF 13 1.8 kΩ 330 pF CL 15 + − 100 mV Reverse revolution detector circuit 17 ST/SP CPU 16 REV CPU µPD16858B/C ISEN 14 RS CFIL 200 Ω Q4 VM RFIL 100 pF OSC T.S.D RF 7 Motor V phase 28 VDD 27 CT VM 4 Q5 OUT2 5 Q6 RF 6 APPLICATION CIRCUIT EXAMPLE 11 Caution It is recommended that a tantalum capacitor of several 10 µF be inserted between VM and GND Data Sheet S13480EJ3V0DS00 to reduce noise during PWM. Determine the value of RS so that the output current does not exceed the rating. controller µPD16858B/C PACKAGE DRAWING 30 PIN PLASTIC SHRINK SOP (300 mil) 30 16 detail of lead end P 1 15 A F H G I J S C D N M B S L K M E NOTES 1. Controlling dimension millimeter. 2. Each lead centerline is located within 0.10 mm (0.004 inch) of its true position (T.P.) at maximum material condition. ITEM MILLIMETERS INCHES A 9.85±0.26 0.388±0.011 B 0.51 MAX. 0.020 MAX. C 0.65 (T.P.) 0.026 (T.P.) D 0.32+0.08 –0.07 0.013 +0.003 –0.004 E 0.125±0.075 0.005±0.003 F 2.0 MAX. 0.079 MAX. G 1.7±0.1 0.067±0.004 H 8.1±0.2 0.319±0.008 I 6.1±0.2 0.240±0.008 J 1.0±0.2 0.039 +0.009 –0.008 K 0.17 +0.08 –0.07 0.007 +0.003 –0.004 L 0.5±0.2 0.020 +0.008 –0.009 M 0.10 0.004 N 0.10 0.004 P 3° +7° –3° 3° +7° –3° P30GS-65-300B-2 12 Data Sheet S13480EJ3V0DS00 µPD16858B/C RECOMMENDED SOLDERING CONDITONS Solder this product under the following recommended conditions. For details of the recommended soldering conditions, refer to information document Semiconductor Device Mounting Technology Manual (C10535E). For soldering methods and conditions other than those recommended, consult NEC. Soldering Method(s) Soldering Conditions Recommended Conditions Symbol Infrared reflow Package peak temperature: 235 °C, Time: 30 sec max. (210 °C min.), Number of times: three times max., Number of days: NoneNote, Flux: Rosin-based flux with little chlorine content (chlorine: 0.2 Wt% max.) is recommended. IR35-00-3 VPS Package peak temperature: 215 °C, Time: 40 sec max. (200 °C min.), Number of times: three times max., Number of days: NoneNote, Flux: Rosin-based flux with little chlorine content (chlorine: 0.2 Wt% max.) is recommended. VP15-00-3 Wave soldering Package peak temperature: 260 °C, Time: 10 sec max., Preheating temperature: 120 °C max., Number of times: once, Flux: Rosin-based flux with little chlorine content (chlorine: 0.2 Wt% max.) is recommended. WS60-00-1 Note Number of days in storage after the dry pack has been opened. The storage conditions are at 25 °C, 65% RH MAX. Caution Do not use two or more soldering methods in combination. Data Sheet S13480EJ3V0DS00 13 µPD16858B/C [MEMO] Data Sheet S13480EJ3V0DS00 15 µPD16858B/C • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. 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