3SK298 Silicon N-Channel Dual Gate MOS FET REJ03G0817-0300 (Previous ADE-208-390A) Rev.3.00 Aug.10.2005 Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK–4) 2 3 1 4 Note: 1. Source 2. Gate1 3. Gate2 4. Drain Marking is “ZP–“ Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. Rev.3.00 Aug 10, 2005 page 1 of 8 3SK298 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±8 ±8 25 100 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol V(BR)DSX Min 12 Typ — Max — Unit V Gate 1 to source breakdown voltage Gate 2 to source breakdown voltage Gate 1 cutoff current Gate 2 cutoff current Drain current V(BR)G1SS V(BR) G2SS IG1SS IG2SS IDS(on) ±8 ±8 — — 0.5 — — — — — — — ±100 ±100 10 V V nA nA mA Gate 1 to source cutoff voltage VG1S(off) 0 — +1.0 V VDS = 10 V, VG2S = 3 V, ID = 100 µA Gate 2 to source cutoff voltage VG2S(off) 0 — +1.0 V VDS = 10 V, VG1S = 3 V, ID = 100 µA Forward transfer admittance |yfs| 16 20 — mS VDS = 6 V, VG2S = 3 V, ID = 10 mA, f = 1 kHz Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Power gain Noise figure Noise figure Ciss Coss Crss PG NF PG NF NF 2.4 0.8 — 22 — 12 — — 2.9 1.0 0.023 25 1.0 15 3.2 2.8 3.4 1.4 0.04 — 1.8 — 4.5 3.5 pF pF pF dB dB dB dB dB VDS = 6 V, VG2S = 3 V, ID = 10 mA, f = 1 MHz Rev.3.00 Aug 10, 2005 page 2 of 8 Test conditions ID = 200 µA , VG1S = –3 V, VG2S = –3 V IG1 = ±10 µA, VG2S = VDS = 0 IG2 = ±10 µA, VG1S = VDS = 0 VG1S = ±6 V, VG2S = VDS = 0 VG2S = ±6 V, VG1S = VDS = 0 VDS = 6 V, VG1S = 0.75 V, VG2S = 3 V VDS = 6 V, VG2S = 3 V, ID = 10 mA, f = 200 MHz VDS = 6 V, VG2S = 3 V, ID = 10 mA, f = 900 MHz VDS = 6 V, VG2S = 3 V, ID = 10 mA, f = 60 MHz 3SK298 Typical Output Characteristics 20 200 (mA) 100 16 1.2 V 12 1.0 V 8 0.8 V Drain current Channel Power Dissipation 150 50 0 50 100 150 0 200 Ta (°C) VDS = 6 V 1.0 V 8 (mA) 16 ID Pulse test 1.5 V 2.5 V 4 0 1 2 3 Gate1 to source voltage 12 4 5 10 VG1S (V) 1.5 V 1.0 V 8 4 VG1S = 0.5 V 1 2 3 Gate2 to source voltage 4 5 VG2S (V) Power Gain vs. Drain Current 30 30 24 (dB) VDS = 6 V f = 1 kHz PG VG2S = 3.0 V 18 2.5 V 2.0 V 12 1.5 V 6 0.5 V 0.8 1.2 Gate1 to source voltage Rev.3.00 Aug 10, 2005 page 3 of 8 24 18 12 VDS = 6 V VG2S = 3 V f = 200 MHz 6 1.0 V 0.4 Pulse test 2.0 V Forward Transfer Admittance vs. Gate1 to Source Voltage 0 VDS = 6 V 2.5 V 0 Power gain (mS) 8 3.0 V Drain current (mA) ID 2.0 V VG2S = 0.5 V |yfs| 6 20 3.0 V 12 4 Drain Current vs. Gate2 to Source Voltage 20 16 2 Drain to source voltage VDS (V) Drain Current vs. Gate1 to Source Voltage Drain current 0.6 V 4 VG1S = 0.4 V Ambient Temperature Forward transfer admittance Pulse test 1.4 V VG2S = 3 V ID Pch (mW) Maximum Channel Power Dissipation Curve 1.6 2.0 VG1S (V) 0 1 2 5 Drain current 10 ID (mA) 20 3SK298 Noise Figure vs. Drain Current Power Gain vs. Drain to Source Voltage 30 2.4 PG (dB) VDS = 6 V VG2S = 3 V f = 200 MHz 1.8 Power gain Noise figure NF (dB) 3.0 1.2 0.6 0 1 2 5 Drain current ID 18 12 PG (dB) NF (dB) 1.6 Power gain Noise figure 0.8 VG2S = 3 V ID = 10 mA f = 200 MHz 0.4 6 8 10 Drain to source voltage VDS (V) 2 4 10 8 VDS (V) 16 12 8 VDS = 6 V VG2S = 3 V f = 900 MHz 4 0 1 2 5 Drain current Noise Figure vs. Drain Current 20 10 ID (mA) Power Gain vs. Drain to Source Voltage 10 20 VDS = 6 V VG2S = 3 V f = 900 MHz 8 PG (dB) NF (dB) 6 20 1.2 6 16 12 Power gain Noise figure 4 Power Gain vs. Drain Current 2.0 4 2 0 1 2 Drain to source voltage (mA) Noise Figure vs. Drain to Source Voltage 0 VG2S = 3 V ID = 10 mA f = 200 MHz 6 0 20 10 24 2 Drain current 5 10 ID Rev.3.00 Aug 10, 2005 page 4 of 8 (mA) 20 8 VG2S = 3 V ID = 10 mA f = 900 MHz 4 0 2 4 6 Drain to source voltage 8 VDS 10 (V) 3SK298 Noise Figure vs. Drain to Source Voltage NF (dB) 5 4 Noise figure 3 2 0 Rev.3.00 Aug 10, 2005 page 5 of 8 VG2S = 3 V ID = 10 mA f = 900 MHz 1 6 8 10 Drain to source voltage VDS (V) 2 4 3SK298 S11 Parameter vs. Frequency .8 1 .6 S21 Parameter vs. Frequency 90° 1.5 Scale: 0.5 / div. 60° 120° 2 .4 3 4 5 .2 30° 150° 10 .2 0 .4 .6 .8 1.0 1.5 2 3 45 10 180° 0° –10 –5 –4 –.2 –3 –.4 –30° –150° –2 –.6 –.8 –1 –60° –120° –1.5 –90° Condition: VDS = 6 V , VG2S = 3 V ID = 10 mA , Zo = 50Ω 50 to 1000 MHz (50 MHz step) Condition: VDS = 6 V , VG2S = 3 V ID = 10 mA , Zo = 50Ω 50 to 1000 MHz (50 MHz step) S12 Parameter vs. Frequency S22 Parameter vs. Frequency 90° Scale: 0.002 / div. .8 60° 120° 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1.0 1.5 2 3 45 10 –10 –5 –4 –.2 –30° –150° –3 –.4 –60° –120° –90° Condition: VDS = 6 V , VG2S = 3 V ID = 10 mA , Zo = 50Ω 50 to 1000 MHz (50 MHz step) Rev.3.00 Aug 10, 2005 page 6 of 8 –2 –.6 –.8 –1 –1.5 Condition: VDS = 6 V , VG2S = 3 V ID = 10 mA , Zo = 50Ω 50 to 1000 MHz (50 MHz step) 3SK298 S Parameter (VDS = 6 V, VG2S = 3 V, ID = 10 mA, ZO = 50 Ω) Freq. (MHz) S11 S21 S12 S22 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 MAG. 0.994 0.993 0.986 0.980 0.973 0.950 0.936 0.924 0.912 0.893 0.874 0.859 0.846 0.829 0.810 0.802 ANG. –5.8 –11.0 –16.8 –22.5 –27.8 –33.0 –38.3 –43.4 –48.0 –52.5 –57.3 –62.0 –66.1 –69.8 –74.2 –78.0 MAG. 2.04 2.02 2.00 1.98 1.94 1.90 1.86 1.83 1.77 1.71 1.67 1.64 1.58 1.50 1.46 1.44 ANG. 173.6 167.4 161.5 155.5 149.6 142.6 137.1 131.6 126.8 121.0 115.5 111.1 106.7 102.1 97.1 92.7 MAG. 0.00116 0.00132 0.00229 0.00313 0.00427 0.00473 0.00536 0.00561 0.00562 0.00640 0.00638 0.00647 0.00667 0.00694 0.00661 0.00618 ANG. 76.9 85.7 78.2 73.5 68.7 63.9 64.3 64.5 60.9 53.5 49.3 49.0 50.2 49.3 46.6 43.7 MAG. 0.993 0.993 0.991 0.990 0.987 0.985 0.982 0.979 0.975 0.971 0.967 0.964 0.960 0.955 0.952 0.948 ANG. –2.2 –4.5 –6.4 –8.5 –10.5 –12.5 –14.4 –16.2 –18.2 –20.2 –22.0 –23.9 –25.8 –27.6 –29.4 –31.2 850 900 950 1000 0.791 0.778 0.756 0.751 –81.6 –84.6 –88.5 –92.2 1.38 1.34 1.30 1.26 88.9 84.2 80.2 75.9 0.00622 0.00615 0.00576 0.00562 44.7 43.6 45.1 40.7 0.944 0.940 0.935 0.932 –33.2 –35.1 –36.8 –38.5 Rev.3.00 Aug 10, 2005 page 7 of 8 3SK298 Package Dimensions JEITA Package Code RENESAS Code SC-82A Package Name PTSP0004ZA-A CMPAK-4(T) / CMPAK-4(T)V D MASS[Typ.] 0.006g A e2 e Q b1 c B B E HE LP Reference Symbol L A A x M L1 S A e2 A2 e l1 b5 S b c A A1 y S b2 A3 b e1 b1 b3 c1 c1 c A-A Section l1 b4 B-B Section Pattern of terminal position areas A A1 A2 A3 b b1 b2 b3 c c1 D E e e2 HE L L1 LP x y b4 b5 e1 l1 Q Dimension in Millimeters Min 0.8 0 0.8 0.25 0.35 0.1 1.8 1.15 1.8 0.3 0.1 0.2 Nom 0.9 0.25 0.32 0.42 0.3 0.4 0.13 0.11 2.0 1.25 0.65 0.6 2.1 Max 1.1 0.1 1.0 0.4 0.5 0.15 2.2 1.35 2.4 0.7 0.5 0.6 0.05 0.05 0.45 0.55 1.5 0.9 0.2 Ordering Information Part Name 3SK298ZP-TL-E Quantity 3000 Shipping Container φ 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Aug 10, 2005 page 8 of 8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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