VEC2819 Ordering number : ENA0536 SANYO Semiconductors DATA SHEET VEC2819 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features DC / DC converter. Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance • Ultrahigh-speed switching. • 1.8V drive. [SBD] • Low switching noise. • Low leakage current and high reliability due to planar structure. • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation VDSS VGSS ±10 V ID --3.5 A IDP PD --20 V PW≤10µs, duty cycle≤1% --14 A Mounted on a ceramic board (1200mm2✕0.8mm) 1unit 1.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +125 °C [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Marking : CT VRRM VRSM 30 V 30 V Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 13107PE TI IM TC-00000472 No. A0536-1/6 VEC2819 Continued from preceding page. Parameter Symbol Average Output Current IO Surge Forward Current Junction Temperature IFSM Tj Storage Temperature Tstg Conditions Ratings Unit 2 50Hz sine wave, 1 cycle A 10 A --55 to +125 °C --55 to +125 °C Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current V(BR)DSS IDSS ID=--1mA, VGS=0V VDS=--20V, VGS=0V Gate-to-Source Leakage Current IGSS VGS(off) VGS=±8V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance yfs RDS(on)1 VDS=--10V, ID=--2A Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 Cutoff Voltage --20 --0.4 3.5 ID=--2A, VGS=--4.5V ID=--1A, VGS=--2.5V Input Capacitance Ciss Output Capacitance Coss ID=--0.3A, VGS=--1.8V VDS=--10V, f=1MHz VDS=--10V, f=1MHz Reverse Transfer Capacitance Crss Turn-ON Delay Time Rise Time V --1 µA ±10 µA --1.4 5.8 V S 55 72 mΩ 77 108 mΩ 112 168 mΩ 680 pF 115 pF VDS=--10V, f=1MHz 80 pF td(on) See specified Test Circuit. 12 ns tr td(off) See specified Test Circuit. 57 ns See specified Test Circuit. 68 ns tf Qg See specified Test Circuit. 58 ns VDS=--10V, VGS=--4.5V, ID=--3.5A 8.7 nC Gate-to-Source Charge Qgs nC Qgd VDS=--10V, VGS=--4.5V, ID=--3.5A VDS=--10V, VGS=--4.5V, ID=--3.5A 1.5 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=--3.5A, VGS=0V VR VF 1 IR=200µA IF=1A VF 2 IF=2A VR=15V Turn-OFF Delay Time Fall Time Total Gate Charge 1.8 nC --0.83 --1.2 V 0.4 0.45 V 0.45 0.5 V 30 µA [SBD] Reverse Voltage Forward Voltage Reverse Current 30 Interterminal Capacitance IR C VR=10V, f=1MHz Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. Package Dimensions 0.25 8 0.3 7 7 6 2 3 ns 5 1 : Anode 2 : No Contact 3 : Drain 4 : Drain 5 : Source 6 : Gate 7 : Cathode 8 : Cathode 0.15 6 5 4 0.65 1 2 3 4 Top view 0.75 2.9 0.07 1 pF 20 2.3 0.25 2.8 75 Electrical Connection unit : mm (typ) 7012-005 8 V 1 : Anode 2 : No Contact 3 : Drain 4 : Drain 5 : Source 6 : Gate 7 : Cathode 8 : Cathode SANYO : VEC8 No. A0536-2/6 VEC2819 Switching Time Test Circuit trr Test Circuit [MOSFET] [SBD] Duty≤10% VDD= --10V 100mA ID= --2A RL=5Ω 50Ω VOUT D 100Ω 10Ω 100mA VIN 10µs PW=10µs D.C.≤1% 10mA VIN 0V --4.5V --5V G trr VEC2819 50Ω ID -- VDS --6 --2.0 --1.5 VGS= --1.5V --4 --3 --2 Ta = --1.0 --5 0 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 IT11954 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS [MOSFET] 160 25 °C --1 --0.5 --25 °C --4.5 V --2.5 [MOSFET] VDS= --10V °C --3.0 ID -- VGS --7 V --1.8 --4.0 V --3.5 [MOSFET] --2.0V 75 --3. 5 V --3. 0 --2 V .5V --4.0 Drain Current, ID -- A S Drain Current, ID -- A P.G --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 IT06417 Gate-to-Source Voltage, VGS -- V RDS(on) -- Tc [MOSFET] 160 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 140 120 100 ID= --0.3A --2.0A 80 60 40 20 0 0 --1 --2 --3 --4 --5 --6 --7 --8 Gate-to-Source Voltage, VGS -- V --9 --10 IT11827 140 .8V --1 S= VG , 3A . 120 --0 I D= 100 , 1.0A -I D= 80 2.5V = -S VG .5V = --4 VGS .0A, --2 I D= 60 40 20 --60 --40 --20 0 20 40 60 80 100 Case Temperature, Tc -- °C 120 140 160 IT11828 No. A0536-3/6 VEC2819 2 10 7 °C --25 Ta= 5 C 75° 3 C 25° 2 2 5 3 7 2 --1.0 5 3 Drain Current, ID -- A SW Time -- ID 5 --10 IT06420 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.001 --0.2 [MOSFET] --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --1.2 IT06421 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS [MOSFET] 2 f=1MHz 1000 td(off) 100 7 tf 5 tr 3 2 td(on) Ciss 7 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 7 2 5 3 2 Coss 100 Crss 7 10 5 7 5 --0.1 3 2 3 5 7 2 --1.0 3 Drain Current, ID -- A 5 7 0 3 2 --10 7 5 Drain Current, ID -- A --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 0 0 2 4 6 8 Total Gate Charge, Qg -- nC PD -- Ta 1.2 1.0 M ou nt ed on a 0.8 0.6 ce ra m ic bo ar d 0.4 0.2 10 IT06424 --6 --8 --10 --12 --14 IDP= --14A --16 --18 --20 PW≤10µs 10 0µ s 10m 1ms s ID= --3.5A 3 2 10 0m --1.0 7 5 DC 3 2 Operation in this area is limited by RDS(on). op era s tio n --0.1 7 5 3 2 --0.5 --4 Drain-to-Source Voltage, VDS -- V IT06423 ASO [MOSFET] [MOSFET] VDS= --10V ID= --3A --4.0 --2 IT06422 VGS -- Qg --4.5 Gate-to-Source Voltage, VGS -- V VGS=0V VDD= --10V VGS= --4.5V 3 Allowable Power Dissipation, PD -- W [MOSFET] --0.01 7 5 3 2 1.0 7 --0.1 IS -- VSD --10 7 5 3 2 Source Current, IS -- A Forward Transfer Admittance, yfs -- S [MOSFET] VDS= --10V Ta= 75° C 25° C --25 °C yfs -- ID 3 Ta=25°C Single pulse Mounted on a ceramic board (1200mm2✕0.8mm) 1unit --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT11783 [MOSFET] (1 20 0m m2 ✕ 0.8 m m )1 un it 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT11784 No. A0536-4/6 VEC2819 IF -- VF 7 5 100 7 5 3 2 Reverse Current, IR -- mA 1.0 7 5 3 2 5°C 100 °C 75 ° C 50° C 25° C 0°C --25 °C 0.1 7 5 3 7 5 3 2 75°C 1.0 7 5 3 2 50°C 0.1 7 5 3 2 25°C 0.01 7 5 3 2 0°C 0.001 7 5 3 2 --25°C 0.0001 7 5 3 2 2 0.00001 0.01 0.1 0.2 0.3 0.4 0.5 Forward Voltage, VF -- V [SBD] 5 3 2 100 7 5 3 2 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Reverse Voltage, VR -- V 3 5 7 IT08590 IFSM -- t 14 5 10 15 20 25 30 Reverse Voltage, VR -- V IT08588 C -- VR 7 0 0.6 Average Forward Power Dissipation, PF(AV) -- W 0 Interterminal Capacitance, C -- pF [SBD] Ta=125°C 100°C 10 Ta= 12 Forward Current, IF -- A 3 2 Surge Forward Current, IFSM(Peak) -- A IR -- VR [SBD] PF(AV) -- IO 1.4 Rectangular wave (1) 1.2 35 IT08589 [SBD] (2)(4)(3) θ 360° 1.0 Sine wave 0.8 180° 360° 0.6 0.4 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 0.2 0 0 0.5 1.0 1.5 2.0 Average Output Current, IO -- A 2.5 IT08591 [SBD] Current waveform 50Hz sine wave 12 IS 20ms t 10 8 6 4 2 0 7 0.01 2 3 5 7 0.1 2 Time, t -- s 3 5 7 1.0 2 3 ID00435 No. A0536-5/6 VEC2819 Note on usage : Since the VEC2819 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2007. Specifications and information herein are subject to change without notice. PS No. A0536-6/6