SANYO VEC2819

VEC2819
Ordering number : ENA0536
SANYO Semiconductors
DATA SHEET
VEC2819
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
Features
DC / DC converter.
Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package
facilitating high-density mounting.
[MOSFET]
• Low ON-resistance
• Ultrahigh-speed switching.
• 1.8V drive.
[SBD]
• Low switching noise.
• Low leakage current and high reliability due to planar structure.
•
•
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
VDSS
VGSS
±10
V
ID
--3.5
A
IDP
PD
--20
V
PW≤10µs, duty cycle≤1%
--14
A
Mounted on a ceramic board (1200mm2✕0.8mm) 1unit
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +125
°C
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Marking : CT
VRRM
VRSM
30
V
30
V
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
13107PE TI IM TC-00000472 No. A0536-1/6
VEC2819
Continued from preceding page.
Parameter
Symbol
Average Output Current
IO
Surge Forward Current
Junction Temperature
IFSM
Tj
Storage Temperature
Tstg
Conditions
Ratings
Unit
2
50Hz sine wave, 1 cycle
A
10
A
--55 to +125
°C
--55 to +125
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
V(BR)DSS
IDSS
ID=--1mA, VGS=0V
VDS=--20V, VGS=0V
Gate-to-Source Leakage Current
IGSS
VGS(off)
VGS=±8V, VDS=0V
VDS=--10V, ID=--1mA
Forward Transfer Admittance
yfs
RDS(on)1
VDS=--10V, ID=--2A
Static Drain-to-Source On-State Resistance
RDS(on)2
RDS(on)3
Cutoff Voltage
--20
--0.4
3.5
ID=--2A, VGS=--4.5V
ID=--1A, VGS=--2.5V
Input Capacitance
Ciss
Output Capacitance
Coss
ID=--0.3A, VGS=--1.8V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
Rise Time
V
--1
µA
±10
µA
--1.4
5.8
V
S
55
72
mΩ
77
108
mΩ
112
168
mΩ
680
pF
115
pF
VDS=--10V, f=1MHz
80
pF
td(on)
See specified Test Circuit.
12
ns
tr
td(off)
See specified Test Circuit.
57
ns
See specified Test Circuit.
68
ns
tf
Qg
See specified Test Circuit.
58
ns
VDS=--10V, VGS=--4.5V, ID=--3.5A
8.7
nC
Gate-to-Source Charge
Qgs
nC
Qgd
VDS=--10V, VGS=--4.5V, ID=--3.5A
VDS=--10V, VGS=--4.5V, ID=--3.5A
1.5
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
VSD
IS=--3.5A, VGS=0V
VR
VF 1
IR=200µA
IF=1A
VF 2
IF=2A
VR=15V
Turn-OFF Delay Time
Fall Time
Total Gate Charge
1.8
nC
--0.83
--1.2
V
0.4
0.45
V
0.45
0.5
V
30
µA
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
30
Interterminal Capacitance
IR
C
VR=10V, f=1MHz
Reverse Recovery Time
trr
IF=IR=100mA, See specified Test Circuit.
Package Dimensions
0.25
8
0.3
7
7
6
2
3
ns
5
1 : Anode
2 : No Contact
3 : Drain
4 : Drain
5 : Source
6 : Gate
7 : Cathode
8 : Cathode
0.15
6 5
4
0.65
1
2
3
4
Top view
0.75
2.9
0.07
1
pF
20
2.3
0.25
2.8
75
Electrical Connection
unit : mm (typ)
7012-005
8
V
1 : Anode
2 : No Contact
3 : Drain
4 : Drain
5 : Source
6 : Gate
7 : Cathode
8 : Cathode
SANYO : VEC8
No. A0536-2/6
VEC2819
Switching Time Test Circuit
trr Test Circuit
[MOSFET]
[SBD]
Duty≤10%
VDD= --10V
100mA
ID= --2A
RL=5Ω
50Ω
VOUT
D
100Ω
10Ω
100mA
VIN
10µs
PW=10µs
D.C.≤1%
10mA
VIN
0V
--4.5V
--5V
G
trr
VEC2819
50Ω
ID -- VDS
--6
--2.0
--1.5
VGS= --1.5V
--4
--3
--2
Ta
=
--1.0
--5
0
0
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
IT11954
Drain-to-Source Voltage, VDS -- V
RDS(on) -- VGS
[MOSFET]
160
25
°C
--1
--0.5
--25
°C
--4.5
V
--2.5
[MOSFET]
VDS= --10V
°C
--3.0
ID -- VGS
--7
V
--1.8
--4.0
V
--3.5
[MOSFET]
--2.0V
75
--3.
5
V
--3.
0
--2 V
.5V
--4.0
Drain Current, ID -- A
S
Drain Current, ID -- A
P.G
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
--1.8
--2.0
IT06417
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Tc
[MOSFET]
160
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ta=25°C
140
120
100
ID= --0.3A
--2.0A
80
60
40
20
0
0
--1
--2
--3
--4
--5
--6
--7
--8
Gate-to-Source Voltage, VGS -- V
--9
--10
IT11827
140
.8V
--1
S=
VG
,
3A
.
120
--0
I D=
100
,
1.0A
-I D=
80
2.5V
= -S
VG
.5V
= --4
VGS
.0A,
--2
I D=
60
40
20
--60
--40
--20
0
20
40
60
80
100
Case Temperature, Tc -- °C
120
140
160
IT11828
No. A0536-3/6
VEC2819
2
10
7
°C
--25
Ta=
5
C
75°
3
C
25°
2
2
5
3
7
2
--1.0
5
3
Drain Current, ID -- A
SW Time -- ID
5
--10
IT06420
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.001
--0.2
[MOSFET]
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
--1.1
--1.2
IT06421
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- VDS [MOSFET]
2
f=1MHz
1000
td(off)
100
7
tf
5
tr
3
2
td(on)
Ciss
7
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
7
2
5
3
2
Coss
100
Crss
7
10
5
7
5
--0.1
3
2
3
5
7
2
--1.0
3
Drain Current, ID -- A
5
7
0
3
2
--10
7
5
Drain Current, ID -- A
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
0
0
2
4
6
8
Total Gate Charge, Qg -- nC
PD -- Ta
1.2
1.0
M
ou
nt
ed
on
a
0.8
0.6
ce
ra
m
ic
bo
ar
d
0.4
0.2
10
IT06424
--6
--8
--10
--12
--14
IDP= --14A
--16
--18
--20
PW≤10µs
10
0µ
s
10m 1ms
s
ID= --3.5A
3
2
10
0m
--1.0
7
5
DC
3
2
Operation in this
area is limited by RDS(on).
op
era
s
tio
n
--0.1
7
5
3
2
--0.5
--4
Drain-to-Source Voltage, VDS -- V
IT06423
ASO
[MOSFET]
[MOSFET]
VDS= --10V
ID= --3A
--4.0
--2
IT06422
VGS -- Qg
--4.5
Gate-to-Source Voltage, VGS -- V
VGS=0V
VDD= --10V
VGS= --4.5V
3
Allowable Power Dissipation, PD -- W
[MOSFET]
--0.01
7
5
3
2
1.0
7
--0.1
IS -- VSD
--10
7
5
3
2
Source Current, IS -- A
Forward Transfer Admittance, yfs -- S
[MOSFET]
VDS= --10V
Ta=
75°
C
25°
C
--25
°C
yfs -- ID
3
Ta=25°C
Single pulse
Mounted on a ceramic board (1200mm2✕0.8mm) 1unit
--0.01
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
Drain-to-Source Voltage, VDS -- V
2
3
IT11783
[MOSFET]
(1
20
0m
m2
✕
0.8
m
m
)1
un
it
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT11784
No. A0536-4/6
VEC2819
IF -- VF
7
5
100
7
5
3
2
Reverse Current, IR -- mA
1.0
7
5
3
2
5°C
100
°C
75 °
C
50°
C
25°
C
0°C
--25
°C
0.1
7
5
3
7
5
3
2
75°C
1.0
7
5
3
2
50°C
0.1
7
5
3
2
25°C
0.01
7
5
3
2
0°C
0.001
7
5
3
2
--25°C
0.0001
7
5
3
2
2
0.00001
0.01
0.1
0.2
0.3
0.4
0.5
Forward Voltage, VF -- V
[SBD]
5
3
2
100
7
5
3
2
0.1
2
3
5 7 1.0
2
3
5 7 10
2
Reverse Voltage, VR -- V
3
5 7
IT08590
IFSM -- t
14
5
10
15
20
25
30
Reverse Voltage, VR -- V
IT08588
C -- VR
7
0
0.6
Average Forward Power Dissipation, PF(AV) -- W
0
Interterminal Capacitance, C -- pF
[SBD]
Ta=125°C
100°C
10
Ta=
12
Forward Current, IF -- A
3
2
Surge Forward Current, IFSM(Peak) -- A
IR -- VR
[SBD]
PF(AV) -- IO
1.4
Rectangular
wave
(1)
1.2
35
IT08589
[SBD]
(2)(4)(3)
θ
360°
1.0
Sine wave
0.8
180°
360°
0.6
0.4
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
0.2
0
0
0.5
1.0
1.5
2.0
Average Output Current, IO -- A
2.5
IT08591
[SBD]
Current waveform 50Hz sine wave
12
IS
20ms
t
10
8
6
4
2
0
7 0.01
2
3
5
7 0.1
2
Time, t -- s
3
5
7 1.0
2
3
ID00435
No. A0536-5/6
VEC2819
Note on usage : Since the VEC2819 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
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or contained herein are controlled under any of applicable local export control laws and regulations, such
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or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of January, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0536-6/6