RoHS 40PT Series RoHS SEMICONDUCTOR Stansard SCRs, 40A 2 Main Features Symbol Value Unit I T(RMS) 40 A V DRM /V RRM 600 to 1600 V I GT 4 to 35 mA 1 2 1 2 3 TO-220AB (non-Insulated) (40PTxxA) 3 TO-220AB (lnsulated) (40PTxxAI) A2 DESCRIPTION The 40PT series of silicon controlled rectifiers are high performance glass passivated technology, and are suitable for general purpose applications, where in-rush current conditions are critical such as overvoltage crowbar protection circuits in power supplies, in-rush current limiting circuits, solid state relay in back to back configuration, welding equipment and high power motor control. A1 A2 G A1 A2 G TO-3P (non-Insulated) (40PTxxB) TO-3P (Insulated) (40PTxxBI) A2 Base on a clip assembly technology, they offer a superior performance in surge current capabilities. A1 A2 1 G (D2PAK) TO-263 (40PTxxH) 2 2 (A2) 3 TO-247AB (non-Insulated) (40PTxxC) (G)3 1(A1) ABSOLUTE MAXIMUM RATINGS PARAMETER RMS on-state current full sine wave (180° conduction angle ) Average on-state current (180° conduction angle) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I2t Value for fusing TEST CONDITIONS SYMBOL IT(RMS) IT(AV) ITSM VALUE UNIT 40 A TO-3P/TO-247AB T c =95°C TO-220AB/TO-263 T c =90°C TO-220AB insulated/TO-3P insulated T c =80°C TO-3P/TO-247AB T c =95°C TO-220AB/TO-263 T c =90°C TO-220AB insulated/TO-3P insulated T c =80°C F =50 Hz t = 20 ms 460 F =60 Hz t = 16.7 ms 480 I2t t p = 10 ms Critical rate of rise of on-state current IG = 2xlGT, tr≤100ns dI/dt F = 60 Hz Peak gate current IGM Maximum gate power 25 A A 1058 A2s T j = 125ºC 50 A/µs T p = 20 µs T j = 125ºC 4 A PGM T p =20µs T j = 125ºC 10 W Average gate power dissipation PG(AV) T j =125ºC 1 W Repetitive peak off-state voltage VDRM VRRM T j =125ºC 600 to 1600 V Repetitive peak reverse voltage Storage temperature range Tstg - 40 to + 150 Tj - 40 to + 125 V RGM 5 ºC Operating junction temperature range Maximum peak reverse gate voltage www.nellsemi.com Page 1 of 5 V RoHS 40PT Series RoHS SEMICONDUCTOR ELECTRICAL SPECIFICATIONS (TJ = 25 ºC unless otherwise specified) SYMBOL Unit 40PTxxxx TEST CONDITIONS Min. 4 Max. 35 Max. 1.3 V Min. 0.2 V IGT mA V D = 12V, R L = 33Ω VGT V D = V DRM , R L = 3.3KΩ, R GK = 220Ω VGD T j = 125°C IH I T = 500mA, Gate open Max. 75 mA IL I G = 1.2×I GT Max. 150 mA V D = 67% V DRM , Gate open T j = 125°C Min. 1000 V/µs VTM I T = 80A, t P = 380µs T j = 25°C Max. 1.6 V IDRM IRRM V D =V DRM , V R =V RRM T j = 25°C Max. 10 µA R GK = 220Ω T j = 125°C Max. 4 mA Vto Threshold Voltage T j = 125°C Max. 0.85 V Rd Dynamic Resistance T j = 125°C Max. 10 mΩ dV/dt THERMAL RESISTANCE Rth(j-c) Junction to case (DC) D 2 PAK/TO-220AB/TO-3P/TO-247AB 0.8 TO-220AB insulated/TO-3P insulated 0.9 TO-263( D 2 PAK) 45 TO-220AB/TO-220AB insulated 60 TO-3P/TO-247AB/TO-3P insulated 50 UNIT °C/W S = 1 cm 2 Rth(j-a) VALUE Parameter SYMBOL Junction to ambient °C/W S=Copper surface under tab PRODUCT SELECTOR VOLTAGE (x x) PART NUMBER SENSITIVITY PACKAGE V 35 mA TO-220AB V V 35 mA D 2 PAK V V V 35 mA TO-3P V V V 35 mA TO-247AB 600 V 800 V 1000 V 1200 V 1600 V 40PTxxA/40PTxxAl V V V V 40PTxxH V V V 40PTxxB/40PTxxBI V V 40PTxxC V V ORDERING INFORMATION ORDERING TYPE MARKING PACKAGE WEIGHT BASE Q,TY DELIVERY MODE 40PTxxA 40PTxxA TO-220AB 2.0g 50 Tube 40PTxxAI 40PTxxAI TO-220AB (insulated) 2.3g 50 Tube 40PTxxH 40PTxxH TO-263(D 2 PAK) 2.0g 50 Tube 40PTxxB 40PTxxB TO-3P 4.3g 30 Tube 40PTxxBI 40PTxxBI TO-3P insulated 4.8g 30 Tube 40PTxxC 40PTxxC TO-247AB 5g 30 Tube Note: xx = voltage www.nellsemi.com Page 2 of 5 RoHS 40PT Series RoHS SEMICONDUCTOR ORDERING INFORMATION SCHEME 40 PT 06 Current 40 = 40A, IT(RMS) SCR series Voltage Code 06 = 600V 08 = 800V 10 = 1000V 12 = 1200V 16 = 1600V Package type A = TO-220AB (non-insulated) AI = TO-220AB ( insulated) B = TO-3P (non-insulated) BI = TO-3P ( insulated) C = TO-247AB H = TO-263 (D 2 PAK) Fig.1 Maximum average power dissipation versus average on-state current. Fig.2 RMS on-state current versus case temperature. IT(RMS) P(W) 50 40 α=180° 35 TO-3P TO-247AB D.C. 40 30 25 30 TO-220AB TO-263 20 TO-220AB insulated TO-3P insulated 20 15 36 0° 10 10 5 I T( AV) (A) 0 0 5 10 15 T case (°C) α 20 25 30 Fig.3 Relative variation of thermal impedance versus pulse duration. 0 0 25 75 50 100 125 Fig.4 Relative variation of gate trigger current, holding current and latching current versus junction temperature. l GT , l H , l L [T j ] / l GT ,l H ,l L [T j =25°C] K=[Zth/Rth] 2.5 1.00 Z th(j-c) 2.0 1.5 l GT 0.10 Z th(j-a) 1.0 l H &l L 0.5 t P (s) 0.01 1E-3 1E-2 1E-1 www.nellsemi.com 1E+0 T j (°C) 0.0 1E+1 1E+2 -40 5E+3 Page 3 of 5 -20 0 20 40 60 80 100 120 140 RoHS 40PT Series RoHS SEMICONDUCTOR Fig.6 Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding values of l 2 t . Fig.5 Surge peak on-state current versus number of cycles. 500 ITSM (A) 5000 ITSM (A), l2t (A2s) T j initial = 25°C 450 400 t p = 10ms 350 l TSM One cycle Non repetitive T j initial = 25°C 300 l 2t 1000 250 200 Repetitive T c = 95°C 150 dl/dt limitation 100 50 Number of cycles 10 1 100 T p (ms) 100 0.01 0 1000 0.10 1.00 10.00 Fig.7 On-state characteristics (maximum values) 500 ITM (A) T j = max.: V to =0.85V R d = 10mΩ 100 T j = max 10 T j = 25°C V TM (V) 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Case Style TO-220AB 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) 4.70 (0.185) 4.44 (0.1754) 3.91 (0.154) 3.74 (0.148) 1.39 (0.055) 1.14 (0.045) 2.87 (0.113) 2.62 (0.103) 3.68 (0.145) 3.43 (0.135) 1 PIN 2 16.13 (0.635) 15.87 (0.625) 3 4.06 (0.160) 3.56 (0.140) 15.32 (0.603) 14.55 (0.573) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 2.79 (0.110) 2.54 (0.100) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) 14.22 (0.560) 13.46 (0.530) 0.90 (0.035) 0.70 (0.028) 5.20 (0.205) 4.95 (0.195) 0.56 (0.022) 0.36 (0.014) 2 (A2) (G)3 1(A1) www.nellsemi.com Page 4 of 5 RoHS 40PT Series RoHS SEMICONDUCTOR Case Style TO-3P TO-263(D 2 PAK) 10.45 (0.411) 9.65 (0.380) 4.83 (0.190) 4.06 (0.160) 1.40 (0.055) 1.14 (0.045) 6.22 (0.245) 1.40 (0.055) 1.19 (0.047) 9.14 (0.360) 8.13 (0.320) 15.85 (0.624) 15.00 (0.591) 0 to 0.254 (0 to 0.01) 2.79 (0.110) 2.29 (0.090) 0.940 (0.037) 0.686 (0.027) 0.53 (0.021) 0.36 (0.014) 2.67 (0.105) 2.41 (0.095) 3.56 (0.140) 2.79 (0.110) 5.20 (0.205) 4.95 (0.195) TO-247AB 4.69 (0.185) 5.31 (0.209) 1.49 (0.059) 2.49 (0.098) 15.49 (0.610) 16.26 (0.640) 5.38 (0.212) 6.20 (0.244) 16.15 (0.242) Anode 20.80 (0.819) 21.46 (0.845) 1 4.50 (0.177)Max 0.40 (0.016) 0.79 (0.031) RoHS 3.55 (0.138) 3.81 (0.150) 19.81 (0.780) 20.32 (0.800) 2 3 2.87 (0.113) 3.12 (0.123) 1.65 (0.065) (TYP.) 2.13 (0.084) 1.01 (0.040) 1.40 (0.055) (TYP.) 2.21 (0.087) 2.59 (0.102) 5.45 (0.215) 5.45 (0.215) 2 (A2) (G)3 1(A1) www.nellsemi.com Page 5 of 5