NELLSEMI 40PT12A

RoHS
40PT Series RoHS
SEMICONDUCTOR
Stansard SCRs, 40A
2
Main Features
Symbol
Value
Unit
I T(RMS)
40
A
V DRM /V RRM
600 to 1600
V
I GT
4 to 35
mA
1
2
1
2
3
TO-220AB (non-Insulated)
(40PTxxA)
3
TO-220AB (lnsulated)
(40PTxxAI)
A2
DESCRIPTION
The 40PT series of silicon controlled rectifiers are
high performance glass passivated technology,
and are suitable for general purpose applications,
where in-rush current conditions are critical such
as overvoltage crowbar protection circuits in power
supplies, in-rush current limiting circuits, solid
state relay in back to back configuration, welding
equipment and high power motor control.
A1 A2 G
A1 A2
G
TO-3P (non-Insulated)
(40PTxxB)
TO-3P (Insulated)
(40PTxxBI)
A2
Base on a clip assembly technology, they offer a
superior performance in surge current capabilities.
A1 A2
1
G
(D2PAK)
TO-263
(40PTxxH)
2
2
(A2)
3
TO-247AB (non-Insulated)
(40PTxxC)
(G)3
1(A1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current full sine wave
(180° conduction angle )
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I2t Value for fusing
TEST CONDITIONS
SYMBOL
IT(RMS)
IT(AV)
ITSM
VALUE
UNIT
40
A
TO-3P/TO-247AB
T c =95°C
TO-220AB/TO-263
T c =90°C
TO-220AB insulated/TO-3P insulated
T c =80°C
TO-3P/TO-247AB
T c =95°C
TO-220AB/TO-263
T c =90°C
TO-220AB insulated/TO-3P insulated
T c =80°C
F =50 Hz
t = 20 ms
460
F =60 Hz
t = 16.7 ms
480
I2t
t p = 10 ms
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
dI/dt
F = 60 Hz
Peak gate current
IGM
Maximum gate power
25
A
A
1058
A2s
T j = 125ºC
50
A/µs
T p = 20 µs
T j = 125ºC
4
A
PGM
T p =20µs
T j = 125ºC
10
W
Average gate power dissipation
PG(AV)
T j =125ºC
1
W
Repetitive peak off-state voltage
VDRM
VRRM
T j =125ºC
600 to 1600
V
Repetitive peak reverse voltage
Storage temperature range
Tstg
- 40 to + 150
Tj
- 40 to + 125
V RGM
5
ºC
Operating junction temperature range
Maximum peak reverse gate voltage
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Page 1 of 5
V
RoHS
40PT Series RoHS
SEMICONDUCTOR
ELECTRICAL SPECIFICATIONS
(TJ = 25 ºC unless otherwise specified)
SYMBOL
Unit
40PTxxxx
TEST CONDITIONS
Min.
4
Max.
35
Max.
1.3
V
Min.
0.2
V
IGT
mA
V D = 12V, R L = 33Ω
VGT
V D = V DRM , R L = 3.3KΩ, R GK = 220Ω
VGD
T j = 125°C
IH
I T = 500mA, Gate open
Max.
75
mA
IL
I G = 1.2×I GT
Max.
150
mA
V D = 67% V DRM , Gate open
T j = 125°C
Min.
1000
V/µs
VTM
I T = 80A, t P = 380µs
T j = 25°C
Max.
1.6
V
IDRM
IRRM
V D =V DRM , V R =V RRM
T j = 25°C
Max.
10
µA
R GK = 220Ω
T j = 125°C
Max.
4
mA
Vto
Threshold Voltage
T j = 125°C
Max.
0.85
V
Rd
Dynamic Resistance
T j = 125°C
Max.
10
mΩ
dV/dt
THERMAL RESISTANCE
Rth(j-c)
Junction to case (DC)
D 2 PAK/TO-220AB/TO-3P/TO-247AB
0.8
TO-220AB insulated/TO-3P insulated
0.9
TO-263( D 2 PAK)
45
TO-220AB/TO-220AB insulated
60
TO-3P/TO-247AB/TO-3P insulated
50
UNIT
°C/W
S = 1 cm 2
Rth(j-a)
VALUE
Parameter
SYMBOL
Junction to ambient
°C/W
S=Copper surface under tab
PRODUCT SELECTOR
VOLTAGE (x x)
PART NUMBER
SENSITIVITY
PACKAGE
V
35 mA
TO-220AB
V
V
35 mA
D 2 PAK
V
V
V
35 mA
TO-3P
V
V
V
35 mA
TO-247AB
600 V
800 V
1000 V
1200 V
1600 V
40PTxxA/40PTxxAl
V
V
V
V
40PTxxH
V
V
V
40PTxxB/40PTxxBI
V
V
40PTxxC
V
V
ORDERING INFORMATION
ORDERING TYPE
MARKING
PACKAGE
WEIGHT
BASE Q,TY
DELIVERY MODE
40PTxxA
40PTxxA
TO-220AB
2.0g
50
Tube
40PTxxAI
40PTxxAI
TO-220AB (insulated)
2.3g
50
Tube
40PTxxH
40PTxxH
TO-263(D 2 PAK)
2.0g
50
Tube
40PTxxB
40PTxxB
TO-3P
4.3g
30
Tube
40PTxxBI
40PTxxBI
TO-3P insulated
4.8g
30
Tube
40PTxxC
40PTxxC
TO-247AB
5g
30
Tube
Note: xx = voltage
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Page 2 of 5
RoHS
40PT Series RoHS
SEMICONDUCTOR
ORDERING INFORMATION SCHEME
40 PT 06
Current
40 = 40A, IT(RMS)
SCR series
Voltage Code
06 = 600V
08 = 800V
10 = 1000V
12 = 1200V
16 = 1600V
Package type
A = TO-220AB (non-insulated)
AI = TO-220AB ( insulated)
B = TO-3P (non-insulated)
BI = TO-3P ( insulated)
C = TO-247AB
H = TO-263 (D 2 PAK)
Fig.1 Maximum average power dissipation
versus average on-state current.
Fig.2 RMS on-state current versus case
temperature.
IT(RMS)
P(W)
50
40
α=180°
35
TO-3P
TO-247AB
D.C.
40
30
25
30
TO-220AB
TO-263
20
TO-220AB insulated
TO-3P insulated
20
15
36 0°
10
10
5
I T( AV) (A)
0
0
5
10
15
T case (°C)
α
20
25
30
Fig.3 Relative variation of thermal impedance
versus pulse duration.
0
0
25
75
50
100
125
Fig.4 Relative variation of gate trigger current,
holding current and latching current versus
junction temperature.
l GT , l H , l L [T j ] / l GT ,l H ,l L [T j =25°C]
K=[Zth/Rth]
2.5
1.00
Z th(j-c)
2.0
1.5
l GT
0.10
Z th(j-a)
1.0
l H &l L
0.5
t P (s)
0.01
1E-3
1E-2
1E-1
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1E+0
T j (°C)
0.0
1E+1
1E+2
-40
5E+3
Page 3 of 5
-20
0
20
40
60
80
100
120
140
RoHS
40PT Series RoHS
SEMICONDUCTOR
Fig.6 Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width tp < 10 ms, and corresponding
values of l 2 t .
Fig.5 Surge peak on-state current versus
number of cycles.
500
ITSM (A)
5000
ITSM (A), l2t (A2s)
T j initial = 25°C
450
400
t p = 10ms
350
l TSM
One cycle
Non repetitive
T j initial = 25°C
300
l 2t
1000
250
200
Repetitive
T c = 95°C
150
dl/dt limitation
100
50
Number of cycles
10
1
100
T p (ms)
100
0.01
0
1000
0.10
1.00
10.00
Fig.7 On-state characteristics
(maximum values)
500
ITM (A)
T j = max.:
V to =0.85V
R d = 10mΩ
100
T j = max
10
T j = 25°C
V TM (V)
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Case Style
TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
4.70 (0.185)
4.44 (0.1754)
3.91 (0.154)
3.74 (0.148)
1.39 (0.055)
1.14 (0.045)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
1
PIN
2
16.13 (0.635)
15.87 (0.625)
3
4.06 (0.160)
3.56 (0.140)
15.32 (0.603)
14.55 (0.573)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
14.22 (0.560)
13.46 (0.530)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
0.56 (0.022)
0.36 (0.014)
2
(A2)
(G)3
1(A1)
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Page 4 of 5
RoHS
40PT Series RoHS
SEMICONDUCTOR
Case Style
TO-3P
TO-263(D 2 PAK)
10.45 (0.411)
9.65 (0.380)
4.83 (0.190)
4.06 (0.160)
1.40 (0.055)
1.14 (0.045)
6.22 (0.245)
1.40 (0.055)
1.19 (0.047)
9.14 (0.360)
8.13 (0.320)
15.85 (0.624)
15.00 (0.591)
0 to 0.254 (0 to 0.01)
2.79 (0.110)
2.29 (0.090)
0.940 (0.037)
0.686 (0.027)
0.53 (0.021)
0.36 (0.014)
2.67 (0.105)
2.41 (0.095)
3.56 (0.140)
2.79 (0.110)
5.20 (0.205)
4.95 (0.195)
TO-247AB
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
15.49 (0.610)
16.26 (0.640)
5.38 (0.212)
6.20 (0.244)
16.15 (0.242)
Anode
20.80 (0.819)
21.46 (0.845)
1
4.50 (0.177)Max
0.40 (0.016)
0.79 (0.031)
RoHS
3.55 (0.138)
3.81 (0.150)
19.81 (0.780)
20.32 (0.800)
2
3
2.87 (0.113)
3.12 (0.123)
1.65 (0.065)
(TYP.)
2.13 (0.084)
1.01 (0.040)
1.40 (0.055)
(TYP.)
2.21 (0.087)
2.59 (0.102)
5.45 (0.215)
5.45 (0.215)
2
(A2)
(G)3
1(A1)
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