STMICROELECTRONICS VND600PEP

VND600PEP
®
DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY
TARGET SPECIFICATION
TYPE
VND600PEP
■
RDS(on)
30mΩ
Ilim
25A
VCC
36V
DC SHORT CIRCUIT CURRENT: 25A
CMOS COMPATIBLE INPUTS
PROPORTIONAL LOAD CURRENT SENSE
■ UNDERVOLTAGE AND OVERVOLTAGE
SHUT-DOWN
■ OVERVOLTAGE CLAMP
■ THERMAL SHUT-DOWN
■ CURRENT LIMITATION
■ VERY LOW STAND-BY POWER DISSIPATION
■ PROTECTION AGAINST:
nLOSS OF GROUND AND LOSS OF VCC
■ REVERSE BATTERY PROTECTION (*)
■
■
DESCRIPTION
The VND600PEP is a monolithic device made
using
STMicroelectronics
VIPower
M0-3
technology. It is intended for driving resistive or
inductive loads with one side connected to
ground. Active VCC pin voltage clamp protects the
PowerSSO-24
ORDER CODES
PACKAGE
TUBE
PowerSSO-24 VND600PEP
T&R
VND600PEP13TR
device against low energy spikes (see ISO7637
transient compatibility table). This device has two
channels in high side configuration; each channel
has an analog sense output on which the sensing
current is proportional (according to a known ratio)
to the corresponding load current. Built-in thermal
shut-down and outputs current limitation protect
the chip from over temperature and short circuit.
Device turns off in case of ground pin
disconnection.
BLOCK DIAGRAM
VCC
OVERVOLTAGE
VCC CLAMP
UNDERVOLTAGE
PwCLAMP 1
DRIVER 1
OUTPUT 1
ILIM1
INPUT 1
Vdslim1
LOGIC
IOUT1
INPUT 2
Ot1
CURRENT
SENSE 1
K
PwCLAMP 2
DRIVER 2
GND
Ot1
OVERTEMP. 2
Vdslim2
Ot2
OUTPUT 2
ILIM2
OVERTEMP. 1
IOUT2
K
Ot2
CURRENT
SENSE 2
(*) See application schematic at page 8
October 2003 - Revision 1.4 (Working document)
1/11
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
VND600PEP
ABSOLUTE MAXIMUM RATING
Symbol
VCC
-VCC
- IGND
IOUT
IR
IIN
VCSENSE
Parameter
DC supply voltage
Reverse supply voltage
DC reverse ground pin current
Output current
Reverse output current
Input current
Value
41
-0.3
-200
Internally limited
-21
+/- 10
-3
Current sense maximum voltage
Unit
V
V
mA
A
A
mA
V
+15
V
- INPUT
4000
V
- CURRENT SENSE
2000
V
- OUTPUT
5000
V
5000
96
Internally limited
-40 to 150
-55 to 150
V
W
°C
°C
°C
Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF)
VESD
Ptot
Tj
Tc
TSTG
- VCC
Power dissipation at Tc=25°C
Junction operating temperature
Case operating temperature
Storage temperature
CONNECTION DIAGRAM (TOP VIEW)
VCC
GND
NC
INPUT2
NC
INPUT1
NC
C.SENSE1
NC
C.SENSE2
NC
VCC
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
OUTPUT2
OUTPUT2
OUTPUT2
OUTPUT2
OUTPUT2
OUTPUT2
OUTPUT1
OUTPUT1
OUTPUT1
OUTPUT1
OUTPUT1
OUTPUT1
TAB = VCC
CURRENT AND VOLTAGE CONVENTIONS
IS
VCC
IIN1
INPUT1
VIN1
OUTPUT1
VIN2
IOUT2
INPUT2
VOUT1
ISENSE1
CURRENT SENSE 1
IIN2
OUTPUT2
CURRENT SENSE 2
GROUND
IGND
2/11
VCC
IOUT1
VSENSE1
V
ISENSE2 OUT2
VSENSE2
VND600PEP
THERMAL DATA
Symbol
Rthj-case (1)
Rthj-case (2)
Rthj-amb
Parameter
Thermal resistance junction-case
Thermal resistance junction-case
Thermal resistance junction-ambient
Value
1.8
1.3
60 (*)
(MAX)
(MAX)
(MAX)
Unit
°C/W
°C/W
°C/W
(*) When mounted on a standard single-sided FR-4 board with 1cm2 of Cu (at least 35µm thick).
Note: (1) one channel ON - (2) two channels ON
ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C<Tj<150°C; unless otherwise specified)
(Per each channel)
POWER
Symbol
VCC (**)
VUSD (**)
VOV (**)
Parameter
Operating supply voltage
Undervoltage shutdown
Overvoltage shutdown
Test Conditions
Min
5.5
3
36
Typ
13
4
30
Unit
V
V
V
mΩ
On state resistance
IOUT=5A; Tj=150°C
60
mΩ
Clamp Voltage
IOUT=3A; VCC=6V
ICC=20mA (see note 3)
Off State; VCC=13V; VIN=VOUT=0V
48
12
100
55
40
mΩ
V
µA
Off State; VCC=13V; VIN=VOUT=0V; Tj=25°C
12
25
µA
6
50
0
5
3
mA
µA
µA
µA
µA
Typ
30
30
See
relative
diagram
See
relative
diagram
Max
Unit
µs
µs
Typ
40
Max
70
Unit
A
70
A
200
°C
IOUT=5A; Tj=25°C
RON
Vclamp
IS (**)
Supply current
IL(off1)
IL(off2)
IL(off3)
IL(off4)
Off State
Off State
Off State
Off State
Output Current
Output Current
Output Current
Output Current
On state; VIN=5V; VCC=13V; IOUT=0A;
RSENSE=3.9kΩ
VIN=VOUT=VSENSE=0V
VIN=VSENSE=0V; VOUT=3.5V
VIN=VOUT=VSENSE=0V; VCC=13V; Tj =125°C
VIN=VOUT=VSENSE=0V; VCC=13V; Tj =25°C
41
0
-75
Max
36
5.5
SWITCHING (VCC=13V)
Symbol
td(on)
td(off)
Parameter
Turn-on delay time
Turn-on delay time
Test Conditions
RL=2.6Ω (see figure 1)
RL=2.6Ω (see figure 1)
(dVOUT/dt)on Turn-on voltage slope
RL=2.6Ω (see figure 1)
(dVOUT/dt)off Turn-off voltage slope
RL=2.6Ω (see figure 1)
Min
V/µs
V/µs
PROTECTIONS
Symbol
Ilim
TTSD
TR
THYST
Vdemag
VON
Parameter
DC short circuit current
Test Conditions
VCC=13V
5.5V<VCC<36V
Thermal shut-down
temperature
Thermal reset temperature
Thermal hysteresis
Turn-off output voltage
clamp
Output voltage drop
limitation
Min
25
IOUT=2A; VIN=0V; L=6mH
IOUT=0.5A; Tj= -40°C...+150°C
150
175
135
7
15
°C
°C
VCC-41 VCC-48 VCC-55
V
50
mV
(**) Per device.
3/11
1
VND600PEP
ELECTRICAL CHARACTERISTICS (continued)
CURRENT SENSE (9V≤VCC≤16V) (See figure 1)
Symbol
K1
dK1/K1
K2
dK2/K2
K3
dK3/K3
VSENSE1,2
VSENSEH
RVSENSEH
tDSENSE
Parameter
IOUT/ISENSE
Current Sense Ratio Drift
IOUT/ISENSE
Current Sense Ratio Drift
IOUT/ISENSE
Current Sense Ratio Drift
Max analog sense
output voltage
Analog sense output
voltage in overtemperature
condition
Analog sense output
impedance in
overtemperature condition
Current sense delay
response
Test Conditions
IOUT1 or IOUT2=0.5A; VSENSE=0.5V;
other channels open; Tj= -40°C...150°C
IOUT1 or IOUT2=0.5A; VSENSE=0.5V;
other channels open; Tj= -40°C...150°C
Min
Typ
Max
3300
4400
6000
-10
+10
IOUT1 or IOUT2=5A; VSENSE=4V; other
channels open; Tj=-40°C
4200
4900
6000
Tj=25°C...150°C
4400
4900
5750
IOUT1 or IOUT2=5A; VSENSE=4V; other
channels open; Tj=-40°C...150°C
-6
+6
IOUT1 or IOUT2=15A; VSENSE=4V; other
channels open; Tj=-40°C
4200
4900
5500
Tj=25°C...150°C
4400
4900
5250
IOUT1 or IOUT2=15A; VSENSE=4V; other
channels open; Tj=-40°C...150°C
VCC=5.5V; IOUT1,2=2.5A; RSENSE=10kΩ
VCC>8V, IOUT1,2=5A; RSENSE=10kΩ
-6
+6
Unit
%
%
%
2
V
4
V
VCC=13V; RSENSE=3.9kΩ
VCC=13V; Tj>TTSD; All Channels Open
5.5
V
400
Ω
to 90% ISENSE (see note 4)
500
µs
Max
1.25
Unit
V
µA
V
µA
V
V
LOGIC INPUT (Channels 1,2)
Symbol
VIL
IIL
VIH
IIH
VI(hyst)
VICL
Parameter
Input low level voltage
Low level input current
Input high level voltage
High level input current
Input hysteresis voltage
Input clamp voltage
Test Conditions
VIN=1.25V
4/11
2
Typ
1
3.25
VIN=3.25V
IIN=1mA
IIN=-1mA
Note 3: Vclamp and VOV are correlated. Typical difference is 5V.
Note 4: current sense signal delay after positive input slope.
Note: Sense pin doesn’t have to be left floating.
Min
10
0.5
6
6.8
-0.7
8
V
VND600PEP
TRUTH TABLE (per channel)
CONDITIONS
Normal operation
Overtemperature
Undervoltage
Overvoltage
Short circuit to GND
Short circuit to VCC
Negative output voltage
clamp
INPUT
OUTPUT
SENSE
L
L
H
L
H
L
0
Nominal
H
L
L
L
VSENSEH
0
H
L
L
L
0
0
H
L
L
L
0
0
H
L
(Tj<TTSD) 0
H
L
L
H
(Tj>TTSD) VSENSEH
0
H
H
< Nominal
L
L
0
0
5/11
VND600PEP
ELECTRICAL TRANSIENT REQUIREMENTS
ISO T/R 7637/1
Test Pulse
1
2
3a
3b
4
5
ISO T/R 7637/1
Test Pulse
E
II
TEST LEVELS
III
IV
-25 V
+25 V
-25 V
+25 V
-4 V
+26.5 V
-50 V
+50 V
-50 V
+50 V
-5 V
+46.5 V
-75 V
+75 V
-100 V
+75 V
-6 V
+66.5 V
-100 V
+100 V
-150 V
+100 V
-7 V
+86.5 V
Delays and
Impedance
2 ms 10 Ω
0.2 ms 10 Ω
0.1 µs 50 Ω
0.1 µs 50 Ω
100 ms, 0.01 Ω
400 ms, 2 Ω
TEST LEVELS RESULTS
II
III
C
C
C
C
C
C
C
C
C
C
E
E
I
C
C
C
C
C
C
1
2
3a
3b
4
5
CLASS
C
I
IV
C
C
C
C
C
E
CONTENTS
All functions of the device are performed as designed after exposure to disturbance.
One or more functions of the device is not performed as designed after exposure to disturbance
and cannot be returned to proper operation without replacing the device.
Figure 1: Switching Characteristics (Resistive load RL=2.6Ω)
VOUT
90%
80%
dVOUT /dt(off)
dVOUT /dt(on)
tr
10%
tf
t
ISENSE
90%
INPUT
t
tDSENSE
td(on)
td(off)
t
6/11
VND600PEP
Figure 2: Waveforms
NORMAL OPERATION
INPUTn
LOAD CURRENTn
SENSEn
UNDERVOLTAGE
VCC
VUSDhyst
VUSD
INPUTn
LOAD CURRENTn
SENSEn
OVERVOLTAGE
VOV
VCC
VCC < VOV
VCC > VOV
INPUTn
LOAD CURRENTn
SENSEn
SHORT TO GROUND
INPUTn
LOAD CURRENTn
LOAD VOLTAGEn
SENSEn
SHORT TO VCC
INPUTn
LOAD VOLTAGEn
LOAD CURRENTn
SENSEn
<Nominal
<Nominal
OVERTEMPERATURE
Tj
TTSD
TR
INPUTn
LOAD CURRENTn
SENSEn
ISENSE=
VSENSEH
RSENSE
7/11
VND600PEP
APPLICATION SCHEMATIC
+5V
Rprot
INPUT1
VCC
Dld
µC
Rprot
CURRENT SENSE1
Rprot
INPUT2
Rprot
CURRENT SENSE2
OUTPUT1
GND
RSENSE1
RSENSE2
GND PROTECTION
REVERSE BATTERY
NETWORK
VGND
AGAINST
Solution 1: Resistor in the ground line (RGND only). This
can be used with any type of load.
The following is an indication on how to dimension the
RGND resistor.
1) RGND ≤ 600mV / IS(on)max.
2) RGND ≥ (−VCC) / (-IGND)
where -IGND is the DC reverse ground pin current and can
be found in the absolute maximum rating section of the
device’s datasheet.
Power Dissipation in RGND (when VCC<0: during reverse
battery situations) is:
PD= (-VCC)2/RGND
This resistor can be shared amongst several different
HSD. Please note that the value of this resistor should be
calculated with formula (1) where IS(on)max becomes the
sum of the maximum on-state currents of the different
devices.
Please note that if the microprocessor ground is not
common with the device ground then the RGND will
produce a shift (IS(on)max * RGND) in the input thresholds
and the status output values. This shift will vary
depending on how many devices are ON in the case of
several high side drivers sharing the same RGND.
8/11
RGND
OUTPUT2
DGND
If the calculated power dissipation leads to a large resistor
or several devices have to share the same resistor then
the ST suggests to utilize Solution 2 (see below).
Solution 2: A diode (DGND) in the ground line.
A resistor (RGND=1kΩ) should be inserted in parallel to
DGND if the device will be driving an inductive load.
This small signal diode can be safely shared amongst
several different HSDs. Also in this case, the presence of
the ground network will produce a shift (j600mV) in the
input thresholds and the status output values if the
microprocessor ground is not common with the device
ground. This shift will not vary if more than one HSD
shares the same diode/resistor network.
Series resistor in INPUT and STATUS lines are also
required to prevent that, during battery voltage transient,
the current exceeds the Absolute Maximum Rating.
Safest configuration for unused INPUT and STATUS pin
is to leave them unconnected.
LOAD DUMP PROTECTION
Dld is necessary (Voltage Transient Suppressor) if the
load dump peak voltage exceeds VCC max DC rating. The
same applies if the device will be subject to transients on
the VCC line that are greater than the ones shown in the
ISO T/R 7637/1 table.
VND600PEP
µC I/Os PROTECTION:
-VCCpeak/Ilatchup ≤ Rprot ≤ (VOHµC-VIH-VGND) / IIHmax
If a ground protection network is used and negative
transient are present on the VCC line, the control pins will
be pulled negative. ST suggests to insert a resistor (Rprot)
in line to prevent the µC I/Os pins to latch-up.
The value of these resistors is a compromise between the
leakage current of µC and the current required by the
HSD I/Os (Input levels compatibility) with the latch-up limit
of µC I/Os.
Calculation example:
For VCCpeak= - 100V and Ilatchup ≥ 20mA; VOHµC ≥ 4.5V
5kΩ ≤ Rprot ≤ 65kΩ.
Recommended Rprot value is 10kΩ.
Figure 3: IOUT/ISENSE versus IOUT
IOUT/ISENSE
6500
6000
max.Tj=-40°C
5500
max.Tj=25...150°C
5000
typical value
min.Tj=25...150°C
4500
4000
min.Tj=-40°C
3500
3000
0
2
4
6
8
10
12
14
16
IOUT (A)
9/11
VND600PEP
mm.
DIM.
MIN.
A2
1.9
a1
0
b
0.34
c
0.23
D
10.2
E
7.4
e
H
L
10.1
0.55
N
10/11
0.4
0.46
0.32
10.4
7.6
8.8
PR
EL
h
0.07
IM
G1
2.15
0.8
e3
G
MAX.
2.22
A
1.9
IN
A
TYP
RY
PowerSSO-24™ MECHANICAL DATA
0.1
0.06
10.5
0.4
0.85
10º
X
3.9
4.3
Y
6.1
6.5
VND600PEP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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11/11