VNQ830PEP ® QUAD CHANNEL HIGH SIDE DRIVER TARGET SPECIFICATION TYPE VNQ830PEP RDS(on) 60 mΩ (*) IOUT 14 A (*) VCC 36 V (*) Per each channel CMOS COMPATIBLE INPUTS OPEN DRAIN STATUS OUTPUTS ■ ON STATE OPEN LOAD DETECTION ■ OFF STATE OPEN LOAD DETECTION ■ SHORTED LOAD PROTECTION ■ UNDERVOLTAGE AND OVERVOLTAGE SHUTDOWN ■ LOSS OF GROUND PROTECTION ■ VERY LOW STAND-BY CURRENT ■ REVERSE BATTERY PROTECTION (**) ■ ■ PowerSSO-24 ORDER CODES PACKAGE TUBE PowerSSO-24 VNQ830PEP DESCRIPTION The VNQ830PEP is a monolithic device designed in STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active VCC pin voltage clamp protects the device T&R VNQ830PEP13TR against low energy spikes (see ISO7637 transient compatibility table). Active current limitation combined with thermal shutdown and automatic restart protects the device against overload. The device detects open load condition both in on and off state. Output shorted to VCC is detected in the off state.Device automatically turns off in case of ground pin disconnection. BLOCK DIAGRAM VCC VCC CLAMP OUTPUT1 OVERVOLTAGE VCC UNDERVOLTAGE CLAMP 1 GND INPUT1 INPUT2 CONTROL & PROTECTION STATUS2 EQUIVALENT TO CHANNEL1 DRIVER 1 LOGIC VCC STATUS1 CURRENT LIMITER 1 INPUT2 OUTPUT2 OVERTEMP. 1 INPUT3 CONTROL & PROTECTION STATUS3 EQUIVALENT TO CHANNEL1 OUTPUT3 OPENLOAD ON 1 STATUS2 VCC INPUT3 OPENLOAD OFF 1 STATUS3 INPUT4 INPUT4 CONTROL & PROTECTION STATUS4 EQUIVALENT TO CHANNEL1 OUTPUT4 STATUS4 (**) See application schematic at page 8 October 2003 - Revision 1.3 (Working document) 1/11 This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice. VNQ830PEP ABSOLUTE MAXIMUM RATING Symbol VCC - VCC - IGND IOUT - IOUT IIN ISTAT VESD Ptot Tj Tc Tstg Parameter DC Supply Voltage Reverse DC Supply Voltage DC Reverse Ground Pin Current DC Output Current Reverse DC Output Current DC Input Current DC Status Current Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF) Value 41 - 0.3 - 200 Internally Limited - 12 +/- 10 +/- 10 Unit V V mA A A mA mA - INPUT 4000 V - STATUS 4000 V - OUTPUT 5000 V 5000 83 Internally Limited - 40 to 150 - 55 to 150 V W °C °C °C - VCC Power Dissipation TC=25°C Junction Operating Temperature Case Operating Temperature Storage Temperature CONNECTION DIAGRAM (TOP VIEW) VCC GND INPUT1 STATUS1 INPUT2 STATUS2 INPUT3 STATUS3 INPUT4 STATUS4 N.C. VCC 24 23 22 21 20 19 18 17 16 15 14 13 1 2 3 4 5 6 7 8 9 10 11 12 OUTPUT1 OUTPUT1 OUTPUT1 OUTPUT2 OUTPUT2 OUTPUT2 OUTPUT3 OUTPUT3 OUTPUT3 OUTPUT4 OUTPUT4 OUTPUT4 TAB = VCC CURRENT AND VOLTAGE CONVENTIONS IS VINn INPUTn IOUTn ISTATn OUTPUTn STATUSn VOUTn VSTATn GND IGND 2/11 VCC VCC IINn VNQ830PEP THERMAL DATA Symbol Rthj-case Parameter Thermal Resistance Junction-case Value 1.5 Unit °C/W Rthj-amb Thermal Resistance Junction-ambient 52 (*) °C/W (*) When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at least 35µm thick). Horizontal mounting and no artificial air flow. ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C< Tj <150°C, unless otherwise specified) POWER OUTPUT Symbol VCC VUSD VOV Parameter Operating Supply Voltage Undervoltage Shut-down Overvoltage Shut-down RON (*) On State Resistance Test Conditions Min 5.5 3 36 Typ 13 4 Max 36 5.5 IOUT =2A; Tj =25 °C 60 Unit V V V mΩ IOUT =2A; VCC> 8V 20 120 60 mΩ µA Off State; VCC=13V; VIN=VOUT=0V IS IL(off1) (**) IL(off2) (**) IL(off3) (**) IL(off4) (**) Supply Current Off State Output Current Off State Output Current Off State Output Current Off State Output Current Off State; VCC=13V; VIN=VOUT=0V; Tj=25°C 20 40 µA On State; VCC=13V; VIN=5V; IOUT=0A 8.5 13.5 50 0 5 3 mA µA µA µA µA Typ Max Unit VIN=VOUT=0V VIN=0V; VOUT=3.5V VIN=VOUT=0V; VCC=13V; Tj =125°C VIN=VOUT=0V; VCC=13V; Tj =25°C 0 -75 Test Conditions RL=6.5Ω from VIN rising edge to VOUT=1.3V RL=6.5Ω from VIN falling edge to VOUT=11.7V Min (**) Per each channel SWITCHING (VCC =13V) Symbol Parameter td(on) Turn-on Delay Time td(off) Turn-off Delay Time dVOUT/ dt(on) Turn-on Voltage Slope RL=6.5Ω from VOUT=1.3V to VOUT=10.4V dVOUT/ dt(off) Turn-off Voltage Slope RL=6.5Ω from VOUT=11.7V to VOUT=1.3V 30 µs 30 µs See relative diagram See relative diagram V/µs V/µs LOGIC INPUT Symbol VIL IIL VIH IIH VI(hyst) VICL Parameter Input Low Level Low Level Input Current Input High Level High Level Input Current Input Hysteresis Voltage Input Clamp Voltage Test Conditions VIN = 1.25V Min Typ 1 3.25 VIN = 3.25V IIN = 1mA IIN = -1mA Max 1.25 10 0.5 6 6.8 -0.7 8 Unit V µA V µA V V V 3/11 1 VNQ830PEP ELECTRICAL CHARACTERISTICS (continued) VCC - OUTPUT DIODE Symbol VF Parameter Forward on Voltage Test Conditions -IOUT=2A; Tj=150°C Min Typ Max 0.6 Unit V STATUS PIN Symbol VSTAT ILSTAT CSTAT VSCL Parameter Test Conditions Status Low Output Voltage ISTAT= 1.6 mA Status Leakage Current Normal Operation; VSTAT= 5V Status Pin Input Normal Operation; VSTAT= 5V Capacitance ISTAT= 1mA Status Clamp Voltage ISTAT= - 1mA Min 6 Typ 6.8 Max 0.5 10 Unit V µA 100 pF 8 V -0.7 V PROTECTIONS Symbol TTSD TR Thyst tSDL Parameter Shut-down Temperature Reset Temperature Thermal Hysteresis Status Delay in Overload Conditions Ilim Current limitation Vdemag Turn-off Output Clamp Voltage Test Conditions Min 150 135 7 Typ 175 14 18 5.5V < VCC < 36V IOUT=2A; L= 6mH Unit °C °C °C 20 µs 23 A 23 A 15 Tj>TTSD VCC=13V Max 200 VCC-41 VCC-48 VCC-55 V OPENLOAD DETECTION Symbol IOL tDOL(on) VOL TDOL(off) Parameter Openload ON State Detection Threshold Openload ON State Detection Delay Openload OFF State Voltage Detection Threshold Openload Detection Delay at Turn Off Test Conditions Typ Max Unit 35 70 140 mA 200 µs 3.5 V 1000 µs VIN=5V IOUT=0A VIN=0V 1.5 OPEN LOAD STATUS TIMING (with external pull-up) VOUT > VOL Min OVER TEMP STATUS TIMING IOUT< IOL Tj > TTSD VINn VINn VSTATn VSTATn tSDL tDOL(off) 4/11 2 2.5 tDOL(on) tSDL VNQ830PEP Switching time Waveforms VOUTn 90% 80% dVOUT/dt(off) dVOUT/dt(on) 10% t VINn td(on) td(off) t TRUTH TABLE CONDITIONS Normal Operation Current Limitation Overtemperature Undervoltage Overvoltage Output Voltage > VOL Output Current < IOL INPUT L H L H H L H L H L H L H L H OUTPUT L H L X X L L L L L L H H L H STATUS H H H (Tj < TTSD) H (Tj > TTSD) L H L X X H H L H H L 5/11 VNQ830PEP ELECTRICAL TRANSIENT REQUIREMENTS ON VCC PIN ISO T/R 7637/1 Test Pulse I II TEST LEVELS III IV 1 2 3a 3b 4 5 -25 V +25 V -25 V +25 V -4 V +26.5 V -50 V +50 V -50 V +50 V -5 V +46.5 V -75 V +75 V -100 V +75 V -6 V +66.5 V -100 V +100 V -150 V +100 V -7 V +86.5 V ISO T/R 7637/1 Test Pulse 1 2 3a 3b 4 5 CLASS C E 6/11 I C C C C C C TEST LEVELS RESULTS II III C C C C C C C C C C E E Delays and Impedance 2 ms 10 Ω 0.2 ms 10 Ω 0.1 µs 50 Ω 0.1 µs 50 Ω 100 ms, 0.01 Ω 400 ms, 2 Ω IV C C C C C E CONTENTS All functions of the device are performed as designed after exposure to disturbance. One or more functions of the device is not performed as designed after exposure and cannot be returned to proper operation without replacing the device. VNQ830PEP Figure 1: Waveforms NORMAL OPERATION INPUTn OUTPUT VOLTAGEn STATUSn UNDERVOLTAGE VUSDhyst VCC VUSD INPUTn OUTPUT VOLTAGEn STATUSn undefined OVERVOLTAGE VCC<VOV VCC>VOV VCC INPUTn OUTPUT VOLTAGEn STATUSn OPEN LOAD with external pull-up INPUTn VOUT>VOL OUTPUT VOLTAGEn VOL STATUSn OPEN LOAD without external pull-up INPUTn OUTPUT VOLTAGEn STATUSn OVERTEMPERATURE Tj TTSD TR INPUTn OUTPUT CURRENTn STATUSn 7/11 1 VNQ830PEP APPLICATION SCHEMATIC +5V +5V VCC Rprot STATUSn Dld µC Rprot INPUTn OUTPUTn GND RGND VGND GND PROTECTION REVERSE BATTERY NETWORK AGAINST Solution 1: Resistor in the ground line (RGND only). This can be used with any type of load. The following is an indication on how to dimension the RGND resistor. 1) RGND ≤ 600mV / IS(on)max. 2) RGND ≥ (−VCC) / (-IGND) where -IGND is the DC reverse ground pin current and can be found in the absolute maximum rating section of the device’s datasheet. Power Dissipation in RGND (when VCC<0: during reverse battery situations) is: PD= (-VCC)2/RGND This resistor can be shared amongst several different HSD. Please note that the value of this resistor should be calculated with formula (1) where IS(on)max becomes the sum of the maximum on-state currents of the different devices. Please note that if the microprocessor ground is not common with the device ground then the RGND will produce a shift (IS(on)max * RGND) in the input thresholds and the status output values. This shift will vary DGND depending on how many devices are ON in the case of several high side drivers sharing the same RGND. If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor then the ST suggests to utilize Solution 2 (see below). Solution 2: A diode (DGND) in the ground line. A resistor (RGND=1kΩ) should be inserted in parallel to DGND if the device will be driving an inductive load. This small signal diode can be safely shared amongst several different HSD. Also in this case, the presence of the ground network will produce a shift (j600mV) in the input threshold and the status output values if the microprocessor ground is not common with the device ground. This shift will not vary if more than one HSD shares the same diode/resistor network. Series resistor in INPUT and STATUS lines are also required to prevent that, during battery voltage transient, the current exceeds the Absolute Maximum Rating. Safest configuration for unused INPUT and STATUS pin is to leave them unconnected. 8/11 1 1 VNQ830PEP LOAD DUMP PROTECTION OPEN LOAD DETECTION IN OFF STATE Dld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds VCC max DC rating. The same applies if the device will be subject to transients on the VCC line that are greater than the ones shown in the ISO T/R 7637/1 table. Off state open load detection requires an external pull-up resistor (RPU) connected between OUTPUT pin and a positive supply voltage (VPU) like the +5V line used to supply the microprocessor. The external resistor has to be selected according to the following requirements: 1) no false open load indication when load is connected: in this case we have to avoid VOUT to be higher than VOlmin; this results in the following condition VOUT=(VPU/(RL+RPU))RL<VOlmin. 2) no misdetection when load is disconnected: in this case the VOUT has to be higher than VOLmax; this results in the following condition RPU<(VPU–VOLmax)/ IL(off2). Because Is(OFF) may significantly increase if Vout is pulled high (up to several mA), the pull-up resistor RPU should be connected to a supply that is switched OFF when the module is in standby. The values of VOLmin, VOLmax and IL(off2) are available in the Electrical Characteristics section. µC I/Os PROTECTION: If a ground protection network is used and negative transient are present on the VCC line, the control pins will be pulled negative. ST suggests to insert a resistor (Rprot) in line to prevent the µC I/Os pins to latch-up. The value of these resistors is a compromise between the leakage current of µC and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of µC I/Os. -VCCpeak/Ilatchup ≤ Rprot ≤ (VOHµC-VIH-VGND) / IIHmax Calculation example: For VCCpeak= - 100V and I latchup ≥ 20mA; VOHµC ≥ 4.5V 5kΩ ≤ Rprot ≤ 65kΩ. Recommended Rprot value is 10kΩ. Open Load detection in off state V batt. VPU VCC RPU INPUT DRIVER + LOGIC IL(off2) OUT + R STATUS VOL RL GROUND 9/11 VNQ830PEP mm. DIM. MIN. A2 1.9 a1 0 b 0.34 c 0.23 D 10.2 E 7.4 e H L 10.1 0.55 N 10/11 0.4 0.46 0.32 10.4 7.6 8.8 PR EL h 0.07 IM G1 2.15 0.8 e3 G MAX. 2.22 A 1.9 IN A TYP RY PowerSSO-24™ MECHANICAL DATA 0.1 0.06 10.5 0.4 0.85 10º X 3.9 4.3 Y 6.1 6.5 VNQ830PEP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2003 STMicroelectronics - Printed in ITALY- All Rights Reserved. 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