VUB 72-12/16NOXT Three Phase Rectifier Bridge VRRM=1200/1600V IdAVM = 110A with Brake Chopper Part name (Marking on product) VUB72-12NOXT VUB72-16NOXT 6 11 D1 D3 D5 12 10 1 NTC 4 2 D 11 5 ~1 ~7 ~9 6 D2 7 5 12 9 10 D4 D6 T 2 4 Features: Application: Package: •Three phase mains rectifier •Brake chopper: - IGBT with low saturation voltage - HiPerFRED™ free wheeling diode •Drives with - mains input - DC link - inverter or chopper feeding the machine - motor and generator/brake operation •High level of integration •Solder terminals for PCB mounting •UL pending, E72873 •Isolated DCB ceramic base plate •Large creepage and strike distances •High reliability IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 20101119a 1-6 VUB 72-12/16NOXT Chopper IGBT T Symbol VCES Definitions collector emitter voltage VGES max. DC gate voltage continuous IC25 IC80 collector current DC DC TC = 25°C TC = 80°C VCE(sat) collector emitter saturation voltage IC = 35 A; VGE = 15 V TVJ= 25°C TVJ = 125°C VGE(th) gate emitter threshold voltage IC = 1 mA TVJ= 25°C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ= 25°C TVJ=125°C IGES gate emitter leakage current td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse QGon Conditions min. Ratings typ. max. 1200 Unit V -20 +20 V 58 40 A A 2.2 V 6.5 V 0.1 mA mA 500 nA TVJ = 25°C to 150°C 1.85 2.15 5.4 0.1 VCE = 0 V; VGE = ±20 V inductive load TVJ=125°C VCE = 600 V; IC = 35 A VGE = ±15 V; RG = 27 W; L = 100 µH 70 40 250 100 3.8 4.1 ns ns ns ns mJ mJ VCE = 600 V; VGE = 15 V; IC = 35 A 110 nC ICM VCEK reverse bias safe operating area RBSOA; VGE = ±15 V; RG = 27 W; L = 100 µH clamped inductive load; TVJ=125°C tSC (SCSOA) short circuit safe operating area VCE = 900 V; VGE = ±15 V; RG = 27 W; non-repetitive RthJC thermal resistance junction to case RthCH thermal resistance case to heatsink A V 70 < VCES-LS·dI /dt TVJ = 125°C 10 0.65 with heat transfer paste, see mounting instructions 0.9 µs K/W K/W Chopper Diode D Symbol VRRM Definitions max. repetitive reverse voltage Conditions TVJ=150°C Ratings typ. max. 1200 Unit V 25 15 A A 3.1 V V 0.1 min. IF25 IF80 forward current DC TC = 25°C TC =125°C VF forward voltage IF = 25 A TVJ= 25°C TVJ=125°C 2.7 2.0 IR reverse current VR = VRRM TVJ= 25°C TVJ=125°C 0.1 mA mA IRM trr reverse recovery current reverse recovery time IF = 15 A; VR = 600 V diF /dt = -400 A/µs TVJ=125°C 16 130 A ns RthJC thermal resistance junction to case RthJH thermal resistance case to heatsink 2.3 K/W 3.12 K/W Ratings typ. max. 0.85 7 Unit V mW with heat transfer paste Equivalent Circuits for Simulation I V0 Symbol V0 R0 R0 Diode Definitions Conditions D1 - D6 TVJ=125°C V0 R0 IGBT T TVJ=150°C 1.1 40 V mW V0 R0 Diode D TVJ=125°C 1.25 32 V mW IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved min. 20101119a 2-6 VUB 72-12/16NOXT Input Rectifier Diode D1 - D6 Symbol Conditions Ratings min. typ. max. VRRM max. repetitive reverse voltage VUB 72 -12 NO1 VUB 72 -16 NO1 TVJ= 25°C 1200 1600 V V IFAV ID(AV)M IFSM average forward current max. average DC output current max. surge forward current sine 180° rectangular; d = 1/3; bridge t = 10 ms; sine 50 Hz TC = 80°C TC = 80°C TVJ= 25°C 40 110 530 A A A Ptot total power dissipation TC = 25°C 100 W IR reverse current VR = VRRM VR = 0.8·VRRM TVJ= 25°C TVJ=125°C 0.02 0.4 mA mA VF forward voltage IF = 25 A TVJ= 25°C TVJ=125°C 1.0 0.9 1.1 V V RthJC thermal resistance junction to case per diode TVJ= 25°C 1.2 K/W RthJH thermal resistance case to heatsink with heat transfer paste TVJ= 25°C 1.42 K/W Ratings typ. max. Unit Temperature Sensor NTC Symbol Definitions Conditions R25 B25/100 resistance Symbol Definitions Conditions per pin R(T) = R25 · min. 1 eB25/100 T 1 298K T = 25°C 2.2 3560 kW K Module IRMS RMS current TVJ TVJM Tstg operating temperature max. virtual junction temperature storage temperature VISOL isolation voltage IISOL < 1 mA; 50/60 Hz; Md mounting torque (M5) dS dA creep distance on surface strike distance through air Ratings typ. max. -40 -40 Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved min. t = 1 min 2 5 5 Unit 100 A 150 150 125 °C °C °C 3600 V~ 2.5 Nm mm mm 35 g 20101119a 3-6 VUB 72-12/16NOXT Outline Drawing Dimensions in mm (1 mm = 0.0394“) 0,5 +0,2 15,8 ±1 4,6 ±1 Ø0,5 5 ±1 0,25 35 26 63 31,6 3,3 ±0,5 2 8,3 ±1 17 ±0,25 13 R2 50 ±0,2 38,6 14 ±0,3 14 ±0,3 7 ±0,3 7 ±0,3 4x45° 23,5 15 5,5 10 9 8 7 6 ±0,1 5 4 3 2 R R 5,5 11 ±0,3 11 ±0,3 1 R1 25,75 ±0,15 51,5 ±0,3 0,5 Product Marking Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard VUB 72-12NOXT VUB72-12NOXT Box 10 510734 Standard VUB 72-16NOXT VUB72-16NOXT Box 10 510741 IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 20101119a 4-6 VUB 72-12/16NOXT 500 80 VR = 0.8VRRM 70 typ. 60 TVJ = 25°C 50 IF 400 TVJ = 150°C 40 [A] IFSM 300 [A] 200 max. 30 TVJ = 45°C 20 100 10 TVJ = 150°C 0 0.0 0.5 1.0 1.5 0 0.001 2.0 VF [V] 0.01 0.1 1 t [s] Fig. 2 Surge overload current per rectifier diode Fig. 1 Forward current vs. voltage drop per rectifier diode 10000 80 VR = 0 V 70 60 IdAVM [A] 1000 2 50 It 40 TVJ = 45°C TVJ = 150°C [A2s] 30 100 20 10 0 10 0 40 80 120 160 TH [°C] 1 10 t [ms] Fig. 4 I t versus time per rectifier diode 2 Fig. 3 Max. forward current vs. heatsink temperature (Rectifier bridge) 140 120 RthHA [K/W] 0.5 1 1.5 2 3 4 6 100 Ptot 80 [W] 60 40 20 0 0 10 20 30 40 50 60 0 40 IdAVM [A] 80 120 160 TA [°C] Fig. 5 Power dissipation vs. direct output current & ambient temperature (Rectifier bridge) IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 20101119a 5-6 VUB 72-12/16NOXT 70 70 VGE = 15 V 60 [A] TVJ = 25°C IC 40 40 TVJ = 125°C 30 20 10 10 0.5 1.0 1.5 2.0 2.5 TVJ = 125°C [A] 30 20 0 0.0 3.0 9V 0 3.5 0 1 2 VCE [V] VCE 10 8 [mJ] IC = 35 A VCE = 600 V VGE = ±15 V TVJ = 125°C 5 Eoff 6 4 5 6 Eon RG = 27 Ω VCE = 600 V VGE = ±15 V TVJ = 125°C 3 [V] Fig. 7 IGBT, typ. output characteristics Fig. 6 IGBT, typ. output characteristics E 11 V 50 50 IC 13 V VGE = 15 V 17 V 19 V 60 Eon E Eoff [mJ] 4 4 2 0 0 20 40 60 3 20 80 ICE [A] Fig. 8 30 40 50 60 70 80 RG [Ω] Fig. 9 IGBT, typ. switching energy versusgate resistance IGBT, typ. switching energy versus collector current 10000 101 100 chopper diode rectifier diode IGBT 10-1 ZthJC [K/W] 10-2 1000 R [Ω] 100 10-3 single pulse 10-4 10-5 10-4 10-3 10-2 10-1 100 101 t [s] Fig. 10 Typ. transient thermal impedance IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 10 -20 0 20 40 60 80 100 120 140 160 T [°C] Fig. 11 Typ. thermistor resistace vs. temperature 20101119a 6-6 VUB 72-12/16NOXT 3.0 40 35 IF 25 Qr 2.0 IF = 30 A IF = 15 A IF = 7.5 A 1.5 20 [A] VR = 800 V 2.5 TVJ = 25°C 100°C 150°C 30 TVJ = 125°C [µC] 15 1.0 10 0.5 5 0 0 1 2 3 VF [V] 0.0 100 4 Fig. 13 Typ. reverse recovery charge Qr versus -diF/dt Fig. 12 Forward current IF versus VF 50 [A] 2.0 TVJ = 125°C VR = 800 V 40 IRM 1000 -diF /dt [A/µs] 1.5 IF = 30 A 30 IF = 15 A IF = 7.5 A 20 Kf 1.0 IRM 0.5 10 0 Qr 0 200 400 600 800 0.0 1000 0 40 -diF /dt [A/µs] 80 TVJ [°C] 120 160 Fig. 15 Dynamic parameters Qr, I RM versus TVJ Fig. 14 Typ. peak reverse current IRM versus -diF/dt 120 180 1.2 TVJ = 125°C TVJ = 125°C VR = 800 V IF = 15 A VR = 800 V 160 80 trr IF = 30 A IF = 15 A IF = 7.5 A 140 [ns] 0.8 VFR tfr [V] [µs] 40 0.4 120 100 0 200 400 600 800 1000 -diF /dt [A/µs] Fig. 16 Typ. recovery time trr versus -diF/dt IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 0 tfr VFR 0 200 400 600 800 0.0 1000 -diF /dt [A/µs] Fig. 17 Typ. peak forward voltage VFR and tfr versus diF/dt 20101119a 7-6