WTK4435 Surface Mount P-Channel Enhancement Mode MOSFET 7 6 D 3 D S 8 S 2 D S 1 P b Lead(Pb)-Free DRAIN CURRENT -8 AMPERES DRAIN SOURCE VOLTAGE 5 D 4 G -30 VOLTAGE Features: * Super high dense * Cell design for low RDS(ON) * RDS(ON)<20mΩ@VGS = -10V * RDS(ON)<35mΩ@VGS = -4.5V * Simple Drive Requirement * Lower On-resistance * Fast Switching 1 SOP-8 Description: The WTK4435 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Maximum Ratings (TA=25˚C Unless Otherwise Specified) Rating Symbol Value Unite Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V -8 -6 A IDM -50 A PD 2.5 W R θJA 50 °C/W TJ +150 °C Tstg -55 to +150 °C Continuous Drain Current (TA =25°C) (TA =70°C) Pulsed Drain Current (1) Power Dissipation (TA =25°C) Maximax Junction-to-Ambient Operating Junction Temperature Range Storage Temperature Range ID Device Marking WTK4435=4435SC WEITRON http://www.weitron.com.tw 1/6 03-May-07 WTK4435 Electrical Characteristics (TA =25°C U nless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS -30 - - V VGS (th) -1.0 - -3.0 V Gate-Source Leakage Current +20V VDS=0V, VGS=- IGSS - - ±100 nA Zero Gate Voltage Drain Current VDS=-30V, VGS=0V VDS=-24V, VGS=0V IDSS - - -1 -5 μA Drain-Source On-Resistance VGS=-10V, ID=-8A VGS=-4.5V, ID=-5A R DS (on) - - 20 35 mΩ Forward Transconductance VDS=-10V , ID=-8A gfs - 20 - S Ciss - 2800 - Coss - 1400 - Crss - 350 - Turn-On Delay Time(2) VDS = -15V, ID = -1A, VGS = -10V, RG = 6Ω, RD = 15Ω td(on) - 30 - nS Rise Time VDS = -15V, ID = -1A, VGS = -10V, RG = 6Ω, RD = 15Ω tr - 20 - nS - 120 - nS Characteristic Static Drain-Source Breakdown Voltage VGS=0V, ID=-250 uA Gate-Source Threshold Voltage VDS=VGS, ID=-250 uA Dynamic Input Capacitance VDS=-15V, VGS=0V, f=1MHZ Output Capacitance VDS=-15V, VGS=0V, f=1MHZ Reverse Transfer Capacitance VDS=-15V, VGS=0V, f=1MHZ PF Switching Turn-O Time VDS = -15V, ID = -1A, VGS = -10V, RG = 6Ω, RD = 15Ω t ) Fall Time VDS = -15V, ID = -1A, VGS = -10V, RG = 6Ω, RD = 15Ω tf - 80 - nS Total Gate Charge(2) VDS=-15V, ID=-4.6A, V GS =-10V Qg - 47 - nc Qgs - 9.5 - nc Qgd - 8 - nc Drain-Source Diode Forward Voltage(2) VGS=0V, IS=-2.1A VSD - -0.75 -1.2 V Continuous Source Current(Body Diode) VD=VG=0V, VS=-1.2V IS - - -2.1 A ISM - - -50 A Gate-Source Charge VDS=-15V, ID=-4.6A, V GS =-10V Gate-Drain Charge VDS=-15V, ID=-4.6A, V GS =-10V Pulsed Source Current(Body Diode)(1) Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width ≤ 300us, duty cycle ≤ 2%. WEITRON http://www.weitron.com.tw 2/6 03-May-07 WEITRON WTK4435 WEITRON http://www.weitron.com.tw 3/6 03-May-07 WEITRON WTK4435 WEITRON http://www.weitron.com.tw 4/6 03-May-07 WEITRON WTK4435 WEITRON http://www.weitron.com.tw 5/6 03-May-07 WTK4435 SOP-8 Package Outline Dimensions Unit:mm 1 θ L E1 D 7(4X) e B A1 2A A C 7 (4X) eB SYMBOLS A A1 B C D E1 eB e L θ WEITRON http://www.weitron.com.tw MILLIMETERS MAX MIN 1.75 1.35 0.20 0.10 0.45 0.35 0.18 0.23 4.69 4.98 3.56 4.06 5.70 6.30 1.27 BSC 0.60 0.80 0˚ 8˚ 6/6 03-May-07