Composite Transistors XP04215 (XP4215) Silicon NPN epitaxial planar type 0.2±0.05 6 Unit: mm (0.425) For switching/digital circuits 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half 0.2±0.1 1.25±0.10 2.1±0.1 ■ Features 1 3 2 (0.65) (0.65) 1.3±0.1 2.0±0.1 ■ Basic Part Number 0.9±0.1 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V Collector current IC 100 mA Total power dissipation PT 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) EIAJ : SC-88 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.9+0.2 –0.1 10˚ • UNR2215 (UN2215) × 2 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SMini6-G1 Package Marking Symbol: 8T Internal Connection 6 5 Tr1 1 ■ Electrical Characteristics Ta = 25°C ± 3°C 2 Symbol VCBO IC = 10 µA, IE = 0 50 Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.01 mA hFE VCE = 10 V, IC = 5 mA 460 0.25 V VCE(sat) VOH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ Output voltage low-level VOL VCC = 5 V, VB = 2.5 V, RL = 1 kΩ R1 Transition frequency fT Unit V 0.1 160 4.9 µA V 0.2 −30% VCB = 10 V, IE = −2 mA, f = 200 MHz Max V IC = 10 mA, IB = 0.3 mA Output voltage high-level Input resistance Typ 3 Parameter Collector-emitter saturation voltage Min Tr2 Collector-base voltage (Emitter open) Forward current transfer ratio Conditions 4 10 150 +30% V kΩ MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Note) The part number in the parenthesis shows conventional part number. Publication date: February 2004 SJJ00172BED 1 XP04215 IC VCE Collector current IC (mA) 100 0.7 mA 0.6 mA 0.5 mA 0.4 mA 80 0.3 mA 0.2 mA 40 50 0.1 mA 0 40 80 120 0 160 0 VCE = 10 V 300 Ta = 75°C 200 25°C −25°C 100 10 6 8 100 1 000 6 5 Input voltage VIN (V) Ta = 75°C 25°C 0.1 −25°C 0.01 0.1 1 3 2 100 VO = 5 V Ta = 25°C 103 102 10 1 0 0.1 1 10 VO = 0.2 V Ta = 25°C 10 1 10 10 104 4 0.1 100 Output current IO (mA) 2 1 Collector current IC (mA) f = 1 MHz IE = 0 Ta = 25°C VIN IO 100 1 12 10 IO VIN Collector-base voltage VCB (V) Collector current IC (mA) 0.01 0.1 10 IC / IB = 10 Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob hFE IC 1 4 100 Collector-emitter voltage VCE (V) 400 0 2 Output current IO (µA) Total power dissipation PT (mW) 150 120 Ambient temperature Ta (°C) Forward current transfer ratio hFE Ta = 25°C IB = 1.0 mA 0.9 mA 0.8 mA 200 0 VCE(sat) IC 160 Collector-emitter saturation voltage VCE(sat) (V) PT Ta 250 SJJ00172BED 100 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) 1.4 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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