ZARLINK ZL10100/LDF1

ZL10100
Single Chip Synthesized
Downconverter with IF Amplifier
Data Sheet
Features
•
April 2005
Single chip synthesised downconverter forming a
complete double conversion tuner when
combined with the SL2100 or SL2101
•
Compatible with digital and analogue system
requirements
•
CTB contribution < -64 dBc, CXM contribution
< -62 dBc and spectral spread < -64 dBc
•
IF amplifier optimized to interface with standard
SAW filters
•
Extremely low phase noise balanced local
oscillator, with very low fundamental and
harmonic radiation
•
PLL frequency synthesizer designed for high
comparison frequencies and low phase noise
•
Available in 28 pin SSOP and MLP packages
Ordering Information
ZL10100/DDE
ZL10100/DDF
ZL10100/DDE1
ZL10100/DDF1
ZL10100/LDG1
ZL10100/LDF1
Double conversion tuners
•
Digital Terrestrial tuners
•
Cable Modems
•
Cable telephony
•
MATV
All codes Baked an Drypacked
-40°C to +85°C
Description
The ZL10100 is a fully integrated single chip mixer
oscillator with on-board low phase noise I2C bus
controlled PLL frequency synthesizer. It is intended
primarily as the down converter for application in
double conversion tuners and is compatible with HIIF
frequencies between 1 and 1.3 GHz and all standard
tuner IF output frequencies.
The device contains all elements necessary, with the
exception of local oscillator tuning network, loop filter
and crystal reference to fabricate a complete
synthesized block converter with IF amplifier,
compatible with digital and analogue requirements.
RF Input
IF Output
RF InputB
LO
LOB
IF OutputB
VCO
Pump
15 Bit
Programmable
Divider
SDA
SCL
ADD
XTAL
XTALCAP
Tubes
Tape & Reel,
Tubes
Tape & Reel
Trays
Tape & Reel
* Pb free
Applications
•
SSOP
SSOP
SSOP*
SSOP*
MLP*
MLP*
Charge
Pump
Drive
fpd/
2
I2C Bus
Interface
Fpd/2
REF
OSC
Reference Divider
Fcomp
Figure 1 - ZL10100 Functional Block Diagram
1
Zarlink Semiconductor Inc.
Zarlink, ZL and the Zarlink Semiconductor logo are trademarks of Zarlink Semiconductor Inc.
Copyright 2002-2005, Zarlink Semiconductor Inc. All Rights Reserved.
Port P0
ZL10100
Data Sheet
Pin Description
IFOUTPUTB
Vee
VccRF
Vee
RFINPUTB
RFINPUT
Vee
Vee
VccD
Vee
SCL
SDA
XTAL
XTAL CAP
IFOUTPUT
Vee
VccIF
Vee
VccLO
LO
LOB
VccLO
Vee
ADD
Vee
Port P0
DRIVE
PUMP
28
27
26
25
24
23
22
21
20
19
18
17
16
15
1
2
3
4
5
6
7
8
9
10
11
12
13
14
nc
1
RFINPUTB
3
RFINPUT
VccIF
Vee
IFOUTPUT
nc
IFOUTPUTB
28 27 26 25 24 23 22
21
2
nc
Vee
VccRF
Figure 2 - Pin Description SSOP Package
Pin 1 Ident
nc
20
VccLO
19
LO
6
16
SCL
7
15
9 10 11 12 13 14
ADD
nc
Port P0
SDA
Vee to pad
under package
8
DRIVE
VccD
PUMP
VccLO
Vee
LOB
17
XTAL CAP
18
5
XTAL
4
nc
Figure 3 - Pin Description MLP Package
2
Zarlink Semiconductor Inc.
ZL10100
Data Sheet
Quick Reference Data
All data applies with the following conditions unless otherwise stated;
a)
Output load of 150 Ω, differential
b)
Input spectrum of 5 channels centred on 1220 MHz, each carrier @ 77 dBµV
Characteristic
Units
RF input operating range
1-1.3
GHz
IF output operating range
30-60
MHz
Input noise figure, SSB
9
dB
Conversion gain, diff to diff
24
dB
CTB
< −66
dBc
CXM
< −63
dBc
Spectral spread
< −70
dBc
Local oscillator phase noise
SSB @ 10 kHz offset
SSB @ 100 kHz offset
c -93
c-115
dBc/Hz
dBc/Hz
Local oscillator phase noise floor
-136
dBc/Hz
IF output impedance, differential
150
Ω
PLL phase noise at phase detector, 1 MHz comparison
frequency
-152
dBc/Hz
3
Zarlink Semiconductor Inc.
ZL10100
1.0
Data Sheet
Functional Description
The ZL10100 is a bipolar, broadband wide dynamic range mixer oscillator with on-board I2C bus controlled PLL
frequency synthesizer, optimized for application as the down converter in double conversion tuner systems. It also
has application in any system where a wide dynamic range broadband synthesized frequency converter is required.
The ZL10100 is a single chip solution containing all necessary active circuitry and simply requires an external
tuneable resonant network for the local oscillator sustaining network. The pin assignment is contained in the block
diagram in Figure 1 and the Pin Description in Figure 2.
1.1
Converter Section
In normal application the HIIF input is interfaced through appropriate impedance matching to the device input. The
RF input preamplifier of the device is designed for low noise figure, within the operating region of 1 to 1.3 GHz and
for high intermodulation distortion intercept so offering good signal to noise plus composite distortion spurious
performance when loaded with a multi carrier system. The preamplifier also provides gain to the mixer section and
back isolation from the local oscillator section. The typical RF input impedance and matching network for matching
to a 1220 MHz HIIF filter, type B1603 are contained in Figures 3 and 4.
The output of the preamplifier is fed to the mixer section which is optimized for low radiation application. In this
stage the RF signal is mixed with the local oscillator frequency, which is generated by the on-board oscillator. The
oscillator block uses an external tuneable network and is optimized for low phase noise. The typical application is
shown in Figure 6, and the phase noise performance in Figure 7. This block interfaces direct with the internal PLL to
allow for frequency synthesis of the local oscillator.
The output of the mixer is internally coupled to a differential IF amplifier, which provides further gain and provides
for a 150 Ω, differential output impedance and drive capability. The IF amplifier allows for IF frequencies between
30 and 60 MHz.
The typical IF output impedance is contained in Figure 8.
The typical key performance data at 5 V Vcc and 25 deg C ambient are shown in the Quick Reference Data section
on Page 2.
1.2
Local Oscillator
To maximize the local oscillator phase noise performance, the application circuit as in Figure 5 must be carefully
adhered to including the component type and manufacture where applicable, strip line dimension and board
material. Any deviation from these parameters may adversely affect phase noise characteristics and so will require
re-optimization.
1.3
PLL frequency Synthesizer
The PLL frequency synthesizer section contains all the elements necessary, with the exception of a reference
frequency source and loop filter to control the oscillator, so forming a complete PLL frequency synthesized source.
The device allows for operation with a high comparison frequency and is fabricated in high speed logic, which
enables the generation of a loop with good phase noise performance.
The LO signal from the oscillator drives an internal preamplifier, which provides gain and reverse isolation from the
divider signals. The output of the preamplifier interfaces direct with the 15-bit fully programmable divider. The
programmable divider is of MN+A architecture, where the dual modulus prescaler is 16/17, the A counter is 4-bits,
and the M counter is 11 bits.
The output of the programmable divider is fed to the phase comparator where it is compared in both phase and
frequency domain with the comparison frequency. This frequency is derived either from the on-board crystal
controlled oscillator or from an external reference source. In both cases the reference frequency is divided down to
the comparison frequency by the reference divider which is programmable into 1 of 29 ratios as detailed in Table 1.
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Zarlink Semiconductor Inc.
ZL10100
Data Sheet
The typical application for the crystal oscillator is contained in Figure 9 which also demonstrates how a 4 MHz
reference signal can be coupled out to a further PLL frequency synthesizer, such as the upconverter section in a
double conversion tuner.
The output of the phase detector feeds a charge pump and loop amplifier, which when used with an external loop
filter and high voltage transistor, integrates the current pulses into the varactor line voltage, used for controlling the
oscillator.
The programmable divider output Fpd divided by two and the reference divider output Fcomp can be switched to
port P0 by programming the device into test mode. The test modes are described in Table 2.
2.0
Programming
The ZL10100 is controlled by an I2C data bus and is compatible with both standard and fast mode formats.
Data and Clock are fed in on the SDA and SCL lines respectively as defined by I2C bus format. The device can
either accept data (write mode), or send data (read mode). The LSB of the address byte (R/W) sets the device into
write mode if it is low, and read mode if it is high. Tables 3, 4 and 5 illustrate the format of the data. The device can
be programmed to respond to several addresses, which enables the use of more than one device in an I2C bus
system. Table 5 shows how the address is selected by applying a voltage to the 'ADD' input. When the device
receives a valid address byte, it pulls the SDA line low during the acknowledge period, and during following
acknowledge periods after further data bytes are received. When the device is programmed into read mode, the
controller accepting the data must pull the SDA line low during all status byte acknowledge periods to read another
status byte. If the controller fails to pull the SDA line low during this period, the device generates an internal STOP
condition, which inhibits further reading.
2.1
Write Mode
With reference to Table 5, bytes 2 and 3 contain frequency information bits 214-20 inclusive. Byte 4 controls the
synthesizer reference divider ratio, see Table 1 and the charge pump setting, see Table 6. Byte 5 controls the test
modes, see Table 2 and the output port P0.
After reception and acknowledgement of a correct address (byte 1), the first bit of the following byte determines
whether the byte is interpreted as a byte 2 or 4, a logic '0' indicating byte 2, and a logic '1' indicating byte 4. Having
interpreted this byte as either byte 2 or 4 the following data byte will be interpreted as byte 3 or 5 respectively.
Having received two complete data bytes, additional data bytes can be entered, where byte interpretation follows
the same procedure, without re-addressing the device. This procedure continues until a STOP condition is
received. The STOP condition can be generated after any data byte, if however it occurs during a byte
transmission, the previous byte data is retained. To facilitate smooth fine tuning, the frequency data bytes are only
accepted by the device after all 15 bits of frequency data have been received, or after the generation of a STOP
condition.
2.2
Read Mode
When the device is in read mode, the status byte read from the device takes the form shown in Table 4.
Bit 1 (POR) is the power-on reset indicator, and this is set to a logic '1' if the Vcc supply to the device has dropped
below 3 V (at 25°C), e.g., when the device is initially turned ON. The POR is reset to '0' when the read sequence is
terminated by a STOP command. When POR is set high this indicates that the programmed information may have
been corrupted and the device reset to the power up condition.
Bit 2 (FL) indicates whether the synthesizer is phase locked, a logic '1' is present if the device is locked, and a logic
'0' if the device is unlocked.
5
Zarlink Semiconductor Inc.
ZL10100
Programmable Features
Synthesizer programmable divider
Reference programmable divider
Charge pump current
Function as described above.
Function as described above.
The charge pump current can be programmed by bits C1 and
C0 within data byte 4, as defined in Table 6.
The test modes are defined by bits T2-T0 as described in
Table 2.
The general purpose port can be programmed by bits P0;
Logic ’1’ = on
Logic ’0’ = off (high impedance)
Test mode
General purpose ports, P0
CH1
S 11
Data Sheet
1 U FS
26 Jun 2002 14:18:23
-74.777
2.1284 pF
1_: 33.309
B1 4.7V
1 000.000 000 MHz
PRm
Cor
2_: 29.262
-66.289
1.1 GHz
Z0
50
Avg
16
Smo
3_: 24.57
-58.744
1.22 GHz
4_: 22.332
-54.303
1.3 GHz
1
4 3
START 1 000.000 000 MHz
2
STOP 1 300.000 000 MHz
Figure 4 - Typical RF Input Impedance
6
5
2.7 pF
B1603
8.2 nH
ZL10100
2.7 pF
5
6
Figure 5 - RF Input Impedance Matching Network to B1603 HIIF Filter
6
Zarlink Semiconductor Inc.
ZL10100
Data Sheet
2.5 pF
23
1 kΩ
Varactor
line
4.3 nH
22
BB555
Phase noise (@ 10KHz offset),
dBc
Figure 6 - Oscillator Application
-80
-85
-90
-95
-100
-105
-110
1010
1060
1110
1160
1210
LO Frequency (MHz)
Figure 7 - Typical Phase Noise Performance with Application as in Figure 6
7
Zarlink Semiconductor Inc.
ZL10100
CH1
S 11
1 U FS
Data Sheet
25 Jun 2002 06:58:03
-5.6172
944.45 pF
1_: 76.695
30.000 000 MHz
B1 PIN1 4.7V
PRm
Cor
Avg
16
Smo
2_: 75.914
-7.2539
44 MHz
Z0
75
3_: 75.391
-7.9023
50 MHz
4_: 74.152
-9.207
60 MHz
1
432
START 30.000 000 MHz
STOP 60.000 000 MHz
Figure 8 - Typical IF Output Impedance Single-Ended
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Zarlink Semiconductor Inc.
ZL10100
R4
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Data Sheet
R3
R2
R1
R0
Ratio
0
0
0
0
2
0
0
0
1
4
0
0
1
0
8
0
0
1
1
16
0
1
0
0
32
0
1
0
1
64
0
1
1
0
128
0
1
1
1
256
1
0
0
0
Illegal state
1
0
0
1
5
1
0
1
0
10
1
0
1
1
20
1
1
0
0
40
1
1
0
1
80
1
1
1
0
160
1
1
1
1
320
0
0
0
0
Illegal state
0
0
0
1
6
0
0
1
0
12
0
0
1
1
24
0
1
0
0
48
0
1
0
1
96
0
1
1
0
192
0
1
1
1
384
1
0
0
0
Illegal state
1
0
0
1
7
1
0
1
0
14
1
0
1
1
28
1
1
0
0
56
1
1
0
1
112
1
1
1
0
224
1
1
1
1
448
Table 1 - Reference Division Ratios
XTALCAP
47 pF
XTAL
47 pF
4 MHz
10 pF
Reference
frequency
output
Figure 9 - Crystal Oscillator Application
9
Zarlink Semiconductor Inc.
ZL10100
T2
0
0
T1
0
0
0
1
0
1
1
1
0
0
1
1
1
1
Data Sheet
T0
0
1
Test Mode Description
Normal operation
Charge pump sink*
Status byte FL set to logic ’0’
0
Charge pump source*
Status byte FL set to logic ’0’
1
Charge pump disabled*
Status byte FL set to logic ’1’
0
Normal operation and Port P0 = Fpd/2
0
Charge pump sink*
Status byte FL set to logic ’0’
Port P0 = Fcomp
0
Charge pump source*
Status byte FL set to logic ’0’
Port P0 = Fcomp
1
Charge pump disabled*
Status byte FL set to logic ’1’
Port P0 = Fcomp
Table 2 - Test Modes
* clocks need to be present on crystal and local oscillator to enable
charge pump test modes and to toggle status byte bit FL
Address
Programmable divider
Programmable divider
Control data
Control data
MSB
1
1
0
214
26
27
1
C1
T2
T1
Table 3 - Write Data
LSB
MA1 MA0
0
210
29
28
22
21
20
R2
R1
R0
X
0
P0
Transmitted First)
A
A
A
A
A
Byte 1
Byte 2
Byte 3
Byte 4
Byte 5
Address
Status Byte
MSB
LSB
1
1
0
0
0
MA1 MA0
1
POR
FL
0
0
0
0
0
0
Table 4 - Read Data Format (MSB is Transmitted First)
A
A
Byte 1
Byte 2
A
:
MA1,MA0 :
Acknowledge bit
Variable address bits (see Table 5)
214-20
C1-C0
R4-R0
T2-T0
P0
POR
FL
X
Programmable division ratio control bits
Charge pump current select (see Table 6)
Reference division ratio select (see Table 1)
Test mode control bits (see Table 2)
P0 port output state
Power on reset indicator
Phase lock flag
'Don't care'
:
:
:
:
:
:
:
:
MA1
0
0
1
1
MA0
0
1
0
1
0
0
0
213
212 211
25
24
23
C0
R4 R3
T0
X
X
Format (MSB is
Address Input Voltage Level
0-0.1 Vcc
Open circuit
0.4Vcc - 0.6 Vcc #
0.9 Vcc - Vcc
Table 5 - Address Selection
# Programmed by connecting a 30 kΩ resistor between pin and Vcc
10
Zarlink Semiconductor Inc.
ZL10100
C1
0
0
1
1
Data Sheet
Current in µA
C0
0
1
0
1
Table 6
Min.
Typ.
Max.
± 98
± 130
± 162
± 210
± 280
± 350
± 450
± 600
± 750
± 975
± 1300
± 1625
- Charge Pump Current
Electrical Characteristics - Test conditions (unless otherwise stated)
Tamb = -40°C to 85°C, Vee = 0 V, Vcc = 5 V±5%. Input frequency 1220 MHz. IF output frequency 44 MHz.
These characteristics are guaranteed by either production test or design. They apply within the specified ambient temperature and supply
voltage unless otherwise stated.
Characteristic
Pin
Min.
Supply current
Input frequency range
Typ.
Max.
Units
120
160
mA
1.3
GHz
1
Composite peak input signal
dBµV
86
Input impedance
Conditions
Operating condition only.
See Figure 4.
Input Noise Figure
9
11
dB
Tamb = 27°C
23
26
dB
Differential to differential
voltage gain to differential
150 Ω load.
Gain variation within channel
0.5
dB
Channel bandwidth 8 MHz
within operating frequency
range.
Through gain
-30
dB
CTB
-64
dBc
See note 4.
CXM
-62
dBc
See note 4.
1.6
GHz
Maximum tuning range
determined by application,
see note (3), guaranteed by
design.
Conversion gain
LO operating range
20
0.9
LO phase noise, SSB
@ 10 kHz offset
@ 100 kHz offset
-94
-116
LO phase noise floor
IF output frequency range
30
-90
-110
See Figure 7.
dBc/Hz Application as in Figure 6.
dBc/Hz
-136
dBc/Hz Application as in Figure 6.
60
IF output impedance
75
MHz
Ω
Single-ended. See Figure 8.
IF output return loss
-20
dB
See Figure 8, over operating
range.
All other spurs on IF Output
20
dBµV
Within channel bandwidth of
8 MHz.
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Zarlink Semiconductor Inc.
ZL10100
Data Sheet
Electrical Characteristics - Test conditions (unless otherwise stated)
Tamb = -40°C to 85°C, Vee = 0 V, Vcc = 5 V±5%. Input frequency 1220 MHz. IF output frequency 44 MHz.
These characteristics are guaranteed by either production test or design. They apply within the specified ambient temperature and supply
voltage unless otherwise stated.
Characteristic
Pin
Min.
Typ.
Max.
Units
5.5
1.5
10
V
V
µA
µA
µA
V
Conditions
SYNTHESIZER
SDA, SCL
Input high voltage
Input low voltage
Input high current
Input low current
Leakage current
Hysterysis
3
0
-10
0.4
10
I2C ’Fast mode’ compliant
Input voltage = Vcc
Input voltage = Vee
Vcc = Vee
SDA output voltage
0.4
0.6
V
V
SCL clock rate
400
kHz
±10
nA
See Table 6.
Vpin = 2 V
mA
Vpin = 0.7 V
See Figure 9 for application.
Charge pump output current
Charge pump drive output current
±3
0.5
Isink = 3 mA
Isink = 6 mA
Crystal frequency
2
20
MHz
Recommended crystal series
resistance
10
200
Ω
External reference input frequency
2
20
MHz
Sinewave coupled through
10 nF blocking capacitor
0.2
0.5
Vpp
Sinewave coupled through
10 nF blocking capacitor
4
MHz
External reference drive level
Phase detector comparison
frequency
Equivalent phase noise at phase
detector
Local oscillator programmable divider
division ratio
SSB, within loop bandwidth
dBc/Hz 2 MHz
dBc/Hz 250 kHz
-152
-158
240
32767
Reference division ratio
Output port
sink current
leakage current
4 MHz parallel resonant
crystal
See Table 1.
2
Address select
Input high current
Input low current
10
mA
µA
See note 2.
Vport = 0.7
Vport = Vcc
1
-0.5
mA
mA
See Table 5
Vin = Vcc
Vin = Vee
Notes
(1) When measuring from a 50 Ω environment, the voltage step up transformation needs to be taken into account.
(2) Port powers up in high impedance state.
(3) To maximize phase noise the tuning range should be minimised and Q of resonator maximized. The application as in Figure 6 has a
tuning range of 200 MHz.
(4) Measured with 5 channels @ 77 dBuV centred on desired channel.
12
Zarlink Semiconductor Inc.
ZL10100
Data Sheet
Absolute Maximum Ratings - All voltages are referred to Vee at 0 V.
Characteristic
Min.
Max.
Units
Supply voltage
-0.3
7
V
117
dBuV
RF input voltage
All I/O port DC offsets
-0.3
Vcc+0.3
V
SDA, SCL DC offsets
-0.3
6
V
Storage temperature
-55
150
°C
Junction temperature
150
°C
Package thermal resistance, chip to case
20
°C/W
Package thermal resistance, chip to case
80
°C/W
Power consumption at 5.25 V
700
mW
ESD protection
3.5
kV
13
Zarlink Semiconductor Inc.
Conditions
Differential
Vcc = Vee to 5.25 V
Mil-std 883B method 3015 cat1
ZL10100
Data Sheet
vcc
5
RFINPUTB
XTAL
RFINPUT
XTALCAP
6
13
14
200 µA
Reference Oscillator
RF Inputs
VREF
500 K
500 K
LO
VCC
500 K
23
SCL/SDA
LOB
*
22
ACK
*On SDA only
SDA/SCL (pins 12 and 11)
Oscillator Inputs
VCC
75 Ω
75 Ω
IF Output
IF OutputB
PO
28
17
1
Output Port
IF Outputs
Figure 10 - Input and Output Interface Circuits
14
Zarlink Semiconductor Inc.
ZL10100
Data Sheet
vcc
15
vcc
Pump
120 K
ADD
220
16
19
40 K
Drive
ADD Input
Loop Amplifier
Figure 10 - Input and Output Interface Circuits
15
Zarlink Semiconductor Inc.
ZL10100
Figure 11 - ZL10100 Evaluation Board Schematic
16
Zarlink Semiconductor Inc.
Data Sheet
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TECHNICAL DOCUMENTATION - NOT FOR RESALE