NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ZTX656 ZTX657 ISSUE 2 JULY 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt TYPICAL CHARACTERISTICS 1.8 100 hFE - Normalised Gain (%) 1.6 VCE(sat) - (Volts) 1.4 1.2 IC/IB=10 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 80 40 0 1 10 IC - Collector Current (Amps) hFE v IC VCE(sat) v IC 1.2 IC/IB=10 VCE=5V 1.0 VBE - (Volts) VBE(sat) - (Volts) 0.1 0.8 0.6 0.4 0.01 0.1 1 Switching time 5 V 1 A Continuous Collector Current IC Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg ZTX656 Collector Cut-Off Current ICBO 100 Emitter Cut-Off Current IEBO Collector-Emitter Saturation Voltage 0.1 1 10 IB1=IB2=IC/10 VCE=10V ts µs ts 3 1.0 2 0.8 tf 0.6 1 0.4 td tr 0 0.1 1000 IC - Collector Current (Amps) Switching Speeds 3-228 VEBO ICM V(BR)EBO 0 0.01 Safe Operating Area Emitter-Base Voltage Peak Pulse Current Emitter-Base Breakdown Voltage 0.2 100 V V(BR)CEO ZTX656 10 300 Collector-Emitter Breakdown Voltage 0.01 1.4 VCE - Collector Voltage (Volts) 200 200 1.2 1 VCEO V(BR)CBO VBE(on) v IC 0.001 V Collector-Emitter Voltage Collector-Base Breakdown Voltage IC - Collector Current (Amps) ZTX657 UNIT 300 0.6 td tr tf µs 0.01 ZTX657 200 SYMBOL VBE(sat) v IC D.C. 1s 100ms 10ms 1.0ms 300µs ZTX656 VCBO PARAMETER IC - Collector Current (Amps) 0.1 SYMBOL Collector-Base Voltage 0.8 Single Pulse Test at Tamb=25°C 1 PARAMETER 0.5 A 1 W -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 1.0 0.4 10 E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. 20 IC - Collector Current (Amps) IC - Collector Current (Amps) C B VCE=5V 60 0.01 1.2 ZTX656 ZTX657 1 ZTX657 UNIT CONDITIONS. 300 V IC=100µ A, IE=0 200 300 V IC=10mA, IB=0* 5 5 V IE=100µ A, IC=0 100 nA nA VCB=160V, IE=0 VCB=200V, IE=0 100 100 nA VEB=3V, IC=0 VCE(sat) 0.5 0.5 V IC=100mA, IB=10mA* Base-Emitter Saturation Voltage VBE(sat) 1 1 V IC=100mA, IB=10mA* Base-Emitter Turn-On Voltage VBE(on) 1 1 V IC=100mA, VCE=5V* Static Forward Current Transfer Ratio hFE 50 40 50 40 Transition Frequency fT 30 30 MIN. MAX. MIN. 3-227 MAX. IC=100mA, VCE=5V IC=10mA, VCE=5V MHz IC=10mA, VCE=20V f=20MHz NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ZTX656 ZTX657 ISSUE 2 JULY 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt TYPICAL CHARACTERISTICS 1.8 100 hFE - Normalised Gain (%) 1.6 VCE(sat) - (Volts) 1.4 1.2 IC/IB=10 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 80 40 0 1 10 IC - Collector Current (Amps) hFE v IC VCE(sat) v IC 1.2 IC/IB=10 VCE=5V 1.0 VBE - (Volts) VBE(sat) - (Volts) 0.1 0.8 0.6 0.4 0.01 0.1 1 Switching time 5 V 1 A Continuous Collector Current IC Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg ZTX656 Collector Cut-Off Current ICBO 100 Emitter Cut-Off Current IEBO Collector-Emitter Saturation Voltage 0.1 1 10 IB1=IB2=IC/10 VCE=10V ts µs ts 3 1.0 2 0.8 tf 0.6 1 0.4 td tr 0 0.1 1000 IC - Collector Current (Amps) Switching Speeds 3-228 VEBO ICM V(BR)EBO 0 0.01 Safe Operating Area Emitter-Base Voltage Peak Pulse Current Emitter-Base Breakdown Voltage 0.2 100 V V(BR)CEO ZTX656 10 300 Collector-Emitter Breakdown Voltage 0.01 1.4 VCE - Collector Voltage (Volts) 200 200 1.2 1 VCEO V(BR)CBO VBE(on) v IC 0.001 V Collector-Emitter Voltage Collector-Base Breakdown Voltage IC - Collector Current (Amps) ZTX657 UNIT 300 0.6 td tr tf µs 0.01 ZTX657 200 SYMBOL VBE(sat) v IC D.C. 1s 100ms 10ms 1.0ms 300µs ZTX656 VCBO PARAMETER IC - Collector Current (Amps) 0.1 SYMBOL Collector-Base Voltage 0.8 Single Pulse Test at Tamb=25°C 1 PARAMETER 0.5 A 1 W -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 1.0 0.4 10 E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. 20 IC - Collector Current (Amps) IC - Collector Current (Amps) C B VCE=5V 60 0.01 1.2 ZTX656 ZTX657 1 ZTX657 UNIT CONDITIONS. 300 V IC=100µ A, IE=0 200 300 V IC=10mA, IB=0* 5 5 V IE=100µ A, IC=0 100 nA nA VCB=160V, IE=0 VCB=200V, IE=0 100 100 nA VEB=3V, IC=0 VCE(sat) 0.5 0.5 V IC=100mA, IB=10mA* Base-Emitter Saturation Voltage VBE(sat) 1 1 V IC=100mA, IB=10mA* Base-Emitter Turn-On Voltage VBE(on) 1 1 V IC=100mA, VCE=5V* Static Forward Current Transfer Ratio hFE 50 40 50 40 Transition Frequency fT 30 30 MIN. MAX. MIN. 3-227 MAX. IC=100mA, VCE=5V IC=10mA, VCE=5V MHz IC=10mA, VCE=20V f=20MHz