4PT Series SEMICONDUCTOR RoHS RoHS Sensitive gate SCRs, 4A Main Features 2 Symbol Value Unit I T(RMS) 4 A 2 1 V DRM /V RRM I GT 1 V 600 to 800 10 to 2 00 2 3 3 TO-251 (I-PAK) (4PTxxF) µA 2 TO-252 (D-PAK) (4PTxxG) 2 DESCRIPTION Thanks to highly sensitive triggering levels, the 4PT series is suitable for all applications where the available gate current is limited, such as motor control for hand tools, kitchen aids, capacitive discharge ignitions, overvoltage crowbar protection for low power supplies among others. Available in through-hole or surface-mount packages, they provide an optimized performance in a limited space area. 1 2 1 3 TO-220AB (Non-lnsulated) 2 3 TO-220AB (lnsulated) (4PTxxAI) (4PTxxA) 2 (A2) (G)3 1(A1) ABSOLUTE MAXIMUM RATINGS PARAMETER RMS on-state current full sine wave (180° conduction angle ) IT(RMS) Average on-state current (180° conduction angle) IT(AV) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) ITSM I2t Value for fusing TEST CONDITIONS SYMBOL TO-251/TO-252/TO-220AB Tc=115°C TO-220AB insulated Tc=110°C TO-251/TO-252/TO-220AB Tc=115°C TO-220AB insulated Tc=110°C VALUE UNIT 4 A 2.5 A F =50 Hz t = 20 ms 30 F =60 Hz t = 16.7 ms 33 t p = 10 ms I2t A 4.5 A2s Critical rate of rise of on-state current IG = 2xlGT, tr≤100ns dI/dt F = 60 Hz T j = 125ºC 50 A/µs Peak gate current IGM T p = 20 µs T j = 125ºC 1.2 A Average gate power dissipation PG(AV) T j =125ºC 0.2 W Repetitive peak off-state voltage VDRM V VRRM T j =125ºC 600 and 800 Repetitive peak reverse voltage Storage temperature range Operating junction temperature range Tstg - 40 to + 150 Tj - 40 to + 125 ºC www.nellsemi.com Page 1 of 6 4PT Series SEMICONDUCTOR ELECTRICAL SPECIFICATIONS SYMBOL (TJ = 25 ºC unless otherwise specified) 4PTxxxx TEST CONDITIONS IGT V D = 12V, R L = 30Ω VGT V D = V DRM , R L = 3.3KΩ VGD RoHS RoHS R GK = 220Ω, T j = 125°C Unit 10 Min. Max. Max. 200 0.8 V Min. 0.1 V µA IH I T = 50mA, R GK = 1KΩ Max. 5 mA IL I G = 1mA, R GK = 1KΩ Min. 6 mA V D = 67% V DRM , R GK = 1KΩ , T j = 125°C Min. 10 V/µs dV/dt VTM I T = 8A, t P = 380 µs T j = 25°C Max. 1.6 V IDRM V D =V DRM , V R =V RRM T j = 25°C Max. 5 µA IRRM R GK = 220Ω T j = 125°C Max. 0.5 mA THERMAL RESISTANCE Rth(j-c) Junction to case (DC) S = 0.5 cm 2 Rth(j-a) VALUE UNIT IPAK/DPAK/TO-220AB 2.8 °C/W TO-252(D-PAK) 70 TO-220AB 60 Parameter SYMBOL Junction to ambient TO-251(I-PAK) °C/W 100 PRODUCT SELECTOR VOLTAGE (x x) PART NUMBER SENSITIVITY PACKAGE 1000 V 600 V 800 V 4PTxxA-S/4PTxxAl-S V V V 70~200 µA TO-220AB 4PTxxA-03/4PTxxAl-03 V V V 10~30 µA TO-220AB 4PTxxA-05/4PTxxAl-05 V V V 20~30 µA TO-220AB 4PTxxA-06/4PTxxAl-06 V V V 30~60 µA TO-220AB 4PTxxA-08/4PTxxAl-08 V V V 50~80 µA TO-220AB 4PTxxF-S V V V 70~200 µA I-PAK 4PTxxF-03 V V V 10~30 µA I-PAK 4PTxxF-05 V V V 20~30 µA I-PAK 4PTxxF-06 V V V 30~60 µA I-PAK 4PTxxF-08 V V V 50~80 µA I-PAK 4PTxxG-S V V V 70~200 µA D-PAK 4PTxxG-03 V V V 10~30 µA D-PAK 4PTxxG-05 V V 20~30 µA D-PAK 4PTxxG-06 V V V 30~60 µA D-PAK 4PTxxG-08 V V V 50~80 µA D-PAK www.nellsemi.com Page 2 of 6 V 4PT Series SEMICONDUCTOR RoHS RoHS ORDERING INFORMATION ORDERING TYPE MARKING PACKAGE WEIGHT , BASE Q TY DELIVERY MODE 4PTxxA-yy 4PTxxA-yy TO-220AB 2.0g 50 Tube 4PTxxAI-yy 4PTxxAI-yy TO-220AB (insulated) 2.3g 50 Tube 4PTxxF-yy 4PTxxF-yy TO-251(I-PAK) 0.40g 80 Tube 4PTxxG-yy 4PTxxG-yy TO-252(D-PAK) 0.38g 80 Tube Note: xx = voltage, yy = sensitivity ORDERING INFORMATION SCHEME - S 4 PT 06 Current 4 = 4A, IT(RMS) SCR series Voltage Code 06 = 600V 08 = 800V Package type A = TO-220AB (non-insulated) AI = TO-220AB ( insulated) F = TO-251 (I-PAK) G = TO-252 (D-PAK) IGT Sensitivity 03 = 10~30 µA 05 = 20~50 µA 06 = 30~60 µA 08 = 50~80 µA S = 70~200 µA Fig.1 Maximum average power dissipation versus on-state current P(W) 5.0 4.0 3.5 Fig.2 Average and DC on-state current versus case temperature I T(AV) (A) 4.5 4.0 α=180° 3.0 DC 3.5 2.5 TO-220AB Insulated 3.0 α=180° 2.5 2.0 2.0 1.5 1.0 0.5 0.0 0.5 1.0 www.nellsemi.com 1.5 1.0 0.5 0.0 α I T(AV) (A) 0.0 2.0 2.5 TO-251/TO-252 TO-220AB 1.5 360° 3.0 T case (°C) 0 Page 3 of 6 25 50 75 100 125 Fig.4 Relative variation of thermal impedance junction to ambient versus pulse duration (DPAK) K=[Zth(j-c)/Rth(j-c)] Fig.3 Average and DC on-state current versus ambient temperature (DPAK) I T (AV)(A) 2.0 1E+0 Device mounted on FR4 with recommended pad layout 1.8 1.6 1.4 1.2 RoHS RoHS 4PT Series SEMICONDUCTOR DC Z th(j-c) DPAK (S = 0.5 cm ²) α=180° 1E-1 Z th(j-a) 1.0 0.8 IPAK 0.6 0.4 1E-2 DC α=180° 0.2 0.0 T amb (°C) 0 50 25 75 100 125 Fig.5 Relative variation of gate trigger current and holding current versus junction temperature 2.0 1.8 1.6 1.4 t p (s) 1E-3 1E-3 1E+0 1E-1 1E-2 Device mounted on FR4 with recommended pad layout 1E+1 1E+2 5E+2 Fig.6 Relative variation of holding current versus gate-cathode resistance (typical values) I H [R GK ] / I H [R GK =1KΩ IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25 C] 5 Tj=25 ° C 4 I GT 1.2 1.0 3 l hand IL R GK =1K Ω 0.8 0.6 2 0.4 0.2 0.0 -40 T j (°C) 1 R GK (KΩ) -20 0 20 40 60 80 100 120 0 1E-2 140 1E+1 Fig.8 Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values) Fig.7 Relative variation of dV/dt immunity versus gate-cathode resistance (typical values) 10.00 1E+0 1E-1 dV/dt[R GK ] / dV/dt[R GK =220Ω] 10 Tj=125 C V D =0.67 X V DRM dV/dt[C GK ] / dV/dt[R GK =220Ω] V D =0.67 X V DRM T j =125 ° C R GK =220Ω 8 1.00 6 4 0.10 2 R GK (KΩ) 0.01 0 200 400 600 800 1000 1200 1400 1600 1800 2000 www.nellsemi.com C GK (nF) 0 0 Page 4 of 6 2 4 6 8 10 12 14 16 18 20 22 Fig.10 Non-repetitive surge peak on-state current, and corresponding values of l²t Fig.9 Surge peak on-state current versus number of ctcles I TSM (A),I²t(A²s) I TSM (A) 35 RoHS RoHS 4PT Series SEMICONDUCTOR 300 Tj inital=25 ° C dI/dt Iimitation 30 100 tp=10ms 25 I TSM One cycle 20 Non repetitive Tj inital=25°C 15 10 I²t Repetitive Tc=115°C 10 Sinusoidal pulse with width < 10ms 5 Number of cycles 0 10 1 0.01 Fig.11 On-state characteristics (maximum values) 50.0 t p (ms) 1 1000 100 0.10 1.00 10.00 Fig.12 Thermal resistance junction to ambient versus copper surface under tab (DPAK) R th (j-a)( ° C/W) I TM (A) 100 Tjmax V t0 =0.85V Rd=90mΩ Epoxy printed circuit board FR4 copper thickness = 35µm 80 10.0 60 Tj=max 1.0 RoHS 40 Tj=25 ° C 20 S(cm²) V TM (V) 0 0.1 0 0.0 0.5 1.0 1.5 www.nellsemi.com 2.0 2.5 3.0 3.5 0 4.0 Page 5 of 6 2 4 6 8 10 12 14 16 18 20 4PT Series SEMICONDUCTOR RoHS RoHS Case Style TO-220AB 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) 4.70 (0.185) 4.44 (0.1754) 3.91 (0.154) 3.74 (0.148) 1.39 (0.055) 1.14 (0.045) 2.87 (0.113) 2.62 (0.103) 3.68 (0.145) 3.43 (0.135) PIN 2 1 15.32 (0.603) 14.55 (0.573) 16.13 (0.635) 15.87 (0.625) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 3 4.06 (0.160) 3.56 (0.140) 2.79 (0.110) 2.54 (0.100) 1.45 (0.057) 1.14 (0.045) 14.22 (0.560) 13.46 (0.530) 2.67 (0.105) 2.41 (0.095) 0.90 (0.035) 0.70 (0.028) 2.65 (0.104) 2.45 (0.096) 0.56 (0.022) 0.36 (0.014) 5.20 (0.205) 4.95 (0.195) TO-251 (I-PAK) 6.6(0.26) 2.4(0.095) 2.2(0.086) 6.4(0.52) 1.5(0.059) 5.4(0.212) 1.37(0.054) 5.2(0.204) 0.62(0.024) 0.48(0.019) 6.2(0.244) 4T 6(0.236) 16.3(0.641) 15.9(0.626) 1.9(0.075) 1.8(0.071) RoHS 9.4(0.37) 9(0.354) 0.85(0.033) 0.76(0.03) 0.65(0.026) 0.55(0.021) 4.6(0.181) 4.4(0.173) 0.62(0.024) 0.45(0.017) TO-252 (D-PAK) 2.4(0.095) 2.2(0.086) 6.6(0.259) 6.4(0.251) 1.5(0.059) 5.4(0.212) 5.2(0.204) 1.37(0.054) 0.62(0.024) 0.48(0.019) 2 1 1.14(0.045) 0.76(0.030) 2.28(0.090) 2 3 9.35(0.368) 10.1(0.397) 0.89(0.035) 0.64(0.025) 6.2(0.244) 6(0.236) 0.62(0.024) 0.45(0.017) 2 (A2) 4.57(0.180) (G)3 1(A1) www.nellsemi.com Page 6 of 6