isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor 60NF06 FEATURES ·Drain Current –ID=60A@ TC=25℃ ·Drain Source Voltage: VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.016Ω(Max) ·Fast Switching DESCRIPTION Suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements . APPLICATIONS ·High-efficiency DC-DC converters ·UPS and motor control ·Automotive ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous VALUE UNIT 60 V ±20 V ID Drain Current-Continuous 60 A IDM Drain Current-Single Pluse (tp≤10μs) 240 A PD Total Dissipation @TC=25℃ 110 W TJ Max. Operating Junction Temperature 175 ℃ -65~175 ℃ MAX UNIT Tstg Storage Temperature THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case 1.36 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor 60NF06 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)DSS PARAMETER CONDITIONS MIN Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 60 VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 RDS(on) Drain-Source On-Resistance IGSS MAX UNIT V 4 V VGS= 10V; ID= 30A 0.016 Ω Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 60V; VGS=0 VDS= 60V; VGS=0; Tj= 125℃ 1 10 μA VSD Forward On-Voltage IS= 60A; VGS=0 1.3 V · isc Website：www.iscsemi.cn