APT50M65B2FLL APT50M65LFLL 500V 67A 0.065Ω POWER MOS 7 R FREDFET B2FLL T-MaxTM ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg VDSS ID LFLL D • Increased Power Dissipation • Easier To Drive • Popular T-MAX™ or TO-264 Package MAXIMUM RATINGS Symbol TO-264 G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT50M65B2FLL_LFLL UNIT 500 Volts Drain-Source Voltage 67 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 694 Watts Linear Derating Factor 5.5 W/°C PD TJ,TSTG 268 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 1 Volts -55 to 150 °C 300 Amps 67 (Repetitive and Non-Repetitive) 1 50 4 mJ 3000 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 500 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, 33.5A) TYP MAX UNIT Volts 0.065 Ohms Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA 12-2003 Characteristic / Test Conditions 050-7031 Rev C Symbol DYNAMIC CHARACTERISTICS Symbol APT50M65 B2FLL - LFLL Characteristic Input Capacitance VGS = 0V Coss Output Capacitance VDS = 25V C rss 3 Total Gate Charge Qgs Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time ID = 67A @ 25°C RESISTIVE SWITCHING VGS = 15V Rise Time td(off) VDD = 250V Turn-off Delay Time tf ID = 67A @ 25°C Fall Time Turn-on Switching Energy Eoff Turn-off Switching Energy INDUCTIVE SWITCHING @ 25°C 6 Turn-on Switching Energy Eoff Turn-off Switching Energy 6 ns 1035 VDD = 333V, VGS = 15V Eon nC 30 RG = 0.6Ω Eon UNIT pF 87 141 40 70 12 28 29 VGS = 10V Qgd MAX 7010 1390 VDD = 250V Gate-Source Charge tr TYP f = 1 MHz Reverse Transfer Capacitance Qg MIN Test Conditions Ciss ID = 67A, RG = 3Ω 845 INDUCTIVE SWITCHING @ 125°C 1556 VDD = 333V VGS = 15V ID = 67A, RG = 3Ω µJ 1013 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv/ Characteristic / Test Conditions MIN TYP 67 Continuous Source Current (Body Diode) Amps Pulsed Source Current (Body Diode) 268 Diode Forward Voltage 2 (VGS = 0V, IS = -67A) 1.3 Volts 15 V/ns dv/ dt 5 Reverse Recovery Time (IS = -67A, di/dt = 100A/µs) Tj = 25°C 270 Tj = 125°C 540 Q rr Reverse Recovery Charge (IS = -67A, di/dt = 100A/µs) Tj = 25°C 2.6 Tj = 125°C 9.6 IRRM Peak Recovery Current (IS = -67A, di/dt = 100A/µs) Tj = 25°C 17 Tj = 125°C 31 t rr UNIT 1 Peak Diode Recovery dt MAX ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP MAX 0.18 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.9 0.16 0.7 0.12 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7031 Rev C 12-2003 0.20 0.08 0.3 t2 0.1 0 t1 Duty Factor D = t1/t2 0.04 SINGLE PULSE 0.05 10-5 10-4 °C/W 4 Starting Tj = +25°C, L = 1.34mH, RG = 25Ω, Peak IL = 67A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -67A di/dt ≤ 700A/µs VR ≤ 500V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.5 UNIT Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves APT50M65B2FLL - LFLL 180 15 &10V 0.0271 Power (Watts) 0.0656 0.0860 0.00899F 0.0202F 0.293F ID, DRAIN CURRENT (AMPERES) RC MODEL Junction temp. ( ”C) Case temperature 160 140 120 7V 100 6.5V 80 60 6V 40 5.5V 20 5V 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 140 120 100 80 60 TJ = +125°C 40 TJ = +25°C 20 TJ = -55°C 0 1 2 3 4 5 6 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 60 50 40 30 20 10 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 25 1.3 1.2 1.1 VGS=10V 1.00 VGS=20V 0.90 0.80 0 10 20 30 40 50 60 70 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 2.5 1.05 1.00 0.95 0.90 0.85 -50 1.2 I = 33.5A V = 10V D GS 2.0 1.5 1.0 0.5 0.0 -50 1.10 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) NORMALIZED TO = 10V @ 33.5A GS 1.15 70 0 V 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 12-2003 0 1.4 050-7031 Rev C ID, DRAIN CURRENT (AMPERES) 160 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 180 8V APT50M65B2FLL - LFLL 30,000 OPERATION HERE LIMITED BY RDS (ON) 10,000 100 100µS 10 1mS TC =+25°C TJ =+150°C SINGLE PULSE C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 268 100 10 = 67A VDS=100V VDS=250V VDS=400V 8 4 0 0 40 80 120 160 200 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 16 12 Crss 10mS 1 10 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA D Coss 1,000 1 I Ciss 200 100 TJ =+150°C TJ =+25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 160 80 V td(off) 70 = 333V DD R 140 G = 3Ω T = 125°C tf J 120 V 50 DD R G = 3Ω T = 125°C J 40 L = 100µH 30 20 30 50 70 90 V DD R G tr 70 90 110 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 5000 = 333V I T = 125°C J Eon L = 100µH E ON includes diode reverse recovery. 1500 1000 500 30 V = 3Ω SWITCHING ENERGY (µJ) SWITCHING ENERGY (µJ) 12-2003 050-7031 Rev C 60 0 10 110 ID (A) FIGURE 14, DELAY TIMES vs CURRENT 2000 80 20 0 10 2500 100 40 td(on) 10 3000 L = 100µH = 333V tr and tf (ns) td(on) and td(off) (ns) 60 DD D 50 = 333V = 67A Eoff T = 125°C J 4000 L = 100µH E ON includes diode reverse recovery. 3000 2000 Eon 1000 Eoff 0 10 0 30 50 70 90 110 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE Typical Performance Curves APT50M65B2FLL - LFLL 90% Gate Voltage 10 % Gate Voltage T = 125 C J TJ = 125 C td(off) td(on) tr Drain Voltage Drain Current 90% 90% 5% 10% 10 % Drain Voltage tf Switching Energy Switching Energy 0 Drain Current Figure 19, Turn-off Switching Waveforms and Definitions Figure 18, Turn-on Switching Waveforms and Definitions APT60DF60 V CE IC V DD G D.U.T. Figure 20, Inductive Switching Test Circuit T-MAX® (B2) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) TO-264 (L) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 15.49 (.610) 16.26 (.640) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.38 (.212) 6.20 (.244) 5.79 (.228) 6.20 (.244) 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 2.29 (.090) 2.69 (.106) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 19.81 (.780) 21.39 (.842) Gate Drain 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) Gate Drain Source Source 2.21 (.087) 2.59 (.102) 2.29 (.090) 2.69 (.106) 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 12-2003 4.50 (.177) Max. 25.48 (1.003) 26.49 (1.043) 050-7031 Rev C Drain Drain 20.80 (.819) 21.46 (.845)