APTC90H12SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 900V RDSon = 120mΩ max @ Tj = 25°C ID = 30A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies VBUS CR3A CR1B Q1 CR3B Features • Q3 G3 G1 OUT1 OUT2 S1 CR2A Q2 CR4A CR2B CR4B G4 S2 S4 0/VBUS G4 S3 S4 VBUS ID IDM VGS RDSon PD IAR EAR EAS Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • • Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration 0/VBUS • • OUT2 OUT1 S1 S2 NTC2 G1 G2 NTC1 Absolute maximum ratings Symbol VDSS • NTC2 G3 Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Q4 G2 NTC1 - S3 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 900 30 23 75 ±20 120 250 8.8 2.9 1940 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTC90H12SCTG – Rev 1 September, 2009 CR1A APTC90H12SCTG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min Typ 2.5 500 100 3 Tj = 25°C Tj = 125°C VGS = 0V,VDS = 900V VGS = 0V,VDS = 900V VGS = 10V, ID = 26A VGS = VDS, ID = 3mA VGS = ±20 V, VDS = 0V Max 100 Unit 120 3.5 100 mΩ V nA Max Unit µA Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 100V f = 1MHz Min Typ 6800 330 pF 270 VGS = 10V VBus = 400V ID = 26A nC 32 115 70 Inductive Switching (125°C) VGS = 10V VBus = 600V ID = 26A RG = 7.5Ω 20 ns 400 25 Inductive switching @ 25°C VGS = 10V ; VBus = 600V ID = 26A ; RG = 7.5Ω Inductive switching @ 125°C VGS = 10V ; VBus = 600V ID = 26A ; RG = 7.5Ω 900 µJ 750 1278 µJ 867 Series diode ratings and characteristics IRM IF VF Maximum Reverse Leakage Current Test Conditions VR=200V DC Forward Current Diode Forward Voltage Reverse Recovery Time Qrr Reverse Recovery Charge Tj = 25°C Tj = 125°C Tc = 85°C IF = 30A IF = 60A IF = 30A trr Min 200 IF = 30A VR = 133V Typ 250 500 30 1.1 1.4 Tj = 125°C 0.9 Tj = 25°C 24 Tj = 125°C 48 Tj = 25°C 33 Tj = 125°C 150 di/dt = 200A/µs www.microsemi.com Max Unit V µA A 1.15 V ns nC 2–6 APTC90H12SCTG – Rev 1 September, 2009 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTC90H12SCTG Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage QC Total Capacitive Charge Q Total Capacitance Test Conditions VR=1200V IF = 10A Min 1200 Tj = 25°C Tj = 175°C Tc = 100°C Tj = 25°C Tj = 175°C Typ Max 32 56 10 1.6 2.3 200 1000 IF = 10A, VR = 600V di/dt =500A/µs f = 1MHz, VR = 200V 96 f = 1MHz, VR = 400V 69 Unit V µA A 1.8 3 40 V nC pF Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ Transistor Series diode Parallel SiC diode To Heatsink M5 4000 -40 -40 -40 2.5 Max 0.5 1.2 1.8 Unit °C/W V 150 125 100 4.7 160 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R25 Typ 50 5 3952 4 Max Unit kΩ % K % T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T − ⎟⎟⎥ exp ⎢ B25 / 85 ⎜⎜ ⎝ T25 T ⎠⎦ ⎣ www.microsemi.com 3–6 APTC90H12SCTG – Rev 1 September, 2009 Symbol R25 ∆R25/R25 B25/85 ∆B/B APTC90H12SCTG SP4 Package outline (dimensions in mm) ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com Typical CoolMOS Performance Curve ZVS 150 ZCS 100 50 Hard switching 0 10 12.5 15 17.5 20 22.5 25 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 25 2 Eon 1 100 125 150 3 Switching Energy (mJ) Eon and Eoff (mJ) VDS=600V RG=7.5Ω TJ=125°C L=100µH 75 Switching Energy vs Gate Resistance Switching Energy vs Current 2 50 TJ, Junction Temperature (°C) ID, Drain Current (A) Eoff 1 0 Eoff 2 Eon VDS=600V ID=26A TJ=125°C L=100µH 1 0 5 10 15 20 25 30 ID, Drain Current (A) 35 40 5 10 15 20 25 30 35 Gate Resistance (Ohms) www.microsemi.com 4–6 APTC90H12SCTG – Rev 1 September, 2009 Frequency (kHz) 200 VDS=600V D=50% RG=7.5Ω TJ=125°C TC=75°C RDS(on), Drain to Source ON resistance (Normalized) Operating Frequency vs Drain Current 250 APTC90H12SCTG Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 6V 80 5V 40 0 0 5 10 15 VDS, Drain to Source Voltage (V) 20 Maximum Safe Operating Area limited by RDSon 10 10 ms Single pulse TJ=150°C TC=25°C ID, DC Drain Current (A) ID, Drain Current (A) 950 925 900 25 75 100 125 30 25 20 15 10 5 0.1 0 1 10 100 1000 25 VDS, Drain to Source Voltage (V) Capacitance vs Drain to Source Voltage Ciss 10000 1000 Coss 100 10 Crss 1 0 25 50 75 100 125 150 175 200 VDS, Drain to Source Voltage (V) 50 75 100 125 TC, Case Temperature (°C) 150 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 50 DC Drain Current vs Case Temperature 35 100 µs 1 975 TJ, Junction Temperature (°C) 1000 100 1000 10 VDS=400V ID=26A TJ=25°C 8 6 4 2 0 0 www.microsemi.com 50 100 150 200 Gate Charge (nC) 250 300 5–6 APTC90H12SCTG – Rev 1 September, 2009 ID, Drain Current (A) VGS=20, 8V BVDSS, Drain to Source Breakdown Voltage Breakdown Voltage vs Temperature 120 APTC90H12SCTG Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 2 0.9 1.6 0.7 1.2 0.5 0.8 0.3 0.1 0.4 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 20 100 15 IR Reverse Current (µA) IF Forward Current (A) TJ=25°C TJ=75°C 10 TJ=125°C 5 TJ=175°C 75 50 0.5 1 1.5 2 2.5 3 TJ=125°C 25 0 0 TJ=75°C 3.5 VF Forward Voltage (V) TJ=175°C 0 400 600 TJ=25°C 800 1000 1200 1400 1600 VR Reverse Voltage (V) Capacitance vs.Reverse Voltage C, Capacitance (pF) 700 600 500 400 300 200 100 0 10 100 VR Reverse Voltage 1000 “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTC90H12SCTG – Rev 1 September, 2009 1