4.8 V NPN Silicon Bipolar Common␣ Emitter Transistor Technical Data AT-38086 Features • 4.8 Volt Pulsed (pulse width = 577 µsec, duty cycle = 12.5%)/CW Operation 85 mil Plastic Surface Mount Package Outline 86 • +28 dBm Pulsed Pout @␣ 900␣ MHz, Typ. • +23.5 dBm CW Pout @␣ 836.5␣ MHz, Typ. • 60% Pulsed Collector Efficiency @ 900 MHz, Typ. • 11 dB Pulsed Power Gain @␣ 900 MHz, Typ. • -35 dBc IMD3 @ Pout of 17␣ dBm per tone, 900 MHz, Typ. Pin Configuration 4 EMITTER 1 BASE 3 COLLECTOR Description Hewlett Packard’s AT-38086 is a low cost, NPN silicon bipolar junction transistor housed in a surface mount plastic package. This device is designed for use as a pre-driver or driver device in applications for cellular and wireless communications markets. At 4.8 volts, the AT-38086 features +28 dBm pulsed output power, Class AB operation, and +23.5␣ dBm CW. Superior efficiency and gain makes the AT-38086 an excellent choice for battery powered systems. The AT-38086 is fabricated with Hewlett Packard’s 10 GHz Ft SelfAligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metalization in the fabrication of these devices. 2 EMITTER Applications • Driver Amplifier for GSM and AMPS/ETACS/ 900 MHz NMT Cellular Phones • 900 MHz ISM and Special Mobile Radio 4-89 5965-5959E AT-38086 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC IC PT PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current [2] Collector Current [3] Peak Power Dissipation [2, 4] CW Power Dissipation [3, 5] Junction Temperature Storage Temperature Units V V V mA mA W mW °C °C Thermal Resistance [6]: θjc = 140°C/W Absolute Maximum[1] 1.4 16.0 9.5 250 160 3.7 460 150 -65 to 150 Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. Pulsed operation, pulse width = 577␣ µsec, duty cycle␣ =␣ 12.5%. 3. CW operation. 4. Derate at 57.1 mW/°C for TC␣ >␣ 85 °C. TC is defined to be the temperature of the collector pin 3, where the lead contacts the circuit board. 5. Derate at 7.1 mW/°C for TC␣ >␣ 85 °C. TC is defined to be the temperature of the collector pin 3, where the lead contacts the circuit board. 6. Using the liquid crystal technique, VCE = 4.5 V, Ic = 50 mA, Tj =150°C, 1-2␣ µm “hot-spot” resolution. Electrical Specifications, TC = 25°C Symbol Parameters and Test Conditions Units Min. Typ. Max. Freq. = 900 MHz, VCE = 4.8 V, ICQ = 20 mA, Pulse width = 577 µsec, duty cycle = 12.5%, unless otherwise specified Pout Output Power, Pulsed Operation[1] Test Circuit A, Pin = +17 dBm dBm +26.5 +28.0 ηC Collector Efficiency, Pulsed Operation[1] Test Circuit A, Pin = +17 dBm % 50 60 Mismatch Tolerance No Damage, Pulsed[1] Test Circuit A, Pout = +28 dBm, any phase, 2 sec duration 7:1 Pout Output Power, CW Operation[2] F = 836.5 MHz, ICQ = 15 mA Test Circuit B, Pin = +10 dBm dBm IMD3 3rd Order Intermodulation Distortion, F1 = 899 MHz, F2 = 901 MHz 2-Tone Test, Pout each tone = +17 dBm, CW [2,3] ICQ = 15 mA, Test Circuit B dBc +22.0 +23.5 -35 Mismatch Tolerance, No Damage, CW[2] F = 836.5 MHz, ICQ = 15 mA Test Circuit B, Pout = +23.5 dBm any phase, 2 sec duration 7:1 BVEBO Emitter-Base Breakdown Voltage IE = 0.2 mA, open collector V 1.4 BVCBO Collector-Base Breakdown Voltage IC = 1.0 mA, open emitter V 16.0 BVCEO Collector-Emitter Breakdown Voltage IC = 3.0 mA, open base V 9.5 hFE Forward Current Transfer Ratio VCE = 3 V, IC = 160 mA — 40 ICEO Collector Leakage Current VCEO = 5 V µA 150 Notes: 1. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit A (GSM). 2. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit B (AMPS). 4-90 3. Test circuit B re-tuned at 900␣ MHz. 330 15 AT-38086 Typical Performance, TC = 25°C Frequency = 900 MHz, VCE = 4.8 V, ICQ = 20 mA, pulsed operation, pulse width␣ =␣ 577␣ µsec, duty cycle␣ =␣ 12.5%, Test Circuit A (GSM), unless otherwise specified 30 28 80 26 70 Pout 60 50 22 ηc 20 40 18 30 16 20 14 10 12 2 4 6 28 26 24 22 20 18 3.6 V 4.8 V 6.0 V 16 14 12 0 8 10 12 14 16 18 20 22 24 4 6 INPUT POWER (dBm) 29.0 Γ source = 0.75 ∠ -177 Γ load = 0.48 ∠ +161 28.8 28 26 24 TC = +85°C TC = +25°C TC = –40°C 22 20 10 12 14 16 18 20 60 50 40 30 20 3.6 V 4.8 V 6.0 V 10 8 10 12 14 16 18 20 22 24 2 22 INPUT POWER (dBm) Figure 4. Output Power vs. Input Power Over Temperature. Pin = +17 dBm 71 Pout 67 28.2 28.0 ηc 63 27.8 27.6 59 27.4 27.2 24 27.0 880 890 900 910 55 920 FREQUENCY (MHz) Figure 5. Output Power and Collector Efficiency vs. Frequency. Note: Tuned at 900 MHz, then Swept over Frequency. 4-91 6 8 10 12 14 16 18 20 22 24 Figure 3. Collector Efficiency vs. Input Power Over Bias Voltage. 75 Γ source = 0.75 ∠ -177 Γ load = 0.48 ∠ +161 28.6 28.4 4 INPUT POWER (dBm) Figure 2. Output Power vs. Input Power Over Bias Voltage. OUTPUT POWER (dBm) OUTPUT POWER (dBm) 30 70 INPUT POWER (dBm) Figure 1. Output Power and Collector Efficiency vs. Input Power. 32 Γ source = 0.75 ∠ -177 Γ load = 0.48 ∠ +161 80 0 2 0 -2 RETURN LOSS (dB) 24 90 Γ source = 0.75 ∠ -177 Γ load = 0.48 ∠ +161 COLLECTOR EFFICIENCY (%) 32 90 COLLECTOR EFFICIENCY (%) OUTPUT POWER (dBm) 100 OUTPUT POWER (dBm) Γ source = 0.75 ∠ -177 Γ load = 0.48 ∠ +161 30 COLLECTOR EFFICIENCY (%) 32 Γ source = 0.75 ∠ -177 Γ load = 0.48 ∠ +161 -4 -6 Output R.L. -8 -10 -12 Input R.L. -14 -16 800 850 900 950 1000 FREQUENCY (MHz) Figure 6. Input and Output Return Loss vs. Frequency. AT-38086 Typical Performance, TC = 25°C Freq. = 836.5 MHz, VCE = 4.8 V, ICQ = 15 mA, CW operation, Test Circuit B (AMPS), unless otherwise specified 70 Pout 22 60 20 50 ηc 40 18 16 30 14 2 4 6 8 10 12 14 27 25 23 21 19 3.6 V 4.8 V 6.0 V 17 20 16 17 2 4 6 8 10 12 14 60 50 40 30 3.6 V 4.8 V 6.0 V 20 16 17 2 4 8 10 12 14 16 17 Figure 9. Collector Efficiency vs. Input Power Over Bias Voltage. 0 0 Γ source = 0.86 ∠ -180 -2 Γ load = 0.46 ∠ +128 Γ source = 0.86 ∠ -180 Γ load = 0.46 ∠ +128 6 INPUT POWER (dBm) Figure 8. Output Power vs. Input Power Over Bias Voltage. Γ source = 0.87 ∠ -178 Γ load = 0.48 ∠ +126 -5 -10 24 22 20 18 TC = +85°C TC = +25°C TC = –40°C 16 14 2 4 6 8 10 12 14 -4 -15 Output R.L. IMD (dBc) RETURN LOSS (dB) OUTPUT POWER (dBm) 70 INPUT POWER (dBm) Figure 7. Output Power and Collector Efficiency vs. Input Power. 26 Γ source = 0.86 ∠ -180 Γ load = 0.46 ∠ +128 80 10 15 INPUT POWER (dBm) 28 90 Γ source = 0.86 ∠ -180 Γ load = 0.46 ∠ +128 COLLECTOR EFFICIENCY (%) 24 80 OUTPUT POWER (dBm) OUTPUT POWER (dBm) 26 29 90 Γ source = 0.86 ∠ -180 Γ load = 0.46 ∠ +128 COLLECTOR EFFICIENCY (%) 28 -6 -8 Input R.L. INPUT POWER (dBm) Figure 10. Output Power vs. Input Power Over Temperature. -14 750 -25 -30 IMD3 -35 -10 -40 -12 16 17 -20 IMD5 -45 800 836.5 850 900 950 FREQUENCY (MHz) Figure 11. Input and Output Return Loss vs. Frequency. -50 5 7 9 11 13 15 17 19 21 22 OUTPUT POWER/TONE (dBm) Figure 12. IMD3, IMD5 vs. Output Power Per Tone. Note: Test circuit B (AMPS) used and re-tuned at 900 MHz. 4-92 AT-38086 Typical Large Signal Impedances (GSM) 3.5 Freq. = 900 MHz, VCE = 4.8 V, ICQ = 20 mA, Pulsed Operation, Pout␣ =␣ +28.0 dBm Γ source Γ load Freq. MHz Mag. Ang. Mag. Ang. 880 0.743 -175.6 0.474 162.0 890 0.741 -176.4 0.476 161.5 900 0.747 -177.3 0.478 161.2 910 0.751 -178.1 0.481 160.0 915 0.752 -178.6 0.482 159.6 920 0.754 -179.1 0.483 158.9 3.3 3.1 Ccb (pF) 2.9 2.7 2.5 2.3 2.1 1.9 1.7 1.5 0 1 2 3 4 5 6 7 8 Vcb (V) AT-38086 Typical Large Signal Impedances (AMPS) Figure 13. Collector-Base Capacitance vs. Collector-Base Voltage (DC Test). Freq. = 836.5 MHz, VCE = 4.8 V, ICQ = 15 mA, CW Operation, Pout␣ =␣ +23.5 dBm Γ source Γ load Freq. MHz Mag. Ang. Mag. Ang. 824 0.856 -178.9 0.455 129.1 836.5 0.864 -179.9 0.459 128.2 849 0.870 -179.1 0.464 127.3 SPICE Model Parameters Die Model Packaged Model CPad Cbc C CPad CPad B L1 Lb B C B E1 Die Area = 0.67 CPad = 0.36 pF Label BF IKF ISE NE VAF NF TF XTF VTF ITF PTF XTB BR IKR ISC NC VAR Value 280 299.9 9.9E-11 2.399 33.16 0.9935 1.6E-11 0.006656 0.02785 0.001 23 0 54.61 81 8.7E-13 1.587 1.511 Cbe E1 Label NR TR EG IS XTI CJC VJC MJC XCJC FC CJE VJE MJE RB RE RC Cce Le L2 E Label Cbe Cbc Cce L1 L2 L3 Lb Le 4-93 Value 0.032 pF 0.036 pF 0.122 pF 0.46 nH 0.46 nH 0.46 nH 0.47 nH 0.14 nH C E2 E2 Value 0.9886 1E-9 1.11 3.598E-15 3 1.02 pF 0.4276 0.2508 0.001 0.999 0.98 pF 0.811 0.596 5.435 1.30 0.01 L3 9 AT-38086 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω VCE = 3.6 V, Ic = 50 mA, Tc = 25°C Freq. S11 GHz Mag. Ang. dB 0.05 0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 0.71 0.73 0.75 0.76 0.76 0.77 0.77 0.78 0.78 0.79 0.80 0.80 0.81 0.81 0.82 -85 -124 -160 -176 175 171 169 164 160 156 152 148 145 142 139 31.7 28.2 21.3 15.5 12.0 10.4 9.5 7.6 6.0 4.7 3.5 2.5 1.5 0.7 -0.1 S21 Mag. Ang. dB S12 Mag. Ang. Mag. S22 Ang. 38.52 25.72 11.66 5.95 3.98 3.32 2.99 2.39 1.99 1.71 1.49 1.33 1.19 1.08 0.99 138 118 84 76 72 69 63 57 51 46 41 37 32 28 25 -31.7 -29.1 -27.3 -25.5 -23.6 -22.6 -22.0 -20.5 -19.3 -18.3 -17.3 -16.4 -15.7 -15.0 -14.4 0.026 0.035 0.043 0.053 0.066 0.074 0.079 0.094 0.108 0.122 0.137 0.151 0.164 0.178 0.191 54 39 35 43 50 52 54 56 57 57 57 57 56 55 54 0.75 0.56 0.39 0.36 0.36 0.36 0.37 0.38 0.40 0.41 0.43 0.45 0.47 0.49 0.51 -57 -90 -133 -155 -165 -168 -170 -174 -176 -179 179 176 174 172 169 39.02 26.32 12.00 6.14 4.10 3.42 3.08 2.46 2.05 1.76 1.54 1.37 1.23 1.12 1.02 139 119 97 85 76 72 69 63 57 51 46 41 37 32 28 -31.7 -29.1 -27.3 -25.5 -23.7 -22.7 -22.0 -20.6 -19.4 -18.3 -17.4 -16.5 -15.8 -15.0 -14.4 0.026 0.035 0.043 0.053 0.065 0.073 0.079 0.093 0.107 0.121 0.135 0.150 0.163 0.177 0.190 54 40 35 43 49 52 53 56 57 58 57 57 56 55 55 0.76 0.56 0.38 0.35 0.35 0.35 0.36 0.37 0.38 0.40 0.42 0.44 0.46 0.48 0.50 -55 -87 -130 -154 -163 -167 -169 -172 -175 -178 180 177 175 173 170 39.07 26.60 12.21 6.25 4.18 3.48 3.13 2.51 2.09 1.79 1.56 1.39 1.25 1.13 1.03 140 120 98 85 76 72 69 63 57 51 46 41 37 32 28 -32.0 -29.1 -27.3 -25.5 -23.7 -22.7 -22.2 -20.7 -19.5 -18.4 -17.5 -16.6 -15.8 -15.1 -14.5 0.025 0.035 0.043 0.053 0.065 0.073 0.078 0.092 0.106 0.120 0.134 0.148 0.162 0.175 0.188 55 40 35 42 49 52 53 56 57 57 58 57 56 56 55 0.76 0.56 0.38 0.34 0.34 0.34 0.34 0.36 0.37 0.39 0.41 0.43 0.45 0.47 0.49 -54 -85 -128 -152 -162 -166 -167 -171 -174 -177 -179 178 176 174 171 VCE = 4.8 V, Ic = 50 mA, Tc = 25°C 0.05 0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 0.72 0.73 0.75 0.75 0.76 0.76 0.76 0.77 0.78 0.78 0.79 0.80 0.80 0.81 0.82 -82 -121 -158 -176 176 172 169 164 160 156 152 149 145 142 139 31.8 28.4 21.6 15.8 12.3 10.7 9.8 7.8 6.2 4.9 3.8 2.7 1.8 1.0 0.2 VCE = 6.0 V, Ic = 50 mA, Tc = 25°C 0.05 0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 0.73 0.74 0.74 0.75 0.75 0.76 0.76 0.77 0.77 0.78 0.79 0.79 0.80 0.81 0.81 -79 -119 -157 -175 176 172 170 165 160 156 152 149 146 142 139 31.8 28.5 21.7 15.9 12.4 10.8 9.9 8.0 6.4 5.1 3.9 2.9 1.9 1.1 0.3 4-94 Typical Performance 35 35 20 MAG GAIN (dB) GAIN (dB) 25 15 10 35 MSG MSG |S21|2 30 30 25 25 0 -5 0.05 0.25 0.75 1.00 1.50 2.00 2.50 3.00 MAG 20 15 10 5 GAIN (dB) 30 Part Number 0 0.05 0.25 0.75 1.00 1.50 2.00 2.50 3.00 0 0.05 0.25 0.75 1.00 1.50 2.00 2.50 3.00 FREQUENCY (GHz) Figure 15. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. VCE = 4.8V, Ic = 50 mA. No. of Devices 1000 100 Container 7" Reel Antistatic Bag Package Dimensions Outline 86 0.51 ± 0.13 (0.020 ± 0.005) 4 45° C L 3 2.34 ± 0.38 (0.092 ± 0.015) 1 2 1.52 ± 0.25 (0.060 ± 0.010) 2.67 ± 0.38 (0.105 ± 0.15) 5° TYP. 0.66 ± 0.013 (0.026 ± 0.005) |S21|2 5 Part Number Ordering Information AT-38086-TR1 AT-38086-BLK MAG 15 5 FREQUENCY (GHz) Figure 14. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. VCE = 3.6V, Ic = 50 mA. 20 10 |S21|2 MSG 0.203 ± 0.051 (0.006 ± 0.002) 8° MAX 0° MIN 2.16 ± 0.13 (0.085 ± 0.005) 0.30 MIN (0.012 MIN) DIMENSIONS ARE IN MILLIMETERS (INCHES) 4-95 FREQUENCY (GHz) Figure 16. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. VCE = 6.0V, Ic = 50 mA. Test Circuit A: Test Circuit Board Layout @ 900 MHz for Pulsed Operation (GSM) VBB VBB VCC C3 R2 L1 R3 R1 C2 T1 VCC C5 C8 C9 L2 R5 9/96 C6 38.1 (1.5) R4 C1 C4 INPUT C10 C7 PA1 DEMO OUTPUT B–MFG0139 C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 R1 R2 R3 R4 R5 T1 L1 L2 100.0 pF 100.0 pF 100.0 nF 8.2 pF 100.0 nF 100.0 pF 3.6 pF 1.5 µF 10.0 µF 100.0 pF 10.0 Ω 619.0 Ω 10.0 Ω 40.0 Ω 10.0 Ω MBT 2222A 18.0 µH 18.0 µH 76.2 (3.0) Pulse Test VCE = 4.8 V ICQ = 20 mA Freq. = 900 MHz Test Circuit: FR-4 Microstrip, glass epoxy board Dielectric Constant = 4.5 Thickness = 0.79 (.031) NOTE: Dimensions are shown in millimeters (inches). Test Circuit A: Test Circuit Schematic Diagram @ 900 MHz for Pulsed Operation (GSM) VBB 10 Ω 619 Ω B DC C E Transistor 100 nF 10 Ω 18 µH 10 Ω 100 pF 100 pF 80 Ω λ/4 @ 900 MHz 100 pF VCC Pulse Test VCE = 4.8 V ICQ = 20 mA Freq. = 900 MHz 50 Ω 40 Ω 80 Ω 18 µH 8.2 pF 1.5 µF 10 µF λ/4 @ 900 MHz 100 pF 50 Ω RF OUT = 19.00 (.748) RF IN 100 nF = 6.53 (.257) 4-96 3.6 pF Test Circuit B: Test Circuit Board Layout @ 836.5 MHz for CW Operation (AMPS) VBB VBB VCC C2 R2 L1 C7 C8 L2 R3 R1 VCC C6 R5 T1 C4 9/96 C5 38.1 (1.5) R4 C3 C1 INPUT C9 PA1 DEMO C10 OUTPUT B–MFG0139 C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 R1 R2 R3 R4 R5 T1 L1 L2 100.0 pF 100.0 nF 11.0 pF 100.0 pF 100.0 pF 100.0 nF 1.5 µF 10.0 µF 4.7 pF 100.0 pF 10.0 Ω 619.0 Ω 10.0 Ω 40.0 Ω 10.0 Ω MBT 2222A 18.0 µH 18.0 µH 76.2 (3.0) CW Test VCE = 4.8 V ICQ = 15 mA Freq. = 836.5 MHz Test Circuit: FR-4 Microstrip, glass epoxy board Dielectric Constant = 4.5 Thickness = 0.79 (.031) NOTE: Dimensions are shown in millimeters (inches). Test Circuit B: Test Circuit Schematic Diagram @ 836.5 MHz for CW Operation (AMPS) VBB 10 Ω 619 Ω B DC C E Transistor 100 nF 10 Ω 18 µH 10 Ω 100 pF 100 pF 80 Ω λ/4 @ 836.5 MHz 100 pF VCC CW Test VCE = 4.8 V ICQ = 15 mA Freq. = 836.5 MHz 50 Ω 40 Ω 80 Ω 18 µH 11.0 pF 1.5 µF 10 µF λ/4 @ 836.5 MHz 100 pF 50 Ω RF OUT = 32.66 (1.286) RF IN 100 nF = 9.02 (.355) 4-97 4.7 pF Tape Dimensions and Product Orientation for Outline 86 REEL 1 12 mm CARRIER TAPE NOTE: 1 INDICATES PIN 1 ORIENTATION USER FEED DIRECTION COVER TAPE P0 P2 D0 t 10 PITCHES CUMULATIVE TOLERANCE ON TAPE ±0.2 MM COVER TAPE E A K C F B T P1 DESCRIPTION SYMBOL W USER FEED DIRECTION D1 SIZE (mm) SIZE (INCHES) 0.227 ± 0.004 0.240 ± 0.004 0.067 ± 0.004 0.314 ± 0.004 0.059 min. CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A B K P1 D1 5.77 ± 0.10 6.10 ± 0.10 1.70 ± 0.10 8.00 ± 0.10 1.50 min. PERFORATION DIAMETER PITCH POSITION D0 P0 E 1.50 + 0.10/-0.05 0.059 + 0.004/-0.002 0.157 ± 0.004 4.00 ± 0.10 0.069 ± 0.004 1.75 ± 0.10 CARRIER TAPE WIDTH THICKNESS W t 12.00 ± 0.20 0.30 ± 0.05 0.472 ± 0.008 0.012 ± 0.002 COVER TAPE WIDTH TAPE THICKNESS C T 9.30 ± 0.10 0.065 ± 0.010 0.366 ± 0.004 0.0026 ± 0.0004 DISTANCE BETWEEN CENTERLINE CAVITY TO PERFORATION (WIDTH DIRECTION) F 5.50 ± 0.05 0.217 ± 0.002 CAVITY TO PERFORATION (LENGTH DIRECTION) P2 2.00 ± 0.05 0.079 ± 0.002 4-98