isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT29F/AF/BF/CF/DF DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 0.4A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40V(Min)- BDT29F; 60V(Min)- BDT29AF 80V(Min)- BDT29BF; 100V(Min)- BDT29CF 120V(Min)- BDT29DF ·Complement to Type BDT30F/AF/BF/CF/DF APPLICATIONS ·Designed for use in audio output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER Collector-Base Voltage Collector-Emitter Voltage VALUE BDT29F 80 BDT29AF 100 BDT29BF 120 BDT29CF 140 BDT29DF 160 BDT29F 40 BDT29AF 60 BDT29BF 80 BDT29CF 100 BDT29DF 120 UNIT V V Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak 3 A IB Base Current 0.4 A PC Collector Power Dissipation TC=25℃ 19 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Ttemperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc Website：www.iscsemi.cn MAX UNIT 9.17 ℃/W 55 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT29F/AF/BF/CF/DF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-Emitter Sustaining Voltage CONDITIONS MIN BDT29F 40 BDT29AF 60 BDT29BF IC= 30mA; IB= 0 TYP. MAX V 80 BDT29CF 100 BDT29DF 120 UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.125A 0.7 V VBE(on) Base-Emitter On Voltage IC= 1A ; VCE= 4V 1.3 V ICES Collector Cutoff Current VCE= VCEOmax; VBE= 0 0.2 mA 0.1 mA 0.2 mA ICEO Collector Cutoff Current B BDT29F/AF VCE= 30V; IB= 0 BDT29BF/CF VCE= 60V; IB= 0 BDT29DF VCE= 90V; IB= 0 B B B IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.2A ; VCE= 4V 40 hFE-2 DC Current Gain IC= 1A ; VCE= 4V 15 Current-Gain—Bandwidth Product IC= 0.2A ; VCE= 10V 3 fT 75 MHz Switching Times ton Turn-On Time 0.3 μs 1.0 μs IC= 1.0A; IB1= -IB2= 0.1A toff Turn-Off Time isc Website：www.iscsemi.cn