SEME BFC60 LAB N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS TO220–AC Package Outline. Dimensions in mm (inches) 10.67 (0.420) 9.65 (0.380) 4.83 (0.190) 3.56 (0.140) 5.33 (0.210) 4.83 (0.190) 2 1.40 (0.020) 0.51 (0.055) 16.51 (0.650) 14.22 (0.560) 6.86 (0.270) 5.84 (0.230) 3.05 (0.120) 2.54 (1.000) 3.73 (0.147) 3.53 (0.139) Dia. VDSS ID(cont) RDS(on) 14.73 (0.580) 12.70 (0.500) 6.35 (0.250) 4.60 (0.181) 1 2 3 1.78 (0.070) 0.99 (0.390) 1.02 (0.040) 0.38 (0.015) 2.54 (0.100) N o m. 0.66 (0.026) 0.41 (0.016) 1500V 0.1A Ω 140Ω 2.92 (0.115) 2.03 (0.080) 5.08 (0.200) N o m. Pin 1 – Gate Pin 2 – Drain Pin 3 – Source ABSOLUTE MAXIMUM RATINGS (TAMB = 25°C unless otherwise stated) 1500 V Continuous Drain Current 0.1 A IDM Pulsed Drain Current 0.2 A VGS Gate – Source Voltage ±20 V PD Total Power Dissipation 20 W TJ , TSTG Operating and Storage Junction Temperature Range –55 to +150 °C VDSS Drain – Source Voltage ID ELECTRICAL CHARACTERISTICS (TAMB = 25°C unless otherwise stated) BVDSS Characteristic Drain – Source Breakdown Voltage Test Conditions VGS = 0V , ID = 1mA RDS(ON) Drain – Source On State Resistance VGS =10V , ID = 50mA IDSS Zero Gate Voltage Drain Current IGSS Typ. Max. Unit V 140 200 Ω VDS = 1200V , VGS = 0V 100 µA Gate – Source Leakage Current VGS = ±20V , VDS = 0V ±100 nA VGS(off) Cutoff Voltage VDS = 10V , ID = 1.0mA 3.5 V Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance ton Turn–on Time VGS = 10V 40 toff Turn-off Time ID = 50mA 400 VSD Diode Forward Voltage VGS = 0 , IS = 0.1A 1.0 |YFS| Forward Transfer Admittance VDS = 20V , ID = 50mA Semelab plc. Min. 1500 1.5 40 VDS = 20V 12 f = 1MHz Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. pF 3.0 50 100 ns 1.5 V mS Prelim. 2/96