Order this document by MPQ7091/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon 14 13 12 11 10 9 8 6 7 COMPLEMENTARY *Motorola Preferred Device 1 2 3 4 5 TYPE B MAXIMUM RATINGS Rating Symbol MPQ7091 MPQ7093 Unit Collector – Emitter Voltage VCEO –150 –250 Vdc Collector – Base Voltage VCBO –150 –250 Vdc Emitter – Base Voltage VEBO –5.0 Vdc IC –500 mAdc Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C PD Total Device Dissipation @ TC = 25°C Derate above 25°C PD Operating and Storage Junction Temperature Range Each Die Four Die Equal Power 750 5.98 1700 13.6 mW mW/°C 1.25 10 3.2 25.6 Watts mW/°C TJ, Tstg –55 to +150 14 1 CASE 646–06, STYLE 1 TO–116 °C THERMAL CHARACTERISTICS Characteristic Junction to Case Junction to Ambient Unit Thermal Resistance Each Die Effective, 4 Die 100 39 167 73.5 °C/W °C/W Coupling Factors Q1–Q4 or Q2–Q3 Q1–Q2 or Q3–Q4 46 5.0 56 10 % % ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max –150 –250 — — — — –150 –250 — — — — –5.0 — — — — — — –250 –250 — — –100 Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) V(BR)CEO MPQ7091 MPQ7093 V(BR)CBO MPQ7091 MPQ7093 Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector Cutoff Current (VCB = –120 Vdc, IE = 0) Vdc Vdc V(BR)EBO Vdc ICBO MPQ7091 MPQ7093 Emitter Cutoff Current (VEB = –3.0 Vdc, IC = 0) nAdc IEBO nAdc Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1997 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Characteristic Min Max Max 25 35 25 40 55 50 — — — — –0.3 –0.5 — –0.7 –0.9 50 70 — — 3.0 5.0 — 60 75 Unit ON CHARACTERISTICS DC Current Gain (IC = –1.0 mAdc, VCE = –10 Vdc) (IC = –10 mAdc, VCE = –10 Vdc) (IC = –30 mAdc, VCE = –10 Vdc) hFE — Collector – Emitter Saturation Voltage (IC = –20 mAdc, IB = –2.0 mAdc) VCE(sat) Base – Emitter Saturation Voltage (IC = –20 mAdc, IB = –2.0 mAdc) VBE(sat) Vdc Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz) fT Output Capacitance (VCB = –20 Vdc, IE = 0, f =1.0 MHz) Cobo Input Capacitance (VEB = –3.0 Vdc, IC = 0, f = 1.0 MHz) Cibo MHz pF pF DC CHARACTERISTICS –1.4 200 VCE = –10 V TJ = 125°C TJ = 25°C 25°C 100 V, VOLTAGE (VOLTS) h FE, DC CURRENT GAIN –1.2 –55°C 70 50 30 20 –1.0 –1.0 –0.8 VBE(sat) @ IC/IB = 10 –0.6 VBE(on) @ VCE = –10 V –0.4 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 0 –1.0 –50 –70 –100 5.0 VCE(sat) @ IC/IB = 10 –0.2 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain Figure 2. “ON” Voltages –50 –70 –100 q V , TEMPERATURE COEFFICIENT (mV/° C) 2.5 IC/IB = 10 2.0 1.5 25°C TO 125°C 1.0 0.5 qVC FOR VCE(sat) –55°C TO 25°C 0 –0.5 –1.0 –1.5 –55°C TO 125°C qVB FOR VBE –2.0 –2.5 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 IC, COLLECTOR CURRENT (mA) Figure 3. Temperature Coefficients 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data PACKAGE DIMENSIONS 14 8 1 7 NOTES: 1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE POSITION AT SEATING PLANE AT MAXIMUM MATERIAL CONDITION. 2. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 3. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 4. ROUNDED CORNERS OPTIONAL. B A F L C J N H G D SEATING PLANE K M STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. COLLECTOR BASE EMITTER NO CONNECTION EMITTER BASE COLLECTOR COLLECTOR BASE EMITTER NO CONNECTION EMITTER BASE COLLECTOR DIM A B C D F G H J K L M N INCHES MIN MAX 0.715 0.770 0.240 0.260 0.145 0.185 0.015 0.021 0.040 0.070 0.100 BSC 0.052 0.095 0.008 0.015 0.115 0.135 0.300 BSC 0_ 10_ 0.015 0.039 MILLIMETERS MIN MAX 18.16 19.56 6.10 6.60 3.69 4.69 0.38 0.53 1.02 1.78 2.54 BSC 1.32 2.41 0.20 0.38 2.92 3.43 7.62 BSC 0_ 10_ 0.39 1.01 CASE 646–06 TO–116 ISSUE M Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 Motorola reserves the right to make changes without further notice to any products herein. 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