ETC 2N6284/D

ON Semiconductor
NPN
Darlington Complementary
Silicon Power Transistors
2N6283
. . . designed for general–purpose amplifier and low–frequency
switching applications.
2N6286
2N6284
PNP
• High DC Current Gain @ IC = 10 Adc –
•
•
2N6287
hFE = 2400 (Typ) – 2N6284
= 4000 (Typ) – 2N6287
Collector–Emitter Sustaining Voltage –
VCEO(sus) = 100 Vdc (Min)
Monolithic Construction with Built–In Base–Emitter Shunt
Resistors
DARLINGTON
20 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
100 VOLTS
160 WATTS
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*MAXIMUM RATINGS
Symbo
l
2N6283
2N6286
2N6284
2N6287
Unit
VCEO
80
100
Vdc
Collector–Base Voltage
VCB
80
100
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current – Continuous
Peak
IC
20
40
Adc
Base Current
IB
0.5
Adc
Total Device Dissipation @ TC =
25C
Derate above 25C
PD
160
0.915
Watts
W/C
Operating and Storage Junction
Temperature Range
TJ,Tstg
–65 to +200
C
Rating
Collector–Emitter Voltage
CASE 1–07
TO–204AA
(TO–3)
*THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
RθJC
1.09
C/W
*Indicates JEDEC Registered Data.
PD, POWER DISSIPATION (WATTS)
160
140
120
100
80
60
40
20
0
0
25
50
100
125
75
150
TC, CASE TEMPERATURE (°C)
175
200
Figure 1. Power Derating
 Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 1
1
Publication Order Number:
2N6284/D
2N6283 2N6284 2N6286 2N6287
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*ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
80
100
–
–
–
–
1.0
1.0
–
–
0.5
5.0
–
2.0
750
100
18,000
–
–
–
2.0
3.0
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 0.1 Adc, IB = 0)
VCEO(sus)
2N6283, 2N6286
2N6284, 2N6287
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)
ICEO
Collector Cutoff Current
(VCE = Rated VCB, VBE(off) = 1.5 Vdc)
(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150C)
ICEX
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
Vdc
mAdc
mAdc
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 10 Adc, VCE = 3.0 Vdc)
(IC = 20 Adc, VCE = 3.0 Vdc)
hFE
–
Collector–Emitter Saturation Voltage
(IC = 10 Adc, IB = 40 mAdc)
(IC = 20 Adc, IB = 200 mAdc)
VCE(sat)
Vdc
Base–Emitter On Voltage
(IC = 10 Adc, VCE = 3.0 Vdc)
VBE(on)
–
2.8
Vdc
Base–Emitter Saturation Voltage
(IC = 20 Adc, IB = 200 mAdc)
VBE(sat)
–
4.0
Vdc
|hfe|
4.0
–
MHz
–
–
400
600
300
–
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small–Signal Short–Circuit
Forward Current Transfer Ratio
(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
2N6283, 2N6284
2N6286, 2N6287
Small–Signal Current Gain
(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
hfe
*Indicates JEDEC Registered Data.
(1) Pulse test: Pulse Width = 300 µs, Duty Cycle = 2%
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2
pF
–
2N6283 2N6284 2N6286 2N6287
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
RB
V2
RC
TUT
APPROX
+ 8.0 V
0
51
V1
APPROX
25 µs
- 12 V
tr, tf 10 ns
DUTY CYCLE = 1.0%
D1
8.0 k
ts
50
+ 4.0 V
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES
2.0
r(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
D = 0.5
0.3
0.2
0.2
0.1
0.07
0.05
0.01
0.01
P(pk)
RθJC(t) = r(t) RθJC
RθJC = 1.09°C/W MAX
0.02
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)
0.01
SINGLE PULSE
0.05
0.1
0.2 0.3
0.5
20
Figure 3. Switching Times
0.05
0.02 0.03
tr
0.3 VCC = 30 Vdc
I /I = 250
0.2 C B
IB1 = IB2
td @ VBE(off) = 0 V
TJ = 25°C
0.1
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.2 0.3
IC, COLLECTOR CURRENT (AMP)
0.1
0.03
0.02
tf
1.0
0.7
0.5
Figure 2. Switching Times Test Circuit
1.0
0.7
0.5
2N6284 (NPN)
2N6287 (PNP)
3.0
SCOPE
t, TIME (s)
µ
D1 MUST BE FAST RECOVERY TYPE e.g.,
1N5825 USED ABOVE IB 100 mA
MSD6100 USED BELOW IB 100 mA
10
7.0
5.0
VCC
- 30 V
1.0
2.0 3.0 5.0
10
t, TIME OR PULSE WIDTH (ms)
Figure 4. Thermal Response
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3
20
30
50
t1
t2
DUTY CYCLE, D = t1/t2
100
200 300
500
1000
2N6283 2N6284 2N6286 2N6287
ACTIVE–REGION SAFE OPERATING AREA
IC, COLLECTOR CURRENT (AMP)
50
20
0.5 ms
10
1.0 ms
5.0
5.0 ms
2.0
1.0
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e. the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 200C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk) <
200C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
0.1 ms
dc
TJ = 200°C
0.5
0.2
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25°C
SINGLE PULSE
0.1
0.05
2.0
5.0
10
20
50
100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. 2N6284, 2N6287
1000
TJ = 25°C
VCE = 3.0 Vdc
IC = 10 A
5000
2000
1000
500
200
100
500
300
10
2.0
5.0 10
20
50 100
f, FREQUENCY (kHz)
Cob
2N6284 (NPN)
2N6287 (PNP)
2N6284 (NPN)
2N6287 (PNP)
1.0
Cib
200
50
20
TJ = 25°C
700
C, CAPACITANCE (PF)
hFE, SMALL-SIGNAL CURRENT GAIN
10,000
200
100
0.1 0.2
500 1000
Figure 6. Small–Signal Current Gain
0.5
1.0 2.0
5.0
10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
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4
50
100
2N6283 2N6284 2N6286 2N6287
NPN
2N6284
hFE, DC CURRENT GAIN
10,000
7000
5000
VCE = 3.0 V
30,000
20,000
TJ = 150°C
10,000
3000
2000
1000
700
hFE, DC CURRENT GAIN
20,000
PNP
2N6287
25°C
-55°C
500
300
200
5.0 7.0 10
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
0.2 0.3
VCE = 3.0 V
TJ = 150°C
7000
5000
25°C
3000
2000
-55°C
1000
700
500
300
0.2 0.3
20
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
20
3.0
VCE , COLLECTOREMITTER VOLTAGE (VOLTS)
VCE , COLLECTOREMITTER VOLTAGE (VOLTS)
Figure 8. DC Current Gain
TJ = 25°C
2.6
IC = 5.0 A
10 A
15 A
2.2
1.8
1.4
1.0
0.5 0.7 1.0
20
2.0 3.0
5.0 7.0 10
IB, BASE CURRENT (mA)
30
50
3.0
TJ = 25°C
2.6
IC = 5.0 A
15 A
10 A
2.2
1.8
1.4
1.0
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IB, BASE CURRENT (mA)
20
30
50
Figure 9. Collector Saturation Region
3.0
3.0
TJ = 25°C
2.5
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
TJ = 25°C
2.0
1.5
1.0
VBE(sat) @ IC/IB = 250
VBE @ VCE = 3.0 V
2.5
2.0
1.5
VBE(sat) @ IC/IB = 250
1.0
VBE @ VCE = 3.0 V
VCE(sat) @ IC/IB = 250
0.5
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
VCE(sat) @ IC/IB = 250
0.5
20
0.2 0.3
IC, COLLECTOR CURRENT (AMP)
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
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5
20
2N6283 2N6284 2N6286 2N6287
PNP
2N6287
+5.0
+4.0
+3.0
*APPLIES FOR IC/IB ≤
[email protected] 3.0V
250
+2.0
25°C to 150°C
+1.0
-55°C to + 25°C
0
-1.0
-2.0
-3.0
-4.0
-5.0
θV, TEMPERATURE COEFFICIENTS (mV/°C)
θV, TEMPERATURE COEFFICIENTS (mV/°C)
NPN
2N6284
*θVC for VCE(sat)
25°C to + 150°C
θVB for VBE
0.2 0.3
-55°C to + 25°C
0.5
0.7 1.0
2.0 3.0
5.0 7.0 10
20
+5.0
+4.0
*APPLIES FOR IC/IB ≤
+3.0
[email protected] 3.0V
250
+2.0
25°C to 150°C
+1.0
-55°C to + 25°C
0
-1.0
*θVC for VCE(sat)
-2.0
-3.0
25°C to + 150°C
θVB for VBE
-4.0
-5.0
-55°C to + 25°C
0.2 0.3
0.5
IC, COLLECTOR CURRENT (AMP)
0.7 1.0
2.0
3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (AMP)
Figure 11. Temperature Coefficients
104
103
103
VCE = 30 V
TJ = 150°C
102
101
IC, COLLECTOR CURRENT (A)
µ
IC, COLLECTOR CURRENT (A)
µ
105
100°C
REVERSE
FORWARD
100
102
VCE = 30 V
TJ = 150°C
101
100°C
100
10-1
REVERSE
10-2
FORWARD
25°C
25°C
10-1
-0.6 -0.4
-0.2
0
+0.2 +0.4
+0.6 +0.8
+1.0
10-3
+0.6 +0.4
+1.2 + 1.4
VBE, BASE-EMITTER VOLTAGE (VOLTS)
+0.2
0
-0.2
-0.4
-0.6 -0.8
-1.0
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut–Off Region
COLLECTOR
NPN
2N6284
COLLECTOR
PNP
2N6287
BASE
BASE
8.0 k
60
8.0 k
EMITTER
60
EMITTER
Figure 13. Darlington Schematic
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6
-1.2 -1.4
2N6283 2N6284 2N6286 2N6287
PACKAGE DIMENSIONS
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
A
N
C
–T–
E
D
SEATING
PLANE
K
2 PL
0.13 (0.005)
U
T Q
M
M
Y
M
–Y–
L
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
2
H
G
B
M
T Y
1
–Q–
0.13 (0.005)
M
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
INCHES
MIN
MAX
1.550 REF
--1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
--0.830
0.151
0.165
1.187 BSC
0.131
0.188
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
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7
MILLIMETERS
MIN
MAX
39.37 REF
--26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
--21.08
3.84
4.19
30.15 BSC
3.33
4.77
2N6283 2N6284 2N6286 2N6287
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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